Clairex CLT131 Npn silicon phototransistor Datasheet

®
CLT130,CLT131,CLT132,CLT133
NPN Silicon Phototransistors
0.210 (5.33)
0.190 (4.83)

Technologies, Inc.
CLT130, CLT131, CLT132 and CLT133 are
exact replacements for obsolete part numbers
CLT2130, CLT2140, CLT2150 and CLT2160.
0.190 (4.83)
0.176 (4.47)
Clairex
July, 2001
0.500 (12.7) min
0.215 (5.46)
0.205 (5.21)
COLLECTOR
0.158 (4.01)
0.136 (3.45)
BASE
EMITTER
0.100 (2.54) dia
0.025 (0.64)
max
0.060 (1.52)
max
0.147 (3.73)
0.137 (3.48)
0.019 (0.48)
0.016 (0.41)
ALL DIMENSIONS ARE IN INCHES (MILLIMETERS)
Case 17
features
absolute maximum ratings (TA = 25°C unless otherwise stated)
storage temperature .........................................................................-65°C to +150°C
• high sensitivity
operating temperature .....................................................................-65°C to +125°C
• ± 9° acceptance angle
lead soldering temperature(1) ...........................................................................260°C
• custom aspheric lensed TO-18
collector-emitter voltage...................................................................................... 30V
package
continuous collector current ............................................................................. 50mA
• transistor base is bonded
continuous power dissipation(2) ......................................................................250mW
• usable throughout visible and near
infrared spectrum
notes:
• RoHS compliant
1. 0.06” (1.5mm) from the header for 5 seconds maximum
2. Derate linearly 2.0mW/°C from 25°C free air temperature to TA = +125°C.
description
The CLT130-CLT133 series are NPN
silicon phototransistors mounted in
TO-18 packages which feature
custom double convex glass-to-metal
sealed aspheric lenses. Narrow
acceptance angle enables excellent
on-axis coupling. These devices are
mechanically and spectrally matched
to the CLE130-CLE133 series of
IREDs. For additional information,
call Clairex.
electrical characteristics (TA = 25°C unless otherwise noted)
symbol
parameter
Light current(3)
IL
ICEO
CLT130
CLT131
CLT132
CLT133
Collector dark current
V(BR)CEO
Collector-emitter breakdown
min
typ
max
units
0.60
1.2
2.4
4.0
-
-
25
mA
mA
mA
mA
nA
30
-
-
V
IC=100µA
IC =1mA, VCE=5V, RL=1kΩ.
tr, tf
Output rise and fall time
-
5.0
-
µs
θHP
Total angle at half sensitivity points
-
18
-
deg.
test conditions
VCE=5V, Ee=1.5mW/cm2
VCE=5V, Ee=1.5mW/cm2
VCE=5V, Ee=1.5mW/cm2
VCE=5V, Ee=1.5mW/cm2
VCE=10V, Ee=0
note: 3. Radiation source for all light current testing is a 940nm IRED.
Clairex reserves the right to make changes at any time to improve design and to provide the best possible product.
Clairex Technologies, Inc.
Phone: 972-265-4900
1301 East Plano Parkway
Fax: 972-265-4949
Revised 3/22/06
Plano, Texas 75074-8524
www.clairex.com
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