Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR General Description Features The APT13003D is a high voltage, high speed, high efficiency switching transistor, and it is specially designed for off-line switch mode power supplies with low output power. · · · · The APT13003D is available in TO-92 (bulk or ammo packing), TO-126 and TO-251 packages. Applications · · APT13003D High Switching Speed High Collector-Emitter Voltage: 700V Low Cost High Efficiency Battery Chargers for Mobile Phone of BCD Solution Power Supply for DVD/STB of BCD Solution TO-92(Ammo Packing) TO-92(Bulk Packing) TO-126 TO-251 Figure 1. Package Types of APT13003D Jul. 2012 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 1 Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003D Pin Configuration U Package I Package (TO-126) (TO-251) 3 Emitter Collector 2 Collector Base 1 3 Emitter 2 1 Base (Front View) (Front View) Z Package (TO-92 (Bulk Packing)) (TO-92 (Ammo Packing)) 3 Base 3 Base 2 Collector 2 Collector 1 Emitter 1 Emitter (Top View) (Top View) Figure 2. Pin Configuration of APT13003D Internal Structure Collector Base Emitter Figure 3. Internal Structure of APT13003D Jul. 2012 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 2 Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003D Ordering Information APT13003D - Circuit Type G1: Green Package U: TO-126 Z: TO-92 I: TO-251 Package TO-126 TO-92 TO-251 Blank: Tube or Bulk TR: Ammo Part Number Marking ID Packing Type APT13003DU-G1 GU13003D Bulk APT13003DZ-G1 13003DZ-G1 Bulk APT13003DZTR-G1 13003DZ-G1 Ammo APT13003DI-G1 APT13003DI-G1 Tube BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant and green. Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit VCES 700 V VCEO(sus) 450 V VEBO 9 V IC 1.5 A ICM 3.0 A IB 0.75 A IBM 1.5 A Collector-Emitter Voltage (VBE=0) Collector-Emitter Voltage (IB=0) Emitter-Base Breakdown Voltage (IC=0) Collector Current Collector Peak Current Base Current Base Peak Current Power Dissipation (TA=25oC) Power Dissipation (TC=25oC) For TO-92 1.1 PTOT For TO-251 For TO-126 24 W 20 Operating Junction Temperature Storage Temperature Range TJ 150 oC TSTG -55 to 150 oC Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Jul. 2012 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 3 Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003D Thermal Characteristics Parameter Symbol Value For TO-126 Maximum Thermal Resistance （Junction to Case） 6.25 θJC For TO-251 Maximum Thermal Resistance （Junction to Ambient） Unit For TO-92 83.3 For TO-126 96 θJA For TO-251 oC/W 5.0 oC/W 110 For TO-92 113.6 Electrical Characteristics ( TC=25oC, unless otherwise specified.) Parameter Collector Cut-off Current (VBE=-1.5V) Symbol Condition ICEV VCE=700V Collector-Emitter Sustaining (IB=0) VCEO (sus) IC=100µA Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage VBE(sat) DC Current Gain (Note 2) hFE Turn-on Time with Resistive Load ton Storage Time with Resistive Load ts Fall Time with Resistive Load tf Output Capacitance Current Gain Bandwidth Product COB fT Min Typ Max Unit 10 µA 450 V IC= 0.5A, IB=0.1A 0.3 IC=1.0A, IB=0.25A 0.4 IC=0.5A, IB=0.1A 1.0 IC=1.0A, IB=0.25A 1.2 IC=0.5A, VCE=2.0V 16 30 IC=1.0A, VCE=2.0V 5.0 25 IC=1.0A, VCC=125V IB1=0.2A, IB2=-0.2A VCB=10V, f=0.1MHz VCE=10V, IC=0.1A 18 4 V V 0.7 µs 3.0 µs 0.35 µs pF MH Note 2: Pulse test for Pulse Width≤ 300µs, Duty Cycle ≤ 2%. Jul. 2012 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 4 Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003D Typical Performance Characteristics 10 10 DC 1 Collector Current IC(A) Collector Current IC(A) DC 1 0.1 0.1 0.01 o TC=25 C 0.01 1 10 100 o TC=25 C 1E-3 1000 1 10 Collector-Emitter Clamp Voltage VCE(V) 1000 Collector-Emitter Clamp Voltage VCE(V) Figure 4. Safe Operating Areas (TO-126 Package) Figure 5. Safe Operating Areas (TO-92 Package) 10 125 100 Power Derating Factor (%) DC Collector Current IC(A) 100 1 0.1 75 50 25 o TC=25 C 0.01 1 10 100 0 1000 Collector-Emitter Clamp Voltage VCE(V) 0 25 50 75 100 125 150 175 200 o Case Temperature ( C) Figure 6. Safe Operating Areas (TO-251 Package) Figure 7. Power Derating Curve Jul. 2012 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 5 Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003D Typical Performance Characteristics (Continued) 1.6 35 IB=200mA IB=180mA IB=160mA IB=140mA 1.2 30 o TJ=125 C IB=120mA DC Current Gain Colltector Current IC (A) 1.4 IB=100mA 1.0 IB=80mA IB=60mA 0.8 IB=40mA 0.6 o TJ=25 C 15 5 0.2 0.0 0.0 20 10 IB=20mA 0.4 VCE=2V 25 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 0.01 4.0 Collector-Emitter Voltage VCE(V) 0.1 1 10 Collector Current IC(A) Figure 8. Static Characterstics Figure 9. DC Current Gain 10 Base-Emitter Voltage VBE(V) Collector-Emitter Voltage VCE(V) 1.20 HFE=5 1 o TJ=125 C o TJ=25 C 0.1 HFE=5 1.05 o TJ=25 C 0.90 o TJ=125 C 0.75 0.60 0.01 0.1 1 0.1 10 1 10 Collector Current IC(A) Collector Current IC(A) Figure 10. Collector-Emitter Saturation Region Figure 11. Base-Emitter Saturation Voltage Jul. 2012 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 6 Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003D Mechanical Dimensions 0.000(0.000) 0.300(0.012) 2.400(0.094) 2.900(0.114) 1.060(0.042) 1.500(0.059) 3.900(0.154) 7.400(0.291) 8.200(0.323) 10.600(0.417) 11.200(0.440) Unit: mm(inch) 3.600(0.142) TO-126 Φ 3.100(0.122) 3.550(0.140) 1.170(0.046) 1.470(0.058) 2.100(0.083) 1.700(0.067) 14.500(0.570) 15.900(0.626) 0.660(0.026) 4.560(0.180) TYP. 0.860(0.034) 2.280(0.090) TYP Jul. 2012 Rev. 1. 2 0.400(0.016) 0.600(0.024) BCD Semiconductor Manufacturing Limited 7 Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003D Mechanical Dimensions (Continued) TO-92 (Bulk Packing) Unit: mm(inch) 1.000(0. 039) 3.430(0.135) MIN 3.700(0.146) 3.300(0.130) 1.400(0.055) 0.320(0. 013) 0.510(0. 020) 0. 000(0. 000) 0. 380(0. 015) Φ1. 600(0. 063) MAX 4.700(0.185) 1.270(0. 050) TYP 15.500(0.610) 0.360(0. 014) 0.760(0. 030) 12.500(0.492) 4.300(0.169) 4.400(0.173) 4.800(0.189) 2.420(0. 095) 2.660(0.105) Jul. 2012 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 8 Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003D Mechanical Dimensions (Continued) TO-92 (Ammo Packing) Unit: mm(inch) 1. 100(0. 043) 3. 430(0.135) MIN 1.270(0.050) Typ 2.500(0.098) 4.000 (0.157 ) 0. 000(0.000) 0. 380(0.015) Φ1. 600(0. 063) MAX 14.500(0.571) 12.500(0.492) 0.320(0. 013) 0. 510(0. 020) 3.800(0.150) 3.300(0.130) 1. 400(0.055) 4.700(0.185) 4.300(0.169) 4.400(0.173) 4.800 (0.189 ) 13.000(0. 512) 15.000 (0.591 ) 0.380(0.015) 0.550(0.022 ) 2.540(0.100) Typ Jul. 2012 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 9 Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003D Mechanical Dimensions (Continued) Unit: mm(inch) 6.450(0.254) 6.750(0.266) 2. 200（0. 087） 2. 400（0. 094） 5. 200(0. 205) 5. 400( 0. 213) 0. 450(0. 018) 0. 550( 0. 022) 9.000(0.354) 9.400(0.370) 5.950 (0.234) 6.250 (0.246) 0.950(0.037) 1.250(0.049) TO-251 0. 640 (0.025 ) 0. 740 (0.029 ) 4.430 (0. 174) 4.730 ( 0. 186 ) 0. 450(0. 018) 0. 550(0. 022) 2. 240(0. 088 ) 2. 340(0.092) 0.950(0.037) 1.150(0.045) Jul. 2012 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 10 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor BCD Semiconductor Manufacturing Manufacturing Limited Limited reserves reserves the the right right to to make make changes changes without without further further notice notice to to any any products products or or specifispecifications herein. cations herein. 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