A Product Line of Diodes Incorporated DMP3025LK3 30V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary V(BR)DSS Features and Benefits ID RDS(on) TA = 25°C 25mΩ @ VGS= -10V -16.1A 41mΩ @ VGS= -4.5V -12.5A • Low on-resistance • Fast switching speed • “Green” component and RoHS compliant (Note 1) -30V Mechanical Data • Case: TO252-3L Description and Applications • This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 (Note 1) • Moisture Sensitivity: Level 1 per J-STD-020D • Terminals Connections: See Diagram • Terminals: Matte Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 • Backlighting • Marking Information: See Below • DC-DC Converters • • Ordering Information: See Below Power management functions • Weight: 0.33 grams (approximate) D D G S D G Top View Ordering Information Product DMP3025LK3-13 Note: S Pin Out -Top View Equivalent Circuit (Note 1) Marking P3025L Reel size (inches) 13 Tape width (mm) 16 Quantity per reel 2,500 1. Diodes, Inc. defines “Green” products as those which are Eu RoHS compliant and contain no halogens or antimony compounds; further information about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website. Marking Information YYWW P3025L DMP3025LK3 Document Revision: 1 = Manufacturer’s Marking P3025L = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01-52) 1 of 8 www.diodes.com July 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMP3025LK3 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGS Drain-Source voltage Gate-Source voltage Continuous Drain current VGS = 10V Pulsed Drain current VGS= 10V Continuous Source current (Body diode) Pulsed Source current (Body diode) (Note 3) TA=70°C (Note 3) (Note 2) (Note 4) (Note 3) (Note 4) ID IDM IS ISM Value -30 ±20 -16.1 -12.9 -10.6 -41.9 -12.6 -41.9 Unit V V Value 4.3 34.5 10.0 80.0 2.15 17.2 29.0 12.5 58.0 1.02 -55 to 150 Unit A A A A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol (Note 2) Power dissipation Linear derating factor (Note 3) PD (Note 5) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and storage temperature range Notes: (Note 2) (Note 3) (Note 5) (Note 6) RθJA RθJL TJ, TSTG W mW/°C °C/W °C 2. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 3. Same as note 2, except the device is measured at t ≤ 10 sec. 4. Same as note 2, except the device is pulsed with D = 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature. 5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 6. Thermal resistance from junction to solder-point (at the end of the drain lead). DMP3025LK3 Document Revision: 1 2 of 8 www.diodes.com July 2009 © Diodes Incorporated A Product Line of Diodes Incorporated + DMP3025LK3 Thermal Characteristics RDS(on) 1 DC -ID Drain Current (A) -ID Drain Current (A) RDS(on) 10 Limit 1s 100ms 100m 1ms 25mm x 25mm 1oz FR4 10m 100m DC 1 1s 100ms 10ms 100m 10ms T amb=25°C 10 Limit 100µs 1 10 50mm x 50mm 2oz FR4 10m 0.1 10 -VDS Drain-Source Voltage (V) Safe Operating Area Safe Operating Area 30 T amb=25°C 50 25mm x 25mm 1oz FR4 40 D=0.5 30 D=0.1 D=0.2 D=0.05 10 Single Pulse 0 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Thermal Resistance (°C/W) 60 Thermal Resistance (°C/W) 100µs 1 -VDS Drain-Source Voltage (V) 20 1ms T amb=25°C Transient Thermal Impedance T amb=25°C 25 50mm x 50mm 2oz FR4 20 D=0.5 15 10 D=0.1 D=0.2 D=0.05 5 Single Pulse 0 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance 100 50mm x 50mm 2oz FR4 10 25mm x 25mm 1oz FR4 1 100µ 1m 10m 100m 1 10 100 Pulse Width (s) 1k Max Power Dissipation (W) Max Power Dissipation (W) 4.5 Single Pulse T amb=25°C 4.0 50mm x 50mm 2oz FR4 3.5 3.0 25mm x 25mm 1oz FR4 2.5 2.0 1.5 1.0 0.5 0.0 0 Pulse Power Dissipation DMP3025LK3 Document Revision: 1 20 40 60 80 100 120 140 160 Temperature (°C) Derating Curve 3 of 8 www.diodes.com July 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMP3025LK3 Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS -30 ⎯ ⎯ V ID = -250μA, VGS= 0V Zero Gate Voltage Drain Current IDSS ⎯ ⎯ -0.5 μA VDS= -30V, VGS= 0V Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS= ±20V, VDS= 0V VGS(th) -1.0 ⎯ -3.0 V ID= -250μA, VDS= VGS ON CHARACTERISTICS Gate Threshold Voltage 0.025 VGS= -10V, ID= -7.1A RDS (ON) ⎯ ⎯ Forward Transconductance (Notes 7 & 8) gfs ⎯ 18.6 ⎯ S VDS= -15V, ID= -7.1A Diode Forward Voltage (Note 7) VSD ⎯ -0.80 -1.2 V IS= -1.7A, VGS= 0V Reverse recovery time (Note 8) trr 16.2 ⎯ ns Reverse recovery charge (Note 8) Qrr ⎯ 10 ⎯ nC Input Capacitance Ciss ⎯ 1678 ⎯ pF Output Capacitance Coss ⎯ 303 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 178 ⎯ pF Total Gate Charge Qg ⎯ 16.5 ⎯ nC Total Gate Charge Qg ⎯ 31.6 ⎯ nC Gate-Source Charge Qgs ⎯ 4.3 ⎯ nC Gate-Drain Charge Qgd ⎯ 6.2 ⎯ nC Turn-On Delay Time (Note 9) tD(on) ⎯ 3.5 ⎯ ns Turn-On Rise Time (Note 9) tr ⎯ 4.9 ⎯ ns Turn-Off Delay Time (Note 9) tD(off) ⎯ 44 ⎯ ns tf ⎯ 23 ⎯ ns Static Drain-Source On-Resistance (Note 7) 0.041 Ω VGS= -4.5V, ID= -5.5A IS= -2.2A, di/dt= 100A/μs DYNAMIC CHARACTERISTICS (Note 8) Turn-Off Fall Time (Note 9) Notes: VDS= -15V, VGS= 0V f= 1MHz VGS= -4.5V VGS= -10V VDS= -15V, ID= -7.1A VDD= -15V, VGS= -10V ID= -1A, RG ≅ 6.0Ω 7. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2% 8. For design aid only, not subject to production testing. 9. Switching characteristics are independent of operating junction temperatures. DMP3025LK3 Document Revision: 1 4 of 8 www.diodes.com July 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMP3025LK3 Typical Characteristics T = 150°C 3.5V 4.5V -ID Drain Current (A) -ID Drain Current (A) 10V 3V 10 2.5V 1 VGS T = 25°C 10V 3.5V 3V 10 2.5V 1 2V 0.1 VGS 0.1 0.01 0.1 1 10 0.1 -VDS Drain-Source Voltage (V) 1 10 -VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics T = 150°C 1 T = 25°C 0.1 2 3 -VGS Gate-Source Voltage (V) RDS(on) Drain-Source On-Resistance (Ω) Typical Transfer Characteristics DMP3025LK3 Document Revision: 1 10 T = 25°C VGS 2.5V 3V 1 3.5V 0.1 4V 10V 0.01 0.1 1 10 -ID Drain Current (A) On-Resistance v Drain Current VGS = 10V ID = 7.1A 1.4 RDS(on) 1.2 1.0 0.8 VGS = VDS 0.6 0.4 -50 VGS(th) ID = 250uA 0 50 100 Tj Junction Temperature (°C) 150 Normalised Curves v Temperature -ISD Reverse Drain Current (A) -ID Drain Current (A) VDS = 10V Normalised RDS(on) and VGS(th) 1.6 10 10 1 T = 150°C T = 25°C 0.1 0.01 Vgs = 0V 1E-3 0.2 0.4 0.6 0.8 1.0 -VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage 5 of 8 www.diodes.com July 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMP3025LK3 Typical Characteristics - continued -VGS Gate-Source Voltage (V) 2500 C Capacitance (pF) VGS = 0V f = 1MHz 2000 CISS 1500 COSS 1000 CRSS 500 0 1 10 -VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage 10 9 8 7 6 5 4 3 2 1 0 ID = 7.1A VDS = 15V 0 5 10 15 20 Q - Charge (nC) 25 30 35 Gate-Source Voltage v Gate Charge Test Circuits Current regulator QG 12V VG QGS 50k 0.2F Same as D.U.T QGD VDS IG D.U.T ID VGS Charge Gate charge test circuit Basic gate charge waveform VDS 90% RD VGS VDS RG VDD 10% VGS tr td(off) t(on) tr t(on) Switching time waveforms DMP3025LK3 Document Revision: 1 Pulse width ⬍ 1S Duty factor 0.1% td(on) 6 of 8 www.diodes.com Switching time test circuit July 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMP3025LK3 Package Outline Dimensions DIM Inches Millimeters Min Max Min DIM Max Inches Min Millimeters Max Min A 0.086 0.094 2.18 2.39 e A1 - 0.005 - 0.127 H 0.370 0.410 9.40 10.41 b 0.020 0.035 0.508 0.89 L 0.055 0.070 1.40 1.78 b2 0.030 0.045 0.762 1.14 L1 0.108 REF 2.74 REF b3 0.205 0.215 5.21 5.46 L2 0.020 BSC 0.508 BSC c 0.018 0.024 0.457 0.61 L3 0.035 0.065 0.89 1.65 c2 0.018 0.023 0.457 0.584 L4 0.025 0.040 0.635 1.016 D 0.213 0.245 5.41 6.22 L5 0.045 0.060 1.14 1.52 D1 0.205 - 5.21 - θ1° 0° 10° 0° 10° E 0.250 0.265 6.35 6.73 θ° 0° 15° 0° 15° E1 0.170 - 4.32 - - - - - - DMP3025LK3 Document Revision: 1 7 of 8 www.diodes.com 0.090 BSC Max 2.29 BSC July 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMP3025LK3 Suggested Pad Layout 6.2 0.244 3.0 0.118 5.8 0.228 1.6 0.063 2.58 0.101 6.17 0.243 mm inches IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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