CY15B256Q
256-Kbit (32K × 8) Automotive Serial (SPI)
F-RAM
256-Kbit (32K × 8) Automotive Serial (SPI) F-RAM
Features
Functional Description
■
256-Kbit ferroelectric random access memory (F-RAM)
logically organized as 32K × 8
14
❐ High-endurance 100 trillion (10 ) read/writes
❐ 151-year data retention (See the Data Retention and
Endurance table)
❐ NoDelay™ writes
❐ Advanced high-reliability ferroelectric process
The CY15B256Q is a 256-Kbit nonvolatile memory employing an
advanced ferroelectric process. An F-RAM is nonvolatile and
performs reads and writes similar to a RAM. It provides reliable
data retention for 151 years while eliminating the complexities,
overhead, and system-level reliability problems caused by serial
flash, EEPROM, and other nonvolatile memories.
■
Very fast serial peripheral interface (SPI)
❐ Up to 40-MHz frequency
❐ Direct hardware replacement for serial flash and EEPROM
❐ Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
■
Sophisticated write-protection scheme
❐ Hardware protection using the Write Protect (WP) pin
❐ Software protection using Write Disable instruction
❐ Software block protection for 1/4, 1/2, or entire array
■
Device ID
❐ Manufacturer ID and Product ID
■
Low power consumption
❐ 2.5-mA active current at 40 MHz
❐ 150-A standby current
❐ 8-A sleep mode current
■
Low-voltage operation: VDD = 2.0 V to 3.6 V
■
Automotive-A temperature: –40 C to +85 C
■
8-pin small outline integrated circuit (SOIC) package
■
Restriction of hazardous substances (RoHS) compliant
Unlike serial flash and EEPROM, the CY15B256Q performs
write operations at bus speed. No write delays are incurred. Data
is written to the memory array immediately after each byte is
successfully transferred to the device. The next bus cycle can
commence without the need for data polling. In addition, the
product offers substantial write endurance compared with other
nonvolatile memories. The CY15B256Q is capable of supporting
1014 read/write cycles, or 100 million times more write cycles
than EEPROM.
These capabilities make the CY15B256Q ideal for nonvolatile
memory applications requiring frequent or rapid writes.
Examples range from data logging, where the number of write
cycles may be critical, to demanding industrial controls where the
long write time of serial flash or EEPROM can cause data loss.
The CY15B256Q provides substantial benefits to users of serial
EEPROM or flash as a hardware drop-in replacement. The
CY15B256Q uses the high-speed SPI bus, which enhances the
high-speed write capability of F-RAM technology. The device
incorporates a read-only Device ID that allows the host to
determine the manufacturer, product density, and product
revision. The device specifications are guaranteed over an
automotive-a range of –40 C to +85 C.
For a complete list of related documentation, click here.
Logic Block Diagram
WP
Instruction Decoder
Clock Generator
Control Logic
Write Protect
CS
HOLD
SCK
32 K x 8
F-RAM Array
Instruction Register
15
Address Register
Counter
SI
8
Data I/O Register
SO
3
Nonvolatile Status
Register
Cypress Semiconductor Corporation
Document Number: 001-90867 Rev. *E
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised January 13, 2016
CY15B256Q
Contents
Pinout ................................................................................ 3
Pin Definitions .................................................................. 3
Functional Overview ........................................................ 4
Memory Architecture ........................................................ 4
Serial Peripheral Interface - SPI Bus .............................. 4
SPI Overview ............................................................... 4
SPI Modes ................................................................... 5
Power Up to First Access ............................................ 6
Command Structure .................................................... 6
WREN - Set Write Enable Latch ................................. 6
WRDI - Reset Write Enable Latch ............................... 6
Status Register and Write Protection ............................. 7
RDSR - Read Status Register ..................................... 7
WRSR - Write Status Register .................................... 7
Memory Operation ............................................................ 8
Write Operation ........................................................... 8
Read Operation ........................................................... 8
Fast Read Operation ................................................... 8
HOLD Pin Operation ................................................. 10
Sleep Mode ............................................................... 10
Device ID ................................................................... 11
Endurance ................................................................. 12
Document Number: 001-90867 Rev. *E
Maximum Ratings ........................................................... 13
Operating Range ............................................................. 13
DC Electrical Characteristics ........................................ 13
Data Retention and Endurance ..................................... 14
Capacitance .................................................................... 14
Thermal Resistance ........................................................ 14
AC Test Conditions ........................................................ 14
AC Switching Characteristics ....................................... 15
Power Cycle Timing ....................................................... 17
Ordering Information ...................................................... 18
Ordering Code Definitions ......................................... 18
Package Diagram ............................................................ 19
Acronyms ........................................................................ 20
Document Conventions ................................................. 20
Units of Measure ....................................................... 20
Document History Page ................................................. 21
Sales, Solutions, and Legal Information ...................... 22
Worldwide Sales and Design Support ....................... 22
Products .................................................................... 22
PSoC® Solutions ...................................................... 22
Cypress Developer Community ................................. 22
Technical Support ..................................................... 22
Page 2 of 22
CY15B256Q
Pinout
Figure 1. 8-pin SOIC Pinout
CS
1
SO
2
WP
3
VSS
4
Top View
not to scale
8
VDD
7
HOLD
6
SCK
5
SI
Pin Definitions
Pin Name
I/O Type
Description
SCK
Input
Serial Clock. All I/O activity is synchronized to the serial clock. Inputs are latched on the rising edge
and outputs occur on the falling edge. Because the device is synchronous, the clock frequency may
be any value between 0 and 40 MHz and may be interrupted at any time.
CS
Input
Chip Select. This active LOW input activates the device. When HIGH, the device enters the
low-power standby mode, ignores other inputs, and the output is tristated. When LOW, the device
internally activates the SCK signal. A falling edge on CS must occur before every opcode.
SI[1]
Input
Serial Input. All data is input to the device on this pin. The pin is sampled on the rising edge of SCK
and is ignored at other times. It should always be driven to a valid logic level to meet IDD specifications.
SO[1]
Output
Serial Output. This is the data output pin. It is driven during a read and remains tristated at all other
times including when HOLD is LOW. Data transitions are driven on the falling edge of the serial clock.
WP
Input
Write Protect. This active LOW pin prevents write operation to the Status Register when WPEN is
set to ‘1’. This is critical because other write protection features are controlled through the Status
Register. A complete explanation of write protection is provided on Status Register and Write
Protection on page 7. This pin must be tied to VDD if not used.
HOLD
Input
HOLD Pin. The HOLD pin is used when the host CPU must interrupt a memory operation for another
task. When HOLD is LOW, the current operation is suspended. The device ignores any transition
on SCK or CS. All transitions on HOLD must occur while SCK is LOW. This pin has a weak internal
pull-up (refer to the RIN spec in DC Electrical Characteristics).
VSS
Power supply Ground for the device. Must be connected to the ground of the system.
VDD
Power supply Power supply input to the device.
Note
1. SI may be connected to SO for a single pin data interface.
Document Number: 001-90867 Rev. *E
Page 3 of 22
CY15B256Q
Functional Overview
The CY15B256Q is a serial F-RAM memory. The memory array
is logically organized as 32,768 × 8 bits and is accessed using
an industry-standard serial peripheral interface (SPI) bus. The
functional operation of the F-RAM is similar to serial flash and
serial EEPROMs. The major difference between the
CY15B256Q and a serial flash or EEPROM with the same pinout
is the F-RAM's superior write performance, high endurance, and
low power consumption.
Memory Architecture
When accessing the CY15B256Q, the user addresses 32K
locations of eight data bits each. These eight data bits are shifted
in or out serially. The addresses are accessed using the SPI
protocol, which includes a chip select (to permit multiple devices
on the bus), an opcode, and a two-byte address. The upper bit
of the address range is 'don't care' value. The complete address
of 15 bits specifies each byte address uniquely.
Most functions of the CY15B256Q are either controlled by the
SPI interface or are handled by on-board circuitry. The access
time for the memory operation is essentially zero, beyond the
time needed for the serial protocol. That is, the memory is read
or written at the speed of the SPI bus. Unlike a serial flash or
EEPROM, it is not necessary to poll the device for a ready
condition because writes occur at bus speed. By the time a new
bus transaction can be shifted into the device, a write operation
is complete. This is explained in more detail in Memory
Operation on page 8.
Serial Peripheral Interface - SPI Bus
The CY15B256Q is a SPI slave device and operates at speeds
up to 40 MHz. This high-speed serial bus provides high-performance serial communication to a SPI master. Many common
microcontrollers have hardware SPI ports allowing a direct
interface. It is quite simple to emulate the port using ordinary port
pins for microcontrollers that do not. The CY15B256Q operates
in SPI Mode 0 and 3.
SPI Overview
The SPI is a four-pin interface with Chip Select (CS), Serial Input
(SI), Serial Output (SO), and Serial Clock (SCK) pins.
The SPI is a synchronous serial interface, which uses clock and
data pins for memory access and supports multiple devices on
the data bus. A device on the SPI bus is activated using the CS
pin.
The relationship between chip select, clock, and data is dictated
by the SPI mode. This device supports SPI modes 0 and 3. In
both of these modes, data is clocked into the F-RAM on the rising
edge of SCK starting from the first rising edge after CS goes
active.
The SPI protocol is controlled by opcodes. These opcodes
specify the commands from the bus master to the slave device.
After CS is activated, the first byte transferred from the bus
Document Number: 001-90867 Rev. *E
master is the opcode. Following the opcode, any addresses and
data are then transferred. The CS must go inactive after an
operation is complete and before a new opcode can be issued.
The commonly used terms in the SPI protocol are as follows:
SPI Master
The SPI master device controls the operations on a SPI bus. An
SPI bus may have only one master with one or more slave
devices. All the slaves share the same SPI bus lines and the
master may select any of the slave devices using the CS pin. All
of the operations must be initiated by the master activating a
slave device by pulling the CS pin of the slave LOW. The master
also generates the SCK and all the data transmission on SI and
SO lines are synchronized with this clock.
SPI Slave
The SPI slave device is activated by the master through the Chip
Select line. A slave device gets the SCK as an input from the SPI
master and all the communication is synchronized with this
clock. An SPI slave never initiates a communication on the SPI
bus and acts only on the instruction from the master.
The CY15B256Q operates as an SPI slave and may share the
SPI bus with other SPI slave devices.
Chip Select (CS)
To select any slave device, the master needs to pull down the
corresponding CS pin. Any instruction can be issued to a slave
device only while the CS pin is LOW. When the device is not
selected, data through the SI pin is ignored and the serial output
pin (SO) remains in a high-impedance state.
Note A new instruction must begin with the falling edge of CS.
Therefore, only one opcode can be issued for each active Chip
Select cycle.
Serial Clock (SCK)
The Serial Clock is generated by the SPI master and the
communication is synchronized with this clock after CS goes
LOW.
The CY15B256Q enables SPI modes 0 and 3 for data communication. In both of these modes, the inputs are latched by the
slave device on the rising edge of SCK and outputs are issued
on the falling edge. Therefore, the first rising edge of SCK
signifies the arrival of the first bit (MSB) of a SPI instruction on
the SI pin. Further, all data inputs and outputs are synchronized
with SCK.
Data Transmission (SI/SO)
The SPI data bus consists of two lines, SI and SO, for serial data
communication. SI is also referred to as Master Out Slave In
(MOSI) and SO is referred to as Master In Slave Out (MISO). The
master issues instructions to the slave through the SI pin, while
the slave responds through the SO pin. Multiple slave devices
may share the SI and SO lines as described earlier.
The CY15B256Q has two separate pins for SI and SO, which can
be connected with the master as shown in Figure 2.
Page 4 of 22
CY15B256Q
For a microcontroller that has no dedicated SPI bus, a
general-purpose port may be used. To reduce hardware
resources on the controller, it is possible to connect the two data
pins (SI, SO) together and tie off (HIGH) the HOLD and WP pins.
Figure 3 shows such a configuration, which uses only three pins.
Serial Opcode
After the slave device is selected with CS going LOW, the first
byte received is treated as the opcode for the intended operation.
CY15B256Q uses the standard opcodes for memory accesses.
Invalid Opcode
Most Significant Bit (MSB)
If an invalid opcode is received, the opcode is ignored and the
device ignores any additional serial data on the SI pin until the
next falling edge of CS, and the SO pin remains tristated.
The SPI protocol requires that the first bit to be transmitted is the
Most Significant Bit (MSB). This is valid for both address and
data transmission.
Status Register
The 256-Kbit serial F-RAM requires a 2-byte address for any
read or write operation. Because the address is only 15 bits, the
upper bit which is fed in is ignored by the device. Although the
upper bit is ‘don’t care’, Cypress recommends that these bits be
set to 0s to enable seamless transition to higher memory
densities.
CY15B256Q has an 8-bit Status Register. The bits in the Status
Register are used to configure the device. These bits are
described in Table 3 on page 7.
Figure 2. System Configuration with SPI Port
SCK
MOSI
MISO
SCK
SPI
Microcontroller
SI
SO
CY15B256Q
CS HOLD WP
SCK
SI
SO
CY15B256Q
CS HOLD WP
CS1
HO LD 1
WP1
CS2
HO LD 2
WP2
Figure 3. System Configuration without SPI Port
P1.0
P1.1
SCK
SI
SO
Microcontroller
CY15B256Q
CS HOLD WP
P1.2
SPI Modes
■
SPI Mode 0 (CPOL = 0, CPHA = 0)
active. If the clock starts from a HIGH state (in mode 3), the first
rising edge after the clock toggles is considered. The output data
is available on the falling edge of SCK.The two SPI modes are
shown in Figure 4 on page 6 and Figure 5 on page 6. The status
of the clock when the bus master is not transferring data is:
■
SPI Mode 3 (CPOL = 1, CPHA = 1)
■
SCK remains at 0 for Mode 0
■
SCK remains at 1 for Mode 3
CY15B256Q may be driven by a microcontroller with its SPI
peripheral running in either of the following two modes:
For both these modes, the input data is latched in on the rising
edge of SCK starting from the first rising edge after CS goes
Document Number: 001-90867 Rev. *E
Page 5 of 22
CY15B256Q
The device detects the SPI mode from the status of the SCK pin
when the device is selected by bringing the CS pin LOW. If the
SCK pin is LOW when the device is selected, SPI Mode 0 is
assumed and if the SCK pin is HIGH, it works in SPI Mode 3.
Figure 4. SPI Mode 0
CS
0
1
2
3
5
4
6
7
SCK
SI
7
6
5
4
3
2
1
0
MSB
LSB
WREN - Set Write Enable Latch
The CY15B256Q will power up with writes disabled. The WREN
command must be issued before any write operation. Sending
the WREN opcode allows the user to issue subsequent opcodes
for write operations. These include writing the Status Register
(WRSR) and writing the memory (WRITE).
Sending the WREN opcode causes the internal Write Enable
Latch to be set. A flag bit in the Status Register, called WEL,
indicates the state of the latch. WEL = ’1’ indicates that writes are
permitted. Attempting to write the WEL bit in the Status Register
has no effect on the state of this bit - only the WREN opcode can
set this bit. The WEL bit will be automatically cleared on the rising
edge of CS following a WRDI, a WRSR, or a WRITE operation.
This prevents further writes to the Status Register or the F-RAM
array without another WREN command. Figure 6 illustrates the
WREN command bus configuration.
Figure 6. WREN Bus Configuration
Figure 5. SPI Mode 3
CS
CS
0
0
1
2
3
5
4
6
7
1
2
3
4
5
6
7
SCK
SCK
0
SI
SI
7
6
5
4
3
2
MSB
1
0
LSB
0
0
0
1
1
0
HI-Z
SO
WRDI - Reset Write Enable Latch
Power Up to First Access
The CY15B256Q is not accessible for a tPU time after power-up.
Users must comply with the timing parameter tPU, which is the
minimum time from VDD(min) to the first CS LOW.
Command Structure
There are nine commands, called opcodes, that can be issued
by the bus master to the CY15B256Q. They are listed in Table 1.
These opcodes control the functions performed by the memory.
Table 1. Opcode Commands
Name
WREN
WRDI
RDSR
WRSR
READ
FSTRD
Description
Set write enable latch
Reset write enable latch
Read Status Register
Write Status Register
Read memory data
Fast read memory data
Opcode
0000 0110b
0000 0100b
0000 0101b
0000 0001b
0000 0011b
0000 1011b
WRITE
SLEEP
RDID
Reserved
Write memory data
Enter sleep mode
Read device ID
Reserved
0000 0010b
1011 1001b
1001 1111b
1100 0011b
1100 0010b
0101 1010b
0101 1011b
Document Number: 001-90867 Rev. *E
0
The WRDI command disables all write activity by clearing the
Write Enable Latch. The user can verify that writes are disabled
by reading the WEL bit in the Status Register and verifying that
WEL is equal to ‘0’. Figure 7 illustrates the WRDI command bus
configuration.
Figure 7. WRDI Bus Configuration
CS
0
1
2
3
4
5
6
7
SCK
SI
SO
0
0
0
0
0
1
0
0
HI-Z
Page 6 of 22
CY15B256Q
Status Register and Write Protection
The write protection features of the CY15B256Q are multi-tiered and are enabled through the status register. The status register is
organized as follows (the default value shipped from the factory for bits in the status register is ‘0’):
Table 2. Status Register
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
WPEN (0)
X (0)
X (0)
X (0)
BP1 (0)
BP0 (0)
WEL (0)
X (0)
Table 3. Status Register Bit Definition
Bit
Definition
Description
Bit 0
Don’t care
This bit is non-writable and always returns ‘0’ upon read.
Bit 1 (WEL)
Write Enable
WEL indicates if the device is write enabled. This bit defaults to ‘0’ (disabled) on power-up.
WEL = '1' --> Write enabled
WEL = '0' --> Write disabled
Bit 2 (BP0)
Block Protect bit ‘0’
Used for block protection. For details, see Table 4 on page 7.
Bit 3 (BP1)
Block Protect bit ‘1’
Used for block protection. For details, see Table 4 on page 7.
Bit 4-6
Don’t care
These bits are non-writable and always return ‘0’ upon read.
Bit 7 (WPEN)
Write Protect Enable bit Used to enable the function of Write Protect Pin (WP). For details, see Table 5 on page 7.
Bits 0 and 4-6 are fixed at ‘0’; none of these bits can be modified.
Note that bit 0 ("Ready or Write in progress” bit in serial flash and
EEPROM) is unnecessary, as the F-RAM writes in real-time and
is never busy, so it reads out as a ‘0’. An exception to this is when
the device is waking up from sleep mode, which is described in
Sleep Mode on page 10. The BP1 and BP0 control the software
write-protection features and are nonvolatile bits. The WEL flag
indicates the state of the Write Enable Latch. Attempting to
directly write the WEL bit in the Status Register has no effect on
its state. This bit is internally set and cleared via the WREN and
WRDI commands, respectively.
BP1 and BP0 are memory block write protection bits. They
specify portions of memory that are write-protected as shown in
Table 4.
Table 4. Block Memory Write Protection
BP1
BP0
Protected Address Range
0
0
None
0
1
6000h to 7FFFh (upper 1/4)
1
0
4000h to 7FFFh (upper 1/2)
1
1
0000h to 7FFFh (all)
The BP1 and BP0 bits and the Write Enable Latch are the only
mechanisms that protect the memory from writes. The remaining
write protection features protect inadvertent changes to the block
protect bits.
The write protect enable bit (WPEN) in the Status Register
controls the effect of the hardware write protect (WP) pin. When
the WPEN bit is set to '0', the status of the WP pin is ignored.
When the WPEN bit is set to '1', a LOW on the WP pin inhibits a
Document Number: 001-90867 Rev. *E
write to the Status Register. Thus the Status Register is
write-protected only when WPEN = '1' and WP = '0'.
Table 5 summarizes the write protection conditions.
Table 5. Write Protection
WEL WPEN WP
0
1
1
1
X
0
1
1
X
X
0
1
Protected
Blocks
Protected
Protected
Protected
Protected
Unprotected
Status
Blocks
Register
Protected
Protected
Unprotected Unprotected
Unprotected
Protected
Unprotected Unprotected
RDSR - Read Status Register
The RDSR command allows the bus master to verify the
contents of the Status Register. Reading the status register
provides information about the current state of the
write-protection features. Following the RDSR opcode, the
CY15B256Q will return one byte with the contents of the Status
Register.
WRSR - Write Status Register
The WRSR command allows the SPI bus master to write into the
Status Register and change the write protect configuration by
setting the WPEN, BP0, and BP1 bits as required. Before issuing
a WRSR command, the WP pin must be HIGH or inactive. Note
that on the CY15B256Q, WP only prevents writing to the Status
Register, not the memory array. Before sending the WRSR
command, the user must send a WREN command to enable
writes. Executing a WRSR command is a write operation and
therefore, clears the Write Enable Latch.
Page 7 of 22
CY15B256Q
Figure 8. RDSR Bus Configuration
CS
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
SCK
Opcode
0
SI
0
0
0
0
1
0
1
0
Data
HI-Z
SO
D7 D6 D5 D4 D3 D2 D1 D0
MSB
LSB
Figure 9. WRSR Bus Configuration (WREN not shown)
CS
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
SCK
Data
Opcode
SI
0
SO
0
0
0
0
0
0
1 D7 X
MSB
X D3 D2 X
X
LSB
HI-Z
Memory Operation
The SPI interface, which is capable of a high clock frequency,
highlights the fast write capability of the F-RAM technology.
Unlike serial flash and EEPROMs, the CY15B256Q can perform
sequential writes at bus speed. No page register is needed and
any number of sequential writes may be performed.
Write Operation
All writes to the memory begin with a WREN opcode with CS
being asserted and deasserted. The next opcode is WRITE. The
WRITE opcode is followed by a two-byte address containing the
15-bit address (A14-A0) of the first data byte to be written into
the memory. The upper bit of the two-byte address is ignored.
Subsequent bytes are data bytes, which are written sequentially.
Addresses are incremented internally as long as the bus master
continues to issue clocks and keeps CS LOW. If the last address
of 7FFFh is reached, the counter will roll over to 0000h. Data is
written to MSB first. The rising edge of CS terminates a write
operation. A write operation is shown in Figure 10.
Note When a burst write reaches a protected block address, the
automatic address increment stops and all the subsequent data
bytes received for write will be ignored by the device.
EEPROMs use page buffers to increase their write throughput.
This compensates for the technology's inherently slow write
operations. F-RAM memories do not have page buffers because
each byte is written to the F-RAM array immediately after it is
Document Number: 001-90867 Rev. *E
X
clocked in (after the eighth clock). This allows any number of
bytes to be written without page buffer delays.
Note If the power is lost in the middle of the write operation, only
the last completed byte will be written.
Read Operation
After the falling edge of CS, the bus master can issue a READ
opcode. Following the READ command is a two-byte address
containing the 15-bit address (A14-A0) of the first byte of the
read operation. The upper bit of the address is ignored. After the
opcode and address are issued, the device drives out the read
data on the next eight clocks. The SI input is ignored during read
data bytes. Subsequent bytes are data bytes, which are read out
sequentially. Addresses are incremented internally as long as
the bus master continues to issue clocks and CS is LOW. If the
last address of 7FFFh is reached, the counter will roll over to
0000h. Data is read MSB first. The rising edge of CS terminates
a read operation and tristates the SO pin. A read operation is
shown in Figure 11.
Fast Read Operation
The CY15B256Q supports a FAST READ opcode (0Bh) that is
provided for code compatibility with serial flash devices. The
FAST READ opcode is followed by a two-byte address
containing the 15-bit address (A14-A0) of the first byte of the
read operation and then a dummy byte. The dummy byte inserts
a read latency of an 8-clock cycle. The fast read operation is
otherwise the same as an ordinary read operation except that it
Page 8 of 22
CY15B256Q
requires an additional dummy byte. After receiving opcode,
address, and a dummy byte, the CY15B256Q starts driving its
SO line with data bytes, with MSB first, and continues transmitting as long as the device is selected and the clock is
available. In case of bulk read, the internal address counter is
incremented automatically, and after the last address 7FFFh is
reached, the counter rolls over to 0000h. When the device is
driving data on its SO line, any transition on its SI line is ignored.
The rising edge of CS terminates a fast read operation and
tristates the SO pin. A Fast Read operation is shown in Figure 12.
Figure 10. Memory Write (WREN not shown) Operation
CS
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
Opcode
0
SI
0
0
0
0
~
~ ~
~
0
SCK
12 13 14 15 0
1
15-bit Address
0
1
0
X A14 A13 A12 A11 A10 A9 A8
MSB
2
3
4
5
6
7
Data
A3 A2 A1 A0 D7 D6 D5 D4 D3 D2 D1 D0
LSB MSB
LSB
HI-Z
SO
Figure 11. Memory Read Operation
CS
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
SCK
Opcode
0
SI
0
0
0
~
~ ~
~
0
12 13 14 15 0
1
2
3
4
5
6
7
15-bit Address
0
0
1
1
X A14 A13 A12 A11 A10 A9 A8
MSB
A3 A2 A1 A0
LSB
Data
HI-Z
SO
D7 D6 D5 D4 D3 D2 D1 D0
MSB
LSB
Figure 12. Fast Read Operation
CS
1
2
3
4
5 6
7
0
1
2
3
4
SCK
Opcode
SI
0
0
0
0
1
5
6
7
~
~ ~
~
0
12 13 14 15 16 17 18 19 20 21 22 23 0
1 1
X A14 A13 A12 A11 A10 A9 A8
MSB
SO
HI-Z
A3 A2 A1 A0 X
X
X
X
X
X
X
3 4
5
6
7
X
LSB
Data
D7 D6 D5 D4 D3 D2 D1 D0
MSB
Document Number: 001-90867 Rev. *E
2
Dummy Byte
15-bit Address
0
1
LSB
Page 9 of 22
CY15B256Q
HOLD Pin Operation
The HOLD pin can be used to interrupt a serial operation without
aborting it. If the bus master pulls the HOLD pin LOW while SCK
is LOW, the current operation will pause. Taking the HOLD pin
HIGH while SCK is LOW will resume an operation. The
transitions of HOLD must occur while SCK is LOW, but the SCK
and CS pin can toggle during a hold state.
~
~
Figure 13. HOLD Operation [2]
~
~
CS
~
~
SCK
~
~
HOLD
VALID IN
VALID IN
~
~
SI
SO
Sleep Mode
A low-power sleep mode is implemented on the CY15B256Q
device. The device will enter the low-power state when the
SLEEP opcode B9h is clocked-in and a rising edge of CS is
applied. When in sleep mode, the SCK and SI pins are ignored
and SO will be HI-Z, but the device continues to monitor the CS
pin. On the next falling edge of CS, the device will return to
normal operation within tREC time. The SO pin remains in a HI-Z
state during the wakeup period. The device does not necessarily
respond to an opcode within the wakeup period. To start the
wakeup procedure, the controller may send a “dummy” read, for
example, and wait the remaining tREC time.
Figure 14. Sleep Mode Operation
Enters Sleep Mode
t REC Recovers from Sleep Mode
CS
0
1
2
3
4
5
6
7
t SU
SCK
SI
1
0
1
1
1
0
0
SO
1
VALID IN
HI-Z
Note
2. Figure 13 shows the HOLD operation for input mode and output mode.
Document Number: 001-90867 Rev. *E
Page 10 of 22
CY15B256Q
Device ID
The CY15B256Q device can be interrogated for its
manufacturer, product identification, and die revision. The RDID
opcode 9Fh allows the user to read the manufacturer ID and
product ID, both of which are read-only bytes. The
JEDEC-assigned manufacturer ID places the Cypress
(Ramtron) identifier in bank 7; therefore, there are six bytes of
the continuation code 7Fh followed by the single byte C2h. There
are two bytes of product ID, which includes a family code, a
density code, a sub code, and the product revision code.
Table 6. Device ID
Device ID Description
71–16
(56 bits)
Device ID
(9 bytes)
Manufacturer ID
7F7F7F7F7F7FC22288h
0111111101111111011111110111
1111011111110111111111000010
15–13
(3 bits)
12–8
(5 bits)
Family
Density
001
00010
7–6
(2 bits)
5–3
(3 bits)
2–0
(3 bits)
Sub
Rev
Rsvd
10
001
000
Product ID
Figure 15. Read Device ID
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
SCK
~
~
CS
44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71
Opcode
SO
1
0
0 1
1
1
1
1
HI-Z
D7 D6 D5 D4 D3 D2 D1 D0
~
~
SI
D3 D2 D1 D0 D7 D6 D5 D4 D3 D2 D1 D0 D7 D6 D5 D4 D3 D2 D1 D0 D7 D6 D5 D4 D3 D2 D1 D0
MSB
LSB
9-Byte Device ID
Document Number: 001-90867 Rev. *E
Page 11 of 22
CY15B256Q
Endurance
The CY15B256Q devices are capable of being accessed at least
1014 times, reads or writes. An F-RAM memory operates with a
read and restore mechanism. Therefore, an endurance cycle is
applied on a row basis for each access (read or write) to the
memory array. The F-RAM architecture is based on an array of
rows and columns of 4K rows of 64-bits each. The entire row is
internally accessed once whether a single byte or all eight bytes
are read or written. Each byte in the row is counted only once in
an endurance calculation. Table 7 shows endurance calculations
for a 64-byte repeating loop, which includes an opcode, a starting
address, and a sequential 64-byte data stream. This causes
each byte to experience one endurance cycle through the loop.
Document Number: 001-90867 Rev. *E
Table 7. Time to Reach Endurance Limit for Repeating
64-byte Loop
SCK Freq
(MHz)
Endurance
Cycles/sec
Endurance
Cycles/year
Years to Reach
Limit
40
74,620
2.35 × 1012
42.6
37,310
1012
85.1
20
10
5
18,660
9,330
1.18 ×
5.88 × 10
11
170.2
2.94 × 10
11
340.3
Page 12 of 22
CY15B256Q
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. These user guidelines are not tested.
Storage temperature ............................... –55 C to + 125 C
Package power dissipation
capability (TA = 25 °C) ................................................. 1.0 W
Surface mount lead soldering
temperature (3 seconds) ........................................ + 260 C
DC output current (1 output at a time, 1s duration) .... 15 mA
Maximum accumulated storage time
At 125 °C ambient temperature ................................. 1000 h
At 85 °C ambient temperature ................................ 10 Years
Electrostatic discharge voltage
Human Body Model (JEDEC Std JESD22-A114-B) ................ 2 kV
Ambient temperature
with power applied ................................... –55 °C to +125 °C
Latch-up current .................................................... > 140 mA
Supply voltage on VDD relative to VSS ........–1.0 V to + 4.5 V
Operating Range
Charged Device Model (JEDEC Std JESD22-C101-A) ........... 500 V
Input voltage ........... –1.0 V to +4.5 V and VIN < VDD + 1.0 V
DC voltage applied to outputs
in HI-Z state ........................................ –0.5 V to VDD + 0.5 V
Range
Automotive-A
Ambient Temperature
(TA)
–40 C to +85 C
VDD
2.0 V to 3.6 V
Transient voltage (< 20 ns) on
any pin to ground potential ................. –2.0 V to VDD + 2.0 V
DC Electrical Characteristics
Over the Operating Range
Parameter
Description
VDD
Power supply
IDD
VDD supply current
Test Conditions
Min
Typ [3]
Max
Unit
2.0
3.3
3.6
V
SCK toggling between VDD – fSCK = 40 MHz
0.2 V and VSS, other inputs VSS f
SCK = 1 MHz
or VDD – 0.2 V. SO = Open.
–
–
2.5
mA
–
–
0.22
mA
ISB
VDD standby current
CS = VDD. All other inputs VSS or VDD.
–
90
150
A
IZZ
Sleep mode current
CS = VDD. All other inputs VSS or VDD.
–
5
8
A
ILI
Input leakage current
(Except HOLD)
VSS < VIN < VDD
–1
–
+1
A
–100
–
+1
A
–1
–
+1
A
0.7 × VDD
–
VDD + 0.3
V
– 0.3
–
0.3 × VDD
V
2.4
–
–
V
VDD – 0.2
–
–
V
Input leakage current
(for HOLD)
ILO
Output leakage current
VIH
Input HIGH voltage
VIL
Input LOW voltage
VOH1
Output HIGH voltage
IOH = –1 mA, VDD = 2.7 V.
VOH2
Output HIGH voltage
IOH = –100 A
VOL1
Output LOW voltage
IOL = 2 mA, VDD = 2.7 V
–
–
0.4
V
VOL2
Output LOW voltage
IOL = 150 A
–
–
0.2
V
Input resistance (HOLD) For VIN = VIL(max)
800
–
–
k
For VIN = VIH(min)
30
–
–
k
Rin
[4]
VSS < VOUT < VDD
Notes
3. Typical values are at 25 °C, VDD = VDD(typ). Not 100% tested.
4. The input pull-up circuit is strong (30 k) when the input voltage is above VIH and weak (800 k) when the input voltage is below VIL.
Document Number: 001-90867 Rev. *E
Page 13 of 22
CY15B256Q
Data Retention and Endurance
Parameter
TDR
NVC
Description
Test condition
TA = 85 C
Data retention
Endurance
Min
Max
Unit
10
–
Years
TA = 75 C
38
–
TA = 65 C
151
–
Over operating temperature
1014
–
Cycles
Capacitance
Parameter [5]
Description
Test Conditions
CO
Output pin capacitance (SO)
CI
Input pin capacitance
TA = 25 C, f = 1 MHz, VDD = VDD(typ)
Max
Unit
8
pF
6
pF
Thermal Resistance
Parameter
Description
JA
Thermal resistance
(junction to ambient)
JC
Thermal resistance
(junction to case)
Test Conditions
8-pin SOIC
Unit
Test conditions follow standard test methods and procedures for
measuring thermal impedance, per EIA / JESD51.
146
C/W
48
C/W
AC Test Conditions
Input pulse levels .................................10% and 90% of VDD
Input rise and fall times ...................................................3 ns
Input and output timing reference levels ................0.5 × VDD
Output load capacitance .............................................. 30 pF
Note
5. This parameter is periodically sampled and not 100% tested.
Document Number: 001-90867 Rev. *E
Page 14 of 22
CY15B256Q
AC Switching Characteristics
Over the Operating Range
Parameters [6]
Cypress
Parameter
Description
Alt.
Parameter
VDD = 2.0 V to 3.6 V
VDD = 2.7 V to 3.6 V
Min
Max
Min
Max
Unit
fSCK
–
SCK clock frequency
0
25
0
40
MHz
tCH
–
Clock HIGH time
18
–
11
–
ns
tCL
–
Clock LOW time
18
–
11
–
ns
tCSU
tCSS
Chip select setup
12
–
10
–
ns
tCSH
tCSH
Chip select hold
12
–
10
–
ns
tHZCS
Output disable time
–
20
–
12
ns
tODV
tCO
Output data valid time
–
16
–
9
ns
tOH
–
Output hold time
0
–
0
–
ns
tD
tOD
[7, 8]
–
Deselect time
60
–
40
–
ns
[9, 10]
–
Data in rise time
–
50
–
50
ns
tF[9, 10]
–
Data in fall time
–
50
–
50
ns
tSU
tSD
Data setup time
8
–
5
–
ns
tH
tHD
Data hold time
8
–
5
–
ns
tHS
tSH
HOLD setup time
12
–
10
–
ns
tHH
tHH
HOLD hold time
12
–
10
–
ns
tHZ[7, 8]
tLZ[8]
tHHZ
HOLD LOW to output HI-Z
–
25
–
20
ns
tHLZ
HOLD HIGH to data active
–
25
–
20
ns
tR
Notes
6. Test conditions assume a signal transition time of 3 ns or less, timing reference levels of 0.5 × VDD, input pulse levels of 10% to 90% of VDD, output loading of the
specified IOL/IOH and 30 pF load capacitance shown in AC Test Conditions.
7. tOD and tHZ are specified with a load capacitance of 5 pF. Transition is measured when the outputs enter a high impedance state.
8. Characterized but not 100% tested in production.
9. Rise and fall times measured between 10% and 90% of waveform.
10. These parameters are guaranteed by design and are not tested.
Document Number: 001-90867 Rev. *E
Page 15 of 22
CY15B256Q
Figure 16. Synchronous Data Timing (Mode 0)
tD
CS
tCSU
tCH
tCL
tCSH
SCK
tSU
SI
tH
VALID IN
VALID IN
VALID IN
tOH
tODV
SO
HI-Z
tOD
HI-Z
CS
SCK
tHH
~
~
~
~
Figure 17. HOLD Timing
tHS
~
~
VALID IN
tHZ
Document Number: 001-90867 Rev. *E
VALID IN
tLZ
~
~
SO
tSU
~
~
HOLD
SI
tHH
tHS
Page 16 of 22
CY15B256Q
Power Cycle Timing
Over the Operating Range
Parameter
Description
Min
Max
Unit
tPU
Power-up VDD (min) to first access (CS LOW)
1
–
ms
tPD
Last access (CS HIGH) to power-down (VDD(min))
0
–
µs
tVR [11, 12]
VDD power-up ramp rate
50
–
µs/V
tVF [11, 12]
VDD power-down ramp rate
100
–
µs/V
tREC [13]
Recovery time from sleep mode
–
400
µs
VDD
~
~
Figure 18. Power Cycle Timing
VDD(min)
tVR
CS
tVF
tPD
~
~
tPU
VDD(min)
Notes
11. Slope measured at any point on VDD waveform.
12. These parameters are guaranteed by design and are not tested.
13. Refer to Figure 14 for sleep mode recovery timing.
Document Number: 001-90867 Rev. *E
Page 17 of 22
CY15B256Q
Ordering Information
Ordering Code
Package
Diagram
Package Type
CY15B256Q-SXA
51-85066 8-pin SOIC
CY15B256Q-SXAT
51-85066 8-pin SOIC
Operating Range
–40 C to +85 C
All these parts are Pb-free. Contact your local Cypress sales representative for availability of these parts.
Ordering Code Definitions
CY 15
B
256 Q - S
X
A
T
Option:
blank = Standard; T = Tape and Reel
Temperature Range:
A = Automotive-A (–40 C to +85 C)
X = Pb-free
Package Type: S = 8-pin SOIC
Q = SPI F-RAM
Density: 256 = 256-Kbit
Voltage: B = 2.0 V to 3.6 V
F-RAM
Cypress
Document Number: 001-90867 Rev. *E
Page 18 of 22
CY15B256Q
Package Diagram
Figure 19. 8-pin SOIC (150 Mils) Package Outline, 51-85066
51-85066 *H
Document Number: 001-90867 Rev. *E
Page 19 of 22
CY15B256Q
Acronyms
Acronym
Document Conventions
Description
Units of Measure
CPHA
Clock Phase
CPOL
Clock Polarity
°C
degree Celsius
EEPROM
Electrically Erasable Programmable Read-Only
Memory
Hz
hertz
EIA
Electronic Industries Alliance
kHz
kilohertz
F-RAM
Ferroelectric Random Access Memory
k
kilohm
I/O
Input/Output
Kbit
Kilobit
JEDEC
Joint Electron Devices Engineering Council
MHz
megahertz
JESD
JEDEC Standards
A
microampere
LSB
Least Significant Bit
F
microfarad
MSB
Most Significant Bit
s
microsecond
RoHS
Restriction of Hazardous Substances
mA
milliampere
SPI
Serial Peripheral Interface
ms
millisecond
ns
nanosecond
ohm
%
percent
pF
picofarad
V
volt
W
watt
Document Number: 001-90867 Rev. *E
Symbol
Unit of Measure
Page 20 of 22
CY15B256Q
Document History Page
Document Title: CY15B256Q, 256-Kbit (32K × 8) Automotive Serial (SPI) F-RAM
Document Number: 001-90867
Rev.
ECN No.
Orig. of
Change
Submission
Date
**
4265427
GVCH
01/29/2014
New data sheet.
*A
4390913
GVCH
06/20/2014
Changed status from Advance to Preliminary.
Description of Change
Removed TDFN package support
Pin Definitions: Updated HOLD pin description
Added the sentence, “This pin has a weak internal pull-up (refer to the RIN spec
in DC Electrical Characteristics)”.
Device ID
Updated from 7F7F7F7F7F7FC22208h to 7F7F7F7F7F7FC22288h
Maximum Ratings:Electrostatic Discharge Voltage
Removed machine model
DC Electrical Characteristics
Added ISB and IZZ typical value
Changed Rin value from 40 kto 30 kfor VIN = VIH(min) and 1 Mto 800 k
for VIN = VIL(max)
Updated footnote 4
Thermal Resistance: Added thermal resistance values
*B
4571858
GVCH
11/18/2014
Table 1: Added reserved opcodes - 0xC3, 0xC2, 0x5A, 0x5B
*C
4788238
GVCH
06/05/2015
Changed status from Preliminary to Final.
Updated Package Diagram:
spec 51-85066 – Changed revision from *F to *G.
Updated to new template.
*D
4883131
ZSK / PSR
09/03/2015
Updated Functional Description:
Added “For a complete list of related documentation, click here.” at the end.
Updated Maximum Ratings:
Removed “Maximum junction temperature”.
Added “Maximum accumulated storage time”.
Added “Ambient temperature with power applied”.
*E
5084285
GVCH
01/13/2016
Updated Ordering Information:
Updated part numbers.
Updated Package Diagram:
spec 51-85066 – Changed revision from *G to *H.
Document Number: 001-90867 Rev. *E
Page 21 of 22
CY15B256Q
Sales, Solutions, and Legal Information
Worldwide Sales and Design Support
Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office
closest to you, visit us at Cypress Locations.
PSoC® Solutions
Products
Automotive
Clocks & Buffers
Interface
Lighting & Power Control
Memory
PSoC
Touch Sensing
cypress.com/go/automotive
cypress.com/go/clocks
cypress.com/go/interface
cypress.com/go/powerpsoc
PSoC 1 | PSoC 3 | PSoC 4 | PSoC 5LP
Cypress Developer Community
Community | Forums | Blogs | Video | Training
cypress.com/go/memory
cypress.com/go/psoc
cypress.com/go/touch
USB Controllers
Wireless/RF
psoc.cypress.com/solutions
Technical Support
cypress.com/go/support
cypress.com/go/USB
cypress.com/go/wireless
© Cypress Semiconductor Corporation, 2014-2016. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of
any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for
medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as
critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems
application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign),
United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of,
and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress
integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without
the express written permission of Cypress.
Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES
OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not
assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where
a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer
assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Use may be limited by and subject to the applicable Cypress software license agreement.
Document Number: 001-90867 Rev. *E
Revised January 13, 2016
All products and company names mentioned in this document may be the trademarks of their respective holders.
Page 22 of 22