, One. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BCY70 BCY71/BCY72 GENERAL PURPOSE APPLICATIONS DESCRIPTION The BCY70, BCY71 and BCY72 are silicon planar epitaxial PNP transistors in Jedec TO-18 metaJ case. Ok. TO-18 INTERNAL SCHEMATIC DIAGRAM PNP ABSOLUTE MAXIMUM RATINGS Symbol Parameter Collector-base Voltage (IE = 0) Collector-emitter Voltage (le = 0) Emitter-base Voltage (Ic = 0} Collector Peak Current Total Power Dissipation at Tam6 s 25 °C Ptol Storage and Junction Temperature Tsto, T, Pulsed : pulse duration = 300 us. duty cyde = 1 %. VCBO VCEO VEBO ICM BCY70 Value BCY71 BCY72 -50 -45 -25 -40 -45 -25 Unit V V -5 V -200 mA 350 mW - 65 to 200 :C NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors IHbHMALDATA Rth J-C83B Rth j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 150 500 °C/W °C/W ELECTRICAL CHARACTERISTICS (Tamb = 25 °C unless otherwise specified) Symbol ICES IEBO VCE (sat)* VBE(sat)* hFE* hfa fr Parameter Collector Cutoff Current (V B e=0) Emitter cutoff Current Oo-O) Collector-emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Small Signal Current Gain (for BCY71 only) Transition Frequency Test Conditions For BCY70 VCE =-20 V VCE = - 50 V For BCY71 VCB = - 20 V VCB = - 45 V For BCY72 VCB = - 20 V VCB = - 25 V VEB = - 5 V lc =- 10 mA lc =- 50 mA lc =- 10 mA For BCY70 and lc =-50 mA For BCY70 l c =-0,1 mA lc = - 1 mA lc = - 1 0 m A lc = - 50 mA For BCY71 lc =-0.01 mA l c =-0.1 mA l c « - 1 mA lc =- 10mA lc = - 5 0 m A For BCY72 l c = - 1 mA lc =- 10mA lc = - 1 mA f = 1 kHz lc =-0,1 mA f = 10.7 MHz * Emitter-base Capacitance CCBO Collector-base Capacitance Pulsed : pulse duration n 300 us, duty cycle = 1 %. VCE VCE VCE VCE =- 1 V =-1 V =-1 V =- 1 V VCE = - 1 V Vce = - 1 V VCE = - 1 V VCE = - 1 V VCE =- 1 V VCE — 1 V VCE =- 1 V VCE =-10 V Typ. - 0.6 Max. Unit - 10 -500 nA nA -100 - 10 nA HA -100 - 10 -10 nA HA HA -0.25 -0.5 V V - 0.9 -1.2 V V 40 45 50 15 60 80 90 100 15 600 40 50 400 100 VCE =-20 V For BCY71 VCE =- 2 0 V 15 For BCY70 For BCY70 and BCY72 lc=0 V EB = - 1 V f - 1 MHz IE=0 VCB=-10V f » 1 MHz 250 200 lc--10mA f = 100 MHz CEBO IB =- 1 mA IB = - 5 mA IB =- 1 mA BCY71 Only IB =- 5 mA Mln. MHz - MHz MHz 8 6 PF PF ELECTRICAL CHARACTERISTICS (continued) Symbol Parameter NF hi. lc =-1 mA f = 1 kHz VCE =-10 V h,e Reverse Voltage Ratio (for BCY71 only) l c = - 1 mA f = 1kHz VCE =-10 V hoa Output Admittance (for BCY71 only) l c » - 1 mA f = 1 kHz VCE =-10 V Delay Time (for BCY70 and BCY72 only) VEE=3V Rise Time (for BCY70 and BCY72 only) lc=-10mA IBI = - 1 mA lc=-10mA IB1 = - 1 mA Storage Time (for BCY70 and BCY72 only) tr u tf ton tod Win. Typ. lc =-0.1 mA VCE = - 5 V Rg = 2 k O f = 10 to 10 000 Hz For BCY70 and BCY72 for BCY71 Input Impedance (for BCY71 only) td * Teat Conditions Noise Figure Max. Unit 6 2 dB dB kn 2 12 20x10-" us 10 60 ns 23 35 25 35 lc=-10mA VEE=3V |B1 =— |B2 =— 1 mA 270 350 Fall Time (for BCY70 and BCY72 only) lc=-10mA VEE=3V |B1 =- |B2 =-1 mA 50 80 Turn-on Time (for BCY70 and BCY72 only) lc=-10mA IBI = - 1 mA 48 65 Turn-off Time (for BCY70 and BCY72 only) lc=-10mA VEg=3V IBI =- lea =-1 rnA 320 420 TEST CIRCUIT Test Circuit for Switching Times. 3.0V -20V VBB=7.0V ns ns ns Vee=3V Pulsed : pulse duration = 300 us. duty cycle « 1 %. -20V ns VEE=3V ns