Cypress CY7C1305BV25-100BZC 18-mbit burst of 4 pipelined sram with qdr architecture Datasheet

CY7C1305BV25
CY7C1307BV25
PRELIMINARY
18-Mbit Burst of 4 Pipelined SRAM with
QDR™ Architecture
Features
Functional Description
• Separate independent Read and Write data ports
• 2.5V core power supply with HSTL Inputs and Outputs
The CY7C1305BV25/CY7C1307BV25 are 2.5V Synchronous
Pipelined SRAMs equipped with QDR architecture. QDR
architecture consists of two separate ports to access the
memory array. The Read port has dedicated Data Outputs to
support Read operations and the Write Port has dedicated
Data Inputs to support Write operations. QDR architecture has
separate data inputs and data outputs to completely eliminate
the need to “turn-around” the data bus required with common
I/O devices. Access to each port is accomplished through a
common address bus. Addresses for Read and Write
addresses are latched on alternate rising edges of the input
(K) clock. Accesses to the device’s Read and Write ports are
completely independent of one another. In order to maximize
data throughput, both Read and Write ports are equipped with
Double Data Rate (DDR) interfaces. Each address location is
associated with four 18-bit words (CY7C1305BV25) and four
36-bit words (CY7C1307BV25) that burst sequentially into or
out of the device. Since data can be transferred into and out
of the device on every rising edge of both input clocks (K/K and
C/C) memory bandwidth is maximized while simplifying
system design by eliminating bus “turn-arounds.”
• 13 x 15 x 1.4 mm 1.0-mm pitch fBGA package, 165 ball
(11x15 matrix)
Depth expansion is accomplished with Port Selects for each
port. Port selects allow each port to operate independently.
• Variable drive HSTL output buffers
All synchronous inputs pass through input registers controlled
by the K or K input clocks. All data outputs pass through output
registers controlled by the C or C input clocks. Writes are
conducted with on-chip synchronous self-timed write circuitry.
• Supports concurrent transactions
• 167-MHz clock for high bandwidth
• 2.5 ns Clock-to-Valid access time
• 4-Word Burst for reducing the address bus frequency
• Double Data Rate (DDR) interfaces on both Read and
Write Ports (data transferred at 333 MHz) @167 MHz
• Two input clocks (K and K) for precise DDR timing
• SRAM uses rising edges only
• Two output clocks (C and C) accounts for clock skew
and flight time mismatching
• Single multiplexed address input bus latches address
inputs for both Read and Write ports
• Separate Port Selects for depth expansion
• Synchronous internally self-timed writes
• Expanded HSTL output voltage (1.4V–1.9V)
• JTAG interface
Configurations
• CY7C1305BV25 – 1M x 18
• CY7C1307BV25 – 512K x 36
Cypress Semiconductor Corporation
Document #: 38-05630 Rev. **
•
3901 North First Street
•
San Jose, CA 95134
•
408-943-2600
Revised July 29, 2004
CY7C1305BV25
CY7C1307BV25
PRELIMINARY
Logic Block Diagram (CY7C1305BV25)
D[17:0]
18
Address
Register
Read Add. Decode
Write Add. Decode
256Kx18 Array
CLK
Gen.
Write Write
Reg
Reg
256Kx18 Array
K
K
256Kx18 Array
18
256Kx18 Array
Address
Register
A[17:0]
Write Write
Reg
Reg
RPS
Control
Logic
C
C
Read Data Reg.
72
Vref
WPS
36
Reg.
Control
Logic
BWS[0:1]
A(17:0)
18
36
Reg.
18
Reg.
Q[17:0]
18
Logic Block Diagram (CY7C1307BV25)
D[35:0]
36
Address
Register
Read Add. Decode
Write Add. Decode
128K x 36 Array
CLK
Gen.
Write Write
Reg
Reg
128K x 36 Array
K
K
128K x 36 Array
17
Write Write
Reg
Reg
128K x 36 Array
A(16:0)
Address
Register
RPS
Control
Logic
C
C
Read Data Reg.
Vref
WPS
BWS[0:3]
144
72
Reg.
Control
Logic
A(16:0)
17
72
Reg.
36
Reg.
36
Q[35:0]
Selection Guide
CY7C1305BV25-167
CY7C1307BV25-167
CY7C1305BV25-133
CY7C1307BV25-133
CY7C1305BV25-100
CY7C1307BV25-100
Unit
Maximum Operating Frequency
167
133
100
MHz
Maximum Operating Current
TBD
TBD
TBD
mA
Document #: 38-05630 Rev. **
Page 2 of 21
CY7C1305BV25
CY7C1307BV25
PRELIMINARY
\
Pin Configuration–CY7C1305BV25 (Top View)
1
2
3
4
5
6
7
8
9
10
11
A
NC
GND/
144M
NC/ 36M
WPS
BWS1
K
NC
RPS
A
GND/
72M
NC
B
NC
Q9
D9
A
NC
K
BWS0
A
NC
NC
Q8
C
NC
NC
D10
VSS
A
NC
A
VSS
NC
Q7
D8
D
NC
D11
Q10
VSS
VSS
VSS
VSS
VSS
NC
NC
D7
E
NC
NC
Q11
VDDQ
VSS
VSS
VSS
VDDQ
NC
D6
Q6
F
NC
Q12
D12
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
Q5
G
NC
D13
Q13
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
D5
H
NC
VREF
VDDQ
VDDQ
VDD
VSS
VDD
VDDQ
VDDQ
VREF
ZQ
J
NC
NC
D14
VDDQ
VDD
VSS
VDD
VDDQ
NC
Q4
D4
K
NC
NC
Q14
VDDQ
VDD
VSS
VDD
VDDQ
NC
D3
Q3
L
NC
Q15
D15
VDDQ
VSS
VSS
VSS
VDDQ
NC
NC
Q2
M
NC
NC
D16
VSS
VSS
VSS
VSS
VSS
NC
Q1
D2
N
NC
D17
Q16
VSS
A
A
A
VSS
NC
NC
D1
P
NC
NC
Q17
A
A
C
A
A
NC
D0
Q0
R
TDO
TCK
A
A
A
C
A
A
A
TMS
TDI
Pin Configuration–CY7C1307BV25 (Top View)
1
2
3
4
5
6
7
8
9
10
11
A
NC
GND/
288M
NC/ 72M
WPS
BWS2
K
BWS1
RPS
NC/
36M
GND/
144M
NC
B
Q27
Q18
D18
A
BWS3
K
BWS0
A
D17
Q17
Q8
C
D27
Q28
D19
VSS
A
NC
A
VSS
D16
Q7
D8
D
D28
D20
Q19
VSS
VSS
VSS
VSS
VSS
Q16
D15
D7
E
Q29
D29
Q20
VDDQ
VSS
VSS
VSS
VDDQ
Q15
D6
Q6
F
Q30
Q21
D21
VDDQ
VDD
VSS
VDD
VDDQ
D14
Q14
Q5
G
D30
D22
Q22
VDDQ
VDD
VSS
VDD
VDDQ
Q13
D13
D5
H
NC
VREF
VDDQ
VDDQ
VDD
VSS
VDD
VDDQ
VDDQ
VREF
ZQ
J
D31
Q31
D23
VDDQ
VDD
VSS
VDD
VDDQ
D12
Q4
D4
K
Q32
D32
Q23
VDDQ
VDD
VSS
VDD
VDDQ
Q12
D3
Q3
L
Q33
Q24
D24
VDDQ
VSS
VSS
VSS
VDDQ
D11
Q11
Q2
M
D33
Q34
D25
VSS
VSS
VSS
VSS
VSS
D10
Q1
D2
N
D34
D26
Q25
VSS
A
A
A
VSS
Q10
D9
D1
P
Q35
D35
Q26
A
A
C
A
A
Q9
D0
Q0
R
TDO
TCK
A
A
A
C
A
A
A
TMS
TDI
Document #: 38-05630 Rev. **
Page 3 of 21
CY7C1305BV25
CY7C1307BV25
PRELIMINARY
Pin Definitions
Name
I/O
Description
D[x:0]
InputSynchronous
Data input signals, sampled on the rising edge of K and K clocks during valid write
operations.
CY7C1305BV25 – D[17:0]
CY7C1307BV25 – D[35:0]
WPS
InputSynchronous
Write Port Select, active LOW. Sampled on the rising edge of the K clock. When
asserted active, a Write operation is initiated. Deasserting will deselect the Write port.
Deselecting the Write port will cause D[x:0] to be ignored.
BWS0, BWS1,
BWS2, BWS3
InputSynchronous
Byte Write Select 0, 1, 2, and 3–active LOW. Sampled on the rising edge of the K and
K clocks during Write operations. Used to select which byte is written into the device
during the current portion of the Write operations. Bytes not written remain unaltered.
CY7C1305BV25 - BWS0 controls D[8:0] and BWS1 controls D[17:9].
CY7C1307BV25 - BWS0 controls D[8:0], BWS1 controls D[17:9], BWS2 controls D[26:18]
and BWS3 controls D[35:27]
All the Byte Write Selects are sampled on the same edge as the data. Deselecting a
Byte Write Select will cause the corresponding byte of data to be ignored and not written
into the device.
A
InputSynchronous
Address Inputs. Sampled on the rising edge of the K clock during active Read and Write
operations. These address inputs are multiplexed for both Read and Write operations.
Internally, the device is organized as 1M x 18 (4 arrays each of 256K x 18) for
CY7C1305BV25 and 512K x 36 (4 arrays each of 128K x 36) for CY7C1307BV25.
Therefore, only 18 address inputs for CY7C1305BV25 and 17 address inputs for
CY7C1307BV25. These inputs are ignored when the appropriate port is deselected.
Q[x:0]
OutputsSynchronous
Data Output signals. These pins drive out the requested data during a Read operation.
Valid data is driven out on the rising edge of both the C and C clocks during Read
operations or K and K when in single clock mode. When the Read port is deselected,
Q[x:0] are automatically three-stated.
CY7C1305BV25 - Q[17:0]
CY7C1307BV25 - Q[35:0]
RPS
InputSynchronous
Read Port Select, active LOW. Sampled on the rising edge of Positive Input Clock (K).
When active, a Read operation is initiated. Deasserting will cause the Read port to be
deselected. When deselected, the pending access is allowed to complete and the output
drivers are automatically three-stated following the next rising edge of the C clock. Each
read access consists of a burst of four sequential 18-bit or 36-bit transfers.
C
Input-Clock
Positive Output Clock Input. C is used in conjunction with C to clock out the Read data
from the device. C and C can be used together to deskew the flight times of various
devices on the board back to the controller. See application example for further details.
C
Input-Clock
Negative Output Clock Input. C is used in conjunction with C to clock out the Read
data from the device. C and C can be used together to deskew the flight times of various
devices on the board cack to the controller. See application example for further details.
K
Input-Clock
Positive Input Clock Input. The rising edge of K is used to capture synchronous inputs
to the device and to drive out data through Q[x:0] when in single clock mode. All accesses
are initiated on the rising edge of K.
K
Input-Clock
Negative Input Clock Input. K is used to capture synchronous inputs to the device and
to drive out data through Q[x:0] when in single clock mode.
Input
Output Impedance Matching Input. This input is used to tune the device outputs to the
system data bus impedance. Q[x:0] output impedance are set to 0.2 x RQ, where RQ is
a resistor connected between ZQ and ground. Alternately, this pin can be connected
directly to VDD, which enables the minimum impedance mode. This pin cannot be
connected directly to VSS or left unconnected.
ZQ
TDO
Output
TDO pin for JTAG
TCK
Input
TCK pin for JTAG
TDI
Input
TDI pin for JTAG
TMS
Input
TMS pin for JTAG
Document #: 38-05630 Rev. **
Page 4 of 21
CY7C1305BV25
CY7C1307BV25
PRELIMINARY
Pin Definitions (continued)
Name
I/O
Description
NC/36M
N/A
Address expansion for 36M. This is not connected to the die. Can be connected to any
voltage level on CY7C1305BV25/CY7C1307BV25.
GND/72M
Input
Address expansion for 72M. This should be tied LOW on the CY7C1305BV25.
NC/72M
N/A
Address expansion for 72M. This can be connected to any voltage level on
CY7C1307BV25.
GND/144M
Input
Address expansion for 144M. This should be tied LOW on
CY7C1305BV25/CY7C1307BV25.
GND/288M
Input
VREF
InputReference
VDD
Power Supply
VSS
Ground
VDDQ
NC
Power Supply
N/A
Address expansion for 144M. This should be tied LOW on CY7C1307BV25.
Reference Voltage Input. Static input used to set the reference level for HSTL inputs
and Outputs as well as AC measurement points.
Power supply inputs to the core of the device
Ground for the device
Power supply inputs for the outputs of the device
Not connected to the die. Can be tied to any voltage level.
Introduction
Functional Overview
The CY7C1305BV25/CY7C1307BV25 are synchronous
pipelined Burst SRAMs equipped with both a Read port and a
Write port. The Read port is dedicated to Read operations and
the Write Port is dedicated to Write operations. Data flows into
the SRAM through the Write port and out through the Read
port. These devices multiplex the address inputs in order to
minimize the number of address pins required. By having
separate Read and Write ports, the device completely eliminates the need to “turn-around” the data bus and avoids any
possible data contention, thereby simplifying system design.
Each access consists of four 18-bit data transfers in the case
of CY7C1305BV25 and four 36-bit data transfers in the case
of CY7C1307BV25, in two clock cycles.
Accesses for both ports are initiated on the rising edge of the
positive input clock (K). All synchronous input timing is referenced from the rising edge of the input clocks (K and K) and
all output timing is referenced to the rising edge of output
clocks (C and C, or K and K when in single clock mode).
All synchronous data inputs (D[x:0]) pass through input
registers controlled by the rising edge of input clocks (K and
K). All synchronous data outputs (Q[x:0]) pass through output
registers controlled by the rising edge of the output clocks (C
and C, or K and K when in single clock mode).
All synchronous control (RPS, WPS, BWS[0:x]) inputs pass
through input registers controlled by the rising edge of input
clocks (K and K).
CY7C1305BV25 is described in the following sections. The
same basic descriptions apply to CY7C1307BV25.
Read Operations
The CY7C1305BV25 is organized internally as 4 arrays of
256K x 18. Accesses are completed in a burst of four
sequential 18-bit data words. Read operations are initiated by
asserting RPS active at the rising edge of the Positive Input
Clock (K). The address presented to Address inputs are stored
in the Read address register. Following the next K clock rise
the corresponding lowest order 18-bit word of data is driven
Document #: 38-05630 Rev. **
onto the Q[17:0] using C as the output timing reference. On the
subsequent rising edge of C the next 18-bit data word is driven
onto the Q[17:0]. This process continues until all four 18-bit data
words have been driven out onto Q[17:0]. The requested data
will be valid 2.5 ns from the rising edge of the output clock
(C and C, or K and K when in single clock mode, 167-MHz
device). In order to maintain the internal logic, each Read
access must be allowed to complete. Each Read access
consists of four 18-bit data words and takes 2 clock cycles to
complete. Therefore, Read accesses to the device can not be
initiated on two consecutive K clock rises. The internal logic of
the device will ignore the second Read request. Read
accesses can be initiated on every other K clock rise. Doing
so will pipeline the data flow such that data is transferred out
of the device on every rising edge of the output clocks (C and
C, or K and K when in single clock mode).
When the read port is deselected, the CY7C1305BV25 will first
complete the pending read transactions. Synchronous internal
circuitry will automatically three-state the outputs following the
next rising edge of the positive output clock (C). This will allow
for a seamless transition between devices without the
insertion of wait states in a depth expanded memory.
Write Operations
Write operations are initiated by asserting WPS active at the
rising edge of the positive input clock (K). On the following K
clock rise the data presented to D[17:0] is latched and stored
into the lower 18-bit Write Data register provided BWS[1:0] are
both asserted active. On the subsequent rising edge of the
negative input clock (K) the information presented to D[17:0] is
also stored into the Write Data Register provided BWS[1:0] are
both asserted active. This process continues for one more
cycle until four 18-bit words (a total of 72 bits) of data are
stored in the SRAM. The 72 bits of data are then written into
the memory array at the specified location. Therefore, Write
accesses to the device can not be initiated on two consecutive
K clock rises. The internal logic of the device will ignore the
second Write request. Write accesses can be initiated on
every other rising edge of the positive clock (K). Doing so will
pipeline the data flow such that 18-bits of data can be transferred into the device on every rising edge of the input clocks
(K and K).
Page 5 of 21
PRELIMINARY
CY7C1305BV25
CY7C1307BV25
When deselected, the write port will ignore all inputs after the
pending Write operations have been completed.
includes forwarding data from a Write cycle that was initiated
on the previous K clock rise.
Byte Write Operations
Byte Write operations are supported by the CY7C1305BV25.
A write operation is initiated as described in the Write
Operation section above. The bytes that are written are determined by BWS0 and BWS1, which are sampled with each set
of 18-bit data word. Asserting the appropriate Byte Write
Select input during the data portion of a write will allow the data
being presented to be latched and written into the device.
Deasserting the Byte Write Select input during the data portion
of a write will allow the data stored in the device for that byte
to remain unaltered. This feature can be used to simplify
Read/Modify/Write operations to a Byte Write operation.
Read and Write accesses must be scheduled such that one
transaction is initiated on any clock cycle. If both ports are
selected on the same K clock rise, the arbitration depends on
the previous state of the SRAM. If both ports were deselected,
the Read port will take priority. If a Read was initiated on the
previous cycle, the Write port will assume priority (since Read
operations can not be initiated on consecutive cycles). If a
Write was initiated on the previous cycle, the Read port will
assume priority (since Write operations can not be initiated on
consecutive cycles). Therefore, asserting both port selects
active from a deselected state will result in alternating
Read/Write operations being initiated, with the first access
being a Read.
Single Clock Mode
Depth Expansion
The CY7C1305BV25 can be used with a single clock that
controls both the input and output registers. In this mode the
device will recognize only a single pair of input clocks (K and
K) that control both the input and output registers. This
operation is identical to the operation if the device had zero
skew between the K/K and C/C clocks. All timing parameters
remain the same in this mode. To use this mode of operation,
the user must tie C and C HIGH at power-on. This function is
a strap option and not alterable during device operation.
The CY7C1305BV25 has a Port Select input for each port.
This allows for easy depth expansion. Both Port Selects are
sampled on the rising edge of the positive input clock only (K).
Each port select input can deselect the specified port.
Deselecting a port will not affect the other port. All pending
transactions (Read and Write) will be completed prior to the
device being deselected.
Concurrent Transactions
An external resistor, RQ, must be connected between the ZQ
pin on the SRAM and VSS to allow the SRAM to adjust its
output driver impedance. The value of RQ must be 5X the
value of the intended line impedance driven by the SRAM, The
allowable range of RQ to guarantee impedance matching with
a tolerance of ±15% is between 175Ω and 350Ω, with
VDDQ=1.5V. The output impedance is adjusted every 1024
cycles upon power-up to account for drifts in supply voltage
and temperature.
The Read and Write ports on the CY7C1305BV25 operate
completely independently of one another. Since each port
latches the address inputs on different clock edges, the user
can Read or Write to any location, regardless of the transaction on the other port. If the ports access the same location
at the same time, the SRAM will deliver the most recent information associated with the specified address location. This
Programmable Impedance
Application Example[1]
Note:
1. The above application shows four QDR-I being used.
Document #: 38-05630 Rev. **
Page 6 of 21
CY7C1305BV25
CY7C1307BV25
PRELIMINARY
Truth Table[2, 3, 4, 5, 6, 7, 8, 9]
Operation
K
RPS
Write Cycle:
Load address on the rising edge
of K; wait one cycle; input write
data on two consecutive K and K
rising edges.
L-H
H[8]
Read Cycle:
Load address on the rising edge
of K; wait one cycle; read data on
two consecutive C and C rising
edges.
L-H
NOP: No operation
Standby: Clock stopped
WPS
DQ
DQ
DQ
DQ
[9]
D(A+00)at
K(t+1) ↑
D(A+01) at
K(t+1) ↑
D(A+10) at
K(t+2) ↑
D(A+11) at
K(t+2) ↑
L[9]
X
Q(A+00) at
C(t+1) ↑
Q(A+01) at
C(t+1) ↑
Q(A+10) at
C(t+2) ↑
Q(A+11) at
C(t+2) ↑
L-H
H
H
D=X
Q = High-Z
D=X
Q = High-Z
D=X
Q = High-Z
D=X
Q = High-Z
Stopped
X
X
Previous state Previous state Previous
state
L
Previous
state
Write Cycle Descriptions (CY7C1305BV25)[2, 10]
BWS0
BWS1
K
K
Comments
L
L
L-H
–
During the Data portion of a Write sequence, both bytes (D[17:0]) are written into the device.
L
L
–
L-H
During the Data portion of a Write sequence, both bytes (D[17:0]) are written into the device.
L
H
L-H
–
During the Data portion of a Write sequence, only the lower byte (D[8:0]) is written into the
device. D[17:9] will remain unaltered.
L
H
–
L-H
During the Data portion of a Write sequence, only the lower byte (D[8:0]) is written into the
device. D[17:9] will remain unaltered.
H
L
L-H
–
During the Data portion of a Write sequence, only the upper byte (D[17:9]) is written into
the device. D[8:0] will remain unaltered.
H
L
–
L-H
During the Data portion of a Write sequence, only the upper byte (D[17:9]) is written into
the device. D[8:0] will remain unaltered.
H
H
L-H
–
No data is written into the device during this portion of a Write operation.
H
H
–
L-H
No data is written into the device during this portion of a Write operation.
Notes:
2. X = Don't Care, H = Logic HIGH, L = Logic LOW, ↑represents rising edge.
3. Device will power-up deselected and the outputs in a three-state condition.
4. “A” represents address location latched by the devices when transaction was initiated. A+00, A+01, A+10 and A+11 represents the address sequence in the burst.
5. “t” represents the cycle at which a read/write operation is started. t+1 and t+2 are the first and second clock cycles respectively succeeding the “t” clock cycle.
6. Data inputs are registered at K and K rising edges. Data outputs are delivered on C and C rising edges, except when in single clock mode.
7. It is recommended that K = K and C = C when clock is stopped. This is not essential, but permits most rapid restart by overcoming transmission line charging
symmetrically.
8. If this signal was LOW to initiate the previous cycle, this signal becomes a don’t care for this operation.
9. This signal was HIGH on previous K clock rise. Initiating consecutive Read or Write operations on consecutive K clock rises is not permitted. The device will
ignore the second Read request.
Document #: 38-05630 Rev. **
Page 7 of 21
PRELIMINARY
CY7C1305BV25
CY7C1307BV25
Write Cycle Descriptions (CY7C1307BV25)[2, 10]
BWS0
BWS1
BWS2
BWS3
K
K
Comments
L
L
L
L
L-H
–
During the Data portion of a Write sequence, all four bytes
(D[35:0]) are written into the device.
L
L
L
L
–
L-H
During the Data portion of a Write sequence, all four bytes
(D[35:0]) are written into the device.
L
H
H
H
L-H
–
During the Data portion of a Write sequence, only the lower
byte (D[8:0]) is written into the device. D[35:9] will remain
unaltered.
L
H
H
H
–
L-H
During the Data portion of a Write sequence, only the lower
byte (D[8:0]) is written into the device. D[35:9] will remain
unaltered.
H
L
H
H
L-H
–
During the Data portion of a Write sequence, only the byte
(D[17:9]) is written into the device. D[8:0] and D[35:18] will
remain unaltered.
H
L
H
H
–
L-H
During the Data portion of a Write sequence, only the byte
(D[17:9]) is written into the device. D[8:0] and D[35:18] will
remain unaltered.
H
H
L
H
L-H
–
During the Data portion of a Write sequence, only the byte
(D[26:18]) is written into the device. D[17:0] and D[35:27] will
remain unaltered.
H
H
L
H
–
L-H
During the Data portion of a Write sequence, only the byte
(D[26:18]) is written into the device. D[17:0] and D[35:27] will
remain unaltered.
H
H
H
L
L-H
H
H
H
L
–
L-H
During the Data portion of a Write sequence, only the byte
(D[35:27]) is written into the device. D[26:0] will remain
unaltered.
H
H
H
H
L-H
–
No data is written into the device during this portion of a Write
operation.
H
H
H
H
–
L-H
No data is written into the device during this portion of a write
operation.
During the Data portion of a Write sequence, only the byte
(D[35:27]) is written into the device. D[26:0] will remain
unaltered.
Note:
10. Assumes a Write cycle was initiated per the Write Port Cycle Description Truth Table. BWS0 and BWS1 in the case of CY7C1305BV25 and BWS2 and BWS3 in
the case of CY7C1307BV25 can be altered on different portions of a Write cycle, as long as the set-up and hold requirements are achieved.
Document #: 38-05630 Rev. **
Page 8 of 21
CY7C1305BV25
CY7C1307BV25
PRELIMINARY
Maximum Ratings
Current into Outputs (LOW)......................................... 20 mA
(Above which the useful life may be impaired.)
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Storage Temperature ................................. –65°C to +150°C
Latch-Up Current ................................................... > 200 mA
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Operating Range
Supply Voltage on VDD Relative to GND........ –0.5V to +3.6V
DC Applied to Outputs in High-Z State –0.5V to VDDQ + 0.5V
DC Input Voltage[11] ............................ –0.5V to VDDQ + 0.5V
Range
Ambient
Temperature (TA)
VDD[12]
VDDQ[12]
0°C to +70°C
2.5 ± 0.1V
1.4V to 1.9V
Com’l
Electrical Characteristics Over the Operating Range[13]
DC Electrical Characteristics Over the Operating Range
Parameter
Description
Test Conditions
Min.
Typ.
Max.
Unit
2.4
2.5
2.6
V
1.4
1.5
1.9
V
VDDQ/2 + 0.12
V
VDD
Power Supply Voltage
VDDQ
I/O Supply Voltage
VOH
Output HIGH Voltage
Note 14
VDDQ/2 – 0.12
VOL
Output LOW Voltage
Note 15
VDDQ/2 – 0.12
VDDQ/2 + 0.12
V
VOH(LOW)
Output HIGH Voltage
IOH = –0.1 mA, Nominal Impedance
VDDQ – 0.2
VDDQ
V
VOL(LOW)
Output LOW Voltage
IOH = 0.1 mA, Nominal Impedance
VIH
Input HIGH Voltage[11]
Voltage[11, 16]
VIL
Input LOW
IX
Input Load Current
GND ≤ VI ≤ VDDQ
GND ≤ VI ≤ VDDQ, Output Disabled
V
V
–0.3
VREF – 0.1
V
–5
5
µA
5
µA
V
167 MHz
TBD
mA
133 MHz
TBD
mA
100 MHz
TBD
mA
Max. VDD, Both Ports
167 MHz
Deselected,
133 MHz
VIN ≤ VIH or VIN < VIL
f = fMAX = 1/tCYC, Inputs Static 100 MHz
TBD
mA
TBD
mA
TBD
mA
Output Leakage Current
Input Reference Voltage[17] Typical value = 0.75V
IDD
VDD Operating Supply
VDD = Max.,
IOUT = 0 mA,
f = fMAX = 1/tCYC
Automatic
Power-Down
Current
0.2
VDDQ + 0.3
0.95
IOZ
VREF
ISB1
VSS
VREF + 0.1
–5
0.68
0.75
AC Input Requirements Over the Operating Range
Min.
Typ.
Max.
Unit
VIH
Parameter
Input High (Logic 1) Voltage
Description
Test Conditions
VREF + 0.2
–
–
V
VIL
Input Low (Logic 0) Voltage
–
–
VREF – 0.2
V
Thermal Resistance[18]
Parameter
Description
ΘJA
Thermal Resistance
(Junction to Ambient)
ΘJC
Thermal Resistance
(Junction to Case)
Test Conditions
165 FBGA
Package
Unit
16.7
°C/W
2.5
°C/W
Test conditions follow standard test methods and procedures for measuring thermal impedance, per
EIA/JESD51.
Notes:
11. Overshoot: VIH(AC) < VDDQ +0.85V (Pulse width less than tCYC/2), Undershoot: VIL(AC) > –1.5V (Pulse width less than tCYC/2).
12. Power-up: Assumes a linear ramp from 0V to VDD(min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD.
13. All Voltage referenced to Ground.
14. Output are impedance controlled. IOH = –(VDDQ/2)/(RQ/5) for values of 175Ω <= RQ <= 350Ω.
15. Output are impedance controlled. IOL = (VDDQ/2)/(RQ/5) for values of 175Ω <= RQ <= 350Ω.
16. This spec is for all inputs except C and C Clock. For C and C Clock, VIL(Max.) = VREF – 0.2V.
17. VREF (Min.) = 0.68V or 0.46VDDQ, whichever is larger, VREF (Max.) = 0.95V or 0.54VDDQ, whichever is smaller.
Document #: 38-05630 Rev. **
Page 9 of 21
CY7C1305BV25
CY7C1307BV25
PRELIMINARY
Capacitance[18]
Parameter
Description
CIN
Input Capacitance
CCLK
Clock Input Capacitance
CO
Output Capacitance
Test Conditions
Max.
TA = 25°C, f = 1 MHz,
VDD = 2.5V.
VDDQ = 1.5V
Unit
5
pF
6
pF
7
pF
AC Test Loads and Waveforms
VDDQ/2
VDDQ/2
VREF
VREF
OUTPUT
Z0 = 50Ω
Device
Under
Test
RL = 50Ω
VREF = 0.75V
ZQ
VDDQ/2
R = 50Ω
ALL INPUT PULSES
1.25V
0.75V
OUTPUT
Device
Under ZQ
Test
RQ =
250Ω
5 pF
[18]
0.25V
RQ=
250 Ω
(a)
INCLUDING
JIG AND
SCOPE
(b)
Switching Characteristics Over the Operating Range[19]
Cypress
Parameter
tPower
167 MHz
Consortium
Parameter
[20]
Description
VCC (typical) to the First Access Read or Write
Min.
Max.
133 MHz
Min.
Max.
100 MHz
Min.
Max.
Unit
10
10
10
µs
Cycle Time
tCYC
tKHKH
K Clock and C Clock Cycle Time
6.0
7.5
10.0
ns
tKH
tKHKL
Input Clock (K/K and C/C) HIGH
2.4
3.2
3.5
ns
tKL
tKLKH
Input Clock (K/K and C/C) LOW
2.4
tKHKH
tKHKH
K/K Clock Rise to K/K Clock Rise and C/C to C/C
Rise (rising edge to rising edge)
2.7
3.3
3.4
4.1
4.4
5.4
ns
tKHCH
tKHCH
K/K Clock Rise to C/C Clock Rise (rising edge to
rising edge)
0.0
2.0
0.0
2.5
0.0
3.0
ns
3.2
3.5
ns
Set-up Times
tSA
tSA
Address Set-up to Clock (K and K) Rise
0.7
0.8
1.0
ns
tSC
tSC
Control Set-up to Clock (K and K) Rise (RPS,
WPS, BWS0, BWS1)
0.7
0.8
1.0
ns
tSD
tSD
D[x:0] Set-up to Clock (K and K) Rise
0.7
0.8
1.0
ns
tHA
tHA
Address Hold after Clock (K and K) Rise
0.7
0.8
1.0
ns
tHC
tHC
Control Signals Hold after Clock (K and K) Rise
(RPS, WPS, BWS0, BWS1)
0.7
0.8
1.0
ns
tHD
tHD
D[x:0] Hold after Clock (K and K) Rise
0.7
0.8
1.0
ns
Hold Times
Output Times
tCO
tCHQV
C/C Clock Rise (or K/K in single clock mode) to
Data Valid[21]
2.5
3.0
3.0
ns
Note:
18. Tested initially and after any design or process change that may affect these parameters.
Document #: 38-05630 Rev. **
Page 10 of 21
CY7C1305BV25
CY7C1307BV25
PRELIMINARY
Switching Characteristics Over the Operating Range[19] (continued)
Cypress
Parameter
167 MHz
Consortium
Parameter
Description
tDOH
tCHQX
Data Output Hold after Output C/C Clock Rise
(Active to Active)
tCHZ
tCHZ
Clock (C and C) rise to High-Z (Active to
High-Z)[21, 22]
tCLZ
tCLZ
Clock (C and C) rise to Low-Z[21, 22]
Min.
Max.
1.2
133 MHz
Min.
1.2
2.5
1.2
Max.
100 MHz
Min.
1.2
3.0
1.2
Max.
ns
3.0
1.2
Unit
ns
ns
Notes:
19. Unless otherwise noted, test conditions assume signal transition time of 2V/ns, timing reference levels of 0.75V,VREF = 0.75V, RQ = 250Ω, VDDQ = 1.5V, input
pulse levels of 0.25V to 1.25V, and output loading of the specified IOL/IOH and load capacitance shown in (a) of AC Test Loads.
20. This part has a voltage regulator that steps down the voltage internally; tPower is the time power needs to be supplied above VDD minimum initially before a Read
or Write operation can be initiated.
21. tCHZ, tCLZ, are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured ± 100 mV from steady-state voltage.
22. At any given voltage and temperature tCHZ is less than tCLZ and, tCHZ less than tCO.
Document #: 38-05630 Rev. **
Page 11 of 21
CY7C1305BV25
CY7C1307BV25
PRELIMINARY
Switching Waveforms[23, 24, 25]
NOP
1
READ
2
WRITE
3
READ
4
WRITE
5
NOP
6
7
K
t KL
tKH
t CYC
t KHKH
K
RPS
t SC
t HC
t HC
t SC
WPS
A
A1
A0
t SA
A2
A3
t HD
t HA
t HD
t SD
D
t SD
D10
Q Qx3
Q00
t KHCH
Q01
D11
Q02
D12
Q03
D13
D30
Q20
D31
Q21
Q22
D32
D33
Q23
t CO
t DOH
t CLZ
tCO
tCHZ
t DOH
C
tKHCH
tCYC
tKHKH
tKH
tKL
C
DON’T CARE
UNDEFINED
Notes:
23. Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, i.e., A0+1.
24. Outputs are disabled (High-Z) one clock cycle after a NOP.
25. In this example, if address A2 = A1 then data Q20 = D10 and Q21 = D11. Write data is forwarded immediately as read results.This note applies to the whole diagram.
Document #: 38-05630 Rev. **
Page 12 of 21
PRELIMINARY
IEEE 1149.1 Serial Boundary Scan (JTAG)
These SRAMs incorporate a serial boundary scan test access
port (TAP) in the FBGA package. This part is fully compliant
with IEEE Standard #1149.1-1900. The TAP operates using
JEDEC standard 2.5V I/O logic levels.
Disabling the JTAG Feature
It is possible to operate the SRAM without using the JTAG
feature. To disable the TAP controller, TCK must be tied LOW
(VSS) to prevent clocking of the device. TDI and TMS are internally pulled up and may be unconnected. They may alternately
be connected to VDD through a pull-up resistor. TDO should
be left unconnected. Upon power-up, the device will come up
in a reset state which will not interfere with the operation of the
device.
CY7C1305BV25
CY7C1307BV25
TDI and TDO pins as shown in TAP Controller Block Diagram.
Upon power-up, the instruction register is loaded with the
IDCODE instruction. It is also loaded with the IDCODE
instruction if the controller is placed in a reset state as
described in the previous section.
When the TAP controller is in the Capture IR state, the two
least significant bits are loaded with a binary “01” pattern to
allow for fault isolation of the board level serial test path.
Bypass Register
To save time when serially shifting data through registers, it is
sometimes advantageous to skip certain chips. The bypass
register is a single-bit register that can be placed between TDI
and TDO pins. This allows data to be shifted through the
SRAM with minimal delay. The bypass register is set LOW
(VSS) when the BYPASS instruction is executed.
Test Access Port—Test Clock
Boundary Scan Register
The test clock is used only with the TAP controller. All inputs
are captured on the rising edge of TCK. All outputs are driven
from the falling edge of TCK.
The boundary scan register is connected to all of the input and
output pins on the SRAM. Several no connect (NC) pins are
also included in the scan register to reserve pins for higher
density devices.
Test Mode Select
The TMS input is used to give commands to the TAP controller
and is sampled on the rising edge of TCK. It is allowable to
leave this pin unconnected if the TAP is not used. The pin is
pulled up internally, resulting in a logic HIGH level.
Test Data-In (TDI)
The TDI pin is used to serially input information into the
registers and can be connected to the input of any of the
registers. The register between TDI and TDO is chosen by the
instruction that is loaded into the TAP instruction register. For
information on loading the instruction register, see the TAP
Controller State Diagram. TDI is internally pulled up and can
be unconnected if the TAP is unused in an application. TDI is
connected to the most significant bit (MSB) on any register.
Test Data-Out (TDO)
The TDO output pin is used to serially clock data-out from the
registers. The output is active depending upon the current
state of the TAP state machine (see Instruction codes). The
output changes on the falling edge of TCK. TDO is connected
to the least significant bit (LSB) of any register.
Performing a TAP Reset
A Reset is performed by forcing TMS HIGH (VDD) for five rising
edges of TCK. This RESET does not affect the operation of
the SRAM and may be performed while the SRAM is
operating. At power-up, the TAP is reset internally to ensure
that TDO comes up in a high-Z state.
TAP Registers
Registers are connected between the TDI and TDO pins and
allow data to be scanned into and out of the SRAM test
circuitry. Only one register can be selected at a time through
the instruction registers. Data is serially loaded into the TDI pin
on the rising edge of TCK. Data is output on the TDO pin on
the falling edge of TCK.
Instruction Register
Three-bit instructions can be serially loaded into the instruction
register. This register is loaded when it is placed between the
Document #: 38-05630 Rev. **
The boundary scan register is loaded with the contents of the
RAM Input and Output ring when the TAP controller is in the
Capture-DR state and is then placed between the TDI and
TDO pins when the controller is moved to the Shift-DR state.
The EXTEST, SAMPLE/PRELOAD and SAMPLE Z instructions can be used to capture the contents of the Input and
Output ring.
The Boundary Scan Order tables show the order in which the
bits are connected. Each bit corresponds to one of the bumps
on the SRAM package. The MSB of the register is connected
to TDI, and the LSB is connected to TDO.
Identification (ID) Register
The ID register is loaded with a vendor-specific, 32-bit code
during the Capture-DR state when the IDCODE command is
loaded in the instruction register. The IDCODE is hardwired
into the SRAM and can be shifted out when the TAP controller
is in the Shift-DR state. The ID register has a vendor code and
other information described in the Identification Register
Definitions table.
TAP Instruction Set
Eight different instructions are possible with the three-bit
instruction register. All combinations are listed in the
Instruction Code table. Three of these instructions are listed
as RESERVED and should not be used. The other five instructions are described in detail below.
Instructions are loaded into the TAP controller during the
Shift-IR state when the instruction register is placed between
TDI and TDO. During this state, instructions are shifted
through the instruction register through the TDI and TDO pins.
To execute the instruction once it is shifted in, the TAP
controller needs to be moved into the Update-IR state.
IDCODE
The IDCODE instruction causes a vendor-specific, 32-bit code
to be loaded into the instruction register. It also places the
instruction register between the TDI and TDO pins and allows
the IDCODE to be shifted out of the device when the TAP
controller enters the Shift-DR state. The IDCODE instruction
Page 13 of 21
PRELIMINARY
is loaded into the instruction register upon power-up or
whenever the TAP controller is given a test logic reset state.
SAMPLE Z
The SAMPLE Z instruction causes the boundary scan register
to be connected between the TDI and TDO pins when the TAP
controller is in a Shift-DR state. The SAMPLE Z command puts
the output bus into a High-Z state until the next command is
given during the “Update IR” state.
SAMPLE/PRELOAD
SAMPLE/PRELOAD is a 1149.1 mandatory instruction. When
the SAMPLE/PRELOAD instructions are loaded into the
instruction register and the TAP controller is in the Capture-DR
state, a snapshot of data on the inputs and output pins is
captured in the boundary scan register.
The user must be aware that the TAP controller clock can only
operate at a frequency up to 10 MHz, while the SRAM clock
operates more than an order of magnitude faster. Because
there is a large difference in the clock frequencies, it is
possible that during the Capture-DR state, an input or output
will undergo a transition. The TAP may then try to capture a
signal while in transition (metastable state). This will not harm
the device, but there is no guarantee as to the value that will
be captured. Repeatable results may not be possible.
To guarantee that the boundary scan register will capture the
correct value of a signal, the SRAM signal must be stabilized
long enough to meet the TAP controller's capture set-up plus
hold times (tCS and tCH). The SRAM clock input might not be
captured correctly if there is no way in a design to stop (or
slow) the clock during a SAMPLE/PRELOAD instruction. If this
is an issue, it is still possible to capture all other signals and
simply ignore the value of the CK and CK captured in the
boundary scan register.
Once the data is captured, it is possible to shift out the data by
putting the TAP into the Shift-DR state. This places the
boundary scan register between the TDI and TDO pins.
PRELOAD allows an initial data pattern to be placed at the
latched parallel outputs of the boundary scan register cells
prior to the selection of another boundary scan test operation.
CY7C1305BV25
CY7C1307BV25
The shifting of data for the SAMPLE and PRELOAD phases
can occur concurrently when required—that is, while data
captured is shifted out, the preloaded data can be shifted in.
BYPASS
When the BYPASS instruction is loaded in the instruction
register and the TAP is placed in a Shift-DR state, the bypass
register is placed between the TDI and TDO pins. The
advantage of the BYPASS instruction is that it shortens the
boundary scan path when multiple devices are connected
together on a board.
EXTEST
The EXTEST instruction enables the preloaded data to be
driven out through the system output pins. This instruction also
selects the boundary scan register to be connected for serial
access between the TDI and TDO in the shift-DR controller
state.
EXTEST Output Bus Three-state
IEEE Standard 1149.1 mandates that the TAP controller be
able to put the output bus into a three-state mode.
The boundary scan register has a special bit located at bit #47.
When this scan cell, called the “extest output bus three-state”,
is latched into the preload register during the “Update-DR”
state in the TAP controller, it will directly control the state of the
output (Q-bus) pins, when the EXTEST is entered as the
current instruction. When HIGH, it will enable the output
buffers to drive the output bus. When LOW, this bit will place
the output bus into a High-Z condition.
This bit can be set by entering the SAMPLE/PRELOAD or
EXTEST command, and then shifting the desired bit into that
cell, during the “Shift-DR” state. During “Update-DR”, the value
loaded into that shift-register cell will latch into the preload
register. When the EXTEST instruction is entered, this bit will
directly control the output Q-bus pins. Note that this bit is
pre-set HIGH to enable the output when the device is
powered-up, and also when the TAP controller is in the
“Test-Logic-Reset” state.
Reserved
These instructions are not implemented but are reserved for
future use. Do not use these instructions.
Document #: 38-05630 Rev. **
Page 14 of 21
CY7C1305BV25
CY7C1307BV25
PRELIMINARY
TAP Controller State Diagram[26]
1
TEST-LOGIC
RESET
0
0
TEST-LOGIC/
IDLE
1
1
1
SELECT
DR-SCAN
SELECT
IR-SCAN
0
0
1
1
CAPTURE-DR
CAPTURE-IR
0
0
0
SHIFT-DR
0
SHIFT-IR
1
1
1
EXIT1-DR
1
EXIT1-IR
0
0
PAUSE-DR
0
0
PAUSE-IR
1
1
0
0
EXIT2-DR
EXIT2-IR
1
1
UPDATE-DR
1
0
UPDATE-IR
1
0
Note:
26. The 0/1 next to each state represents the value at TMS at the rising edge of TCK.
Document #: 38-05630 Rev. **
Page 15 of 21
CY7C1305BV25
CY7C1307BV25
PRELIMINARY
TAP Controller Block Diagram
0
Bypass Register
Selection
Circuitry
TDI
2
1
0
1
0
Selection
Circuitry
Instruction Register
31 30 29
.
.
2
TDO
Identification Register
106 .
.
.
.
2
1
0
Boundary Scan Register
TCK
TMS
TAP Controller
TAP Electrical Characteristics Over the Operating Range[11, 13, 27]
Parameter
Description
Test Conditions
Min.
IOH = −2.0 mA
1.7
Output HIGH Voltage
IOH = −100 µA
2.1
Output LOW Voltage
IOL = 2.0 mA
VOL2
Output LOW Voltage
IOL = 100 µA
VIH
Input HIGH Voltage
VIL
Input LOW Voltage
IX
Input and Output Load Current
VOH1
Output HIGH Voltage
VOH2
VOL1
GND ≤ VI ≤ VDDQ
Max.
Unit
V
V
0.7
V
0.2
V
1.7
VDD + 0.3
V
–0.3
0.7
V
−5
5
µA
TAP AC Switching Characteristics Over the Operating Range [28, 29]
Parameter
Description
Min.
Max.
Unit
10
MHz
tTCYC
TCK Clock Cycle Time
tTF
TCK Clock Frequency
tTH
TCK Clock HIGH
40
ns
tTL
TCK Clock LOW
40
ns
tTMSS
TMS Set-up to TCK Clock Rise
10
ns
tTDIS
TDI Set-up to TCK Clock Rise
10
ns
tCS
Capture Set-up to TCK Rise
10
ns
tTMSH
TMS Hold after TCK Clock Rise
10
ns
tTDIH
TDI Hold after Clock Rise
10
ns
tCH
Capture Hold after Clock Rise
10
ns
100
ns
Set-up Times
Hold Times
Notes:
27. These characteristic pertain to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in the Electrical Characteristics Table.
28. Parameters tCS and tCH refer to the set-up and hold time requirements of latching data from the boundary scan register.
29. Test conditions are specified using the load in TAP AC test conditions. tR/tF = 1 ns.
Document #: 38-05630 Rev. **
Page 16 of 21
CY7C1305BV25
CY7C1307BV25
PRELIMINARY
TAP AC Switching Characteristics Over the Operating Range (continued)[28, 29]
Parameter
Description
Min.
Max.
Unit
Output Times
tTDOV
TCK Clock LOW to TDO Valid
tTDOX
TCK Clock LOW to TDO Invalid
20
ns
0
ns
TAP Timing and Test Conditions[29]
1.25V
50Ω
ALL INPUT PULSES
TDO
2.5V
Z0 =50Ω
(a)
1.25V
CL = 20 pF
0V
GND
tTL
tTH
Test Clock
TCK
tTCYC
tTMSS
tTMSH
Test Mode Select
TMS
tTDIS
tTDIH
Test Data-In
TDI
Test Data-Out
TDO
tTDOX
tTDOV
Identification Register Definitions
Value
Instruction Field
Revision Number (31:29)
Cypress Device ID (28:12)
CY7C1305BV25
CY7C1307BV25
000
000
01011010011010101 01011010011100101 Defines the type of SRAM.
Cypress JEDEC ID (11:1)
00000110100
00000110100
ID Register Presence (0)
1
1
Document #: 38-05630 Rev. **
Description
Version number.
Allows unique identification of SRAM vendor.
Indicate the presence of an ID register.
Page 17 of 21
CY7C1305BV25
CY7C1307BV25
PRELIMINARY
Scan Register Sizes
Register Name
Bit Size
Instruction
3
Bypass
1
ID
32
Boundary Scan
107
Instruction Codes
Instruction
Code
Description
EXTEST
000
Captures the Input/Output ring contents.
IDCODE
001
Loads the ID register with the vendor ID code and places the register between TDI and TDO.
This operation does not affect SRAM operation.
SAMPLE Z
010
Captures the Input/Output contents. Places the boundary scan register between TDI and
TDO. Forces all SRAM output drivers to a High-Z state.
RESERVED
011
Do Not Use: This instruction is reserved for future use.
SAMPLE/PRELOAD
100
Captures the Input/Output ring contents. Places the boundary scan register between TDI
and TDO. Does not affect the SRAM operation.
RESERVED
101
Do Not Use: This instruction is reserved for future use.
RESERVED
110
Do Not Use: This instruction is reserved for future use.
BYPASS
111
Places the bypass register between TDI and TDO. This operation does not affect SRAM
operation.
Boundary Scan Order
Boundary Scan Order (continued)
Bit #
Bump ID
Bit #
Bump ID
0
6R
24
9K
1
6P
25
10J
2
6N
26
11J
3
7P
27
11H
4
7N
28
10G
5
7R
29
9G
6
8R
30
11F
7
8P
31
11G
8
9R
32
9F
9
11P
33
10F
10
10P
34
11E
11
10N
35
10E
12
9P
36
10D
13
10M
37
9E
14
11N
38
10C
15
9M
39
11D
16
9N
40
9C
17
11L
41
9D
18
11M
42
11B
19
9L
43
11C
20
10L
44
9B
21
11K
45
10B
22
10K
46
11A
23
9J
47
Internal
Document #: 38-05630 Rev. **
Page 18 of 21
CY7C1305BV25
CY7C1307BV25
PRELIMINARY
Boundary Scan Order (continued)
Boundary Scan Order (continued)
Bit #
Bump ID
Bit #
Bump ID
48
9A
92
1L
49
8B
93
3N
50
7C
94
3M
51
6C
95
1N
52
8A
96
2M
53
7A
97
3P
54
7B
98
2N
55
6B
99
2P
56
6A
100
1P
57
5B
101
3R
58
5A
102
4R
59
4A
103
4P
60
5C
104
5P
61
4B
105
5N
62
3A
106
5R
63
1H
64
1A
65
2B
66
3B
67
1C
68
1B
69
3D
70
3C
71
1D
72
2C
73
3E
74
2D
75
2E
76
1E
77
2F
78
3F
79
1G
80
1F
81
3G
82
2G
83
1J
84
2J
85
3K
86
3J
87
2K
88
1K
89
2L
90
3L
91
1M
Document #: 38-05630 Rev. **
Page 19 of 21
CY7C1305BV25
CY7C1307BV25
PRELIMINARY
Ordering Information
Speed
(MHz)
167
Ordering Code
CY7C1305BV25-167BZC
Package
Name
Operating
Range
Package Type
BB165D
13 x 15 x 1.4 mm FBGA
BB165D
13 x 15 x 1.4 mm FBGA
BB165D
13 x 15 x 1.4 mm FBGA
Commercial
CY7C1307BV25-167BZC
133
CY7C1305BV25-133BZC
CY7C1307BV25-133BZC
100
CY7C1305BV25-100BZC
CY7C1307BV25-100BZC
Package Diagram
165 FBGA 13 x 15 x 1.40 mm BB165D
51-85180-**
Quad Data Rate™ SRAM and QDR™ SRAM comprise a new family of products developed by Cypress, IDT, NEC and Samsung.
All products and company names mentioned in this document may be the trademarks of their respective holders.
Document #: 38-05630 Rev. **
Page 20 of 21
© Cypress Semiconductor Corporation, 2004. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be
used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its
products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
PRELIMINARY
CY7C1305BV25
CY7C1307BV25
Document History Page
Document Title: CY7C1305BV25/CY7C1307BV25 18-Mbit Burst of Four Pipelined SRAM with QDR™ Architecture
Document Number: 38-05630
REV.
ECN NO.
Issue Date
Orig. of
Change
**
253049
See ECN
SYT
Document #: 38-05630 Rev. **
Description of Change
New Data Sheet
Page 21 of 21