DMN2501UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS ADVANCE INFORMATION 20V Features and Benefits RDS(on) max ID TA = +25°C 0.4Ω @ VGS = 4.5V 1.5A 0.5 Ω @ VGS = 2.5V 1.3A 0.7 Ω @ VGS = 1.8V 1.1A Low On-Resistance Very Low Gate Threshold Voltage VGS(TH), 1.0V Max. Low Input Capacitance Fast Switching Speed Ultra-Small Surfaced Mount Package Ultra-Low Package Profile, 0.4mm Maximum Package Height ESD Protected Gate Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. DC-DC Converters Power Management Functions Case: X2-DFN1006-3 Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – NiPdAu over Copper Leadframe; Solderable per MIL-STD-202, Method 208 e4 Weight: 0.001 grams (Approximate) Drain X2-DFN1006-3 Body Diode S Gate D G ESD PROTECTED Bottom View Top View Internal Schematic Gate Protection Diode Source Equivalent Circuit Ordering Information (Note 4) Part Number DMN2501UFB4-7 DMN2501UFB4-7B Notes: Case X2-DFN1006-3 X2-DFN1006-3 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green" and Lead-Free. 3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. DMN2501UFB4 Document number: DS35824 Rev. 5 - 2 1 of 7 www.diodes.com May 2015 © Diodes Incorporated DMN2501UFB4 Marking Information From date code 1527 (YYWW), this changes to: TN Top View Bar Denotes Gate and Source Side Top View Dot Denotes Drain Side TN TN TN TN TN DMN2501UFB4-7 TN TN Top View Bar Denotes Gate and Source Side TN = Part Marking Code TN TN DMN2501UFB4-7B TN ADVANCE INFORMATION TN Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 4.5V Steady State t<10s Continuous Drain Current (Note 6) VGS = 4.5V Steady State t<10s TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C Pulsed Drain Current (10μs pulse, duty cycle = 1%) Maximum Body Diode continuous Current ID Value 20 ±8 1.0 0.8 ID 1.2 0.9 A ID 1.5 1.2 A 1.8 1.4 6 1 ID IDM IS Units V V A A A A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Symbol TA = +25°C TA = +70°C Steady State t<10s TA = +25°C TA = +70°C Steady State t<10s Operating and Storage Temperature Range Notes: PD RJA PD RJA TJ, TSTG Value 0.5 0.3 251 188 1.2 0.7 110 82 -55 to +150 Units W °C/W W °C/W °C 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. DMN2501UFB4 Document number: DS35824 Rev. 5 - 2 2 of 7 www.diodes.com May 2015 © Diodes Incorporated DMN2501UFB4 ADVANCE INFORMATION Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 - - 100 ±1 V nA A VGS = 0V, ID = 250μA VDS = 20V, VGS = 0V VGS = ±6V, VDS = 0V VGS(th) 0.5 RDS (ON) - |Yfs| VSD - 1.0 400 500 700 1.2 V Static Drain-Source On-Resistance 0.76 170 200 260 1.4 0.7 VDS = VGS, ID = 250μA VGS = 4.5V, ID = 600mA VGS = 2.5V, ID = 500mA VGS = 1.8V, ID = 350mA VDS = 10V, ID = 400mA VGS = 0V, IS = 150mA Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf - 82 12 10 83 1.1 2.0 0.14 0.19 6.6 6.4 40.4 17.3 - Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: mΩ S V pF pF pF Ω nC nC nC nC ns ns ns ns Test Condition VDS =16V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz VDS = 10V, ID = 250mA VDD = 10V, VGS = 4.5V, RL = 47Ω, RG = 10Ω, ID = 200mA 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMN2501UFB4 Document number: DS35824 Rev. 5 - 2 3 of 7 www.diodes.com May 2015 © Diodes Incorporated DMN2501UFB4 20 2.0 1.8 VGS = 8.0V 16 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 1.6 VGS = 2.5V 1.4 VGS = 2.0V 1.2 VGS = 1.5V 1.0 0.8 0.6 12 TA = 150°C 8 T A = 125°C TA = 85°C 4 0.4 T A = 25°C 0.2 TA = -55°C VGS = 1.2V 0 0 0.5 1.0 1.5 2.0 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 3.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.50 0.45 0.40 0.35 0.30 0.25 VGS = 1.8V 0.20 VGS = 2.5V 0.15 0.10 VGS = 8.0V VGS = 4.5V 0.05 0 0 0.4 0.8 1.2 1.6 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 2.0 0.4 0.8 1.2 1.6 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 2.0 1.0 0.9 0.8 ID = 350mA 0.7 ID = 500mA ID = 600mA 0.6 0.5 0.4 0.3 0.2 0.1 0 1 2 3 4 5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 4 Typical Drain-Source On-Resistance vs. Gate-Source Voltage 6 1.8 0.30 0.25 0 0 VGS = 4.5V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () ADVANCE INFORMATION VDS = 5.0V VGS = 4.5V TA = 150°C 0.20 TA = 125°C TA = 85°C 0.15 TA = 25°C 0.10 TA = -55°C 0.05 0 0 4 8 12 16 ID, DRAIN CURRENT (A) Fig. 5 Typical On-Resistance vs. Drain Current and Temperature DMN2501UFB4 Document number: DS35824 Rev. 5 - 2 20 4 of 7 www.diodes.com 1.6 VGS = 4.5V ID = 1.0A 1.4 1.2 VGS = 8.0V ID = 1A 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 6 On-Resistance Variation with Temperature May 2015 © Diodes Incorporated VGS(th), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 1.2 0.25 VGS = 4.5V ID = 1.0A 0.20 0.15 VGS = 8.0V ID = 1A 0.10 0.05 1.0 ID = 1mA 0.8 ID = 250µA 0.6 0.4 0.2 0 -50 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Fig. 7 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Fig. 8 Gate Threshold Variation vs. Ambient Temperature 1,000 2.0 CT, JUNCTION CAPACITANCE (pF) 1.8 IS, SOURCE CURRENT (A) 1.6 1.4 1.2 TA = 150°C 1.0 TA = 125°C 0.8 TA = 85°C 0.6 TA = 25°C 0.4 TA = -55°C 100 Ciss Coss 10 Crss 0.2 0 f = 1MHz 0 1 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 9 Diode Forward Voltage vs. Current 0 2 4 6 8 10 12 14 16 18 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Junction Capacitance 100 8 7 VDS = 10V ID = 250mA 6 ID, DRAIN CURRENT (A) VGS GATE THRESHOLD VOLTAGE (V) ADVANCE INFORMATION DMN2501UFB4 5 4 3 2 PW = 10µs RDS(on) Limited 1 DC PW = 10s PW = 1s 0.1 T J(max) = 150°C PW = 100ms TA = 25°C VGS = 8V Single Pulse DUT on 1 * MRP Board 1 0 0 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate Charge DMN2501UFB4 Document number: DS35824 Rev. 5 - 2 0.01 0.01 5 of 7 www.diodes.com PW = 10ms PW = 1ms PW = 100µs 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 SOA, Safe Operation Area 100 May 2015 © Diodes Incorporated DMN2501UFB4 r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 RJA(t) = r(t) * RJA RJA = 251°C/W Duty Cycle, D = t1/ t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Fig. 13 Transient Thermal Resistance 10 100 1,000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A A1 Seating Plane D b Pin #1 ID e E b2 X2-DFN1006-3 Dim Min Max Typ A 0.40 A1 0.00 0.05 0.03 b 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.05 1.00 E 0.55 0.65 0.60 e 0.35 L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 0.40 z 0.02 0.08 0.05 All Dimensions in mm z L3 L2 L1 Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C Y Dimensions C G1 G2 X X1 Y Y1 Y1 G2 X G1 Value (in mm) 0.70 0.30 0.20 0.40 1.10 0.25 0.70 X1 DMN2501UFB4 Document number: DS35824 Rev. 5 - 2 6 of 7 www.diodes.com May 2015 © Diodes Incorporated DMN2501UFB4 ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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