TI BQ24150YFFR Fully integrated switch-mode one-cell li-ion charger with full usb compliance and usb-otg support Datasheet

bq24150
bq24151
www.ti.com ...................................................................................................................................................................................................... SLUS824 – JUNE 2008
Fully Integrated Switch-Mode One-Cell Li-Ion Charger with Full USB Compliance and
USB-OTG Support
FEATURES
1
• Charge Faster than Linear Chargers
• High-Accuracy Voltage and Current Regulation
– Input Current Regulation Accuracy: ±5%
(100 mA and 500 mA)
– Charge Voltage Regulation Accuracy:
±0.5% (25°C), ±1% (0°C to 125°C)
– Charge Current Regulation Accuracy: ±5%
• High-Efficiency Mini-USB/AC Battery Charger
for Single-Cell Li-Ion and Li-Polymer Battery
Packs
• 20-V Absolute Maximum Input Voltage Rating
• 6-V Maximum Operating Input Voltage
• Built-In Input Current Sensing and Limiting
• Integrated Power FETs for Up To 1.25-A
Charge Rate
• Programmable Charge Parameters through
I2C™ Interface (up to 3.4 Mbps):
– Input Current
– Fast-Charge/Termination Current
– Charge Voltage (3.5 V to 4.44 V)
– Safety Timer
– Termination Enable
• Synchronous Fixed-Frequency PWM
Controller Operating at 3 MHz With 0% to
99.5% Duty Cycle
• Automatic High Impedance Mode for Low
Power Consumption
• Safety Timer with Reset Control
• Reverse Leakage Protection Prevents Battery
Drainage
• Thermal Regulation and Protection
• Input/Output Overvoltage Protection
• Status Output for Charging and Faults
• USB Friendly Boot-Up Sequence
• Automatic Charging – bq24150
• Automatic High Impedance Mode – bq24151
• Boost Mode Operation for USB OTG:
– Input Voltage Range (from Battery): 2.5 V to
4.5 V
2
•
– Output Voltage for VBUS: 5.05 V
1.976 x 1.924mm 20-Pin WCSP Package
APPLICATIONS
•
•
•
Mobile and Smart Phones
MP3 Players
Handheld Devices
DESCRIPTION
The bq24150/1 is a compact, flexible, high-efficiency,
USB-friendly switch-mode charge management
device for single-cell Li-ion and Li-polymer batteries
used in a wide range of portable applications. The
charge parameters can be programmed through an
I2C interface. The bq24150/1 integrates a
synchronous PWM controller, power MOSFETs, input
current sensing, high-accuracy current and voltage
regulation, and charge termination, into a small
WCSP package.
The bq24150/1 charges the battery in three phases:
conditioning, constant current and constant voltage.
The input current is automatically limited to the value
set by the host. Charge is terminated based on
user-selectable minimum current level. A safety timer
with reset control provides a safety backup for I2C
interface. During normal operation, bq24150/1
automatically restarts the charge cycle if the battery
voltage falls below an internal threshold and
automatically enters sleep mode or high impedance
mode when the input supply is removed. The charge
status is reported to the host using the I2C interface.
Typical Application Circuit
LO 1.0 mH
VBUS
C IN
VBUS
bq24150/1
PMID
C IN
VAUX
10 kW
SCL
SDA
STAT
OTG
10 kW
10 kW
HOST
BOOT
10nF
PACK +
0.1 mF
PGND
4.7 mF
10 kW
CO
1 0mF
C BOOT
U1
1 mF
R SNS
SW
+
CSIN
I2C BUS
SCL
SDA
STAT
OTG
PACK -
CSOUT
AUXPWR
VREF
C AUXPWR
C VREF
1mF
1mF
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
I2C is a trademark of Philips Electronics.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2008, Texas Instruments Incorporated
bq24150
bq24151
SLUS824 – JUNE 2008 ...................................................................................................................................................................................................... www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
DESCRIPTION CONTINUED
During the charging process, the bq24150/1 monitors its junction temperature (TJ) and reduces the charge
current once TJ increases to approximately 125°C. To support USB OTG device, bq24150/1 provides VBUS
(approximately 5.05 V) by boosting the battery voltage. The bq24150/1 is available in 20-pin WCSP package.
WCSP PACKAGE
(Top View)
A1
A2
A3
A4
VBUS
VBUS
BOOT
SCL
B3
B4
PMID
B1
PMID
B2
PMID
SDA
C1
C2
C3
C4
SW
SW
SW
STAT
D1
D2
D3
D4
PGND
PGND
PGND
OTG
E1
E2
E3
E4
CSIN
AUX
PWR
VREF
CSOUT
TERMINAL FUNCTIONS
TERMINAL
I/O
DESCRIPTION
NAME
NO.
CSOUT
E4
I
Battery voltage and current sense input. Bypass it with a ceramic capacitor (minimum 0.1 µF) to
PGND if there are long inductive leads to battery.
VBUS
A1, A2
I
Charger input voltage. Bypass it with a 1-µF ceramic capacitor from VBUS to PGND.
PMID
B1, B2, B3
O
Connection point between reverse blocking MOSFET and high-side switching MOSFET. Bypass it
with a minimum of 3.3-µF capacitor from PMID to PGND.
SW
C1, C2, C3
O
Internal switch to output inductor connection.
BOOT
A3
O
Boot-strapped capacitor for the high-side MOSFET gate driver. Connect a 10-nF ceramic capacitor
(voltage rating above 10 V) from BOOT pin to SW pin.
PGND
D1, D2, D3
CSIN
E1
I
Charge current-sense input. Battery current is sensed via the voltage drop across an external sense
resistor. A 0.1-µF ceramic capacitor to PGND is required.
SCL
A4
I
I2C interface clock. Open drain output, connect a 10-kΩ pullup resistor
SDA
B4
I/O
I2C interface data. Open drain output, connect a 10-kΩ pullup resistor
STAT
C4
O
Charge status pin. Pull low when charge in progress. Open drain for other conditions. During faults, a
128-µS pulse is sent out. STAT pin can be disabled by the EN_STAT bit in control register. STAT can
be used to drive a LED or communicate with a host processor.
VREF
E3
O
Internal bias regulator voltage. Connect a 1-µF ceramic capacitor from this output to PGND. External
load on VREF is not allowed.
AUXPWR
E2
I
Auxiliary power supply, connected to the battery pack to provide power in high-impedance mode.
Bypass it with a 1-µF ceramic capacitor from this pin to PGND.
I
Boost mode enable control or input current limiting selection pin. When OTG is in active status,
bq24150/1 is forced to operate in boost mode. It has higher priority over I2C control and can be
disabled through control register. The logic voltage level at OTG active status can also be controlled.
At POR, the OTG pin is default to be used as the input current limiting selection pin. When OTG =
High, Iin – limit = 500mA and when OTG = Low, Iin – limit = 100mA, see the Control Register for
details.
OTG
2
D4
Power ground
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Copyright © 2008, Texas Instruments Incorporated
Product Folder Link(s): bq24150 bq24151
bq24150
bq24151
www.ti.com ...................................................................................................................................................................................................... SLUS824 – JUNE 2008
PACKAGE DIMENSIONS
PACKAGE DEVICES
bq24150, bq24151
D
E
2.00 ± 0.05mm
1.94 ± 0.05mm
ORDERING INFORMATION (1)
PART NO.
bq24150YFFR
bq24150YFFT
bq24151YFFR
bq24151YFFT
(1)
MARKING
MEDIUM
QUANTITY
Automatic Charging
(VBUS Recycled, VBAT <
VLOWV, 32 Minutes Mode)
Part Number Bit
PN0, Control
Register 03H, bit 3
bq24150
Tape and
Reel
3000
Yes
1
bq24150
Tape and
Reel
250
Yes
1
bq24151
Tape and
Reel
3000
No
0
bq24151
Tape and
Reel
250
No
0
For the most current package information, see the Package Option Addendum at the end of this document, or see the TI website at
www.ti.com.
DISSIPATION RATINGS (1)
RθJA
RθJC
TA ≤ 25°C
POWER RATING
DERATING FACTOR
TA > 25°C
185°C/W (2)
1.57°C/W
0.54 W
0.0054 W/°C
PACKAGE
WSCP-20
(1)
(2)
(1)
Maximum power dissipation is a function of TJ(max), RθJA and TA. The maximum allowable power dissipation at any allowable ambient
temperature is PD = [TJ(max)-TA] / RθJA.
For PCB board with only top trace layer. For PCB board with four layers (top trace layer, buried ground layer, buried signal layer and
bottom layer), RθJA drops to 75.96°C/W
ABSOLUTE MAXIMUM RATINGS (1)
over operating free-air temperature range (unless otherwise noted)
VALUE
UNIT
VSS
Supply voltage range (with
respect to PGND)
VBUS
–0.3 to 20
V
VI
Input voltage range (with
respect to and PGND)
SCL, SDA, OTG, CSIN, CSOUT, AUXPWR
–0.3 to 7
V
PMID, STAT
–0.3 to 20
V
VO
Output voltage range (with
respect to and PGND)
6.5
V
–0.7 to 20
V
VREF
SW, BOOT
Voltage difference between CSIN and CSOUT inputs (V(CSIN) -V(CSOUT) )
±7
V
Output sink
STAT
10
mA
IO
Output Current (average)
SW
1.25
A
TA
Operating free-air temperature range
–40 to 85
°C
TJ
Junction temperature
–40 to 150
°C
Tstg
Storage temperature
–65 to 150
°C
ESD
Rating
Human body model at VBUS, PMID, STAT (2) (3)
800
V
(1)
(2)
(3)
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage
values are with respect to the network ground terminal unless otherwise noted.
The human body model is a 100-pF capacitor discharged through a 1.5-kΩ resistor into each pin.
Other pins pass 2 kV for human body model.
All voltages are with respect to GND if not specified. Currents are positive into, negative out of the specified terminal.
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RECOMMENDED OPERATING CONDITIONS
MIN
NOM
MAX
UNIT
(1)
VBUS
Supply voltage, VBUS
4
6
TJ
Operating junction temperature range
0
+125
(1)
V
°C
The inherent switching noise voltage spikes should not exceed the absolute maximum rating on either the BOOST or SW pins. A tight
layout minimizes switching noise.
ELECTRICAL CHARACTERISTICS
Circuit of Figure 1, VBUS = 5 V, HZ_MODE = 0, OPA_MODE = 0 (charger mode operation), TJ = 0°C to 125°C, TJ = 25°C for
typical values (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
INPUT CURRENTS
VBUS > VBUS(min), PWM switching
10
VBUS > VBUS(min), PWM NOT switching
I(VBUS)
Ilkg
VBUS supply current control
mA
5
0°C < TJ < 85°C, VBUS = 5 V, HZ_MODE = 1,
V(AUXPWR) > V(LOWV), SCL, SDA, OTG = 0 V or
1.8 V
20
µA
0°C < TJ < 85°C, VBUS = 5 V, HZ_MODE = 1,
V(AUXPWR) < V(LOWV), 32S mode, SCL, SDA, OTG
= 0 V or 1.8 V
35
µA
Leakage current from battery to
VBUS pin
0°C < TJ < 85°C, V(AUXPWR) = 4.2 V, High
Impedance mode
5
µA
Battery discharge current in High
Impedance mode, (CSIN,
CSOUT, AUXPWR, SW pins)
0°C < TJ < 85°C, V(AUXPWR) = 4.2 V, High
Impedance mode
SCL, SDA, OTG = 0 V or 1.8 V
20
µA
3.5
4.44
V
–0.5%
0.5%
VOLTAGE REGULATION
V(OREG)
Output charge voltage
Voltage regulation accuracy
Operating in voltage regulation, programmable
TA = 25°C
±1%
CURRENT REGULATION (FAST CHARGE)
IO(CHARGE)
Output charge current
Regulation accuracy for charge
current across R(SNS)
V(IREG) = IO(CHARGE) × R(SNS)
V(LOWV) ≤ V(AUXPWR) < V(OREG), VBUS > V(SLP),
R(SNS) = 68 mΩ Programmable
550
1250
20 mV ≤ V(IREG) ≤ 40 mV
–5%
5%
40 mV < V(IREG)
–3%
3%
mA
WEAK BATTERY DETECTION
V(LOWV)
Weak battery voltage threshold
Programmable
Weak battery voltage accuracy
Hysteresis for V(LOWV)
Battery voltage falling
Deglitch time for weak battery
threshold
Rising voltage, 2-mV over drive, tRISE = 100 ns
3.4
3.7
–5%
5%
V
100
mV
30
ms
OTG PIN LOGIC LEVEL
VIL
Input low threshold level
VIH
Input high threshold level
0.4
1.3
V
V
CHARGE TERMINATION DETECTION
I(TERM)
Termination charge current
V(AUXPWR) > V(OREG) – V(RCH),
VBUS > V(SLP), R(SNS) = 68 mΩ Programmable
Deglitch time for charge
termination
Both rising and falling, 2-mV overdrive, tRISE, tFALL
= 100 ns
Voltage regulation accuracy for
termination current across R(SNS)
V(IREG_TERM) = IO(TERM) × R(SNS)
3 mV ≤ V(IREG_TERM) < 20 mV
–25%
25%
20 mV ≤ V(IREG_TERM) ≤ 40 mV
–5%
5%
50
400
30
mA
ms
INPUT POWER SOURCE DETECTION
Input voltage lower limit
VIN(min)
tINT
4
Input power source detection
Deglitch time for VBUS rising
above VIN(min)
Rising voltage, 2-mV overdrive, tRISE = 100 ns
Hysteresis for VIN(min)
Input voltage rising
Detection Interval
Input power source detection
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3.6
3.8
4
30
100
200
2
V
ms
mV
S
Copyright © 2008, Texas Instruments Incorporated
Product Folder Link(s): bq24150 bq24151
bq24150
bq24151
www.ti.com ...................................................................................................................................................................................................... SLUS824 – JUNE 2008
ELECTRICAL CHARACTERISTICS (continued)
Circuit of Figure 1, VBUS = 5 V, HZ_MODE = 0, OPA_MODE = 0 (charger mode operation), TJ = 0°C to 125°C, TJ = 25°C for
typical values (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
INPUT CURRENT LIMITING
IIN
Input current limiting threshold
USB charge mode
IIN = 100 mA
88
93
98
IIN = 500 mA
450
475
500
mA
VREF BIAS REGULATOR
Vref
Internal bias regulator voltage
VBUS >VIN(min) or V(AUXPWR) > V(BAT)min,
I(VREF) = 1 mA, C(VREF) = 1 µF
2
Vref output short current limit
Voltage from BOOT pin to SW
pin
6.5
30
During charge or boost operation
V
mA
6.5
V
BATTERY RECHARGE THRESHOLD
V(RCH)
Recharge threshold voltage
Below V(OREG)
Deglitch time
V(AUXPWR) decreasing below threshold,
tFALL = 100 ns, 10-mV overdrive
Low-level output saturation
voltage, STAT
IO = 10 mA, sink current
High-level leakage current for
STAT
Voltage on STAT pin is 5 V
100
120
150
130
mV
ms
STAT OUTPUTS
VOL(STAT)
0.4
V
1
µA
0.4
V
0.4
V
1
µA
I2C BUS LOGIC LEVELS AND TIMING CHARACTERISTICS
VOL
Output low threshold level
VIL
Input low threshold level
VIH
Input high threshold level
I(BIAS)
Input bias current
f(SCL)
SCL clock frequency
IO = 10 mA, sink current
1.2
V
V(pull-up) = 1.8 V, SDA and SCL
3.4
MHz
BATTERY DETECTION
I(DETECT)
Battery detection current before
charge done (sink current) (1)
Begins after termination detected,
V(AUXPWR) ≤ V(OREG)
Battery detection time
–0.45
mA
262
ms
SLEEP COMPARATOR
V(SLP)
V(SLP_EXIT)
Sleep-mode entry threshold,
VBUS - VAUXPWR
2.3 V ≤ V(AUXPWR) ≤ V(OREG), VBUS falling
Sleep-mode exit hysteresis
2.3 V ≤ V(AUXPWR) ≤ V(OREG)
Deglitch time for VBUS rising
above V(SLP) + V(SLP_EXIT)
Rising voltage, 2-mV overdrive, tRISE = 100 ns
+0.0
+0.04
+0.1
V
40
100
160
mV
30
ms
UNDERVOLTAGE LOCKOUT
UVLO
IC active threshold voltage
VBUS rising
3.05
3.3
3.55
UVLO(HYS)
IC active hysteresis
VBUS falling from above UVLO
120
150
Internal top reverse blocking
MOSFET on-resistance
IIN(LIMIT) = 500 mA, Measured from VBUS to
PMID
180
250
Internal top N-channel Switching
MOSFET on-resistance
Measured from PMID to SW
120
250
Internal bottom N-channel
MOSFET on-resistance
Measured from SW to PGND
150
200
V
mV
PWM
f(OSC)
Oscillator frequency
3
Frequency accuracy
D(MAX)
Maximum duty cycle
D(MIN)
Minimum duty cycle
Synchronous mode to
non-synchronous mode transition
current threshold (2)
(1)
(2)
–10%
mΩ
MHz
10%
99.5%
0
Low side MOSFET cycle by cycle current sensing
100
mA
Negative charge current means the charge current flows from the battery to charger (discharging battery).
Bottom N-channel MOSFET always turns on for ≈60 ns and then turns off if current is too low.
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ELECTRICAL CHARACTERISTICS (continued)
Circuit of Figure 1, VBUS = 5 V, HZ_MODE = 0, OPA_MODE = 0 (charger mode operation), TJ = 0°C to 125°C, TJ = 25°C for
typical values (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
BOOST MODE OPERATION FOR VBUS (OPA_MODE = 1, HZ_MODE = 0)
Boost output voltage (to pin
VBUS)
2.5V < V(AUXPWR) < 4.5 V, Open loop
5.05
Boost output voltage accuracy
Including line and load regulation
±3%
I(BO)
Maximum output current for
boost
V(BUS_B) = 5.05 V, 2.5 V < V(AUXPWR) < 4.5 V
I(BLIMIT)
Cycle by cycle current limit for
boost
V(BUS_B) = 5.05 V, 2.5 V < V(AUXPWR) < 4.5 V
VBUS(OVP)
Overvoltage protection threshold
for boost (VBUS pin)
Threshold over VBUS to turn off converter during
boost
VBUS(OVP) hysteresis
VBUS falling from above VBUS(OVP)
Maximum battery voltage for
boost (CSOUT pin)
V(CSOUT) rising edge during boost
V(BAT)MAX hysteresis
V(CSOUT) falling from above VBATMAX
200
Minimum battery voltage for
boost (AUXPWR pin)
During boosting
2.5
Before boost starts
2.9
V(BUS_B)
V(BAT)MAX
V(BAT)MIN
V
200
mA
1
5.8
6
A
6.2
125
4.75
Boost output resistance at
high-impedance mode (From
VBUS to PGND)
HZ_MODE = 1
165
Input VBUS OVP threshold
voltage
Threshold over VBUS to turn off converter during
charge
6.3
V(OVP_IN) hysteresis
VBUS falling from above V(OVP_IN)
Battery OVP threshold voltage
V(CSOUT) threshold over V(OREG) to turn off charger
during charge
V(OVP) hysteresis
Lower limit for V(CSOUT) falling from above V(OVP)
Cycle-by-cycle current limit for
charge
Charge mode operation
1.5
Short-circuit voltage threshold
V(AUXPWR) falling
1.9
V(SHORT) hysteresis
V(AUXPWR) rising from below V(SHORT)
I(SHORT)
Short-circuit current
V(AUXPWR) ≤ V(SHORT)
T(SHTDWN)
Thermal trip
4.9
V
mV
5.05
V
mV
V
3.05
V
kΩ
PROTECTION
V(OVP-IN)
V(OVP)
I(LIMIT)
V(SHORT)
140
110
117
121 %V(ORE
G)
2.3
3
2
2.1
100
5
10
V
mV
11
Thermal hysteresis
10
Thermal regulation threshold (3)
Charge current begins to reduce
T(32S)
Time constant for the 32 second
timer
32 Second mode
6
6.7
A
V
mV
15
mA
165
T(CF)
(3)
6.5
°C
120
12
32
s
Verified by design
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TYPICAL APPLICATION CIRCUITS
VBUS = 5 V, I(IN_LIMIT) = 500 mA, I(CHARGE) = 750 mA, VBAT = 3.5 V to 4.44 V (adjustable), Safety Timer = 32
minutes or 32 seconds.
LO 1.0 mH
V BUS
VBUS
C IN
bq24150 /1
C IN 4.7 mF
68 mW
C BOOT
U1
1 mF
R SNS
SW
V BAT
CO
10 mF
10 nF
PACK +
BOOT
PMID
CCSIN
PGND
VAUX
+
0.1 mF
CSIN
10 kW
10 kW 10 kW 10 kW
I
2C BUS
SDA
STAT
OTG
PACK -
CSOUT
SCL
SCL
SDA
STAT
AUXPWR
VREF
OTG
CAUXPWR
C VREF
1 mF
10 kW
1 mF
HOST
Figure 1. I2C Controlled 1-Cell Charger Application Circuit
VBUS = 5 V, I(IN_LIMIT) = 500 mA, VOUT = 3.5 V to 4.44V (adjustable), Safety Timer = 32 minutes or 32 seconds.
LO 1.0 mH
VBUS
VBUS
CIN
bq24150/1
CIN 4.7 mF
PMID
10 kW
SCL
SDA
STAT
2
10 kW 10 kW 10 kW I C BUS
OTG
10 kW
VOUT
CO
10 mF
BOOT
CCSIN 0.1 mF
VSYS
CSIN
SCL
SDA
STAT
OTG
HostControlled
Switch
10nF
PGND
VAUX
68 mW
CBOOT
U1
1 mF
RSNS
SW
PACK +
+
CSOUT
AUXPWR
VREF
CAUXPWR
C VREF
1 mF
CCSOUT
0.1 mF
PACK -
1 mF
HOST
Figure 2. I2C Controlled 1-Cell Pre-Regulator Application
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TYPICAL CHARACTERISTICS
Using circuit shown in Figure 1, TA = 25°C, unless otherwise specified.
ADAPTER INSERTION
BATTERY INSERTION/REMOVAL
VBAT
2 V/div
VBUS
2 V/div
Vbus =5 V, Iin_limit = 500 mA,
32S Mode
VSW
5 V/div
VSW
5 V/div
Vbus = 0–5 V, Vbat = 3.5 V Charge mode
IBAT
0.5 A/div
IBAT
0.5 A/div
500 mS/div
1S/div
Figure 3.
Figure 4.
PWM CHARGING WAVEFORMS
POOR SOURCE DETECTION
VBUS
2 V/div
VSW
2 V/div
VSW
5 V/div
IL
0.5 A/div
Vbus = 5 V, Vbat = 2.6 V, Voreg = 4.2 V, Ichg = 1250 mA
IBUS
0.1 A/div
2 mS/div
100 nS/div
VBUS
5 V/div
Vbus = 5 V @ 10 mA, Iin_limit = 100 mA,
Vbat = 3.2 V, Ichg = 550 mA
Figure 5.
Figure 6.
BATTERY DETECTION AT POWER UP
CYCLE BY CYCLE CURRENT LIMIT IN CHARGE MODE
VIN = 0-5 V, No Battery,
COUT = 100 mF, RLOAD = 5 kW
VSW
2 V/div
VBAT
1 V/div
IL
0.5 A/div
OTG
5 V/div
Vbus = 5 V, Vbat = 3.6 V Charge mode
operation
IBAT
50 mA/div
2 mS/div
500 mS/div
Figure 7.
8
Figure 8.
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TYPICAL CHARACTERISTICS (continued)
INPUT CURRENT CONTROL
CHARGER EFFICIENCY
92
Vbus = 5 V, Iin_limit = 100/500 mA,
(OTG Control, 32 Minute Mode),
VBUS = 5 V
Vbat = 4 V
2
Iin_limit = 100 mA (I C Control, 32 Second Mode)
90
Vbat = 3.6 V
OTG
5 V/div
32 Minute
Mode
32 Second
Mode
IBUS
0.2 A/div
Efficiency - %
88
86
84
Vbat = 3 V
82
0.5 S/div
80
0
100 200 300 400 500 600 700 800 900 10001100 1200 1300
Charge Current - mA
Figure 9.
Figure 10.
BOOST WAVEFORM (PWM MODE)
BOOST WAVEFORM (PFM MODE)
VBUS 100 mV/div, 5.06 V Offset
VBUS 10 mV/div, 5.08 V Offset
VBAT 10 mV/div, 3.52 V Offset
VBAT 100 mV/div, 3.5 V Offset
VSW
2 V/div
VSW
2 V/div
IL
0.2 A/div
IL
0.2 A/div
VBAT = 3.5 V, VBUS = 5.06 V, IBUS = 42 mA
VBAT = 3.5 V, VBUS = 5.07 V, IBUS = 215 mA
100 nS/div
5 mS/div
Figure 11.
Figure 12.
VBUS OVERLOAD WAVEFORMS (BOOST MODE)
VBUS
2 V/div
VBAT = 3.5 V, VBUS = 5.05 V, IBUS = 42 mA
LOAD STEP UP RESPONSE (BOOST MODE)
VBUS
100 mV/div,
5.06 V Offset
VBAT = 3.85 V, VBUS = 5.07 V, IBUS = 0-215 mA
VPMID
200 mV/div,
5.02 V Offset
VBAT
0.2 V/div,
3.8 V Offset
VSW
5 V/div
VSW
5 V/div
IBUS
0.2 A/div
IBAT
0.1 A/div
5 mS/div
100 mS/div
Figure 13.
Figure 14.
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TYPICAL CHARACTERISTICS (continued)
LOAD STEP DOWN RESPONSE (BOOST MODE)
CYCLE BY CYCLE CURRENT LIMITING IN BOOST MODE
VBUS
100 mV/div,
5.06 V Offset
VBAT
0.2 A/div,
3.8 V Offset
Vbat = 3.6 V, Vbus = 4.11 V, Boost mode
overload operation
VBAT = 3.85 V, VBUS = 5.07 V, IBUS = 215 mA-0
VSW
2 V/div
VSW
5 V/div
IL
0.5 A/div
IBAT
0.1 A/div
100 mS/div
200 nS/div
Figure 15.
Figure 16.
BOOST TO CHARGE MODE TRANSITION (OTG CONTROL)
BOOST EFFICIENCY
95
VBUS
0.5 V/div,
4.5 V Offset
VBAT = 4 V
VBAT = 3.6 V
90
OTG
2 V/div
Efficiency - %
Vbus = 4.5 V, (Charge Mode)/5.1 V (Boost Mode),
Iin_limit = 500 mA, Vbat = 3.4 V, 32S Mode.
VSW
5 V/div
IL
0.5 A/div
85
VBAT = 2.5 V
80
75
0.5 mS/div
70
0
50
100
150
200
Load Current at VBUS - mA
Figure 17.
Figure 18.
LINE REGULATION FOR BOOST
LOAD REGULATION FOR BOOST
5.1
5.1
IBUS = 100 mA
5.09
5.09
IBUS = 200 mA
5.08
5.08
VBAT = 3.6 V
5.07
5.06
5.06
VBUS - V
VBUS - V
5.07
5.05
5.04
VBAT = 4 V
5.05
5.04
IBUS = 50 mA
5.03
5.03
5.02
5.02
5.01
VBAT = 2.5 V
5.01
5
4.99
2.5
5
2.7
2.9
3.1
3.3
3.5
VBAT - V
3.7
3.9
4.1
0
Figure 19.
10
50
100
150
Load Current at VBUS - mA
200
Figure 20.
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FUNCTIONAL BLOCK DIAGRAM (Charge Mode)
PMID
bq24150/1
PMID
PMID
VPMID
NMOS
VBUS
NMOS
SW
SW
SW
VBUS
VBUS
Q2
Q1
VREF1
OSC
Charge
Pump
-
PWM
Controller
CBC
Current
Limiting
Q3
ILIMIT
-
TCF
+
TJ
-
VBUS
+
VOUT
+
+
IIN_LIMIT
NMOS
-
+
-
VBUS UVLO
VUVLO
-
VBUS
+
Poor Input
VBUS
+
VBUS OVP
VOVP_IN
-
CSOUT
VOREG
VCSIN
CSIN
IOCHARGE
PWM_CHG
VREF
REFERNCES
& BIAS
VREF
BOOT
VIN(MIN)
TJ
+
+
VOVP
-
VOREG-VRCH
VOUT
PGND
PGND
VOUT
VCSIN
ITERM
CHARGE CONTROL
,
TIMER and DISPLAY
LOGIC
VBAT
VREF
ISHORT
AUXPWR
VOUT
VBUS
Thermal
Shutdown
-
TSHTDWN
VBAT
VPMID
+
+
-
*
Battery OVP
*
LINEAR _CHG
Sleep
STAT
* Recharge
OTG
Termination
-
+
*
VBAT
+
-
*
VSHORT
-
(I2 C Control)
Decoder
DAC
PGND
SCL
SDA
PWM Charge
Mode
* Signal Deglitched
Figure 21. Function Block Diagram of bq24150/1 in Charge Mode
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FUNCTIONAL BLOCK DIAGRAM (Boost Mode)
PMID
bq24150/1
PMID
VPMID
PMID
NMOS
VBUS
NMOS
SW
SW
SW
VBUS
VBUS
Q2
Q1
VREF1
OSC
Charge
Pump
PWM
Controller
CBC
Current
Limiting
Q3
PFM Mode
VBUS_FB
-
IBO
+
+
+
IBLIMIT
VREF
PWM_BOOST
+
VBUSOVP
-
TJ
+
REFERNCES
& BIAS
VREF
BOOT
VBUS OVP
VREF1
VPMID
Thermal
Shutdown
-
TSHTDWN
CSOUT
CSIN
75mA
VBUS_FB
VBUS
NMOS
VBAT
AUXPWR
PGND
PGND
VOUT
+
VBATMAX
-
VBAT
+
VBATMIN
-
*
Battery OVP
*
CHARGE CONTROL,
TIMER and DISPLAY
LOGIC
STAT
Low Battery
* Signal Deglitched
PGND
OTG
(I2C Control)
Decoder
DAC
SCL
SDA
Figure 22. Function Block Diagram of bq24150/1 in Boost Mode
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OPERATIONAL FLOW CHART
VAUXPWR<VLOWV
and bq24150?
Power Up
VBUS>VUVLO
POR
Load I2C Registers
with Default Value
High Impedance Modeor Host
Controlled Operation Mode
No
Yes
Reset and Start
32-Minute Timer
Disable Charge
/CE=LOW
Charge Configure
Mode
/CE=HIGH
Any Charge State
Disable Charge
Wait Mode
Delay TINT
Indicate Power
not Good
Yes
No
Enable ISHORT
Yes
VAUXPWR<VSHORT?
VBUS<VIN(MIN)?
Indicate Short
Circuit condition
No
32-Minute
Timer Expired?
No
Regulate
Input Current, Charge
Current or Voltage
Yes
Indicate Charge-InProgress
VBUS<VIN(MIN)?
Yes
Yes
Turn Off Charge
Indicate Fault
Yes
/CE=HIGH
No
Turn Off Charge
No
32-Minute
Timer Expired?
Enable IDETECT for
tDETECT
No
VAUXPWR < VOREG VRCH?
Battery Removed
Yes
Reset Charge
Parameters
Wait Mode
Delay TINT
Yes
VAUXPWR<VSHORT?
No
No
32-Minute Timer
Active?
No
Charge Complete
Yes
Termination Enabled
ITERM detected
and VAUXPWR>VOREG-VRCH
?
Indicate DONE
No
Yes
Charge Complete
VAUXPWR < VOREG VRCH?
High Impedance
Mode
Yes
Figure 23. Operational Flow Chart of bq24150/1 in Charge Mode
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DETAILED FUNCTIONAL DESCRIPTION
For a current limited power source, such as a USB host or hub, the high efficiency converter is critical in fully
using the input power capacity and charging the battery. Due to the high efficiency in a wide range of the input
voltage and battery voltage, the switching mode charger is a good choice for high speed charging with less
power loss and better thermal management.
The bq24150/1 is a highly integrated synchronous switch-mode charger with reverse boost function for USB
OTG support, featuring integrated MOSFETs and small external components, targeted at extremely space-limited
portable applications powered by 1-cell Li-Ion or Li-polymer battery pack.
The bq24150/1 usually has three operation modes: charge mode, boost mode, and high impedance mode. In
charge mode, the bq24150/1 supports a precision Li-ion or Li-polymer charging system for single-cell
applications. In boost mode, bq24150/1 boosts the battery voltage to VBUS for powering attached OTG devices.
In high impedance mode, the bq24150/1 stops charging or boosting and operates in a mode with low current
from VBUS or battery, to effectively reduce the power consumption when the portable device in standby mode.
Through the proper control, bq24150/1 can achieve the smooth transition among different operation modes.
CHARGE MODE OPERATION
Charge Profile
In charge mode, bq24150/1 has four control loops to regulate input current, charge current, charge voltage and
device junction temperature, as shown in Figure 21. During the charging process, all four loops are enabled and
the one that is dominant will take over the control. The bq24150/1 supports a precision Li-ion or Li-polymer
charging system for single-cell applications. Figure 24(a) indicates a typical charge profile without input current
regulation loop and it is similar to the traditional CC/CV charge curve, while Figure 24(b) shows a typical charge
profile when input current limiting loop is dominant during the constant current mode, and in this case the charge
current is higher than the input current so the charge process is faster than the linear chargers. For bq24150/1,
the input current limits, the charge current, termination current, and charge voltage are all programmable using
I2C interface.
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Precharge
Phase
Current Regulation
Phase
Voltage Regulation
Phase
Regulation
Voltage
Regulation
Current
Charge Voltage
V SHORT
Charge Current
Termination
I SHORT
Precharge
(Linear Charge)
Precharge
Phase
Fast Charge
(PWM Charge)
(a)
Current Regulation
Phase
Voltage Regulation
Phase
Regulation
voltage
Charge Voltage
VSHORT
Charge Current
Termination
I SHORT
Precharge
(Linear Charge)
Fast Charge
(PWM Charge)
(b)
Figure 24. Typical Charging Profile of bq24150/1 for (a) without Input Current Limit, and (b) with Input
Current Limit
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PWM Controller in Charge Mode
The bq24150/1 provides an integrated, fixed 3 MHz frequency voltage-mode controller with Feed-Forward
function to regulate charge current or voltage. This type of controller is used to help improve line transient
response, thereby, simplifying the compensation network used for both continuous and discontinuous current
conduction operation. The voltage and current loops are internally compensated using a Type-III compensation
scheme that provides enough phase margin for stable operation, allowing the use of small ceramic capacitors
with low ESR. There is a 0.5-V offset on the bottom of the PWM ramp to allow the device to operate between 0%
to 99.5% duty cycles.
The bq24150/1 has two back to back common-drain N-channel MOSFETs at the high side and one N-channel
MOSFET at low side. An input N-MOSFET (Q1) prevents battery discharge when VBUS is lower than
VAUXPWR. The second high-side N-MOSFET (Q2) behaves as the switching control switch (see Figure 21). A
charge pump circuit is used to provide gate drive for Q1, while a boot strap circuit with external boot-strap
capacitor is used to boost up the gate drive voltage for Q2.
Cycle-by-cycle current limit is sensed through the internal sense MOSFETs for Q2 and Q3. The threshold for Q2
is set to a nominal 1.9-A peak current. The low-side MOSFET (Q3) also has a current limit that decides if the
PWM Controller will operate in synchronous or non-synchronous mode. This threshold is set to 100mA and it
turns off the low-side N-channel MOSFET (Q3) before the current reverses, preventing the battery from
discharging. Synchronous operation is used when the current of the low-side MOSFET is greater than 100mA to
minimize power losses.
Battery Charging Process
At the beginning of precharge, while battery voltage is below the V(SHORT) threshold, the bq24150/1 applies a
short-circuit current, I(SHORT), to the battery.
When the battery voltage is above V(SHORT) and below V(OREG), the charge current ramps up to fast charge
current, IO(CHARGE), or a charge current that corresponds to the input current of I(IN_LIMIT). The slew rate for fast
charge current is controlled to minimize the current and voltage over-shoot during transient. Both the input
current limit (default at 100 mA), IIN_LIMIT, and fast charge current, IO(CHARGE), can be set by the host. Once the
battery voltage is close to the regulation voltage, V(OREG), the charge current is tapered down as shown in
Figure 24. The voltage regulation feedback occurs by monitoring the battery-pack voltage between the CSOUT
and PGND pins. bq24150/1 is a fixed single-cell voltage version, with adjustable regulation voltage (3.5 V to 4.44
V) programmed through I2C interface.
The bq24150/1 monitors the charging current during the voltage regulation phase. Once the termination
threshold, ITERM, is detected and the battery voltage is above the recharge threshold, the bq24150/1 terminates
charge. The termination current level is programmable. To disable the charge current termination, the host can
set the charge termination bit (I_Term) of charge control register to 0, see the I2C section for details.
A
•
•
•
new charge cycle is initiated when one of the following conditions is detected:
The battery voltage falls below the V(OREG) – V(RCH) threshold.
VBUS Power-on reset (POR), if battery voltage is below the V(LOWV) threshold (bq24150 only).
CE bit toggle or RESET bit is set (host controlled)
Safety Timer in Charge Mode
At the beginning of charging process, the bq24150/1 starts a 32-minute timer (T32min) that can be stopped by
any write-action performed by host through I2C interface. Once the 32-minute timer is stopped, a 32-second timer
(T32sec) is automatically started. The 32-second timer can be reset by host using I2C interface. Writing "1" to
reset bit of TMR_RST in control register resets the 32-second timer and TMR_RST is automatically set to "0"
after the 32-second timer is reset. If the 32-second timer expires, the charge is terminated and charge
parameters are reset to default values. Then the 32-minute timer starts and the charge resumes.
During normal charging process, the bq24150/1 is normally in 32-second mode with host control, and 32-minute
mode without host control using I2C interface. The process repeats until the battery is fully charged. If the
32-minute timer expires, bq24150/1 turns off the charger and enunciates FAULT on the STATx bits of status
register. This function prevents battery over charge if the host fails to reset the safety timer. The safety timer flow
chart is shown in Figure 25. Fault condition is cleared by POR and fault status bits can only be updated after the
status bits are read out by the host.
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Charge Start
Start T32min
Timer
Reset Charge
Parameters
Yes
T32sec Expired?
Start T32sec
Stop T32min
No
No
Yes
Charge
T32min Active?
Any I2C WriteAction?
Yes
No
T32min
Expired?
No
Host Should Reset
T32sec Timer
Yes
Timer Fault
(a)
Charge Start
(From Host Control)
T32sec Expired?
Yes
Timer Fault
Stop Charge
No
Charge
Host Should Reset
T32sec Timer
(b)
Figure 25. Timer Flow Chart for (a) bq24150 and (b) bq24151 in Charge Mode
USB Friendly Boot-Up Sequence
At power on reset (POR) of VBUS, if the battery voltage is above the weak battery threshold, V(LOWV), bq24150
operates in a mode dictated by the I2C control registers. If the battery voltage is below V(LOWV) and the host
control through I2C interface is lost (32 minute mode), the bq24150 resets all I2C registers with default values
and enable the charger with an input current limit dictated by the OTG pin voltage level until the host programs
the I2C registers. During this period, the input current limit is 100 mA when the voltage level of OTG pin is low;
while the input current limit is 500 mA when the voltage level of OTG pin is high. This feature can revive the
deeply discharged cell. The charge process continues even the battery is charged to the regulation voltage
(default at 3.54 V) since termination is disabled by default. In another case, if the battery voltage is below
V(LOWV), but the host control using I2C interface is available (32 second mode), the bq24150 operates in a mode
dictated by control registers. However, at POR of VBUS, bq24151 goes to high impedance mode even the
battery voltage is below V(LOWV) and no host control through I2C interface is available. That is the major
difference between bq24150 and bq24151.
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Input Current Limiting
To maximize the charge rate of bq24150/1 without overloading the USB port, the input current for bq24150/1 can
be limited to 100mA or 500mA which is programmed in the control register or OTG pin. Once the input current
reaches the input current limiting threshold, the charge current is reduced to keep the input current from
exceeding the programmed threshold. For bq14150, the default input current limit is controlled by the OTG pin at
VBUS power on reset when V(AUXPWR) is lower than V(LOWV). The input current sensing resistor and control loop
are integrated into bq24150/1. The input current limit can also be disabled using I2C control, see the definition of
control register (01H) for details.
Thermal Regulation and Protection
To prevent overheating the chip during the charging process, the bq24150/1 monitors the junction temperature,
TJ, of the die and begins to taper down the charge current once TJ reaches the thermal regulation threshold, TCF.
The charge current is reduced to zero when the junction temperature increases approximately 10°C above TCF.
At any state, if TJ exceeds TSHTDWN, bq24150/1 suspends charging. At thermal shutdown mode, PWM is turned
off and all timers are frozen. Charging resumes when TJ falls below TSHTDWN by approximately 10°C.
Input Voltage Protection in Charge Mode
Sleep Mode
The bq24150/1 enters the low-power sleep mode if the voltage on VBUS pin falls below sleep-mode entry
threshold, VAUXPWR + VSLP, and VBUS is still higher than the poor source detection threshold, VIN(min). This
feature prevents draining the battery during the absence of VBUS. During sleep mode, both the reverse blocking
switch Q1 and PWM are turned off.
Input Source Detection
During the charging process, bq24150/1 continuously monitors the input voltage, VBUS. If VBUS falls to the low
input voltage threshold, VIN(min), poor input power source is detected. Under this condition, bq24150/1
terminates the charge process, waits for a delay time of TINT and repeats the charging process, as indicated in
Figure 23. This unique function provides intelligence to bq24150/1 and so prevents USB power bus collapsing
and oscillation when connecting to a suspended USB port, or a USB-OTG device with low current capability.
Input Overvoltage Protection
The bq24150/1 provides a built-in input over-voltage protection to protect the device and other components
against damages if the input voltage (Voltage from VBUS to PGND) goes too high. When an input overvoltage
condition is detected, bq24150/1 turns off the PWM converter, sets fault status bits, and sends out fault pulse in
STAT pin. Once VBUS drops below the input overvoltage exit threshold, the fault is cleared and charge process
resumes.
Battery Protection in Charge Mode
Output Overvoltage Protection
The bq24150/1 provides a built-in overvoltage protection to protect the device and other components against
damage if the battery voltage goes too high, as when the battery is suddenly removed. When an overvoltage
condition is detected, bq24150/1 turns off the PWM converter, sets fault status bits and sends out fault pulse in
STAT pin. Once V(CSOUT) drops to the battery overvoltage exit threshold, the fault is cleared and charge process
back to normal.
Battery Detection During Normal Charging
For applications with removable battery packs, the bq24150/1 provides a battery absent detection scheme to
reliably detect insertion or removal of battery packs.
During normal charging process with host control, once the voltage at the AUXPWR pin is above the battery
recharge threshold, V(OREG) – V(RCH), and the termination charge current is detected, bq24150/1 turns off the
charge and enables a discharge current, I(DETECT), for a period of tDETECT, then checks the battery voltage. If the
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battery voltage is still above recharge threshold, the battery is present and the charge done is detected.
However, if the battery voltage is below battery recharge threshold, the battery is absent. Under this condition,
the charge parameters (such as input current limit) are reset to the default values and charge resumes after a
delay of TINT, as shown in Figure 23. This function ensures that the charge parameters are reset whenever the
battery is replaced.
Battery Detection at Power Up
The bq24150 has a unique battery detection scheme during the start up of the charger. At VBUS power up, if the
timer is in 32-minute mode, the bq24150 starts a 32ms timer when exiting from short circuit mode to PWM
charge mode. If the battery voltage is charged to recharge threshold (V(OREG) – V(RCH)) and the 32ms timer is not
yet expired, the bq2150 determines battery is not present; then stops charging and immediately goes to the high
impedance mode. However, if the 32ms timer is expired when the recharge threshold is reached, the charging
process continues as a normal battery charging process. This unique feature makes bq24150 compatible with
USB charging specifications.
Battery Short Protection
During the normal charging process, if the battery voltage is lower than the short-circuit threshold, V(SHORT), the
charger operates in linear charge mode with a lower charge rate of I(SHORT), as shown in Figure 22.
Charge Status Output, STAT Pin
The STAT pin is used to indicate operation conditions for bq24150/1. STAT is pulled low during charging and
EN_STAT bit in control register (00H) is set to "1". Under other conditions, the STAT pin acts as a high
impedance (open-drain) output. Under fault conditions, a 128-µs pulse is sent out to notify the host. The status of
STAT pin at different operation conditions is summarized in Table 1. The STAT pin can be used to drive an LED
or communicate to the host processor.
Table 1. STAT Pin Summary
Charge State
STAT
Charge in progress and EN_STAT=1
Low
Other normal conditions
Open-drain
Charge mode faults: Timer fault, sleep mode, VBUS 128-µs pulse, then open-drain
or battery overvoltage, poor input source, VBUS
UVLO, no battery, thermal shutdown
Boost mode faults: Timer fault, over load, VBUS or
battery overvoltage, low battery voltage, thermal
shutdown
128-µs pulse, then open-drain
Control Bits in Charge Mode
CE Bit (Charge Mode)
The bit of CE in control register is used to disable or enable the charge process. A low logic level (0) on this bit
enables the charge and a high logic level (1) disables the charge.
RESET Bit
The bit of RESET in control register is used to reset all the charge parameters. Writing '1" to RESET bit resets all
the charge parameters to default values and RESET bit is automatically cleared to zero once the charge
parameters are reset. It is designed for charge parameter reset before charge starts, and it is not recommended
to set the RESET bit when charging or boosting in progress.
OPA_Mode Bit
OPA_MODE is the operation mode control bit. When OPA_MODE = 0, the bq24150/1 charges the related
operation modes if HZ_MODE is set to "0", refer to Table 2 for detail.
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Table 2. Operation Mode Summary
OPA_MODE
HZ_MODE
OPERATION MODE
0
0
Charge (no fault)
Charge configure (fault, Vbus > VUVLO)
High impedance (Vbus < VUVLO)
1
0
Boost (no faults)
Any fault go to charge configure mode
X
1
High impedance
Boost Mode Operation
In 32 second mode, when the OTG pin is in active status or the bit of operation mode (OPA_MODE) at control
register is set to 1, the bq24150/1 operates in boost mode and delivers the power to VBUS from the battery. At
normal boost mode, bq24150/1 converts the battery voltage (2.5 V to 4.5 V) to VBUS-B (about 5.05 V) and
delivers a current as much as I(BO) (approximately 200 mA) to support other USB OTG devices connected to the
USB connector.
PWM Controller in Boost Mode
Similar to charge mode operation, in boost mode, the bq24150/1 provides an integrated, fixed 3 MHz frequency
voltage-mode controller to regulate output voltage at PMID pin (VPMID), as shown in Figure 22. The voltage
control loop is internally compensated using a Type-III compensation scheme that provides enough phase
margin for stable operation with a wide load range and battery voltage range
In boost mode, the input N-MOSFET (Q1) prevents battery discharge when VBUS pin is overloaded.
Cycle-by-cycle current limit is sensed through the internal sense MOSFET for Q3. The threshold for Q3 is set to
a nominal 1-A peak current. The upper-side MOSFET (Q2) also has a current limit that decides if the PWM
Controller will operate in synchronous or non-synchronous mode. This threshold is set to 75 mA and it turns off
the high-side N-channel MOSFET (Q2) before the current reverses, preventing the battery from charging.
Synchronous operation is used when the current of the high-side MOSFET is greater than 75 mA to minimize
power losses.
Boost Start Up
To prevent the inductor saturation and limit the inrush current, a soft-start control is applied during the boost start
up.
PFM Mode at Light Load
In boost mode, the bq2450/1 operates in pulse skipping mode (PFM mode) to reduce the power loss and
improve the converter efficiency at light load condition. During boosting, the PWM converter is turned off once
the inductor current is less than 75 mA; and the PWM is turned back on only when the voltage at PMID pin drops
to about 99.5% of the rated output voltage. A unique pre-set circuit is used to make the smooth transition
between PWM and PFM mode.
Safety Timer in Boost Mode
At the beginning of boost operation, the bq24150/1 starts a 32-second timer that can be reset by host through
I2C interface. Writing "1" to reset bit of TMR_RST in the control register resets the 32-second timer and
TMR_RST is automatically set to "0" after the 32-second timer is reset. To keep in boost mode, the host must
reset the 32-second timer repeatedly. Once the 32-second timer expires, the bq24150/1 turns off the boost
converter, enunciate the fault pulse in STAT pin and set fault status bits in status register. Fault condition is
cleared by POR or host control.
20
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Protection in Boost Mode
Output Overvoltage Protection
The bq24150/1 provides a built-in overvoltage protection to protect the device and other components against
damage if the VBUS voltage goes too high. When an overvoltage condition is detected, the bq24150/1 turns off
the PWM converter, reset OPA_MODE bit to 0, sets fault status bits, and sends out fault pulse in STAT pin.
Once VBUS drops to the normal level, the boost starts after host sets OPA_MODE to "1", or the OTG pin
remains in active status.
Output Overload Protection
The bq24150/1 provides a built-in overload protection to prevent the device and battery from damage when
VBUS is over loaded. Once over load condition is detected, Q1 operates in linear mode to limit the output current
while VPMID keeps in voltage regulation. If the overload condition lasts for more than 30 ms, the overload fault is
detected. When an overload condition is detected, the bq24150/1 turns off the PWM converter, reset
OPA_MODE bit to 0, sets fault status bits, and sends out fault pulse in STAT pin. The boost will not start until the
host clears the fault register.
Battery Voltage Protection
During boosting, when battery voltage is above the battery overvoltage threshold, V(BATMX), or below the minimum
battery voltage threshold, V(BAT)min, the bq24150/1 turns off the PWM converter, reset OPA_MODE bit to 0, sets
fault status bits, and sends out fault pulse in STAT pin. Once battery voltage goes back to the normal level, the
boost starts after host sets OPA_MODE to "1", or the OTG pin remains in active status.
STAT Pin Boost Mode
During normal boosting process, the STAT pin behaves as a high impedance (open-drain) output. Under fault
conditions, a 128-µs pulse is sent out to notify the host.
High Impedance Mode
When control bit of HZ-MODE is set to "1" and the OTG pin is not in active status, the bq24150/1 operates in
high impedance mode, with the impedance in VBUS pin higher than 165 kΩ. In high impedance mode, a crude
32-second timer is enabled when the battery voltage is below V(LOWV) to monitor the host control is available or
not. If the crude 32 second timer expires, the bq24150/1 operates in 32 minute mode and the crude 32 second
timer is disabled. In 32 minute mode, when VBUS is below UVLO, the bq24150/1 operates in high impedance
mode regardless of the setting of the HZ_MODE bit.
Output Inductor and Capacitance Selection Guidelines
The bq24150/1 provides internal loop compensation. With this scheme, the best stability occurs when the LC
resonant frequency, ƒo, is approximately 40 kHz (20 kHz to 80 kHz). Equation 1 is used to calculate the value of
the output inductor, LOUT, and output capacitor, COUT.
fo =
1
2p ´
LOUT ´ COUT
(1)
To reduce the output voltage ripple, a ceramic capacitor with the capacitance between 4.7 µF and 47 µF is
recommended for COUT, see the application section for components selection.
Pre-Regulator Application
Figure 2 shows a typical pre-regulator application that the bq24150/1 operates as a DC/DC converter, with the
termination disabled. The robust internal compensation design ensures the stable operation when the
host-controlled switch is turned off. With the input overvoltage protection, output current regulation and high
efficiency power conversion, the bq24150/1 is an ideal choice for pre-regulator used in pulse charging
applications.
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State Machine Table and State Diagram
Based on the previously-described operation modes, the definitions of all operation states are shown in Table 3
and Table 4, whereas the relationship among different states is shown in Figure 26.
Table 3. State Machine Table 1 of bq24150/1
MODE
POWER DOWN
CHARGE CONFIGURE
SHORT CIRCUIT
PWM CHARGE
VBUS < UVLO
V(AUXPWR) < V(SHORT)
OPA_MODE = 0
HZ_MODE = 0
OTG Inactive
VBUS > UVLO
VBUS < VBUS(MIN)
or
VBUS < V(SLP_ENT)
or
CE = HIGH
OPA_MODE = 0
HZ_MODE = 0
OTGIinactive
VBUS < VBUS(MIN)
VBUS < V(SLP_ENT)
+V(SLP_EXIT)
V(AUXPWR) < V(SHORT)
CE = Low
No Faults
OPA_MODE = 0
HZ_MODE = 0
OTG Inactive
VBUS < VBUS(MIN)
VBUS < V(SLP_ENT)
+V(SLP_EXIT)
V(AUXPWR) < V(SHORT)
CE = Low
No Faults
OUT Condition
VBUS > UVLO
V(AUXPWR) > V(SHORT)
OPA_MODE = 1
or HZ_MODE = 1
or
VBUS > VBUS(MIN)
VBUS > V(SLP_ENT)
+ V(SLP_EXIT)
or VBUS > UVLO
OTG Active
OPA_MODE = 1
or HZ_MODE = 1
VBUS < VBUS(MIN)
VBUS < V(SLP_ENT)
or
V(AUXPWR) < V(SHORT)
CE = HIGH
or Faults
or OTG Active
OPA_MODE = 1
or HZ_MODE = 1
VBUS < VBUS(MIN)
VBUS < V(SLP_ENT)
or
V(AUXPWR) < V(SHORT)
CE = HIGH
or Faults
or OTG Active
I2C
Off
On
On
On
Buck
Off
Off
Off
On
I(SHORT)
Off
Off
On
Off
Boost
Off
Off
Off
Off
Q1
Off
On/Off
On
On
Note
POR when out
IN Condition
Table 4. State Machine Table 2 of bq24150/1
MODE
HIGH IMPEDANCE
BOOST CONFIGURE
BOOST
IN Condition
OPA_MODE = 1
or OTG inactive
VBUS < UVLO, V(AUXPWR) > V(SHORT)
or Boost Configure,
V(AUXPWR) + V(LOWV)
or Boost, V(AUXPWR) +V(BAT)MIN
OPA_MODE = 1
or HZ_MODE = 1
or OTG active
V(AUXPWR) > V(LOWV)
Ready To Start Up
or Faults During Boost
OPA_MODE = 1
HZ_MODE = 0
or OTG active
V(AUXPWR) > V(BAT)MIN
Start Up Finished
or No Faults
OUT Condition
HZ_MODE = 0, OPA_MODE = 0
VBUS > UVLO
or HZ_MODE = 0, OPA_MODE = 1
V(AUXPWR) > V(LOWV)
or V(AUXPWR) +V(SHORT)
or OTG Active
OPA_MODE = 0
OTG Inactive
or HZ_MODE = 1
or V(AUXPWR) > V(LOWV)
Boost Start Up Finished
OPA_MODE = 0
OTG Inactive
or HZ_MODE = 1
or V(AUXPWR) > V(BAT)MIN
or Faults
On
On
On
Off
Off
Off
Off
Off
Off
Off
Off
On
Off
On/Off (1)
On
(1)
Q1 is OFF when VBUS is shorted to ground.
22
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VBUS<VUVLO
VAUXPWR<VSHORT
ANY STATE
VAUXPWR>VPOR
VBUS>POR
POWER DOWN
HZ_MODE=1
or VBUS<VUVLO, VAUXPWR>VSHORT
VBUS>VUVLO
HZ_MODE=0, OPA_MODE=0
HIGH
IMPEDANCE
OPA_MODE=1
HZ_MODE=0
VAUXPWR>VLOWV
HZ_MODE=1
or
VAUXPWR<VBATMIN
VBUS>VUVLO
VAUXPWR<VLOWV
(bq24150)
HZ_MODE=1
Or
VAUXPWR<VLOWV
HZ_MODE=1
CHARGE
CONFIGURE
OPA_MODE=1
HZ_MODE=0
VAUXPWR>VSHORT
or VBUS<VBUS(MIN)
or FAULTS
OPA_MODE=0
BOOST
CONFIGURE
OPA_MODE=1
HZ_MODE=0
VAUXPWR<VSHORT
or VBUS<VBUS(MIN)
or FAULTS
START UP
No FAULTS
PWM CHARGE
BOOST
VAUXPWR<VSHORT
VBUS>VBUS(MIN)
VBUS>VSLP_ENT+VSLP_EXIT
NO FAULTS
SHORT
CIRCUIT
VAUXPWR>VSHORT, VBUS>VBUS(MIN)
VBUS>VSLP_ENT+VSLP_EXIT
NO FAULTS
OPA_MODE=0
or FAULTS
Figure 26. State Diagram for bq24150/1
SERIAL INTERFACE DESCRIPTION
I2C™ is a 2-wire serial interface developed by Philips Semiconductor (see I2C-Bus Specification, Version 2.1,
January 2000). The bus consists of a data line (SDA) and a clock line (SCL) with pull-up structures. When the
bus is idle, both SDA and SCL lines are pulled high. All the I2C compatible devices connect to the I2C bus
through open drain I/O pins, SDA and SCL. A master device, usually a microcontroller or a digital signal
processor, controls the bus. The master is responsible for generating the SCL signal and device addresses. The
master also generates specific conditions that indicate the START and STOP of data transfer. A slave device
receives and/or transmits data on the bus under control of the master device.
The bq24150/1 device works as a slave and supports the following data transfer modes, as defined in the
I2C-Bus™ Specification: standard mode (100 kbps), fast mode (400 kbps), and high-speed mode (up to 3.4 Mbps
in write mode). The interface adds flexibility to the battery charge solution, enabling most functions to be
programmed to new values depending on the instantaneous application requirements. Register contents remain
intact as long as supply voltage remains above 2.2 V (typical).
The data transfer protocol for standard and fast modes is exactly the same; therefore, they are referred to as the
F/S-mode in this document. The protocol for high-speed mode is different from the F/S-mode, and it is referred to
as the HS-mode. The bq24150/1 device only supports 7-bit addressing. The device 7-bit address is defined as
‘1101011’ (6BH).
F/S Mode Protocol
The master initiates data transfer by generating a start condition. The start condition is when a high-to-low
transition occurs on the SDA line while SCL is high, as shown in Figure 27. All I2C-compatible devices should
recognize a start condition.
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DATA
CLK
S
P
START Condition
STOP Condition
Figure 27. START and STOP Condition
The master then generates the SCL pulses, and transmits the 8-bit address and the read/write direction bit R/W
on the SDA line. During all transmissions, the master ensures that data is valid. A valid data condition requires
the SDA line to be stable during the entire high period of the clock pulse (see Figure 28). All devices recognize
the address sent by the master and compare it to their internal fixed addresses. Only the slave device with a
matching address generates an acknowledge (see Figure 28) by pulling the SDA line low during the entire high
period of the ninth SCL cycle. Upon detecting this acknowledge, the master knows that communication link with a
slave has been established.
DATA
CLK
Data Line
Stable;
Data Valid
Change
of Data
Allowed
Figure 28. Bit Transfer on the Serial Interface
The master generates further SCL cycles to either transmit data to the slave (R/W bit 1) or receive data from the
slave (R/W bit 0). In either case, the receiver needs to acknowledge the data sent by the transmitter. So an
acknowledge signal can either be generated by the master or by the slave, depending on which one is the
receiver. the 9-bit valid data sequences consisting of 8-bit data and 1-bit acknowledge can continue as long as
necessary. To signal the end of the data transfer, the master generates a stop condition by pulling the SDA line
from low to high while the SCL line is high (see Figure 30). This releases the bus and stops the communication
link with the addressed slave. All I2C compatible devices must recognize the stop condition. Upon the receipt of a
stop condition, all devices know that the bus is released, and wait for a start condition followed by a matching
address. If a transaction is terminated prematurely, the master needs sending a STOP condition to prevent the
slave I2C logic from remaining in a bad state. Attempting to read data from register addresses not listed in this
section will result in FFh being read out.
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Data Output
by Transmitter
Not Acknowledge
Data Output
by Receiver
Acknowledge
SCL From
Master
1
9
8
2
Clock Pulse for
Acknowledgement
START
Condition
Figure 29. Acknowledge on the I2C Bus™
Recognize START or
REPRATED START
Condition
Recognize STOP or
REPRATED START
Condition
Generate ACKNOWLEDGE
Signal
P
SDA
Acknowledgement
Signal From Slave
MSB
Sr
Address
R/W
SCL
S
or
Sr
ACK
ACK
Sr
or
P
Clock Line Held Low While
Interrupts are Serviced
Figure 30. Bus Protocol
H/S Mode Protocol
When the bus is idle, both SDA and SCL lines are pulled high by the pull-up devices.
The master generates a start condition followed by a valid serial byte containing HS master code '00001XXX'.
This transmission is made in F/S mode at no more than 400 Kbps. No device is allowed to acknowledge the HS
master code, but all devices must recognize it and switch their internal setting to support 3.4-Mbps operation
The master then generates a repeated start condition (a repeated start condition has the same timing as the start
condition). After this repeated start condition, the protocol is the same as F/S mode, except that transmission
speeds up to 3.4 Mbps are allowed. A stop condition ends the HS mode and switches all the internal settings of
the slave devices to support the F/S mode. Instead of using a stop condition, repeated start conditions should be
used to secure the bus in HS mode. If a transaction is terminated prematurely, the master needs sending a
STOP condition to prevent the slave I2C logic from remaining in a bad state.
Attempting to read data from register addresses not listed in this section results in FFh being read out.
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bq24150/1 I2C Update Sequence
The bq24150/1 requires a start condition, a valid I2C address, a register address byte, and a data byte for a
single update. After the receipt of each byte, bq24150/1 device acknowledges by pulling the SDA line low during
the high period of a single clock pulse. A valid I2C address selects the bq24150/1. The bq24150/1 performs an
update on the falling edge of the acknowledge signal that follows the LSB byte.
For the first update, bq24150/1 requires a start condition, a valid I2C address, a register address byte, a data
byte. For all consecutive updates, bq24150/1 needs a register address byte, and a data byte. Once a stop
condition is received, the bq24150/1 releases the I2C bus, and awaits a new start conditions.
S
SLAVE ADDRESS
R/W
A
REGISTER ADDRESS
A
DATA
A/A
P
Data Transferred
(n Bytes + Acknowledge)
‘0’ (Write)
From master to bq24150
A
A
From bq24150/1 to master
S
Sr
P
= Acknowledge (SDA LOW)
= Not acknowledge (SDA
HIGH)
= START condition
= Repeated START condition
= STOP condition
(a) F/S-Mode
F/S-Mode
S
F/S-Mode
HS-Mode
HS-MASTER CODE
A
Sr
SLAVE ADDRESS
R/W
A
REGISTER ADDRESS
A
DATA
A/A
Data Transferred
(n Bytes + Acknowledge)
‘0’ (write)
P
HS-Mode
Continues
Sr
Slave A.
(b) HS- Mode
Figure 31. Data Transfer Format in F/S Mode and H/S Mode
Slave Address Byte
MSB
X
LSB
1
1
0
1
0
1
1
The slave address byte is the first byte received following the START condition from the master device. The
address bits are factory preset to ‘1101011’.
Register Address Byte
MSB
0
LSB
0
0
0
0
D2
D1
D0
Following the successful acknowledgment of the slave address, the bus master will send a byte to the
bq24150/1, which contains the address of the register to be accessed. The bq24150/1 contains five 8-bit
registers accessible via a bidirectional I2C-bus interface. Among them, four internal registers have read and write
access; and one has only read access.
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I2C INTERFACE TIMING CHARACTERISTICS
SYMBOL
fSCL
PARAMETER
SCL clock frequency
tBUF
Bus free time between a STOP and
START condition
tHD; tSTA
Hold time (repeated) START
condition
MAX
UNIT
Standard mode
TEST CONDITIONS
100
kHz
Fast mode
400
kHz
High-speed mode (write operation)
CB - 100 pF max
3.4
High-speed mode (read operation)
CB - 100 pF max
2
High-speed mode (write operation)
CB - 400 pF max
1.7
High-speed mode (read operation)
CB - 400 pF max
2
LOW period of the SCL clock
4.7
Fast mode
1.3
tHIGH
tSU; tSTA
tSU; tDAT
tHD; tDAT
tRCL
HIGH period of the SCL clock
Setup time for a repeated START
condition
Data setup time
Data hold time
Rise time of SCL signal
Rise time of SCL signal after a
repeated START condition and after
an acknowledge bit
High-speed mode
160
Standard mode
4.7
Fast mode
1.3
High-speed mode, CB – 100 pF max
160
High-speed mode, CB – 400 pF max
320
Fall time of SCL signal
ns
µs
ns
µs
4
Fast mode
600
High-speed mode, CB – 100 pF max
60
High-speed mode, CB – 400 pF max
120
ns
µs
Standard mode
4.7
Fast mode
600
High-speed mode
160
Standard mode
250
Fast mode
100
High-speed mode
10
ns
ns
Standard mode
3.45
Fast mode
0.9
High-speed mode, CB – 100 pF max
70
High-speed mode, CB – 400 pF max
150
Standard mode
20+0.1CB
1000
Fast mode
20+0.1CB
300
10
40
High-speed mode, CB – 100 pF max
20
80
Standard mode
20+0.1CB
1000
Fast mode
20+0.1CB
300
10
80
High-speed mode, CB – 100 pF max
High-speed mode, CB – 400 pF max
tFCL
µs
4
600
High-speed mode, CB – 400 pF max
tRCL1
µs
Fast mode
Standard mode
TYP
MHz
Standard mode
Standard mode
tLOW
MIN
20
160
Standard mode
20+0.1CB
300
Fast mode
20+0.1CB
300
High-speed mode, CB – 100 pF max
10
40
High-speed mode, CB – 400 pF max
20
80
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ns
ns
ns
ns
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SYMBOL
PARAMETER
tRDA
TEST CONDITIONS
Rise time of SDA signal
tFDA
Fall time of SDA signal
tSU; tSTO
Setup time for STOP condition
CB
MIN
TYP
MAX
Standard mode
20+0.1CB
1000
Fast mode
20+0.1CB
300
High-speed mode, CB – 100 pF max
10
80
High-speed mode, CB – 400 pF max
20
160
Standard mode
20+0.1CB
300
Fast mode
20+0.1CB
300
High-speed mode, CB – 100 pF max
10
80
High-speed mode, CB – 400 pF max
20
160
Standard mode
4
UNIT
ns
ns
µs
Fast mode
600
High-speed mode
160
ns
Capacitive load for SDA and SCL
400
pF
I2C Timing Diagrams
SDA
tLOW
tf
tSU;DAT
tr
tf
tHD;STA
tSP
tr
tBUF
SCL
tHD;STA
S
tSU;STA
tHIGH
tHD;DAT
tSU;STO
Sr
P
S
Figure 32. Serial Interface Timing for F/S Mode
Sr
tfDA
Sr P
trDA
SDAH
tSU;STA
tSU;STO
tHD;DAT
tHD;STA
tSU;DAT
SCLH
tfCL1
trCL1
(1)
trCL1
trCL1
tHIGH
tLOW
tLOW
(1)
tHIGH
= MCS current source pull-up
= RP resister pull-up
Figure 33. Serial Interface Timing for H/S Mode
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REGISTER DESCRIPTION
Table 5. Status/Control Register (READ/WRITE)
Memory Location: 00, Reset State: x1xx 0xxx
BIT
NAME
READ/WRITE
FUNCTION
B7 (MSB)
TMR_RST/OTG
Read/Write
Write: TMR_RST function, write "1" to reset the safety timer (auto clear)
Read: OTG pin status, 0-OTG pin at Low level, 1-OTG pin at High level
B6
EN_STAT
Read/Write
0-Disable STAT pin function, 1-Enable STAT pin function (default 1)
B5
STAT2
Read Only
B4
STAT1
Read Only
B3
BOOST
Read Only
1-Boost mode, 0-Not in boost mode
B2
FAULT_3
Read Only
B1
FAULT_2
Read Only
B1 (LSB)
FAULT_1
Read Only
Charge mode: 000-Normal, 001-VBUS OVP, 010-Sleep mode, 011-Poor input
source or VBUS < UVLO, 100-Battery OVP, 101-Thermal shutdown, 110-Timer
fault, 111-No battery
Boost mode: 000-Normal, 001-VBUS OVP, 010-Over load, 011-Battery voltage
is too low, 100-Battery OVP, 101-Thermal shutdown, 110-Timer fault, 111-NA
00-Ready, 01-Charge in progress, 10-Charge done, 11-Fault
Table 6. Control Register (READ/WRITE)
Memory Location: 01, Reset State: 0011 0000 (30H)
(1)
BIT
NAME
READ/WRITE
FUNCTION
B7 (MSB)
Iin_Limit_2
Read/Write
B6
Iin_Limit_1
Read/Write
00-USB host with 100-mA current limit, 01-USB host with 500-mA current limit,
10-USB host/charger with 800-mA current limit, 11-No input current limit
(default 00)
B5
V(LOWV_2)
(1)
Read/Write
200mV weak battery voltage threshold (default 1)
B4
VLOWV_1 (1)
Read/Write
100mV weak battery voltage threshold (default 1)
B3
TE
Read/Write
1-Enable charge current termination, 0-Disable charge current termination
(default 0)
B2
CE
Read/Write
1-Charger is disabled, 0-Charger enabled (default 0)
B1
HZ_MODE
Read/Write
1-High impedance mode, 0-Not high impedance mode (default 0)
B1 (LSB)
OPA_MODE
Read/Write
1-Boost mode, 0-Charger mode (default 0)
The range of the weak battery voltage threshold (V(LOWV)) is 3.4 V to 3.7 V with an offset of 3.4 V and step of 100 mV (default of 3.7 V).
Table 7. Control/Battery Voltage Register (READ/WRITE)
Memory Location: 02, Reset State: 0000 1010 (0AH)
BIT
NAME
Read/Write
B7 (MSB)
VO(REG5)
Read/Write
Battery Regulation Voltage: 640 mV (default 0)
Function
B6
VO(REG4)
Read/Write
Battery Regulation Voltage: 320 mV (default 0)
B5
VO(REG3)
Read/Write
Battery Regulation Voltage: 160 mV (default 0)
B4
VO(REG2)
Read/Write
Battery Regulation Voltage: 80 mV (default 0)
B3
VO(REG1)
Read/Write
Battery Regulation Voltage: 40 mV (default 1)
B2
VO(REG0)
Read/Write
Battery Regulation Voltage: 20 mV (default 0)
B1
OTG_PL
Read/Write
1-Active at High level, 0-Active at Low level (default 1)
B1 (LSB)
OTG_EN
Read/Write
1-Enable OTG Pin, 0-Disable OTG pin (default 0)
Charge voltage range is 3.5 V to 4.44 V with the offset of 3.5 V and step of 20 mV (default 3.54 V).
Table 8. Vender/Part/Revision Register (Read only)
Memory Location: 03, Reset State: 0100 x001
BIT
NAME
READ/WRITE
FUNCTION
B7 (MSB)
Vender2
Read Only
Vender Code: bit 2 (default 0)
B6
Vender1
Read Only
Vender Code: bit 1 (default 1)
B5
Vender0
Read Only
Vender Code: bit 0 (default 0)
B4
PN1
Read Only
Part Number Code: bit 1 (default 0)
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Table 8. Vender/Part/Revision Register (Read only)
Memory Location: 03, Reset State: 0100 x001 (continued)
BIT
NAME
READ/WRITE
FUNCTION
B3
PN0
Read Only
Part Number Code: bit 0 (default 0 for bq24151, default 1 for bq24150)
B2
Revision2
Read Only
B1
Revision1
Read Only
B1 (LSB)
Revision0
Read Only
000: Revision 1.0;
001: Revision 1.1;
010: Revision 1.2;
011-111: Future Revisions
Table 9. Battery Termination/Fast Charge Current Register (Read/Write)
Memory Location: 04, Reset State: 1000 1001 (89H)
BIT
NAME
Read/Write
Function
B7 (MSB)
Reset
Read/Write
Write: 1-Charger in reset mode, 0-No effect
Read: always get "1"
B6
VI(CHRG2)
Read/Write
Charge current sense voltage: 27.2 mV (default 0)
B5
VI(CHRG1)
Read/Write
Charge current sense voltage: 13.6 mV(default 0)
B4
VI(CHRG0)
Read/Write
Charge current sense voltage: 6.8 mV (default 0)
B3
NA
Read/Write
NA
B2
VI(TERM2)
Read/Write
Termination current sense voltage: 13.6 mV (default 0)
B1
VI(TERM1)
Read/Write
Termination current sense voltage: 6.8 mV (default 0)
B1 (LSB)
VI(TERM0)
Read/Write
Termination current sense voltage: 3.4 mV (default 1)
Default charge current is 550 mA and default termination current is 100 mA, if a 68-mΩ sensing resistor is used.
Both the termination current range and charge current range are depending on the sensing resistor R(SNS)). The
termination current step (IO(TERM_STEP)) is calculated using Equation 2:
IO(TERM_STEP) =
VI(TERM0)
R(SNS)
(2)
Table 10 shows the termination current settings with two sensing resistors.
Table 10. Termination Current Settings for 68-mΩ and 100-mΩ Sense Resistors
BIT
VI(TERM) (mV)
I(TERM) (mA)
R(SNS) = 68mΩ
I(TERM) (mA)
R(SNS) = 100mΩ
VI(TERM2)
13.6
200
136
VI(TERM1)
6.8
100
68
VI(TERM0)
3.4
50
34
Offset
3.4
50
34
The charge current step (IO(CHARGE_STEP)) is calculated using Equation 3:
IO(CHARGE_STEP) =
VI(CHRG0)
R(SNS)
(3)
Table 11 shows the charge current settings with two sensing resistors.
Table 11. Charge Current Settings for 68-mΩ and 100-mΩ Sense Resistors
30
BIT
VI(REG) (mV)
IO(CHARGE) (mA)
R(SNS) = 68mΩ
IO(CHARGE) (mA)
R(SNS) = 100mΩ
VI(CHRG2)
27.2
400
272
VI(CHRG1)
13.6
200
136
VI(CHRG0)
6.8
100
68
Offset
37.4
550
374
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DESIGN EXAMPLE FOR TYPICAL APPLICATION CIRCUITS
Systems Design Specifications:
• VBUS = 5 V
• V(BAT) = 4.2 V (1-Cell)
• I(charge) = 1.25 A
• Inductor ripple current = 30% of fast charge current
1. Determine the inductor value (LOUT) for the specified charge current ripple:
VBAT ´ (VBUS - VBAT)
VBUS ´ f ´ D IL
L OUT =
, the worst case is when battery voltage is as close as to half of the input
voltage.
LOUT =
2.5 ´ (5 - 2.5)
5 ´ (3 ´ 106 ) ´ 1.25 ´ 0.3
LOUT = 1.11 µH
Select the output inductor to standard 1 µH. Calculate the total ripple current with using the 1-µH inductor:
DIL =
VBAT ´ (VBUS - VBAT)
VBUS ´ f ´ LOUT
DIL =
2.5 ´ (5 - 2.5)
5 ´ (3 ´ 106 ) ´ (1 ´ 10-6 )
ΔIL = 0.42 A
Calculate the maximum output current:
DIL
ILPK = IOUT +
2
ILPK = 1.25 +
0.42
2
ILPK = 1.46 A
Select 2.5mm by 2.0mm 1-µH 1.5-A surface mount multi-layer inductor. The suggested inductor part
numbers are shown as following.
Table 12. Inductor Part Numbers
PART NUMBER
INDUCTANCE
SIZE
MANUFACTURER
LQM2HPN1R0MJ0
1 µH
2.5 x 2.0 mm
muRata
MIPS2520D1R0
1 µH
2.5 x 2.0 mm
FDK
MDT2520-CN1R0M
1 µH
2.5 x 2.0 mm
TOKO
CP1008
1 µH
2.5 x 2.0 mm
Inter-Technical
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2. Determine the output capacitor value COUT using 40 kHz as the resonant frequency:
fo =
1
2p ´
COUT =
COUT =
LOUT ´ COUT
1
4p2 ´ f02 ´ LOUT
1
4p2 ´ (40 ´ 103 )2 ´ (1 ´ 10-6 )
COUT = 15.8 µF
Select two 0603 X5R 6.3V 10-µF ceramic capacitors in parallel i.e., muRata GRM188R60J106M.
3. Determine the sense resistor using the following equation:
V(RSNS)
R(SNS) =
I(CHARGE)
The maximum sense voltage across sense resistor is 85 mV. In order to get a better current regulation
accuracy, V(RSNS) should equal 85mV, and calculate the value for the sense resistor.
85mV
R(SNS) =
1.25A
R(SNS) = 68 mΩ
This is a standard value. If it is not a standard value, then choose the next close value and calculate the real
charge current. Calculate the power dissipation on the sense resistor:
P(RSNS) = I(CHARGE)2 × R(SNS)
P(RSNS) = 1252 × 0.068
P(RSNS) = 0.106 W
Select 0402 0.125-W 68-mΩ 2% sense resistor, i.e. Panasonic ERJ2BWGR068.
4. Measured efficiency and total power loss for different inductors are shown in Figure 34.
Battery Charge Efficiency
Battery Charge Loss
90
800
FDK
Efficiency - %
88
87
86
TA=25°C,
VBUS = 5 V,
VBAT = 3 V
TA=25°C,
VBUS = 5 V,
VBAT = 3 V
600
muRata
Inter-Technical
85
500
400
Inter-Technical
TOKO
FDK
muRata
300
84
200
83
82
500
700
Loss - mW
TOKO
89
600
700
800 900 1000 1100 1200 1300
Charge Current - mA
100
500
600
700
800 900 1000 1100 1200 1300
Charge Current - mA
Figure 34. Measured Efficiency and Power Loss
32
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PCB LAYOUT CONSIDERATION
It is important to pay special attention to the PCB layout. The following provides some guidelines:
• To obtain optimal performance, the power input capacitors, connected from input to PGND, should be placed
as close as possible to the bq24150/1. The output inductor should be placed close to the IC and the output
capacitor connected between the inductor and PGND of the IC. The intent is to minimize the current path loop
area from the SW pin through the LC filter and back to the PGND pin. To prevent high frequency oscillation
problems, proper layout to minimize high frequency current path loop is critical (see Figure 35). The sense
resistor should be adjacent to the junction of the inductor and output capacitor. Route the sense leads
connected across the RSNS back to the IC, close to each other (minimize loop area) or on top of each other
on adjacent layers (do not route the sense leads through a high-current path, see Figure 36).
• Place all decoupling capacitor close to their respective IC pin and as close as to PGND (do not place
components such that routing interrupts power stage currents). All small control signals should be routed
away from the high current paths.
• The PCB should have a ground plane (return) connected directly to the return of all components through vias
(two vias per capacitor for power-stage capacitors, two vias for the IC PGND, one via per capacitor for
small-signal components). A star ground design approach is typically used to keep circuit block currents
isolated (high-power/low-power small-signal) which reduces noise-coupling and ground-bounce issues. A
single ground plane for this design gives good results. With this small layout and a single ground plane, there
is no ground-bounce issue, and having the components segregated minimizes coupling between signals.
• The high-current charge paths into VBUS, PMID and from the SW pins must be sized appropriately for the
maximum charge current in order to avoid voltage drops in these traces. The PGND pins should be
connected to the ground plane to return current through the internal low-side FET.
L1
VBUS
SW
R1
V BAT
High
Frequency
BAT
V IN
PMID
Current
Path
PGND
C3
C2
C1
Figure 35. High Frequency Current Path
Charge Current Direction
R SNS
To Inductor
To Capacitor and battery
Current Sensing Direction
To CSIN and CSOUT pin
Figure 36. Sensing Resistor PCB Layout
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PACKAGE SUMMARY
WCSP PACKAGE
(Top View)
A1
A2
A3
A4
B1
B2
B3
B4
C1
C2
C3
C4
D1
D2
D3
D4
E1
E2
E3
E4
CHIP SCALE PACKAGE
(Top Side Symbol For bq24150)
CHIP SCALE PACKAGE
(Top Side Symbol For bq24151)
TIYMLLLLS
bq24150
TIYMLLLLS
bq24151
D
0-Pin A1 Marker, TI-TI Letters, YM- Year Month Date Code, LLLL-Lot Trace Code, S-Assembly Site Code
E
CHIP SCALE PACKAGING DIMENSIONS
TM
The bq24150/1 devices are available in a 20-bump chip scale package (YFF, NanoFree ). The package dimensions are:
· D = 1.976 ± 0.05 mm
· E = 1.924 ± 0.05 mm
34
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PACKAGE OPTION ADDENDUM
www.ti.com
30-Jun-2008
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
BQ24150YFFR
ACTIVE
DSBGA
YFF
20
3000 Green (RoHS &
no Sb/Br)
SnAgCu
Level-1-260C-UNLIM
BQ24150YFFT
ACTIVE
DSBGA
YFF
20
250
Green (RoHS &
no Sb/Br)
SnAgCu
Level-1-260C-UNLIM
BQ24151YFFR
ACTIVE
DSBGA
YFF
20
3000 Green (RoHS &
no Sb/Br)
SnAgCu
Level-1-260C-UNLIM
BQ24151YFFT
ACTIVE
DSBGA
YFF
20
250
SnAgCu
Level-1-260C-UNLIM
Green (RoHS &
no Sb/Br)
Lead/Ball Finish
MSL Peak Temp (3)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
4-Jun-2008
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
Diameter Width
(mm) W1 (mm)
BQ24150YFFR
DSBGA
YFF
20
3000
178.0
A0 (mm)
B0 (mm)
K0 (mm)
P1
(mm)
W
Pin1
(mm) Quadrant
8.4
2.18
2.18
0.81
4.0
8.0
Q1
BQ24150YFFT
DSBGA
YFF
20
250
178.0
8.4
2.18
2.18
0.81
4.0
8.0
Q1
BQ24151YFFR
DSBGA
YFF
20
3000
178.0
8.4
2.18
2.18
0.81
4.0
8.0
Q1
BQ24151YFFT
DSBGA
YFF
20
250
178.0
8.4
2.18
2.18
0.81
4.0
8.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
4-Jun-2008
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
BQ24150YFFR
DSBGA
YFF
20
3000
217.0
193.0
35.0
BQ24150YFFT
DSBGA
YFF
20
250
217.0
193.0
35.0
BQ24151YFFR
DSBGA
YFF
20
3000
217.0
193.0
35.0
BQ24151YFFT
DSBGA
YFF
20
250
217.0
193.0
35.0
Pack Materials-Page 2
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