BSS138LT1 Power MOSFET 200 mA, 50 V N−Channel SOT−23 Typical applications are DC−DC converters, power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. http://onsemi.com 200 mA, 50 V RDS(on) = 3.5 W Features • Low Threshold Voltage (VGS(th): 0.5 V−1.5 V) Makes it Ideal for • • N−Channel 3 Low Voltage Applications Miniature SOT−23 Surface Mount Package Saves Board Space Pb−Free Packages are Available 1 MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS 50 Vdc Gate−to−Source Voltage − Continuous VGS ± 20 Vdc Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (tp ≤ 10 ms) ID IDM 200 800 Total Power Dissipation @ TA = 25°C PD 225 mW Operating and Storage Temperature Range TJ, Tstg − 55 to 150 °C RqJA 556 °C/W TL 260 °C Thermal Resistance, Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes, for 10 seconds mA 2 MARKING DIAGRAM 3 1 2 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. J1 M G G SOT−23 CASE 318 STYLE 21 1 J1 = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Shipping† Device Package BSS138LT1 SOT−23 3000 Tape & Reel SOT−23 (Pb−Free) 3000 Tape & Reel SOT−23 10,000 Tape & Reel SOT−23 (Pb−Free) 10,000 Tape & Reel BSS138LT1G BSS138LT3 BSS138LT3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2011 September, 2011 − Rev. 6 1 Publication Order Number: BSS138LT1/D BSS138LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 50 − − Vdc − − − − − − 0.1 0.5 5.0 OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 mAdc) Zero Gate Voltage Drain Current (VDS = 25 Vdc, VGS = 0 Vdc, 25°C) (VDS = 50 Vdc, VGS = 0 Vdc, 25°C) (VDS = 50 Vdc, VGS = 0 Vdc, 150°C) IDSS Gate−Source Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS − − ±0.1 mAdc Gate−Source Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) VGS(th) 0.5 − 1.5 Vdc Static Drain−to−Source On−Resistance (VGS = 2.75 Vdc, ID < 200 mAdc, TA = −40°C to +85°C) (VGS = 5.0 Vdc, ID = 200 mAdc) rDS(on) − − 5.6 − 10 3.5 gfs 100 − − mmhos pF mAdc ON CHARACTERISTICS (Note 1) Forward Transconductance (VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz) W DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1 MHz) Ciss − 40 50 Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1 MHz) Coss − 12 25 Transfer Capacitance (VDG = 25 Vdc, VGS = 0, f = 1 MHz) Crss − 3.5 5.0 td(on) − − 20 td(off) − − 20 SWITCHING CHARACTERISTICS (Note 2) Turn−On Delay Time Turn−Off Delay Time (VDD = 30 Vdc, ID = 0.2 Adc,) 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. http://onsemi.com 2 ns BSS138LT1 TYPICAL ELECTRICAL CHARACTERISTICS 0.8 0.9 VGS = 3.5 V TJ = 25°C I D , DRAIN CURRENT (AMPS) I D , DRAIN CURRENT (AMPS) VGS = 3.25 V 0.6 VGS = 3.0 V 0.5 VGS = 2.75 V 0.4 VGS = 2.5 V 0.3 0.2 0.1 0 VDS = 10 V 0.8 0.7 - 55°C 0.7 150°C 0.6 0.5 0.4 0.3 0.2 0.1 0 0 1 2 4 3 5 6 7 8 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 9 10 0 0.5 3.5 1 1.5 2 2.5 3 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 2.2 4.5 1.25 ID = 1.0 mA 2 Vgs(th) , VARIANCE (VOLTS) VGS = 10 V ID = 0.8 A 1.8 1.6 VGS = 4.5 V ID = 0.5 A 1.4 1.2 1 1.125 1 0.875 0.8 0.6 -55 -5 45 95 0.75 -55 145 -30 -5 TJ, JUNCTION TEMPERATURE (°C) 20 45 70 95 120 145 TJ, JUNCTION TEMPERATURE (°C) Figure 4. Threshold Voltage Variation with Temperature Figure 3. On−Resistance Variation with Temperature 1.0E-5 10 VDS = 40 V TJ = 25°C IDSS, DRAIN-TO-SOURCE LEAKAGE (A) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 4 Figure 2. Transfer Characteristics Figure 1. On−Region Characteristics RDS(on) , DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 25°C 8 6 4 ID = 200 mA 2 1.0E-6 150°C 125°C 1.0E-7 1.0E-8 1.0E-9 0 0 500 1000 1500 2000 2500 0 3000 QT, TOTAL GATE CHARGE (pC) 5 10 15 20 25 30 35 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. Gate Charge Figure 6. IDSS http://onsemi.com 3 40 45 50 BSS138LT1 10 VGS = 2.5 V 9 8 150°C 7 6 5 25°C 4 -55°C 3 2 1 0.05 0 0.15 0.1 0.25 0.2 RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) TYPICAL ELECTRICAL CHARACTERISTICS 8 VGS = 2.75 V 7 150°C 6 5 4 25°C 3 2 -55°C 1 0.05 0 ID, DRAIN CURRENT (AMPS) R DS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) R DS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) 6 VGS = 4.5 V 150°C 5 4.5 4 3.5 3 25°C 2.5 2 -55°C 1.5 1 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 4.5 VGS = 10 V 150°C 4 3.5 3 2.5 25°C 2 -55°C 1.5 1 0 0.05 0.1 ID, DRAIN CURRENT (AMPS) 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 ID, DRAIN CURRENT (AMPS) Figure 10. On−Resistance versus Drain Current Figure 9. On−Resistance versus Drain Current 1 I D , DIODE CURRENT (AMPS) 0.25 0.2 Figure 8. On−Resistance versus Drain Current Figure 7. On−Resistance versus Drain Current 5.5 0.15 0.1 ID, DRAIN CURRENT (AMPS) 120 100 TJ = 150°C 0.1 25°C -55°C 80 60 Ciss 0.01 40 Coss 20 0.001 Crss 0 0.2 0.4 0.6 0.8 1.0 0 1.2 0 5 10 15 VSD, DIODE FORWARD VOLTAGE (VOLTS) Figure 11. Body Diode Forward Voltage Figure 12. Capacitance http://onsemi.com 4 20 25 BSS138LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 2 e b DIM A A1 b c D E e L L1 HE 0.25 q A L A1 L1 VIEW C MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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