MITSUBISHI SEMICONDUCTOR GaAs FET FA01219A GaAs FET HYBRID IC DESCRIPTION Unit:mm FA01219A is RF Hybrid IC designed for 0.8GHz band small size handheld radio. GND FEATURES • Low voltage 3.5V • High gain 22.5B • High efficiency 50% • High power 30.5dBm 1 8 2 7 3 6 4 5 APPLICATION GND 10.0 PDC0.8GHz 0.8 2.0 6.0 1 RF INPUT 5 2 VD1 6 3 4 GND VD2 RF OUTPUT GND 7 GND 8 VG1,2 tolerance:±0.2 ABSOLUTE MAXIMUM RATINGS Symbol VD Pin TC(op) Tstg Parameter Drain voltage Input power Operation case temperature Storage temperature Condition Po≤30.5dBm ZG=ZL=50Ω Tc 25˚C 25˚C – – Ratings 4.5 15 -20 to +85 -30 to +90 Unit V dBm ˚C ˚C Note: Each maximum ratings is guaranteed independently and duty=1/3 operation. T=20 msec ELECTRICAL CHARACTERISTICS(Ta=25˚C) Symbol Parameter f Frequency Input power Pin IDt Total drain current Return loss ρin ±50kHz adjacent channel power ACP50 ACP100 ±100kHz adjacent channel power 2nd harmonics 2fo 3rd harmonics 3fo Test conditions Po=30.5dBm VD1=VD2=3.5V VG1,2=-2.5V ZG=ZL=50Ω (π/4DQPSK) Ditto (CW) Min 925 – – – – – – – Limits Typ – 5 640 – – – – – Max 958 8 720 -6 -47 -62 -30 -30 Unit MHz dBm mA dB dBc dBc dBc dBc Nov. ´97 MITSUBISHI SEMICONDUCTOR GaAs FET FA01219A GaAs FET HYBRID IC TYPICAL CHARACTERISTICS 1 Frequency (MHz) 925.0 941.5 958.0 Pin (dBm) 5.78 6.05 6.52 Po (dBm) 30.5 30.5 30.5 Id1 (mA) 93 90 91 Id2 (mA) 552 547 543 Idt (mA) 644 637 634 Ig1,2 (mA) -1.86 -1.86 -1.86 -50k (dBc) -49.9 -51.7 -51.6 30 f=925MHz VD1=3.5V VD2=3.5V VG=-2.5V -100k (dBc) -62.5 -63.6 -64.4 VD1=3.5V,VD2=3.5V,VG=-2.5V +100k 2SP 3SP RL (dBc) (dBc) (dBc) (dB) -62.6 -37.5 -49.2 -10.7 -64.1 -37.4 -49.7 -9.4 -64.6 -37.2 -50.2 -8.5 PO,IDs vs Pin CHARACTERSTICS PO,ACP vs Pin CHARACTERISTICS 35 +50k (dBc) -49.2 -51.2 -51.6 -30 35 -40 30 PO -50 25 IDt -60 20 -70 15 1000 900 800 PO 700 ACP+50k 25 600 ACP-50k ID2 20 ACP+100k 500 400 300 ACP-100k 15 200 ID1 10 -5.0 0.0 5.0 Pin(dBm) -80 10.0 10 -5 0 5 100 0 10 Pin(dBm) Nov. ´97 MITSUBISHI SEMICONDUCTOR GaAs FET FA01219A GaAs FET HYBRID IC TYPICAL CHARACTERISTICS 2 ID vs f CHARACTERISTICS ACP vs f CHARACTERISTICS -40 -45 VD1=3.5V VD2=3.5V VG=-2.5V PO=30.5dBm SET -50k -50 +50k -55 -60 +100k -65 -100k 925 908.5 941.5 958 974.5 800 750 700 650 600 550 500 450 VD1=3.5V VD2=3.5V 400 VG=-2.5V 350 PO=30.5dBm SET 300 250 200 150 1D1 100 50 0 908.5 925 941.5 f(MHz) -2.0 7.0 -4.0 Pin 6.0 -6.0 -8.0 R.L. 4.0 -10.0 3.0 -12.0 VD1=3.5V VD2=3.5V VG=-2.5V PO=30.5dBm SET 1.0 0.0 908.5 925 941.5 f(MHz) 958 974.5 ID vs VD CHARACTERISTICS Pin, R.L vs f CHARACTERISTICS 2.0 1D2 f(MHz) 8.0 5.0 IDt 958 -14.0 -16.0 -18.0 974.5 800 750 700 650 600 550 500 450 400 350 300 250 200 150 100 50 0 IDt ID2 f=925MHz VG=-2.5V PO=30.5dBm SET ID1 3 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4 VD(V) Nov. ´97 MITSUBISHI SEMICONDUCTOR GaAs FET FA01219A GaAs FET HYBRID IC EQUIVALENT CIRCUIT 1ST GATE 2ND GATE RF INPUT MATCHING CIRCUIT 2ND DRAIN 1ST DRAIN MATCHING CIRCUIT MATCHING CIRCUIT RF OUTPUT GND Nov. ´97