Product Folder Order Now Support & Community Tools & Software Technical Documents DRV5012 SLVSDD5 – AUGUST 2017 DRV5012 Ultra-Low-Power Digital-Latch Hall-Effect Sensor 1 Features 3 Description • • The DRV5012 device is an ultra-low-power digitallatch Hall effect sensor with a pin-selectable sampling rate. Industry-Leading Low-Power Consumption Pin-Selectable Sampling Rate: – SEL = Low: 20 Hz Using 1.3 µA (1.8 V) – SEL = High: 2.5 kHz Using 142 µA (1.8 V) 1.65- to 5.5-V Operating VCC Range High Magnetic Sensitivity: ±2 mT (Typical) Robust Hysteresis: 4 mT (Typical) Push-Pull CMOS Output Small and Thin X2SON Package –40°C to +85°C Operating Temperature Range 1 • • • • • • Using an internal oscillator, the DRV5012 device samples the magnetic field and updates the output at a rate of 20 Hz or 2.5 kHz, depending on the SEL pin. This dual-bandwidth feature can allow systems to monitor changes in movement while using minimal power. 2 Applications • • Brushless DC Motor Sensors Incremental Rotary Encoding: – Motor Speed – Mechanical Travel – Fluid Measurement – Knob Turning – Wheel Speed Portable Medical Devices E-Locks, E-Bikes, Motorized Blinds Flow Meters Contactless Activation • • • • When a south magnetic pole is near the top of the package and the BOP threshold is exceeded, the device drives a low voltage. The output stays low until a north pole is applied and the BRP threshold is crossed, which causes the output to drive a high voltage. Alternating north and south poles are required to toggle the output, and integrated hysteresis separates BOP and BRP to provide robust switching. The device operates from a VCC range of 1.65 V to 5.5 V, and is packaged in a small X2SON. Device Information(1) PART NUMBER DRV5012 Current Consumption in 20-Hz Mode 3 N S S N N DRV5012 VCC OUT SEL GND Controller GPIO GPIO S Copyright © 201 7, Texas Instrumen ts Incorpor ate d Average Supply Current (PA) VCC N BODY SIZE (NOM) 1.10 mm × 1.40 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. Typical Schematic S PACKAGE X2SON (4) 2.5 2 1.5 1 1.65 V 3V 5.5 V 0.5 0 -40 -10 20 Temperature (qC) 50 80 D016 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. DRV5012 SLVSDD5 – AUGUST 2017 www.ti.com Table of Contents 1 2 3 4 5 6 7 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 3 6.1 6.2 6.3 6.4 6.5 6.6 6.7 3 3 4 4 5 5 6 Absolute Maximum Ratings ...................................... ESD Ratings ............................................................ Recommended Operating Conditions....................... Thermal Information .................................................. Electrical Characteristics........................................... Magnetic Characteristics........................................... Typical Characteristics .............................................. 7.4 Device Functional Modes........................................ 10 8 Application and Implementation ........................ 11 8.1 Application Information............................................ 11 8.2 Typical Applications ............................................... 11 8.3 Do's and Don'ts ....................................................... 15 9 Power Supply Recommendations...................... 16 10 Layout................................................................... 16 10.1 Layout Guidelines ................................................. 16 10.2 Layout Example .................................................... 16 11 Device and Documentation Support ................. 17 11.1 11.2 11.3 11.4 11.5 11.6 Detailed Description .............................................. 7 7.1 Overview ................................................................... 7 7.2 Functional Block Diagram ......................................... 7 7.3 Feature Description................................................... 7 Device Support...................................................... Receiving Notification of Documentation Updates Community Resources.......................................... Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 17 17 17 17 17 17 12 Mechanical, Packaging, and Orderable Information ........................................................... 17 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. 2 DATE REVISION NOTES August 2017 * Initial release. Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated Product Folder Links: DRV5012 DRV5012 www.ti.com SLVSDD5 – AUGUST 2017 5 Pin Configuration and Functions DMR Package 4-Pin X2SON With Exposed Thermal Pad Top View VCC SEL 1 4 Thermal Pad 2 3 GND OUT Pin Functions PIN I/O DESCRIPTION NAME NO. GND 2 — Ground reference OUT 3 O Push-pull CMOS output. Drives a VCC or ground level. SEL 4 I CMOS input that selects the sampling rate: a low voltage sets 20 Hz; a high voltage sets 2.5 kHz. VCC 1 — 1.65-V to 5.5-V power supply. TI recommends connecting this pin to a ceramic capacitor to ground with a value of at least 0.1 µF. Thermal Pad PAD — No-connect. This pin should be left floating or tied to ground. It should be soldered to the board for mechanical support. 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT –0.3 5.5 V Power supply voltage VCC Power supply voltage slew rate VCC Output voltage OUT –0.3 VCC + 0.3 V Output current OUT –5 5 mA Input voltage SEL –0.3 VCC + 0.3 V Unlimited Magnetic flux density, BMAX Unlimited Junction temperature, TJ Storage temperature, Tstg (1) V / µs –65 T 105 °C 150 °C Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 6.2 ESD Ratings VALUE Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 V(ESD) (1) (2) Electrostatic discharge (1) Charged-device model (CDM), per JEDEC specification JESD22C101 (2) UNIT ±6000 ±750 V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated Product Folder Links: DRV5012 3 DRV5012 SLVSDD5 – AUGUST 2017 www.ti.com 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT VCC Power supply voltage (VCC) 1.65 5.5 VO Output voltage (OUT) 0 VCC V IO Output current (OUT) –5 5 VI Input voltage (SEL) 0 VCC V TA Operating ambient temperature –40 85 °C V mA 6.4 Thermal Information DRV5012 THERMAL METRIC (1) DMR (X2SON) UNIT 4 PINS RθJA Junction-to-ambient thermal resistance 159 °C/W RθJC(top) Junction-to-case (top) thermal resistance 77 °C/W RθJB Junction-to-board thermal resistance 102 °C/W ψJT Junction-to-top characterization parameter 0.9 °C/W ψJB Junction-to-board characterization parameter 100 °C/W (1) 4 For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated Product Folder Links: DRV5012 DRV5012 www.ti.com SLVSDD5 – AUGUST 2017 6.5 Electrical Characteristics for VCC = 1.65 V to 5.5 V, over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP VCC – 0.35 VCC – 0.1 MAX UNIT OUT pin VOH High-level output voltage IOUT = –1 mA VOL Low-level output voltage IOUT = 1 mA 0.1 V 0.3 V SEL pin VCC = 1.65 to 2.5 V 0.8 × VCC VIH High-level input voltage VIL Low-level input voltage IIH High-level input leakage current SEL = VCC 1 nA IIL Low-level input leakage current SEL = 0 V 1 nA VCC = 2.5 to 5.5 V V 2 0.15 × VCC V DYNAMIC CHARACTERISTICS fS Frequency of magnetic sampling tS Period of magnetic sampling SEL = Low 13.3 20 37 SEL = High 1665 2500 4700 SEL = Low 27 50 75 SEL = High 0.21 0.4 0.6 VCC = 1.8 V ICC(AVG) Average current consumption VCC = 3 V VCC = 5 V SEL = Low 1.3 SEL = High 142 SEL = Low 1.6 3.3 SEL = High 153 370 SEL = Low 2 SEL = High 160 Hz ms µA ICC(PK) Peak current consumption 2 2.7 mA tON Power-on time (see Figure 11) 55 100 µs tACTIVE Active time period (see Figure 11) 40 µs 6.6 Magnetic Characteristics for VCC = 1.65 V to 5.5 V, over operating free-air temperature range (unless otherwise noted) MIN TYP MAX BOP Magnetic threshold operate point (see Figure 9) PARAMETER TEST CONDITIONS UNIT 0.6 2 3.3 mT BRP Magnetic threshold release point (see Figure 9) –3.3 –2 –0.6 mT BHYS Magnetic hysteresis: |BOP – BRP| 2 4 Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated Product Folder Links: DRV5012 mT 5 DRV5012 SLVSDD5 – AUGUST 2017 www.ti.com 6.7 Typical Characteristics 180 2.5 Average Supply Current (µA) Average Supply Current (PA) 3 2 1.5 1 1.65 V 3V 5.5 V 0.5 0 -40 -10 20 Temperature (qC) 50 170 160 150 140 130 -40 80 Magnetic Threshold Release Point (mT) Magnetic Threshold Operate Point (mT) 4 3 2 1 -10 20 Temperature (qC) 50 80 D001 -1 -2 -3 -4 -5 -40 80 -10 D002 20 Temperature (qC) 50 80 D003 Figure 4. BRP vs Temperature 0 Magnetic Threshold Release Point (mT) 5 Magnetic Threshold Operate Point (mT) 50 0 Figure 3. BOP vs Temperature 4 3 2 1 2.5 3.5 Supply Voltage (V) 4.5 5.5 -1 -2 -3 -4 -5 1.5 D004 Figure 5. BOP vs VCC 6 20 Temperature (qC) Figure 2. ICC(AVG) vs Temperature (2.5-kHz Mode) 5 0 1.5 -10 D016 Figure 1. ICC(AVG) vs Temperature (20-Hz Mode) 0 -40 1.65 V 3V 5.5 V 2.5 3.5 Supply Voltage (V) 4.5 5.5 D005 Figure 6. BRP vs VCC Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated Product Folder Links: DRV5012 DRV5012 www.ti.com SLVSDD5 – AUGUST 2017 7 Detailed Description 7.1 Overview The DRV5012 device is a magnetic sensor with a digital output that latches the most recent pole measured. Applying a south magnetic pole near the top of the package causes the output to drive low, a north pole causes the output to drive high, and the absence of a magnetic field causes the output to continue to drive the previous state, whether low or high. The device integrates a Hall effect element, analog signal conditioning, and a low-frequency oscillator that enables ultra-low average power consumption. By operating from a 1.65-V to 5.5-V supply, the device periodically measures magnetic flux density, updates the output, and enters a low-power sleep state. A logic input pin, SEL, sets the sampling frequency to 20 Hz or 2.5 kHz with a tradeoff in power consumption. 7.2 Functional Block Diagram 0.1 F (min) SEL Voltage Regulator VCC Ultra-low-power Oscillator REF VCC Element Bias Offset Cancellation Output Control Amp OUT Temperature Compensation GND Copyright © 201 7, Texas Instrumen ts Incorpor ate d 7.3 Feature Description 7.3.1 Magnetic Flux Direction The DRV5012 device is sensitive to the magnetic field component that is perpendicular to the top of the package (as shown in Figure 7). B PCB Figure 7. Direction of Sensitivity Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated Product Folder Links: DRV5012 7 DRV5012 SLVSDD5 – AUGUST 2017 www.ti.com Feature Description (continued) Magnetic flux that travels from the bottom to the top of the package is considered positive in this data sheet. This condition exists when a south magnetic pole is near the top of the package. Magnetic flux that travels from the top to the bottom of the package results in negative millitesla values. positive B negative B N S S N PCB PCB Figure 8. Flux Direction Polarity 7.3.2 Magnetic Response Figure 9 shows the device functionality and hysteresis. OUT VCC BHYS 0V B north BRP 0 mT BOP south Figure 9. Device Functionality 8 Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated Product Folder Links: DRV5012 DRV5012 www.ti.com SLVSDD5 – AUGUST 2017 Feature Description (continued) 7.3.3 Output Driver The device features a push-pull CMOS output that can drive a VCC or ground level. VCC Output Control Output Figure 10. Push-Pull Output (Simplified) 7.3.4 Sampling Rate When the DRV5012 device powers up, it measures the first magnetic sample and sets the output within the tON time. The output is latched, and the device enters an ultra-low-power sleep state. After each tS time has passed, the device measures a new sample and updates the output if necessary. If the magnetic field does not change between periods, the output also does not change. VCC 1.65 V tON time tS ICC tS tACTIVE ICC(PK) time Output VCC Invalid 1st sample 2nd sample 3rd sample GND time Figure 11. Timing Diagram Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated Product Folder Links: DRV5012 9 DRV5012 SLVSDD5 – AUGUST 2017 www.ti.com Feature Description (continued) 7.3.5 SEL Pin The SEL pin is a CMOS input that selects between two sampling rates. When the pin is low, the device samples at 20 Hz and uses low power. When the pin is high, the device samples at 2500 Hz and uses more power. The SEL pin can be tied directly high or low, or it can be changed during device operation. If the SEL voltage changes, the device detects the new voltage during the next tACTIVE time. 7.3.6 Hall Element Location The sensing element inside the device is in the center of the package when viewed from the top. Figure 12 shows the tolerances and side-view dimensions. X2SON Top View X2SON Side View centered 250 µm ±60 µm ±50 µm Figure 12. Hall Element Location 7.4 Device Functional Modes The DRV5012 device has two operating modes, 20 Hz and 2.5 kHz, as set by the SEL pin. In both cases the Recommended Operating Conditions must be met. 10 Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated Product Folder Links: DRV5012 DRV5012 www.ti.com SLVSDD5 – AUGUST 2017 8 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 8.1 Application Information The DRV5012 device is typically used in rotary applications for brushless DC (BLDC) motor sensors or incremental rotary encoding. To ensure reliable functionality, the magnet should apply a flux density at the sensor greater than the maximum BOP and less than the minimum BRP thresholds. It is good practice to add additional margin to account for mechanical tolerance, temperature effects, and magnet variation. 8.2 Typical Applications 8.2.1 BLDC Motor Sensors Application VBAT VBAT DRV5012 GPIOs PWM DRV5012 6 Gate Drivers & MOSFETs M DRV5012 Microcontroller 3 GPIOs Outputs SEL control GPIO Copyright © 201 7, Texas Instrumen ts Incorpor ate d Figure 13. BLDC Motor System 8.2.1.1 Design Requirements For this design example, use the parameters listed in Table 1. Table 1. Design Parameters DESIGN PARAMETER EXAMPLE VALUE Number of motor phases 3 Motor RPM 3000 Number of magnet poles on the rotor 6 Magnetic material Bonded Neodymium Peak magnetic flux density at the Hall sensors ±15 mT Battery voltage range (VBAT) 2 to 3.5 V Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated Product Folder Links: DRV5012 11 DRV5012 SLVSDD5 – AUGUST 2017 www.ti.com 8.2.1.2 Detailed Design Procedure Three-phase brushless DC motors often use 3 Hall effect latch devices to measure the electrical angle of the rotor and tell the controller how to drive the 3 wires. These wires connect to electromagnet windings, which generate magnetic fields that apply forces to the permanent magnets on the rotor. The 3 Hall sensors should be spaced across the printed-circuit board (PCB) so that they are 120° electrical degrees apart. This configuration creates six 3-bit states with equal time duration for each electrical cycle, which consists of 1 north and 1 south magnetic pole. From the center of the motor axis, the number of degrees each sensor should be spaced equals 2 / [number of poles] × 120°. In this design example, 1 sensor is placed at 0°, 1 sensor is placed 40° rotated, and 1 sensor is placed 80° rotated. Alternatively, a 3× degree offset can be added or subtracted to any sensor, meaning the third sensor could alternatively be placed at 80° – (3 × 40°) = –40°. While an ideal BLDC motor would energize the phases at the exact correct times, the DRV5012 device introduces variable lag because of the sampling architecture that achieves low power. An acceptable amount of lag can be measured by the sampling time error as a percentage of the electrical period. This design example uses 3000 RPM, which is 50 revolutions per second. Each revolution has 6 poles (3 electrical cycles), so the electrical frequency is 150 Hz, a period of 6.7 ms. The DRV5012 device in 2.5 kHz mode has a sampling period of 0.4 ms, which is 6% of the electrical period. Generally, the maximum timing error should be kept under 10% to ensure the BLDC motor spins, and timing error can reduce motor efficiency. When the motor in this example is not driven, the SEL pins of the DRV5012 devices are set to a low voltage, and the sensor outputs are monitored for changes. If a change occurs, the microcontroller wakes the system into a higher power state and takes other appropriate action. 8.2.1.3 Application Curve U Phase Voltages V W Hall 1 DRV5012 Outputs Hall 2 Hall 3 Electrical Angle Mechanical Angle 0° 0° 120° 240° 60° 360° 120° . Figure 14. 3-Phase BLDC Motor Phase Voltages and Hall Signals 12 Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated Product Folder Links: DRV5012 DRV5012 www.ti.com SLVSDD5 – AUGUST 2017 8.2.2 Incremental Rotary Encoding Application VCC S VCC DRV5012 VCC OUT SEL GND Controller GPIO GPIO GPIO N N VCC S DRV5012 VCC OUT SEL GND Copyright © 201 7, Texas Instrumen ts Incorpor ate d Figure 15. Incremental Rotary Encoding System 8.2.2.1 Design Requirements For this design example, use the parameters listed in Table 2. Table 2. Design Parameters DESIGN PARAMETER EXAMPLE VALUE RPM range 0 to 4000 Number of magnet poles 8 Magnetic material Ferrite Air gap above the Hall sensors 2.5 mm Peak magnetic flux density at the sensors ±7 mT 8.2.2.2 Detailed Design Procedure Incremental encoders are used on knobs, wheels, motors, and flow meters to measure relative rotary movement. By attaching a ring magnet to the rotating component and placing a DRV5012 device nearby, the sensor generates voltage pulses as the magnet turns. If directional information is also needed (clockwise versus counterclockwise), a second DRV5012 device can be added with a phase offset, and then the order of transitions between the two signals describes the direction. Creating this phase offset requires spacing the two sensors apart on the PCB, and an ideal 90° quadrature offset is attained when the sensors are separated by half the length of each magnet pole, plus any integer number of pole lengths. Figure 15 shows this configuration, as the sensors are 1.5 pole lengths apart. One of the sensors changes its output every 360° / 8 poles / 2 sensors = 22.5° of rotation. For reference, the TI Design TIDA-00480 uses a 66-pole magnet with changes every 2.7°. Because the DRV5012 device periodically samples the magnetic field, there is a limit to the maximum rotational speed that can be measured. Generally, the device sampling rate should be faster than 2 times the number of poles per second. In this design example, the maximum speed is 4000 RPM, which involves 533 poles per second. The DRV5012 has a minimum sampling frequency of 1665 Hz (when the SEL pin is high), which is approximately 3 × 533 poles per second. In systems where the sensor sampling rate is close to 2 times the number of poles per second, most of the samples will measure a magnetic field that is significantly lower than the peak value, since the peaks only occur when the sensor and pole are perfectly aligned. In this case, margin should be added by applying a stronger magnetic field that has peaks significantly higher than the maximum BOP of the DRV5012 device. Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated Product Folder Links: DRV5012 13 DRV5012 SLVSDD5 – AUGUST 2017 www.ti.com 8.2.2.3 Application Curve Two signals in quadrature provide movement and direction information. Each 2-bit state has unique adjacent 2-bit states for clockwise and counterclockwise. Voltage Sensor 1 Sensor 2 time Figure 16. 2-bit Quadrature Output 14 Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated Product Folder Links: DRV5012 DRV5012 www.ti.com SLVSDD5 – AUGUST 2017 8.3 Do's and Don'ts Because the Hall element is sensitive to magnetic fields that are perpendicular to the top of the package, a correct magnet orientation must be used for the sensor to detect the field. Figure 17 shows correct and incorrect orientations when using a ring magnet. CORRECT N S N N S S N S S N N S INCORRECT S N N S Figure 17. Correct and Incorrect Magnet Orientations Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated Product Folder Links: DRV5012 15 DRV5012 SLVSDD5 – AUGUST 2017 www.ti.com 9 Power Supply Recommendations The DRV5012 device is powered from 1.65-V to 5.5-V DC power supplies. A decoupling capacitor close to the device must be used to provide local energy with minimal inductance. TI recommends using a ceramic capacitor with a value of at least 0.1 µF. 10 Layout 10.1 Layout Guidelines Magnetic fields pass through most nonferromagnetic materials with no significant disturbance. Embedding Hall effect sensors within plastic or aluminum enclosures and sensing magnets on the outside is common practice. Magnetic fields also easily pass through most PCBs, which makes placing the magnet on the opposite side possible. 10.2 Layout Example VCC SEL Thermal Pad GND OUT Figure 18. Layout Example 16 Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated Product Folder Links: DRV5012 DRV5012 www.ti.com SLVSDD5 – AUGUST 2017 11 Device and Documentation Support 11.1 Device Support 11.1.1 Development Support For additional design reference, refer to the Automotive Hall Sensor Rotary Encoder TI Design (TIDA-00480). 11.2 Receiving Notification of Documentation Updates To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document. 11.3 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 11.4 Trademarks E2E is a trademark of Texas Instruments. All other trademarks are the property of their respective owners. 11.5 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 11.6 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 12 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated Product Folder Links: DRV5012 17 PACKAGE OPTION ADDENDUM www.ti.com 20-Aug-2017 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Op Temp (°C) Device Marking (4/5) DRV5012AEDMRR PREVIEW X2SON DMR 4 3000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 2AE DRV5012AEDMRT PREVIEW X2SON DMR 4 250 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 2AE (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based flame retardants must also meet the <=1000ppm threshold requirement. (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. 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Life-critical medical equipment is medical equipment where failure of such equipment would cause serious bodily injury or death (e.g., life support, pacemakers, defibrillators, heart pumps, neurostimulators, and implantables). Such equipment includes, without limitation, all medical devices identified by the U.S. Food and Drug Administration as Class III devices and equivalent classifications outside the U.S. TI may expressly designate certain products as completing a particular qualification (e.g., Q100, Military Grade, or Enhanced Product). Designers agree that it has the necessary expertise to select the product with the appropriate qualification designation for their applications and that proper product selection is at Designers’ own risk. Designers are solely responsible for compliance with all legal and regulatory requirements in connection with such selection. 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