PHILIPS BFG198 Npn 8 ghz wideband transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BFG198
NPN 8 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
1995 Sep 12
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
DESCRIPTION
BFG198
PINNING
NPN planar epitaxial transistor in a
plastic SOT223 envelope, intended
for wideband amplifier applications.
The device features a high gain and
excellent output voltage capabilities.
PIN
DESCRIPTION
1
emitter
2
base
3
emitter
4
collector
4
age
1
2
Top view
3
MSB002 - 1
Fig.1 SOT223.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−
20
V
VCEO
collector-emitter voltage
open base
−
−
10
V
IC
DC collector current
−
−
100
mA
Ptot
total power dissipation
up to Ts = 135 °C (note 1)
−
−
1
W
hFE
DC current gain
IC = 50 mA; VCE = 5 V; Tj = 25 °C
40
90
−
fT
transition frequency
IC = 50 mA; VCE = 8 V; f = 1 GHz;
Tamb = 25 °C
−
8
−
GHz
GUM
maximum unilateral power
gain
IC = 50 mA; VCE = 8 V; f = 500 MHz;
Tamb = 25 °C
−
18
−
dB
IC = 50 mA; VCE = 8 V; f = 800 MHz;
Tamb = 25 °C
−
15
−
dB
dim = −60 dB; IC = 70 mA; VCE = 8 V;
RL = 75 Ω; Tamb = 25 °C;
f(p+q−r) = 793.25 MHz
−
700
−
mV
Vo
output voltage
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
open emitter
−
20
V
collector-emitter voltage
open base
−
10
V
emitter-base voltage
open collector
−
2.5
V
−
100
mA
−
1
W
−65
+150
°C
−
175
°C
VCBO
collector-base voltage
VCEO
VEBO
IC
DC collector current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
up to Ts = 135 °C (note 1)
Note
1. Ts is the temperature at the soldering point of the collector tab.
1995 Sep 12
2
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFG198
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
thermal resistance from junction to soldering point
VALUE
UNIT
40
K/W
MAX.
UNIT
up to Ts = 135 °C (note 1)
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
−
TYP.
−
ICBO
collector cut-off current
hFE
DC current gain
IC = 50 mA; VCE = 5 V
40
90
−
Cc
collector capacitance
IE = ie = 0; VCB = 8 V; f = 1 MHz
−
1.5
−
pF
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
−
4
−
pF
Cre
feedback capacitance
IC = 0; VCE = 8 V; f = 1 MHz
−
0.8
−
pF
fT
transition frequency
IC = 50 mA; VCE = 8 V; f = 1 GHz;
Tamb = 25 °C
−
8
−
GHz
GUM
maximum unilateral power
gain; note 1
IC = 50 mA; VCE = 8 V; f = 500 MHz;
Tamb = 25 °C
−
18
−
dB
IC = 50 mA; VCE = 8 V; f = 800 MHz;
Tamb = 25 °C
−
15
−
dB
note 2
−
750
−
mV
note 3
−
700
−
mV
note 4
−
−55
−
dB
Vo
d2
output voltage
second order
intermodulation distortion
IE = 0; VCB = 5 V
MIN.
Note
100
nA
s 21 2
1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log -----------------------------------------------------------dB.
( 1 – s 11 2 ) ( 1 – s 22 2 )
2. dim = −60 dB (DIN 45004B); IC = 70 mA; VCE = 8 V; RL = 75 Ω; Tamb = 25 °C;
Vp = Vo at dim = −60 dB;
Vq = Vo −6 dB; fp = 445.25 MHz;
Vr = Vo −6 dB; fq = 453.25 MHz; fr = 455.25 MHz
measured at f(p+q−r) = 443.25 MHz.
3. dim = −60 dB (DIN 45004B); IC = 70 mA; VCE = 8 V; RL = 75 Ω; Tamb = 25 °C;
Vp = Vo at dim = −60 dB; fp = 795.25 MHz;
Vq = Vo −6 dB; fq = 803.25 MHz;
Vr = Vo −6 dB; fr = 805.25 MHz;
measured at f(p+q−r) = 793.25 MHz.
4. IC = 50 mA; VCE = 8 V; Vo = 50 dBmV;
f(p+q) = 810 MHz; fp = 250 MHz; fq = 560 MHz.
1995 Sep 12
3
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFG198
,
VCC = 8 V
handbook, full pagewidth
C5
L4
L3
VBB
C4
C3
L5
input
75 Ω
C1
L1
L6
C6
R2
R1
L2
output
75 Ω
DUT
C2
R3
R4
MBB754
Fig.2 Intermodulation distortion and second order intermodulation distortion test circuit.
List of components (see test circuit)
DESIGNATION
DESCRIPTION
VALUE
UNIT
DIMENSIONS
CATALOGUE NO.
C2
multilayer ceramic capacitor
1.2
pF
2222 851 12128
C1, C4, C6, C7
multilayer ceramic capacitor
10
nF
2222 590 08627
C3
multilayer ceramic capacitor
10
nF
2222 851 12128
C5 (note 1)
multilayer ceramic capacitor
10
nF
2222 629 08103
C8
multilayer ceramic capacitor
1.5
pF
2222 851 12158
L1 (note 1)
1.5 turns 0.4 mm copper wire
L2
microstripline
75
Ω
length 22 mm;
width 2.5 mm
L3 (note 1)
0.4 mm copper wire
≈24
nH
length 30 mm
L4 (note 1)
0.4 mm copper wire
≈3.6
nH
length 4 mm
L5
microstripline
75
Ω
length 19 mm;
width 2.5 mm
L6
Ferroxcube choke
5
µH
3122 108 20153
R1
metal film resistor
10
Ω
2322 180 73103
R2 (note 1)
metal film resistor
220
Ω
2322 180 73221
R3, R4
metal film resistor
30
Ω
2322 180 73309
int. dia. 3 mm;
winding pitch 1 mm
Note
1. Components C5, L1, L3, L4, and R2 are mounted on the underside of the PCB.
The circuit is constructed on a double copper-clad printed circuit board with PTFE dielectric (εr = 2.2);
thickness 1⁄16 inch; thickness of copper sheet 2 x 35 µm; see Fig.2.
1995 Sep 12
4
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
handbook, full pagewidth
BFG198
VBB
VCC
C4
C6
R1
L6
R3
C2
75 Ω
input
L1
L4
L2
C1
C3
C7
75 Ω
output
L5
C8
R4
C5
R2
L3
MEA968
80 mm
handbook, full pagewidth
60 mm
MEA966
80 mm
handbook, full pagewidth
60 mm
mounting
screws
M 2.5 (8x)
MEA967
Fig.3 Intermodulation distortion and second order intermodulation distortion printed-circuit board.
1995 Sep 12
5
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFG198
MBB752
MBB267
1.2
160
handbook,
halfpage
P
handbook, halfpage
tot
(W)
h FE
1.0
0.8
120
0.6
0.4
80
0.2
40
0
0
50
100
150
200
( o C)
Ts
0
40
80
120
I C (mA)
VCE = 5 V; Tj = 25 °C.
Fig.5
DC current gain as a function of collector
current.
Fig.4 Power derating curve.
MBB751
MBB499
10
1.2
handbook, halfpage
handbook, halfpage
fT
(GHz)
C re
8
(pF)
0.8
6
4
0.4
2
0
0
0
4
8
12
0
16
20
VCB (V)
IE = 0; f = 1 MHz; Tj = 25 °C.
Fig.6
1995 Sep 12
40
80
I C (mA)
120
VCE = 8 V; f = 1 GHz; Tamb = 25 °C.
Feedback capacitance as a function of
collector-base voltage.
Fig.7
6
Transition frequency as a function of
collector current.
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFG198
MBB753
40
MBB498
45
handbook, halfpage
handbook, halfpage
d im
(dB)
G UM
(dB)
50
30
55
20
60
10
65
0
102
10
103
f (MHz)
70
20
104
40
60
80
100
120
I C (mA)
VCE = 8 V; Vo = 750 mV; Tamb = 25 °C;
f(p+q−r) = 443.25 MHz.
IC = 50 mA; VCE = 8 V; Tamb = 25 °C;
Fig.9
Fig.8
Maximum gain as a function of frequency.
Intermodulation distortion as a function of
collector current.
MBB266
MBB497
45
35
handbook, halfpage
handbook, halfpage
d im
d2
(dB)
(dB)
50
40
55
45
60
50
65
55
70
20
40
60
80
60
20
100
120
I C (mA)
VCE = 8 V; Vo = 700 mV; Tamb = 25 °C;
f(p+q) = 793.25 MHz.
60
80
100
120
I C (mA)
VCE = 8 V; Vo = 50 dBmV; Tamb = 25 °C
f(p+q) = 450 MHz.
Fig.10 Intermodulation distortion as a function of
collector current.
1995 Sep 12
40
Fig.11 Second order intermodulation distortion as
a function of collector current.
7
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFG198
MBB268
35
handbook, halfpage
d2
(dB)
40
45
50
55
60
20
40
60
80
100
120
I C (mA)
VCE = 8 V; Vo = 50 dBmV; Tamb = 25 °C
f(p+q) = 810 MHz.
Fig.12 Second order intermodulation distortion as
a function of collector current.
1995 Sep 12
8
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFG198
50
handbook, full pagewidth
25
100
2 GHz
10
250
+j
10
0
25
50
100
∞
250
–j
40 MHz
250
10
100
25
MBB494
50
IC = 50 mA; VCE = 8 V; Tamb = 25 °C; Zo = 50 Ω.
Fig.13 Common emitter input reflection coefficient (S11).
90 o
handbook, full pagewidth
60 o
120 o
150 o
30 o
40 MHz
ϕ
180 o
100
80
60
40
20
0o
2 GHz
ϕ
30 o
150 o
60 o
120 o
90 o
MBB496
IC = 50 mA; VCE = 8 V; Tamb = 25 °C.
Fig.14 Common emitter forward transmission coefficient (S21).
1995 Sep 12
9
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFG198
90 o
handbook, full pagewidth
2 GHz
60 o
120 o
150 o
30 o
ϕ
0.2 0.16
180 o
0.12
0.08
0.04
0o
40 MHz
ϕ
30 o
150 o
60 o
120 o
90 o
MBB495
IC = 50 mA; VCE = 8 V; Tamb = 25 °C.
Fig.15 Common emitter reverse transmission coefficient (S12).
50
handbook, full pagewidth
25
100
10
250
2 GHz
+j
0
10
25
50
100
250
∞
–j
250
40 MHz
10
100
25
50
MBB493
IC = 50 mA; VCE = 8 V; Tamb = 25 °C; Zo = 50 Ω.
Fig.16 Common emitter output reflection coefficient (S22).
1995 Sep 12
10
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFG198
PACKAGE OUTLINE
0.95
0.85
handbook, full pagewidth
S
0.1 S
seating plane
0.32
0.24
6.7
6.3
3.1
2.9
B
4
A
0.10
0.01
16 o
max
16
3.7
3.3
1
2
10
max
0.80
0.60
2.3
4.6
Dimensions in mm.
Fig.17 SOT223.
1995 Sep 12
7.3
6.7
o
o
1.80
max
0.2 M A
11
3
0.1 M B
(4x)
MSA035 - 1
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFG198
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Short-form specification
The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1995 Sep 12
12
Similar pages