DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC549; BC550 NPN general purpose transistors Product specification Supersedes data of 1997 Jun 20 1999 Apr 22 Philips Semiconductors Product specification NPN general purpose transistors BC549; BC550 FEATURES PINNING • Low current (max. 100 mA) PIN • Low voltage (max. 45 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector • Low noise stages in audio frequency equipment. DESCRIPTION handbook, halfpage1 NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC559 and BC560. 3 2 3 2 1 MAM182 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter BC549 − 30 V BC550 − 50 V − 30 V − 45 V − 5 V collector-emitter voltage open base BC549 BC550 VEBO emitter-base voltage IC collector current (DC) − 100 mA ICM peak collector current − 200 mA IBM peak base current − 200 mA Ptot total power dissipation − 500 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C open collector Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. 1999 Apr 22 2 Philips Semiconductors Product specification NPN general purpose transistors BC549; BC550 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT 250 K/W note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER ICBO collector cut-off current IEBO emitter cut-off current hFE DC current gain BC549C; BC550C VCEsat VBEsat collector-emitter saturation voltage base-emitter saturation voltage CONDITIONS IE = 0; VCB = 30 V MIN. − TYP. − MAX. UNIT 15 nA IE = 0; VCB = 30 V; Tj = 150 °C − − 5 µA IC = 0; VEB = 5 V − − 100 nA IC = 10 µA; VCE = 5 V; see Fig.2 − 270 − IC = 2 mA; VCE = 5 V; see Fig.2 420 520 800 IC = 10 mA; IB = 0.5 mA − 90 250 mV IC = 100 mA; IB = 5 mA − 200 600 mV IC = 10 mA; IB = 0.5 mA; note 1 − 700 − mV IC = 100 mA; IB = 5 mA; note 1 − 900 − mV IC = 2 mA; VCE = 5 V; note 2 580 660 700 mV VBE base-emitter voltage IC = 10 mA; VCE = 5 V; note 2 − − 770 mV Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − 1.5 − pF Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 11 − pF fT transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz 100 − − MHz F noise figure IC = 200 µA; VCE = 5 V; RS = 2 kΩ; f = 10 Hz to 15.7 kHz − − 4 dB IC = 200 µA; VCE = 5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz − − 4 dB Notes 1. VBEsat decreases by about 1.7 mV/K with increasing temperature. 2. VBE decreases by about 2 mV/K with increasing temperature. 1999 Apr 22 3 Philips Semiconductors Product specification NPN general purpose transistors BC549; BC550 MBH725 600 handbook, full pagewidth VCE = 5 V hFE 400 200 0 10−2 10−1 1 10 BC549C; BC550C. Fig.2 DC current gain; typical values. 1999 Apr 22 4 102 IC (mA) 103 Philips Semiconductors Product specification NPN general purpose transistors BC549; BC550 PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) mm 5.2 5.0 0.48 0.40 0.66 0.56 0.45 0.40 4.8 4.4 1.7 1.4 4.2 3.6 2.54 1.27 14.5 12.7 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 1999 Apr 22 REFERENCES IEC JEDEC EIAJ TO-92 SC-43 5 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification NPN general purpose transistors BC549; BC550 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Apr 22 6 Philips Semiconductors Product specification NPN general purpose transistors BC549; BC550 NOTES 1999 Apr 22 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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