CY7C1561V18 CY7C1576V18 CY7C1563V18 CY7C1565V18 72-Mbit QDR™-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) Features Configurations ■ Separate independent read and write data ports ❐ Supports concurrent transactions With Read Cycle Latency of 2.5 cycles: CY7C1561V18 – 8M x 8 CY7C1576V18 – 8M x 9 CY7C1563V18 – 4M x 18 CY7C1565V18 – 2M x 36 ■ 300 MHz to 400 MHz clock for high bandwidth ■ 4-Word Burst for reducing address bus frequency ■ Double Data Rate (DDR) interfaces on both Read and Write Ports (data transferred at 800 MHz) at 400 MHz Functional Description ■ Read latency of 2.5 clock cycles ■ Two input clocks (K and K) for precise DDR timing ❐ SRAM uses rising edges only ■ Echo clocks (CQ and CQ) simplify data capture in high speed systems ■ Data valid pin (QVLD) to indicate valid data on the output ■ Single multiplexed address input bus latches address inputs for both Read and Write Ports ■ Separate port selects for depth expansion ■ Synchronous internally self-timed writes ■ Available in x8, x9, x18, and x36 configurations ■ Full data coherency providing most current data ■ Core VDD = 1.8V ± 0.1V; IO VDDQ = 1.4V to VDD[1] ■ HSTL inputs and Variable drive HSTL output buffers ■ Available in 165-ball FBGA package (15 x 17 x 1.4 mm) ■ Offered in both Pb-free and non Pb-free packages The CY7C1561V18, CY7C1576V18, CY7C1563V18, and CY7C1565V18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR-II+ architecture. Similar to QDR-II architecture, QDR-II+ SRAMs consists of two separate ports to access the memory array. The Read Port has dedicated data outputs to support read operations and the Write Port has dedicated data inputs to support write operations. QDR-II+ architecture has separate data inputs and data outputs to completely eliminate the need to “turn-around” the data bus required with common IO devices. Access to each port is accomplished through a common address bus. Addresses for read and write addresses are latched on alternate rising edges of the input (K) clock. Accesses to the QDR-II+ Read and Write Ports are completely independent of one another. In order to maximize data throughput, both Read and Write Ports are equipped with Double Data Rate (DDR) interfaces. Each address location is associated with four 8-bit words (CY7C1561V18), 9-bit words (CY7C1576V18), 18-bit words (CY7C1563V18), or 36-bit words (CY7C1565V18) that burst sequentially into or out of the device. Since data can be transferred into and out of the device on every rising edge of both input clocks (K and K), memory bandwidth is maximized while simplifying system design by eliminating bus “turn-arounds”. ■ JTAG 1149.1 compatible test access port ■ Delay Lock Loop (DLL) for accurate data placement Depth expansion is accomplished with port selects for each port. Port selects allow each port to operate independently. All synchronous inputs pass through input registers controlled by the K or K input clocks. All data outputs pass through output registers controlled by the K or K input clocks. Writes are conducted with on-chip synchronous self-timed write circuitry. Selection Guide 400 MHz Maximum Operating Frequency Maximum Operating Current 375 MHz 333 MHz 300 MHz Unit 400 375 333 300 MHz x8 1400 1300 1200 1100 mA x9 1400 1300 1200 1100 x18 1400 1300 1200 1100 x36 1400 1300 1200 1100 Note 1. The QDR consortium specification for VDDQ is 1.5V + 0.1V. The Cypress QDR devices exceed the QDR consortium specification and are capable of supporting VDDQ = 1.4V to VDD. Cypress Semiconductor Corporation Document Number: 001-05384 Rev. *E • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised July 24, 2007 CY7C1561V18 CY7C1576V18 CY7C1563V18 CY7C1565V18 Logic Block Diagram (CY7C1561V18) DOFF Address Register Read Add. Decode Write Reg 2M x 8 Array K CLK Gen. Write Reg 2M x 8 Array K Write Reg 2M x 8 Array Address Register Write Reg 2M x 8 Array A(20:0) 21 8 Write Add. Decode D[7:0] Control Logic 21 A(20:0) RPS Read Data Reg. CQ 32 VREF WPS NWS[1:0] 16 Control Logic Reg. 16 Reg. CQ Reg. 8 8 8 8 8 Q[7:0] QVLD Logic Block Diagram (CY7C1576V18) DOFF Address Register Read Add. Decode Write Reg 2M x 9 Array K CLK Gen. Write Reg 2M x 9 Array K Write Reg 2M x 9 Array Address Register Write Reg 2M x 9 Array A(20:0) 21 9 Write Add. Decode D[8:0] Control Logic 21 A(20:0) RPS Read Data Reg. CQ 36 VREF WPS BWS[0] 18 Control Logic 18 Reg. Reg. Reg. 9 9 9 9 CQ 9 Q[8:0] QVLD Document Number: 001-05384 Rev. *E Page 2 of 28 CY7C1561V18 CY7C1576V18 CY7C1563V18 CY7C1565V18 Logic Block Diagram (CY7C1563V18) DOFF Address Register Read Add. Decode Write Reg 1M x 18 Array K CLK Gen. Write Reg 1M x 18 Array K Write Reg 1M x 18 Array Address Register Write Reg 1M x 18 Array A(19:0) 20 18 Write Add. Decode D[17:0] Control Logic 20 A(19:0) RPS Read Data Reg. CQ 72 VREF WPS BWS[1:0] 36 Control Logic Reg. 36 Reg. CQ Reg. 18 18 18 18 18 Q[17:0] QVLD Logic Block Diagram (CY7C1565V18) DOFF Address Register Read Add. Decode Write Reg 512K x 36 Array K CLK Gen. Write Reg 512K x 36 Array K Write Reg 512K x 36 Array Address Register Write Reg 512K x 36 Array A(18:0) 19 36 Write Add. Decode D[35:0] Control Logic 19 A(18:0) RPS Read Data Reg. CQ 144 VREF WPS BWS[3:0] 72 Control Logic 72 Reg. Reg. Reg. 36 36 36 36 CQ 36 Q[35:0] QVLD Document Number: 001-05384 Rev. *E Page 3 of 28 CY7C1561V18 CY7C1576V18 CY7C1563V18 CY7C1565V18 Pin Configuration The Pin Configuration for CY7C1561V18, CY7C1563V18, and CY7C1565V18 follows.[2] 165-Ball FBGA (15 x 17 x 1.4 mm) Pinout CY7C1561V18 (8M x 8) A 1 2 3 4 5 6 7 8 9 10 11 CQ A A WPS NWS1 K NC/144M RPS A A CQ B NC NC NC A NC/288M K NWS0 A NC NC Q3 C NC NC NC VSS A NC A VSS NC NC D3 D NC D4 NC VSS VSS VSS VSS VSS NC NC NC E NC NC Q4 VDDQ VSS VSS VSS VDDQ NC D2 Q2 F NC NC NC VDDQ VDD VSS VDD VDDQ NC NC NC G NC D5 Q5 VDDQ VDD VSS VDD VDDQ NC NC NC H DOFF VREF VDDQ VDDQ VDD VSS VDD VDDQ VDDQ VREF ZQ J NC NC NC VDDQ VDD VSS VDD VDDQ NC Q1 D1 K NC NC NC VDDQ VDD VSS VDD VDDQ NC NC NC L NC Q6 D6 VDDQ VSS VSS VSS VDDQ NC NC Q0 M NC NC NC VSS VSS VSS VSS VSS NC NC D0 N NC D7 NC VSS A A A VSS NC NC NC P NC NC Q7 A A QVLD A A NC NC NC R TDO TCK A A A NC A A A TMS TDI CY7C1576V18 (8M x 9) 1 2 3 4 5 6 7 8 9 10 11 A CQ A A WPS NC K NC/144M RPS A A CQ B NC NC NC A NC/288M K BWS0 A NC NC Q4 C NC NC NC VSS A NC A VSS NC NC D4 D NC D5 NC VSS VSS VSS VSS VSS NC NC NC E NC NC Q5 VDDQ VSS VSS VSS VDDQ NC D3 Q3 F NC NC NC VDDQ VDD VSS VDD VDDQ NC NC NC G NC D6 Q6 VDDQ VDD VSS VDD VDDQ NC NC NC H DOFF VREF VDDQ VDDQ VDD VSS VDD VDDQ VDDQ VREF ZQ J NC NC NC VDDQ VDD VSS VDD VDDQ NC Q2 D2 K NC NC NC VDDQ VDD VSS VDD VDDQ NC NC NC L NC Q7 D7 VDDQ VSS VSS VSS VDDQ NC NC Q1 M NC NC NC VSS VSS VSS VSS VSS NC NC D1 N NC D8 NC VSS A A A VSS NC NC NC P NC NC Q8 A A QVLD A A NC D0 Q0 R TDO TCK A A A NC A A A TMS TDI Note 2. NC/144M and NC/288M are not connected to the die and can be tied to any voltage level. Document Number: 001-05384 Rev. *E Page 4 of 28 CY7C1561V18 CY7C1576V18 CY7C1563V18 CY7C1565V18 Pin Configuration The Pin Configuration for CY7C1561V18, CY7C1563V18, and CY7C1565V18 follows.[2] (continued) 165-Ball FBGA (15 x 17 x 1.4 mm) Pinout CY7C1563V18 (4M x 18) A 1 2 3 4 5 6 7 8 9 10 11 CQ NC/144M A WPS BWS1 K NC/288M RPS A A CQ B NC Q9 D9 A NC K BWS0 A NC NC Q8 C NC NC D10 VSS A NC A VSS NC Q7 D8 D NC D11 Q10 VSS VSS VSS VSS VSS NC NC D7 E NC NC Q11 VDDQ VSS VSS VSS VDDQ NC D6 Q6 F NC Q12 D12 VDDQ VDD VSS VDD VDDQ NC NC Q5 G NC D13 Q13 VDDQ VDD VSS VDD VDDQ NC NC D5 H DOFF VREF VDDQ VDDQ VDD VSS VDD VDDQ VDDQ VREF ZQ J NC NC D14 VDDQ VDD VSS VDD VDDQ NC Q4 D4 K NC NC Q14 VDDQ VDD VSS VDD VDDQ NC D3 Q3 L NC Q15 D15 VDDQ VSS VSS VSS VDDQ NC NC Q2 M NC NC D16 VSS VSS VSS VSS VSS NC Q1 D2 N NC D17 Q16 VSS A A A VSS NC NC D1 P NC NC Q17 A A QVLD A A NC D0 Q0 R TDO TCK A A A NC A A A TMS TDI CY7C1565V18 (2M x 36) 1 2 3 4 5 6 7 8 9 10 11 A CQ NC/288M A WPS BWS2 K BWS1 RPS A NC/144M CQ B Q27 Q18 D18 A BWS3 K BWS0 A D17 Q17 Q8 C D27 Q28 D19 VSS A NC A VSS D16 Q7 D8 D D28 D20 Q19 VSS VSS VSS VSS VSS Q16 D15 D7 E Q29 D29 Q20 VDDQ VSS VSS VSS VDDQ Q15 D6 Q6 F Q30 Q21 D21 VDDQ VDD VSS VDD VDDQ D14 Q14 Q5 G D30 D22 Q22 VDDQ VDD VSS VDD VDDQ Q13 D13 D5 H DOFF VREF VDDQ VDDQ VDD VSS VDD VDDQ VDDQ VREF ZQ J D31 Q31 D23 VDDQ VDD VSS VDD VDDQ D12 Q4 D4 K Q32 D32 Q23 VDDQ VDD VSS VDD VDDQ Q12 D3 Q3 L Q33 Q24 D24 VDDQ VSS VSS VSS VDDQ D11 Q11 Q2 M D33 Q34 D25 VSS VSS VSS VSS VSS D10 Q1 D2 N D34 D26 Q25 VSS A A A VSS Q10 D9 D1 P Q35 D35 Q26 A A QVLD A A Q9 D0 Q0 R TDO TCK A A A NC A A A TMS TDI Document Number: 001-05384 Rev. *E Page 5 of 28 CY7C1561V18 CY7C1576V18 CY7C1563V18 CY7C1565V18 Pin Definitions Pin Name IO Pin Description D[x:0] InputData input signals. Sampled on the rising edge of K and K clocks during valid write operations. Synchronous CY7C1561V18 − D[7:0] CY7C1576V18 − D[8:0] CY7C1563V18 − D[17:0] CY7C1565V18 − D[35:0] WPS InputWrite Port Select, Active LOW. Sampled on the rising edge of the K clock. When asserted active, Synchronous a write operation is initiated. Deasserting deselects the Write Port. When the Write Port is deselected D[x:0] is ignored. NWS0, NWS1, InputNibble Write Select 0, 1, Active LOW (CY7C1561V18 Only). Sampled on the rising edge of the K Synchronous and K clocks when write operations are active. Used to select which nibble is written into the device during the current portion of the write operations. NWS0 controls D[3:0] and NWS1 controls D[7:4]. All the nibble Write Selects are sampled on the same edge as the data. The corresponding nibble of data is ignored by deselecting a nibble write select and is not written into the device. BWS0, BWS1, BWS2, BWS3 InputByte Write Select 0, 1, 2, and 3 − Active LOW. Sampled on the rising edge of the K and K clocks Synchronous during write operations. Used to select which byte is written into the device during the current portion of the write operations. Bytes not written remain unaltered. CY7C1576V18 − BWS0 controls D[8:0] CY7C1563V18 − BWS0 controls D[8:0] and BWS1 controls D[17:9]. CY7C1565V18 − BWS0 controls D[8:0], BWS1 controls D[17:9], BWS2 controls D[26:18] and BWS3 controls D[35:27]. All the Byte Write Selects are sampled on the same edge as the data. Deselecting a Byte Write Select causes the corresponding byte of data to be ignored and not written into the device. A InputAddress Inputs. Sampled on the rising edge of the K clock during active read and write operations. Synchronous These address inputs are multiplexed for both read and write operations. Internally, the device is organized as 8M x 8 (4 arrays each of 2M x 8) for CY7C1561V18, 8M x 9 (4 arrays each of 2M x 9) for CY7C1576V18, 4M x 18 (4 arrays each of 1M x 18) for CY7C1563V18 and 2M x 36 (4 arrays each of 512K x 36) for CY7C1565V18. Therefore, only 21 address inputs are needed to access the entire memory array of CY7C1561V18 and CY7C1576V18, 20 address inputs for CY7C1563V18, and 19 address inputs for CY7C1565V18. These inputs are ignored when the appropriate port is deselected. Q[x:0] OutputsData Output signals. These pins drive out the requested data during a read operation. Valid data is Synchronous driven out on the rising edge of both the K and K clocks during read operations or K and K. When the Read Port is deselected, Q[x:0] are automatically tri-stated. CY7C1561V18 − Q[7:0] CY7C1576V18 − Q[8:0] CY7C1563V18 − Q[17:0] CY7C1565V18 − Q[35:0] RPS InputRead Port Select, Active LOW. Sampled on the rising edge of Positive Input Clock (K). When active, Synchronous a read operation is initiated. Deasserting causes the Read Port to be deselected. When deselected, the pending access is allowed to complete and the output drivers are automatically tri-stated following the next rising edge of the K clock. Each read access consists of a burst of four sequential transfers. QVLD Valid output indicator Valid Output Indicator. The Q Valid indicates valid output data. QVLD is edge aligned with CQ and CQ. K InputClock Positive Input Clock Input. The rising edge of K is used to capture synchronous inputs to the device and to drive out data through Q[x:0] when in single clock mode. All accesses are initiated on the rising edge of K. K InputClock Negative Input Clock Input. K is used to capture synchronous inputs being presented to the device and to drive out data through Q[x:0] when in single clock mode. Echo Clock Synchronous Echo Clock Outputs. This is a free running clock and is synchronized to the input clock (K) of the QDR-II+. The timings for the echo clocks are shown in the “Switching Characteristics” on page 22. CQ Document Number: 001-05384 Rev. *E Page 6 of 28 CY7C1561V18 CY7C1576V18 CY7C1563V18 CY7C1565V18 Pin Definitions Pin Name (continued) IO Pin Description CQ Echo Clock Synchronous Echo Clock Outputs. This is a free running clock and is synchronized to the input clock (K) of the QDR-II+. The timings for the echo clocks are shown in the “Switching Characteristics” on page 22. ZQ Input Output Impedance Matching Input. This input is used to tune the device outputs to the system data bus impedance. CQ, CQ and Q[x:0] output impedance are set to 0.2 x RQ, where RQ is a resistor connected between ZQ and ground. Alternately, this pin can be connected directly to VDDQ, which enables the minimum impedance mode. This pin cannot be connected directly to GND or left unconnected. DOFF Input DLL Turn Off-Active LOW. Connecting this pin to ground turns off the DLL inside the device.The timings in the DLL turned off operation are different from those listed in this data sheet. For normal operation, this pin can be connected to a pull up through a 10 KΩ or less pull up resistor. The device behaves in QDR-I mode when the DLL is turned off. In this mode, the device can be operated at a frequency of up to 167 MHz with QDR-I timing. TDO Output TCK Input TCK pin for JTAG. TDI Input TDI pin for JTAG. TMS Input TMS pin for JTAG. NC N/A Not connected to the die. Can be tied to any voltage level. NC/144M N/A Not connected to the die. Can be tied to any voltage level. NC/288M N/A Not connected to the die. Can be tied to any voltage level. VREF VDD VSS VDDQ InputReference TDO for JTAG. Reference Voltage Input. Static input used to set the reference level for HSTL inputs and Outputs as well as AC measurement points. Power Supply Power supply inputs to the core of the device. Ground Ground for the device. Power Supply Power supply inputs for the outputs of the device. Functional Overview The CY7C1561V18, CY7C1576V18, CY7C1563V18, and CY7C1565V18 are synchronous pipelined Burst SRAMs equipped with both a Read Port and a Write Port. The Read Port is dedicated to read operations and the Write Port is dedicated to write operations. Data flows into the SRAM through the Write Port and out through the Read Port. These devices multiplex the address inputs in order to minimize the number of address pins required. By having separate Read and Write Ports, the QDR-II+ completely eliminates the need to “turn-around” the data bus and avoids any possible data contention, thereby simplifying system design. Each access consists of four 8-bit data transfers in the case of CY7C1561V18, four 9-bit data transfers in the case of CY7C1576V18, four 18-bit data transfers in the case of CY7C1563V18, and four 36-bit data transfers in the case of CY7C1565V18, in two clock cycles. Accesses for both ports are initiated on the Positive Input Clock (K). All synchronous input and output timing are referenced from the rising edge of the input clocks (K and K). All synchronous data inputs (D[x:0]) inputs pass through input registers controlled by the input clocks (K and K). All Document Number: 001-05384 Rev. *E synchronous data outputs (Q[x:0]) outputs pass through output registers controlled by the rising edge of the input clocks (K and K) as well. All synchronous control (RPS, WPS, BWS[x:0]) inputs pass through input registers controlled by the rising edge of the input clocks (K and K). CY7C1563V18 is described in the following sections. The same basic descriptions apply to CY7C1561V18, CY7C1576V18, and CY7C1565V18. Read Operations The CY7C1563V18 is organized internally as 4 arrays of 1M x 18. Accesses are completed in a burst of four sequential 18-bit data words. Read operations are initiated by asserting RPS active at the rising edge of the Positive Input Clock (K). The address presented to Address inputs are stored in the Read Address Register. Following the next two K clock rise, the corresponding lowest order 18-bit word of data is driven onto the Q[17:0] using K as the output timing reference. On the subsequent rising edge of K the next 18-bit data word is driven onto the Q[17:0]. This process continues until all four 18-bit data words have been driven out onto Q[17:0]. The requested data is valid Page 7 of 28 CY7C1561V18 CY7C1576V18 CY7C1563V18 CY7C1565V18 0.45*ns from the rising edge of the input clock (K or K). In order to maintain the internal logic, each read access must be allowed to complete. Each read access consists of four 18-bit data words and takes 2 clock cycles to complete. Therefore, read accesses to the device can not be initiated on two consecutive K clock rises. The internal logic of the device ignores the second read request. Read accesses can be initiated on every other K clock rise. Doing so pipelines the data flow such that data is transferred out of the device on every rising edge of the input clocks (K and K). When the Read Port is deselected, the CY7C1563V18 first completes the pending read transactions. Synchronous internal circuitry automatically tri-states the outputs following the next rising edge of the Positive Input Clock (K). This allows for a seamless transition between devices without the insertion of wait states in a depth expanded memory. Write Operations Write operations are initiated by asserting WPS active at the rising edge of the Positive Input Clock (K). On the following K clock rise the data presented to D[17:0] is latched and stored into the lower 18-bit Write Data Register, provided BWS[1:0] are both asserted active. On the subsequent rising edge of the Negative Input Clock (K) the information presented to D[17:0] is also stored into the Write Data Register, provided BWS[1:0] are both asserted active. This process continues for one more cycle until four 18-bit words (a total of 72 bits) of data are stored in the SRAM. The 72 bits of data are then written into the memory array at the specified location. Therefore, write accesses to the device can not be initiated on two consecutive K clock rises. The internal logic of the device ignores the second write request. Write accesses can be initiated on every other rising edge of the Positive Input Clock (K). Doing so pipelines the data flow such that 18 bits of data can be transferred into the device on every rising edge of the input clocks (K and K). When deselected, the Write Port ignores all inputs after the pending write operations have been completed. Byte Write Operations Byte Write operations are supported by the CY7C1563V18. A write operation is initiated as described in the “Write Operations” section above. The bytes that are written are determined by BWS0 and BWS1, which are sampled with each set of 18-bit data words. Asserting the appropriate Byte Write Select input during the data portion of a write allows the data being presented to be latched and written into the device. Deasserting the Byte Write Select input during the data portion of a write allows the data stored in the device for that byte to remain unaltered. This feature can be used to simplify Read/Modify/Write operations to a Byte Write operation. Concurrent Transactions The Read and Write Ports on the CY7C1563V18 operate completely independently of one another. Since each port latches the address inputs on different clock edges, the user can read or write to any location, regardless of the transaction on the other port. If the ports access the same location when a read follows a write in successive clock cycles, the SRAM delivers the most recent information associated with the specified address location. This includes forwarding data from a write cycle that was initiated on the previous K clock rise. Document Number: 001-05384 Rev. *E Read accesses and write access must be scheduled such that one transaction is initiated on any clock cycle. If both ports are selected on the same K clock rise, the arbitration depends on the previous state of the SRAM. If both ports were deselected, the Read Port takes priority. If a read was initiated on the previous cycle, the Write Port assumes priority (since read operations can not be initiated on consecutive cycles). If a write was initiated on the previous cycle, the Read Port assumes priority (since write operations can not be initiated on consecutive cycles). Therefore, asserting both port selects active from a deselected state results in alternating read and write operations being initiated, with the first access being a read. Depth Expansion The CY7C1563V18 has a port select input for each port. This allows for easy depth expansion. Both port selects are sampled on the rising edge of the Positive Input Clock only (K). Each port select input can deselect the specified port. Deselecting a port does not affect the other port. All pending transactions (read and write) are completed prior to the device being deselected. Programmable Impedance An external resistor, RQ, must be connected between the ZQ pin on the SRAM and VSS to allow the SRAM to adjust its output driver impedance. The value of RQ must be 5X the value of the intended line impedance driven by the SRAM, The allowable range of RQ to guarantee impedance matching with a tolerance of ±15% is between 175Ω and 350Ω, with VDDQ = 1.5V. The output impedance is adjusted every 1024 cycles upon powerup to account for drifts in supply voltage and temperature. Echo Clocks Echo clocks are provided on the QDR-II+ to simplify data capture on high speed systems. Two echo clocks are generated by the QDR-II+. CQ is referenced with respect to K and CQ is referenced with respect to K. These are free running clocks and are synchronized to the input clock of the QDR-II+. The timings for the echo clocks are shown in “Switching Characteristics” on page 22. Valid Data Indicator (QVLD) QVLD is provided on the QDR-II+ to simplify data capture on high speed systems. The QVLD is generated by the QDR-II+ device along with Data output. This signal is also edge-aligned with the echo clock and follows the timing of any data pin. This signal is asserted half a cycle before valid data arrives. DLL These chips utilize a Delay Lock Loop (DLL) that is designed to function between 120 MHz and the specified maximum clock frequency. The DLL may be disabled by applying ground to the DOFF pin. When the DLL is turned off, the device behaves in DDR-I mode (with 1.0 cycle latency and a longer access time). For more information, refer to the application note, “DLL Considerations in QDRII/DDRII/QDRII+/DDRII+”. The DLL can also be reset by slowing or stopping the input clocks K and K for a minimum of 30ns. However, it is not necessary for the DLL to be reset in order to lock to the desired frequency. During Power up, when the DOFF is tied HIGH, the DLL gets locked after 2048 cycles of stable clock. Page 8 of 28 CY7C1561V18 CY7C1576V18 CY7C1563V18 CY7C1565V18 Application Example Figure 1 shows four QDR-II+ used in an application. Figure 1. Application Example ZQ CQ/CQ SRAM #1 Q D A RPS WPS BWS K K Vt R RQ = 250ohms ZQ CQ/CQ SRAM #4 Q RPS WPS BWS K K D A DATA IN DATA OUT Address R R BUS MASTER RPS (CPU or ASIC) WPS RQ = 250ohms Vt Vt BWS CLKIN/CLKIN Source K Source K R = 50ohms, Vt = VDDQ /2 Truth Table The truth table for CY7C1561V18, CY7C1563V18, and CY7C1565V18 follows.[3, 4, 5, 6, 7, 8] Operation K RPS WPS DQ DQ DQ DQ Write Cycle: L-H Load address on the rising edge of K; input write data on two consecutive K and K rising edges. H[9] L[10] D(A) at K(t+1) ↑ D(A+1) at K(t+1) ↑ D(A+2) at K(t+2) ↑ D(A + 3) at K(t +2) ↑ L-H Read Cycle: (2.5 cycle Latency) Load address on the rising edge of K; wait two and a half cycles; read data on two consecutive K and K rising edges. L[10] X Q(A) at K(t+2)↑ Q(A+1) at K(t+3) ↑ Q(A+2) at K(t+3)↑ Q(A + 3) at K(t + 4) ↑ NOP: No Operation L-H H H D=X Q = High-Z D=X Q = High-Z D=X Q = High-Z D=X Q = High-Z Standby: Clock Stopped Stopped X X Previous State Previous State Previous State Previous State Notes 3. X = “Don't Care,” H = Logic HIGH, L = Logic LOW, ↑represents rising edge. 4. Device powers up deselected with the outputs in a tri-state condition. 5. “A” represents address location latched by the devices when transaction was initiated. A + 1, A + 2, and A +3 represents the address sequence in the burst. 6. “t” represents the cycle at which a read/write operation is started. t + 1, t + 2, and t + 3 are the first, second and third clock cycles respectively succeeding the “t” clock cycle. 7. Data inputs are registered at K and K rising edges. Data outputs are delivered on K and K rising edges also. 8. It is recommended that K = K = HIGH when clock is stopped. This is not essential, but permits most rapid restart by overcoming transmission line charging symmetrically. 9. If this signal was LOW to initiate the previous cycle, this signal becomes a “Don’t Care” for this operation. 10. This signal was HIGH on previous K clock rise. Initiating consecutive read or write operations on consecutive K clock rises is not permitted. The device ignores the second read or write request. Document Number: 001-05384 Rev. *E Page 9 of 28 CY7C1561V18 CY7C1576V18 CY7C1563V18 CY7C1565V18 Write Cycle Descriptions The write cycle description table for CY7C1561V18 and CY7C1563V18 follows. [3, 11] BWS0/ BWS1/ K K L L–H – L L – L H L–H L H – H L L–H H L – H H L–H H H – NWS0 NWS1 L Comments During the data portion of a write sequence : CY7C1561V18 − both nibbles (D[7:0]) are written into the device, CY7C1563V18 − both bytes (D[17:0]) are written into the device. L-H During the data portion of a write sequence : CY7C1561V18 − both nibbles (D[7:0]) are written into the device, CY7C1563V18 − both bytes (D[17:0]) are written into the device. – During the data portion of a write sequence : CY7C1561V18 − only the lower nibble (D[3:0]) is written into the device, D[7:4] remains unaltered. CY7C1563V18 − only the lower byte (D[8:0]) is written into the device, D[17:9] remains unaltered. L–H During the data portion of a write sequence : CY7C1561V18 − only the lower nibble (D[3:0]) is written into the device, D[7:4] remains unaltered. CY7C1563V18 − only the lower byte (D[8:0]) is written into the device, D[17:9] remains unaltered. – During the data portion of a write sequence : CY7C1561V18 − only the upper nibble (D[7:4]) is written into the device, D[3:0] remains unaltered. CY7C1563V18 − only the upper byte (D[17:9]) is written into the device, D[8:0] remains unaltered. L–H During the data portion of a write sequence : CY7C1561V18 − only the upper nibble (D[7:4]) is written into the device, D[3:0] remains unaltered. CY7C1563V18 − only the upper byte (D[17:9]) is written into the device, D[8:0] remains unaltered. – No data is written into the devices during this portion of a write operation. L–H No data is written into the devices during this portion of a write operation. Write Cycle Descriptions The write cycle description table for CY7C1576V18 follows. [3, 11] BWS0 K K L L–H – During the Data portion of a write sequence, the single byte (D[8:0]) is written into the device. L – L–H During the Data portion of a write sequence, the single byte (D[8:0]) is written into the device. H L–H – No data is written into the device during this portion of a write operation. H – L–H No data is written into the device during this portion of a write operation. Note 11. Assumes a write cycle was initiated per the Write Cycle Descriptions table. NWS0, NWS1, BWS0, BWS1, BWS2, and BWS3 can be altered on different portions of a write cycle, as long as the setup and hold requirements are achieved. Document Number: 001-05384 Rev. *E Page 10 of 28 CY7C1561V18 CY7C1576V18 CY7C1563V18 CY7C1565V18 Write Cycle Descriptions The write cycle description table for CY7C1565V18 follows. [3, 11] BWS0 BWS1 BWS2 BWS3 K K Comments L L L L L–H – During the Data portion of a write sequence, all four bytes (D[35:0]) are written into the device. L L L L – L H H H L–H L H H H – H L H H L–H H L H H – H H L H L–H H H L H – H H H L L–H H H H L – H H H H L–H H H H H – Document Number: 001-05384 Rev. *E L–H During the Data portion of a write sequence, all four bytes (D[35:0]) are written into the device. – During the Data portion of a write sequence, only the lower byte (D[8:0]) is written into the device. D[35:9] remains unaltered. L–H During the Data portion of a write sequence, only the lower byte (D[8:0]) is written into the device. D[35:9] remains unaltered. – During the Data portion of a write sequence, only the byte (D[17:9]) is written into the device. D[8:0] and D[35:18] remains unaltered. L–H During the Data portion of a write sequence, only the byte (D[17:9]) is written into the device. D[8:0] and D[35:18] remains unaltered. – During the Data portion of a write sequence, only the byte (D[26:18]) is written into the device. D[17:0] and D[35:27] remains unaltered. L–H During the Data portion of a write sequence, only the byte (D[26:18]) is written into the device. D[17:0] and D[35:27] remains unaltered. – During the Data portion of a write sequence, only the byte (D[35:27]) is written into the device. D[26:0] remains unaltered. L–H During the Data portion of a write sequence, only the byte (D[35:27]) is written into the device. D[26:0] remains unaltered. – No data is written into the device during this portion of a write operation. L–H No data is written into the device during this portion of a write operation. Page 11 of 28 CY7C1561V18 CY7C1576V18 CY7C1563V18 CY7C1565V18 IEEE 1149.1 Serial Boundary Scan (JTAG) These SRAMs incorporate a serial boundary scan test access port (TAP) in the FBGA package. This part is fully compliant with IEEE Standard #1149.1-2001. The TAP operates using JEDEC standard 1.8V IO logic levels. Disabling the JTAG Feature It is possible to operate the SRAM without using the JTAG feature. To disable the TAP controller, TCK must be tied LOW (VSS) to prevent clocking of the device. TDI and TMS are internally pulled up and may be unconnected. They may alternately be connected to VDD through a pull up resistor. TDO must be left unconnected. Upon power up, the device comes up in a reset state which does not interfere with the operation of the device. Test Access Port–Test Clock The test clock is used only with the TAP controller. All inputs are captured on the rising edge of TCK. All outputs are driven from the falling edge of TCK. Test Mode Select The TMS input is used to give commands to the TAP controller and is sampled on the rising edge of TCK. It is allowable to leave this pin unconnected if the TAP is not used. The pin is pulled up internally, resulting in a logic HIGH level. Test Data-In (TDI) The TDI pin is used to serially input information into the registers and can be connected to the input of any of the registers. The register between TDI and TDO is chosen by the instruction that is loaded into the TAP instruction register. For information on loading the instruction register, see the “TAP Controller State Diagram” on page 14. TDI is internally pulled up and can be unconnected if the TAP is unused in an application. TDI is connected to the most significant bit (MSB) on any register. Instruction Register Three-bit instructions can be serially loaded into the instruction register. This register is loaded when it is placed between the TDI and TDO pins as shown in the “TAP Controller Block Diagram” on page 15. Upon power up, the instruction register is loaded with the IDCODE instruction. It is also loaded with the IDCODE instruction if the controller is placed in a reset state as described in the previous section. When the TAP controller is in the Capture IR state, the two least significant bits are loaded with a binary “01” pattern to allow for fault isolation of the board level serial test path. Bypass Register To save time when serially shifting data through registers, it is sometimes advantageous to skip certain chips. The bypass register is a single-bit register that can be placed between TDI and TDO pins. This allows data to be shifted through the SRAM with minimal delay. The bypass register is set LOW (VSS) when the BYPASS instruction is executed. Boundary Scan Register The boundary scan register is connected to all of the input and output pins on the SRAM. Several no connect (NC) pins are also included in the scan register to reserve pins for higher density devices. The boundary scan register is loaded with the contents of the RAM Input and Output ring when the TAP controller is in the Capture-DR state and is then placed between the TDI and TDO pins when the controller is moved to the Shift-DR state. The EXTEST, SAMPLE/PRELOAD and SAMPLE Z instructions can be used to capture the contents of the Input and Output ring. “Boundary Scan Order” on page 18 show the order in which the bits are connected. Each bit corresponds to one of the bumps on the SRAM package. The MSB of the register is connected to TDI, and the LSB is connected to TDO. Test Data-Out (TDO) Identification (ID) Register The TDO output pin is used to serially clock data-out from the registers. The output is active depending upon the current state of the TAP state machine (see “Instruction Codes” on page 17). The output changes on the falling edge of TCK. TDO is connected to the least significant bit (LSB) of any register. The ID register is loaded with a vendor-specific, 32-bit code during the Capture-DR state when the IDCODE command is loaded in the instruction register. The IDCODE is hardwired into the SRAM and can be shifted out when the TAP controller is in the Shift-DR state. The ID register has a vendor code and other information described in the “Identification Register Definitions” on page 17. Performing a TAP Reset A Reset is performed by forcing TMS HIGH (VDD) for five rising edges of TCK. This RESET does not affect the operation of the SRAM and may be performed while the SRAM is operating. At power up, the TAP is reset internally to ensure that TDO comes up in a high-Z state. TAP Instruction Set TAP Registers Eight different instructions are possible with the three-bit instruction register. All combinations are listed in the “Instruction Codes” on page 18. Three of these instructions are listed as RESERVED and must not be used. The other five instructions are described in detail below. Registers are connected between the TDI and TDO pins and allow data to be scanned into and out of the SRAM test circuitry. Only one register can be selected at a time through the instruction registers. Data is serially loaded into the TDI pin on the rising edge of TCK. Data is output on the TDO pin on the falling edge of TCK. Instructions are loaded into the TAP controller during the Shift-IR state when the instruction register is placed between TDI and TDO. During this state, instructions are shifted through the instruction register through the TDI and TDO pins. To execute the instruction once it is shifted in, the TAP controller needs to be moved into the Update-IR state. Document Number: 001-05384 Rev. *E Page 12 of 28 CY7C1561V18 CY7C1576V18 CY7C1563V18 CY7C1565V18 IDCODE The IDCODE instruction causes a vendor-specific, 32-bit code to be loaded into the instruction register. It also places the instruction register between the TDI and TDO pins and allows the IDCODE to be shifted out of the device when the TAP controller enters the Shift-DR state. The IDCODE instruction is loaded into the instruction register upon power up or whenever the TAP controller is given a test logic reset state. SAMPLE Z The SAMPLE Z instruction causes the boundary scan register to be connected between the TDI and TDO pins when the TAP controller is in a Shift-DR state. The SAMPLE Z command puts the output bus into a High-Z state until the next command is given during the “Update IR” state. SAMPLE/PRELOAD SAMPLE/PRELOAD is a 1149.1 mandatory instruction. When the SAMPLE/PRELOAD instructions are loaded into the instruction register and the TAP controller is in the Capture-DR state, a snapshot of data on the inputs and output pins is captured in the boundary scan register. The user must be aware that the TAP controller clock can only operate at a frequency up to 20 MHz, while the SRAM clock operates more than an order of magnitude faster. Because there is a large difference in the clock frequencies, it is possible that during the Capture-DR state, an input or output undergoes a transition. The TAP may then try to capture a signal while in transition (metastable state). This does not harm the device, but there is no guarantee what value is captured. Repeatable results may not be possible. PRELOAD allows an initial data pattern to be placed at the latched parallel outputs of the boundary scan register cells prior to the selection of another boundary scan test operation. The shifting of data for the SAMPLE and PRELOAD phases can occur concurrently when required—that is, while data captured is shifted out, the preloaded data can be shifted in. BYPASS When the BYPASS instruction is loaded in the instruction register and the TAP is placed in a Shift-DR state, the bypass register is placed between the TDI and TDO pins. The advantage of the BYPASS instruction is that it shortens the boundary scan path when multiple devices are connected together on a board. EXTEST The EXTEST instruction enables the preloaded data to be driven out through the system output pins. This instruction also selects the boundary scan register to be connected for serial access between the TDI and TDO in the shift-DR controller state. EXTEST OUTPUT BUS TRI-STATE IEEE Standard 1149.1 mandates that the TAP controller be able to put the output bus into a tri-state mode. The boundary scan register has a special bit located at bit #108. When this scan cell, called the “extest output bus tri-state”, is latched into the preload register during the “Update-DR” state in the TAP controller, it directly controls the state of the output (Q-bus) pins, when the EXTEST is entered as the current instruction. When HIGH, it enables the output buffers to drive the output bus. When LOW, this bit places the output bus into a High-Z condition. To guarantee that the boundary scan register captures the correct value of a signal, the SRAM signal must be stabilized long enough to meet the TAP controller's capture setup plus hold times (tCS and tCH). The SRAM clock input might not be captured correctly if there is no way in a design to stop (or slow) the clock during a SAMPLE/PRELOAD instruction. If this is an issue, it is still possible to capture all other signals and simply ignore the value of the CK and CK# captured in the boundary scan register. This bit can be set by entering the SAMPLE/PRELOAD or EXTEST command, and then shifting the desired bit into that cell, during the “Shift-DR” state. During “Update-DR”, the value loaded into that shift-register cell latches into the preload register. When the EXTEST instruction is entered, this bit directly controls the output Q-bus pins. Note that this bit is pre-set HIGH to enable the output when the device is powered-up, and also when the TAP controller is in the “Test-Logic-Reset” state. Once the data is captured, it is possible to shift out the data by putting the TAP into the Shift-DR state. This places the boundary scan register between the TDI and TDO pins. Reserved Document Number: 001-05384 Rev. *E These instructions are not implemented but are reserved for future use. Do not use these instructions. Page 13 of 28 CY7C1561V18 CY7C1576V18 CY7C1563V18 CY7C1565V18 TAP Controller State Diagram The state diagram for the TAP controller follows.[12] 1 TEST-LOGIC RESET 0 0 TEST-LOGIC/ IDLE 1 1 SELECT DR-SCAN SELECT IR-SCAN 0 0 1 1 CAPTURE-DR CAPTURE-IR 0 0 0 SHIFT-DR 1 1 EXIT1-DR 1 EXIT1-IR 0 0 PAUSE-DR 0 0 PAUSE-IR 1 1 0 EXIT2-DR EXIT2-IR 1 1 UPDATE-DR 1 0 SHIFT-IR 1 0 1 0 UPDATE-IR 1 0 Note 12. The 0/1 next to each state represents the value at TMS at the rising edge of TCK. Document Number: 001-05384 Rev. *E Page 14 of 28 CY7C1561V18 CY7C1576V18 CY7C1563V18 CY7C1565V18 TAP Controller Block Diagram 0 Bypass Register Selection Circuitry TDI 2 1 0 1 0 Instruction Register 31 30 29 . . 2 Selection Circuitry TDO Identification Register 108 . . . . 2 1 0 Boundary Scan Register TCK TMS TAP Controller TAP Electrical Characteristics Over the Operating Range[13, 14, 15] Parameter Description Test Conditions Min Max Unit VOH1 Output HIGH Voltage IOH = −2.0 mA 1.4 V VOH2 Output HIGH Voltage IOH = −100 µA 1.6 V VOL1 Output LOW Voltage IOL = 2.0 mA 0.4 V VOL2 Output LOW Voltage IOL = 100 µA 0.2 V VIH Input HIGH Voltage VIL Input LOW Voltage IX Input and Output Load Current 0.65VDD VDD + 0.3 GND ≤ VI ≤ VDD V –0.3 0.35VDD V –5 5 µA Notes 13. These characteristics pertain to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in the Electrical Characteristics Table. 14. Overshoot: VIH(AC) < VDDQ + 0.35V (Pulse width less than tCYC/2), Undershoot: VIL(AC) > −0.3V (Pulse width less than tCYC/2). 15. All Voltage referenced to Ground. Document Number: 001-05384 Rev. *E Page 15 of 28 CY7C1561V18 CY7C1576V18 CY7C1563V18 CY7C1565V18 TAP AC Switching Characteristics Over the Operating Range [16, 17] Parameter Description Min Max Unit 20 MHz tTCYC TCK Clock Cycle Time tTF TCK Clock Frequency tTH TCK Clock HIGH 20 ns tTL TCK Clock LOW 20 ns tTMSS TMS Setup to TCK Clock Rise 5 ns tTDIS TDI Setup to TCK Clock Rise 5 ns tCS Capture Setup to TCK Rise 5 ns tTMSH TMS Hold after TCK Clock Rise 5 ns tTDIH TDI Hold after Clock Rise 5 ns tCH Capture Hold after Clock Rise 5 ns 50 ns Setup Times Hold Times Output Times tTDOV TCK Clock LOW to TDO Valid tTDOX TCK Clock LOW to TDO Invalid 10 0 ns ns TAP Timing and Test Conditions Figure 2 shows the TAP timing and test conditions.[17] Figure 2. TAP Timing and Test Conditions 0.9V ALL INPUT PULSES 1.8V 50Ω 0.9V TDO 0V Z0 = 50Ω (a) CL = 20 pF tTH GND tTL Test Clock TCK tTCYC tTMSH tTMSS Test Mode Select TMS tTDIS tTDIH Test Data In TDI Test Data Out TDO tTDOV tTDOX Notes 16. tCS and tCH refer to the setup and hold time requirements of latching data from the boundary scan register. 17. Test conditions are specified using the load in TAP AC Test Conditions. tR/tF = 1 ns. Document Number: 001-05384 Rev. *E Page 16 of 28 CY7C1561V18 CY7C1576V18 CY7C1563V18 CY7C1565V18 Identification Register Definitions Instruction Field Value CY7C1561V18 CY7C1576V18 CY7C1563V18 CY7C1565V18 000 000 000 000 Revision Number (31:29) Description Version number. Cypress Device ID 11010010001000100 11010010001001100 11010010001010100 11010010001100100 Defines the type of (28:12) SRAM. Cypress JEDEC ID (11:1) 00000110100 00000110100 00000110100 00000110100 1 1 1 1 ID Register Presence (0) Allows unique identification of SRAM vendor. Indicates the presence of an ID register. Scan Register Sizes Register Name Bit Size Instruction 3 Bypass 1 ID 32 Boundary Scan 109 Instruction Codes Instruction Code Description EXTEST 000 Captures the Input/Output ring contents. IDCODE 001 Loads the ID register with the vendor ID code and places the register between TDI and TDO. This operation does not affect SRAM operation. SAMPLE Z 010 Captures the Input/Output contents. Places the boundary scan register between TDI and TDO. Forces all SRAM output drivers to a High-Z state. RESERVED 011 Do Not Use: This instruction is reserved for future use. SAMPLE/PRELOAD 100 Captures the Input/Output ring contents. Places the boundary scan register between TDI and TDO. Does not affect the SRAM operation. RESERVED 101 Do Not Use: This instruction is reserved for future use. RESERVED 110 Do Not Use: This instruction is reserved for future use. BYPASS 111 Places the bypass register between TDI and TDO. This operation does not affect SRAM operation. Document Number: 001-05384 Rev. *E Page 17 of 28 CY7C1561V18 CY7C1576V18 CY7C1563V18 CY7C1565V18 Boundary Scan Order Bit # Bump ID Bit # Bump ID Bit # Bump ID Bit # Bump ID 0 6R 28 10G 56 6A 84 1J 1 6P 29 9G 57 5B 85 2J 2 6N 30 11F 58 5A 86 3K 3 7P 31 11G 59 4A 87 3J 4 7N 32 9F 60 5C 88 2K 5 7R 33 10F 61 4B 89 1K 6 8R 34 11E 62 3A 90 2L 7 8P 35 10E 63 2A 91 3L 8 9R 36 10D 64 1A 92 1M 9 11P 37 9E 65 2B 93 1L 10 10P 38 10C 66 3B 94 3N 3M 11 10N 39 11D 67 1C 95 12 9P 40 9C 68 1B 96 1N 13 10M 41 9D 69 3D 97 2M 14 11N 42 11B 70 3C 98 3P 15 9M 43 11C 71 1D 99 2N 16 9N 44 9B 72 2C 100 2P 17 11L 45 10B 73 3E 101 1P 18 11M 46 11A 74 2D 102 3R 19 9L 47 10A 75 2E 103 4R 20 10L 48 9A 76 1E 104 4P 21 11K 49 8B 77 2F 105 5P 22 10K 50 7C 78 3F 106 5N 23 9J 51 6C 79 1G 107 5R 24 9K 52 8A 80 1F 108 Internal 25 10J 53 7A 81 3G 26 11J 54 7B 82 2G 27 11H 55 6B 83 1H Document Number: 001-05384 Rev. *E Page 18 of 28 CY7C1561V18 CY7C1576V18 CY7C1563V18 CY7C1565V18 Power Up Sequence in QDR-II+ SRAM QDR-II+ SRAMs must be powered up and initialized in a predefined manner to prevent undefined operations. During Power Up, when the DOFF is tied HIGH, the DLL gets locked after 2048 cycles of stable clock. Power Up Sequence ■ Apply power with DOFF tied HIGH (All other inputs can be HIGH or LOW) ❐ Apply VDD before VDDQ ❐ Apply VDDQ before VREF or at the same time as VREF ■ Provide stable power and clock (K, K) for 2048 cycles to lock the DLL. DLL Constraints ■ DLL uses K clock as its synchronizing input. The input must have low phase jitter, which is specified as tKC Var. ■ The DLL functions at frequencies down to 120 MHz. ■ If the input clock is unstable and the DLL is enabled, then the DLL may lock onto an incorrect frequency, causing unstable SRAM behavior. To avoid this, provide 2048 cycles stable clock to relock to the desired clock frequency. ~ ~ Power Up Waveforms K ~ ~ K Unstable Clock > 2048 Stable Clock Start Normal Operation Clock Start (Clock Starts after VDD/VDDQ is Stable) VDD/VDDQ DOFF Document Number: 001-05384 Rev. *E VDD/VDDQ Stable (< + 0.1V DC per 50 ns) Fix HIGH (tie to VDDQ) Page 19 of 28 CY7C1561V18 CY7C1576V18 CY7C1563V18 CY7C1565V18 Maximum Ratings Current into Outputs (LOW) ........................................ 20 mA Exceeding maximum ratings may impair the useful life of the device. These user guidelines are not tested. Storage Temperature ................................. –65°C to +150°C Static Discharge Voltage (MIL-STD-883, M. 3015)... >2001V Latch-up Current .................................................... >200 mA Operating Range Ambient Temperature with Power Applied.. –55°C to +125°C Range Supply Voltage on VDD Relative to GND ........–0.5V to +2.9V Supply Voltage on VDDQ Relative to GND.......–0.5V to +VDD Commercial DC Applied to Outputs in High-Z ........ –0.5V to VDDQ + 0.3V Industrial [14] DC Input Voltage Ambient Temperature (TA) VDD[18] VDDQ[18] 0°C to +70°C 1.8 ± 0.1V 1.4V to VDD –40°C to +85°C ............................... –0.5V to VDD + 0.3V Electrical Characteristics DC Electrical Characteristics Over the Operating Range[15] Parameter Description Test Conditions Min Typ Max Unit VDD Power Supply Voltage 1.7 1.8 1.9 V VDDQ IO Supply Voltage 1.4 1.5 VDD V VOH Output HIGH Voltage Note 19 VDDQ/2 – 0.12 VDDQ/2 + 0.12 V VOL Output LOW Voltage Note 20 VDDQ/2 – 0.12 VDDQ/2 + 0.12 V VOH(LOW) Output HIGH Voltage IOH = −0.1 mA, Nominal Impedance VDDQ – 0.2 VDDQ V VOL(LOW) Output LOW Voltage IOL = 0.1mA, Nominal Impedance VSS 0.2 V VREF + 0.1 VDDQ + 0.15 V –0.15 VREF – 0.1 V Voltage[14] VIH Input HIGH VIL Input LOW Voltage[14] IX Input Leakage Current GND ≤ VI ≤ VDDQ −2 2 µA IOZ Output Leakage Current GND ≤ VI ≤ VDDQ, Output Disabled −2 2 µA Voltage[21] VREF Input Reference IDD (x8) VDD Operating Supply IDD (x9) IDD (x18) IDD (x36) VDD Operating Supply VDD Operating Supply VDD Operating Supply Typical Value = 0.75V VDD = Max, IOUT = 0 mA, f = fMAX = 1/tCYC VDD = Max, IOUT = 0 mA, f = fMAX = 1/tCYC VDD = Max, IOUT = 0 mA, f = fMAX = 1/tCYC VDD = Max, IOUT = 0 mA, f = fMAX = 1/tCYC 0.95 V 300 MHz 0.68 0.75 1100 mA 333 MHz 1200 375 MHz 1300 400 MHz 1400 300 MHz 1100 333 MHz 1200 375 MHz 1300 400 MHz 1400 300 MHz 1100 333 MHz 1200 375 MHz 1300 400 MHz 1400 300 MHz 1100 333 MHz 1200 375 MHz 1300 400 MHz 1400 mA mA mA Notes 18. Power up: Assumes a linear ramp from 0V to VDD(min) within 200 ms. During this time VIH < VDD and VDDQ < VDD. 19. Output are impedance controlled. IOH = −(VDDQ/2)/(RQ/5) for values of 175 ohms <= RQ <= 350 ohms. 20. Output are impedance controlled. IOL = (VDDQ/2)/(RQ/5) for values of 175 ohms <= RQ <= 350 ohms. 21. VREF (min) = 0.68V or 0.46VDDQ, whichever is larger, VREF (max) = 0.95V or 0.54VDDQ, whichever is smaller. Document Number: 001-05384 Rev. *E Page 20 of 28 CY7C1561V18 CY7C1576V18 CY7C1563V18 CY7C1565V18 Electrical Characteristics (continued) DC Electrical Characteristics Over the Operating Range[15] Parameter ISB1 Description Test Conditions Automatic Power down Current Max VDD, Both Ports Deselected, VIN ≥ VIH or VIN ≤ VIL f = fMAX = 1/tCYC, Inputs Static Min Typ Max Unit 300 MHz 450 mA 333 MHz 500 375 MHz 525 400 MHz 550 AC Electrical Characteristics Over the Operating Range[14] Parameter Description Test Conditions Min Typ Max Unit VIH Input HIGH Voltage VREF + 0.2 – VDDQ + 0.24 V VIL Input LOW Voltage –0.24 – VREF – 0.2 V Capacitance Tested initially and after any design or process change that may affect these parameters. Parameter Description Max Test Conditions Unit CIN Input Capacitance 5 pF CCLK Clock Input Capacitance 6 pF CO Output Capacitance 7 pF Test Conditions 165 FBGA Package Unit Test conditions follow standard test methods and procedures for measuring thermal impedance, per EIA/JESD51. 11.82 °C/W 2.33 °C/W TA = 25°C, f = 1 MHz, VDD = 1.8V, VDDQ = 1.5V Thermal Resistance Tested initially and after any design or process change that may affect these parameters. Parameter Description ΘJA Thermal Resistance (Junction to Ambient) ΘJC Thermal Resistance (Junction to Case) AC Test Loads and Waveforms VREF = 0.75V VREF 0.75V VREF OUTPUT Z0 = 50Ω Device Under Test ZQ RL = 50Ω VREF = 0.75V R = 50Ω ALL INPUT PULSES 1.25V 0.75V OUTPUT Device Under Test ZQ RQ = 250Ω (a) 0.75V INCLUDING JIG AND SCOPE 5 pF [22] 0.25V Slew Rate = 2 V/ns RQ = 250Ω (b) Notes 22. Unless otherwise noted, test conditions assume signal transition time of 2V/ns, timing reference levels of 0.75V, Vref = 0.75V, RQ = 250Ω, VDDQ = 1.5V, input pulse levels of 0.25V to 1.25V, and output loading of the specified IOL/IOH and load capacitance shown in (a) of “AC Test Loads and Waveforms” . Document Number: 001-05384 Rev. *E Page 21 of 28 CY7C1561V18 CY7C1576V18 CY7C1563V18 CY7C1565V18 Switching Characteristics Over the Operating Range[22, 23] CY Consortium Parameter Parameter Description VDD(Typical) to the First Access[24] tPOWER tCYC tKHKH K Clock Cycle Time 400 MHz 375 MHz 333 MHz 300 MHz Min Max Min Max Min Max Min Max 1 1 1 2.50 8.40 2.66 8.40 3.0 1 8.40 Unit ms 3.3 8.40 ns tKH tKHKL Input Clock (K/K) HIGH 0.4 – 0.4 – 0.4 0.4 – tCYC tKL tKLKH Input Clock (K/K) LOW 0.4 – 0.4 – 0.4 0.4 – tCYC tKHKH tKHKH K Clock Rise to K Clock Rise (rising edge to rising edge) 1.06 – 1.13 – 1.28 – 1.40 – ns – 0.4 – 0.4 – 0.4 – ns Setup Times tSA tAVKH Address Setup to K Clock Rise 0.4 tSC tIVKH Control Setup to K Clock Rise (RPS, WPS) 0.4 – 0.4 – 0.4 – 0.4 – ns tSCDDR tIVKH Double Data Rate Control Setup to Clock (K, K) 0.28 Rise (BWS0, BWS1, BWS2, BWS3) – 0.28 – 0.28 – 0.28 – ns tSD tDVKH D[X:0] Setup to Clock (K/K) Rise 0.28 – 0.28 – 0.28 – 0.28 – ns Hold Times tHA tKHAX Address Hold after K Clock Rise 0.4 – 0.4 – 0.4 – 0.4 – ns tHC tKHIX Control Hold after K Clock Rise (RPS, WPS) 0.4 – 0.4 – 0.4 – 0.4 – ns tHCDDR tKHIX Double Data Rate Control Hold after Clock (K/K) 0.28 Rise (BWS0, BWS1, BWS2, BWS3) – 0.28 – 0.28 – 0.28 – ns tHD tKHDX D[X:0] Hold after Clock (K/K) Rise – 0.28 – 0.28 – 0.28 – ns 0.45 – 0.45 – 0.45 – 0.45 ns – –0.45 – –0.45 – –0.45 – ns 0.45 – 0.45 – 0.45 – 0.45 ns – –0.45 – –0.45 – –0.45 – ns 0.2 ns –0.2 – ns 1.15 – ns 0.28 Output Times tCO tCHQV K/K Clock Rise to Data Valid tDOH tCHQX Data Output Hold after Output K/K Clock Rise (Active to Active) tCCQO tCHCQV K/K Clock Rise to Echo Clock Valid tCQOH tCHCQX Echo Clock Hold after K/K Clock Rise tCQD tCQHQV Echo Clock High to Data Valid tCQDOH tCQHQX Echo Clock High to Data Invalid –0.2 – –0.2 – –0.2 tCQH tCQHCQL Output Clock (CQ/CQ) HIGH[27] 0.81 – 0.88 – 1.03 0.81 – 0.88 – 1.03 – 1.15 – ns 0.45 – 0.45 – 0.45 – 0.45 ns – –0.45 – –0.45 – –0.45 – ns Rise[27] –0.45 –0.45 0.2 0.2 0.2 – tCQHCQH tCQHCQH CQ Clock Rise to CQ Clock (rising edge to rising edge) tCHZ tCHQZ Clock (K/K) Rise to High-Z (Active to High-Z)[24,25] tCLZ tCHQX1 Clock (K/K) Rise to Low-Z[24, 25] –0.45 tQVLD[28] tCQHQVLD Echo Clock High to QVLD Valid –0.20 0.20 –0.20 0.20 –0.20 0.20 –0.20 0.20 ns Notes 23. When a part with a maximum frequency above 300 MHz is operating at a lower clock frequency, it requires the input timings of the frequency range in which it is being operated and outputs data with the output timings of that frequency range. 24. This part has a voltage regulator internally; tPOWER is the time that the power needs to be supplied above VDD minimum initially before a read or write operation can be initiated. 25. tCHZ, tCLZ, are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured ± 100 mV from steady-state voltage. 26. At any given voltage and temperature tCHZ is less than tCLZ and tCHZ less than tCO. 27. These parameters are extrapolated from the input timing parameters (tKHKH - 250ps, where 250ps is the internal jitter. An input jitter of 200ps(tKCVAR) is already included in the tKHKH). These parameters are only guaranteed by design and are not tested in production. 28. tQVLD spec is applicable for both rising and falling edges of QVLD signal. Document Number: 001-05384 Rev. *E Page 22 of 28 CY7C1561V18 CY7C1576V18 CY7C1563V18 CY7C1565V18 Switching Characteristics Over the Operating Range[22, 23] (continued) CY Consortium Parameter Parameter Description 400 MHz 375 MHz 333 MHz 300 MHz Min Max Min Max Min Max Min Max Unit DLL Timing tKC Var tKC Var Clock Phase Jitter – 0.20 – tKC lock tKC lock DLL Lock Time (K) tKC Reset tKC Reset K Static to DLL Reset[28] 0.20 – 2048 – 30 – 0.20 – 2048 – 30 – 0.20 ns 2048 – 30 – 2048 – cycles 30 – ns Note 29. Hold to >VIH or <VIL. Document Number: 001-05384 Rev. *E Page 23 of 28 CY7C1561V18 CY7C1576V18 CY7C1563V18 CY7C1565V18 Switching Waveforms Read/Write/Deselect Sequence[30, 31, 32] Figure 3. Waveform for 2.5 Cycle Read Latency NOP 1 WRITE 3 READ 2 READ 4 NOP 6 WRITE 5 7 8 K t KH t KL t CYC t KHKH K RPS t SC tHC t SC t HC WPS A A0 t SA A1 A3 A2 t HD t HA t SD D t HD t SD D11 D10 D12 D30 D13 D31 D32 tQVLD t QVLD QVLD D33 t tDOH t CLZ CO Q Q00 tCQDOH tCQD Q01 (Read Latency = 2.5 Cycles) Q02 Q03 Q20 Q21 tCHZ Q22 Q23 tCCQO tCQOH CQ t CQH t CQHCQH tCQOH t CCQO CQ DON’T CARE UNDEFINED Notes 30. Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, i.e., A0+1. 31. Outputs are disabled (High-Z) one clock cycle after a NOP. 32. In this example, if address A2 = A1, then data Q20 = D10 and Q21 = D11. Write data is forwarded immediately as read results. This note applies to the whole diagram. Document Number: 001-05384 Rev. *E Page 24 of 28 CY7C1561V18 CY7C1576V18 CY7C1563V18 CY7C1565V18 Ordering Information Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or visit www.cypress.com for actual products offered. Speed (MHz) 400 Ordering Code CY7C1561V18-400BZC Package Diagram Package Type 51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Operating Range Commercial CY7C1576V18-400BZC CY7C1563V18-400BZC CY7C1565V18-400BZC CY7C1561V18-400BZXC 51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free CY7C1576V18-400BZXC CY7C1563V18-400BZXC CY7C1565V18-400BZXC CY7C1561V18-400BZI 51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Industrial CY7C1576V18-400BZI CY7C1563V18-400BZI CY7C1565V18-400BZI CY7C1561V18-400BZXI 51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free CY7C1576V18-400BZXI CY7C1563V18-400BZXI CY7C1565V18-400BZXI 375 CY7C1561V18-375BZC 51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Commercial CY7C1576V18-375BZC CY7C1563V18-375BZC CY7C1565V18-375BZC CY7C1561V18-375BZXC 51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free CY7C1576V18-375BZXC CY7C1563V18-375BZXC CY7C1565V18-375BZXC CY7C1561V18-375BZI 51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Industrial CY7C1576V18-375BZI CY7C1563V18-375BZI CY7C1565V18-375BZI CY7C1561V18-375BZXI 51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free CY7C1576V18-375BZXI CY7C1563V18-375BZXI CY7C1565V18-375BZXI Document Number: 001-05384 Rev. *E Page 25 of 28 CY7C1561V18 CY7C1576V18 CY7C1563V18 CY7C1565V18 Ordering Information (continued) Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or visit www.cypress.com for actual products offered. Speed (MHz) 333 Ordering Code CY7C1561V18-333BZC Package Diagram Package Type 51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Operating Range Commercial CY7C1576V18-333BZC CY7C1563V18-333BZC CY7C1565V18-333BZC CY7C1561V18-333BZXC 51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free CY7C1576V18-333BZXC CY7C1563V18-333BZXC CY7C1565V18-333BZXC CY7C1561V18-333BZI 51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Industrial CY7C1576V18-333BZI CY7C1563V18-333BZI CY7C1565V18-333BZI CY7C1561V18-333BZXI 51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free CY7C1576V18-333BZXI CY7C1563V18-333BZXI CY7C1565V18-333BZXI 300 CY7C1561V18-300BZC 51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Commercial CY7C1576V18-300BZC CY7C1563V18-300BZC CY7C1565V18-300BZC CY7C1561V18-300BZXC 51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free CY7C1576V18-300BZXC CY7C1563V18-300BZXC CY7C1565V18-300BZXC CY7C1561V18-300BZI 51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Industrial CY7C1576V18-300BZI CY7C1563V18-300BZI CY7C1565V18-300BZI CY7C1561V18-300BZXI 51-85195 165-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free CY7C1576V18-300BZXI CY7C1563V18-300BZXI CY7C1565V18-300BZXI Document Number: 001-05384 Rev. *E Page 26 of 28 CY7C1561V18 CY7C1576V18 CY7C1563V18 CY7C1565V18 Package Diagram Figure 4. 165-ball FBGA (15 x 17 x 1.40 mm), 51-85195 "/44/- 6)%7 4/0 6)%7 - # ! " 0). #/2.%2 - # 0). #/2.%2 8 ! " " # # ! $ $ & & ' ' ( * % ¼ % ( * + , , + - - . . 0 0 2 2 ! " ¼ # ¼ ¼ # 8 ./4%3 3/,$%2 0!$ 490% ./. 3/,$%2 -!3+ $%&).%$ .3-$ 0!#+!'% 7%)'(4 G *%$%# 2%&%2%.#% -/ $%3)'. # 0!#+!'% #/$% ""!$ -!8 3%!4).' 0,!.% # 51-85195-*A Document Number: 001-05384 Rev. *E Page 27 of 28 CY7C1561V18 CY7C1576V18 CY7C1563V18 CY7C1565V18 Document History Page Document Title: CY7C1561V18/CY7C1576V18/CY7C1563V18/CY7C1565V18, 72-Mbit QDR™-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) Document Number: 001-05384 REV. ECN NO. ISSUE DATE ORIG. OF CHANGE ** 402911 See ECN VEE New Data Sheet *A 425251 See ECN VEE Updated the switching waveform Corrected the typos in DC parameters Updated the DLL section Added additional notes in the AC parameter section Updated the Power up sequence Added additional parameters in the AC timing DESCRIPTION OF CHANGE *B 437000 See ECN IGS ECN for Show on web *C 461934 See ECN NXR Moved the Selection Guide table from page# 3 to page# 1. Modified Application Diagram. Changed tTH and tTL from 40 ns to 20 ns, changed tTMSS, tTDIS, tCS, tTMSH, tTDIH, tCH from 10 ns to 5 ns and changed tTDOV from 20 ns to 10 ns in TAP AC Switching Characteristics table Modified Power Up waveform. Included Maximum ratings for Supply Voltage on VDDQ Relative to GND. Changed the Maximum Ratings for DC Input Voltage from VDDQ to VDD. Changed the Pin Definition of IX from Input Load current to Input Leakage current on page#18. *D 497567 See ECN NXR Changed the VDDQ operating voltage to 1.4V to VDD in the Features section, in Operating Range table and in the DC Electrical Characteristics table Added foot note in page# 1 Changed the Maximum rating of Ambient Temperature with Power Applied from –10°C to +85°C to –55°C to +125°C Changed VREF (Max) spec from 0.85V to 0.95V in the DC Electrical Characteristics table and in the note below the table Updated footnote #21 to specify Overshoot and Undershoot Spec Updated IDD and ISB values Updated ΘJA and ΘJC values Removed x9 part and its related information Updated footnote #25 *E 1351243 See ECN VKN/FSU Converted from preliminary to final Added x8 and x9 parts Changed tCYC max spec to 8.4 ns for all speed bins Updated footnote# 23 Updated Ordering Information table © Cypress Semiconductor Corporation, 2005-2007. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. 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Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Use may be limited by and subject to the applicable Cypress software license agreement. Document Number: 001-05384 Rev. *E Revised July 24, 2007 Page 28 of 28 QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress, IDT, NEC, Renesas, and Samsung. All product and company names mentioned in this document are the trademarks of their respective holders.