ATMEL ATA6831-PIQW Triple half-bridge driver with sp and pwm Datasheet

Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Supply Voltage up to 40V
RDSon Typically 0.8Ω at 25°C, Maximum 1.5Ω at 150°C
Up to 1.0A Output Current
Three Half-bridge Outputs Formed by Three High-side and Three Low-side Drivers
Capable of Switching Loads such as DC Motors, Bulbs, Resistors, Capacitors, and
Inductors
PWM Capability up to 25 kHz for Each High-side Output Controlled by External PWM
Signal
No Shoot-through Current
Very Low Quiescent Current IS < 5 µA in Standby Mode over Total Temperature Range
Outputs Short-circuit Protected
Selective Overtemperature Protection for Each Switch and Overtemperature
Prewarning
Undervoltage Protection
Various Diagnostic Functions such as Shorted Output, Open Load, Overtemperature
and Power-supply Fail Detection
Serial Data Interface, Daisy Chain Capable, up to 2 MHz Clock Frequency
QFN18 Package
Triple
Half-bridge
Driver with SPI
and PWM
ATA6831
1. Description
The ATA6831 provides fully protected driver interfaces designed in SOI technology.
They are used to allow a microcontroller to control up to 3 different loads in automotive and industrial applications.
Each of the 3 high-side and 3 low-side drivers is capable of driving currents up to
1.0A. Due to the enhanced PWM signal (up to 25 kHz) it is possible to generate a
smooth control of, for example, a DC motor without any noise. The drivers are internally connected to form 3 half-bridges and can be controlled separately from a
standard serial data interface, enabling all kinds of loads, such as bulbs, resistors,
capacitors and inductors, to be combined. The IC design especially supports the
application of H-bridges to drive DC motors.
Protection is guaranteed with respect to short-circuit conditions, overtemperature and
undervoltage. Various diagnostic functions and a very low quiescent current in
standby mode enable a wide range of applications. Automotive qualification (protection against conducted interferences, EMC protection and 2-kV ESD protection) gives
added value and enhanced quality for exacting requirements of automotive
applications.
4908D–AUTO–09/06
Figure 1-1.
Block Diagram
S
I
O
S
C
O
L
D
P
H
3
P
L
3
P
H
2
P
L
2
P
H
1
P
L
1
H
S
3
L
S
3
H
S
2
L
S
2
H
S
1
L
S
1
S
R
R
10
VS1
11
Input register
Ouput register
DI
4
P
S
F
I
N
H
O
V
L
n.
u.
Serial interface
n.
u.
n.
u.
n.
u.
n.
u.
n. H
u. S
3
L
S
3
H
S
2
L
S
2
H
S
1
Charge
pump
L
S
1
VS2
T
P
CLK
5
CS
3
Fault
detector
DO
Fault
detector
UV
protection
Fault
detector
9
7
Control
logic
PWM
6
VCC
Power on
reset
8
GND
14
Fault
detector
Fault
detector
Fault
detector
GND
Thermal
protection
17
GND
18
1/2
12/13
OUT3
2
GND
15/16
OUT2
OUT1
ATA6831
4908D–AUTO–09/06
ATA6831
2. Pin Configuration
Pinning QFN18
PGND3
PGND1
OUT1S
OUT1F
PGND2
OUT2S
Figure 2-1.
OUT3S
OUT3F
CS
DI
CLK
PWM
Table 2-1.
1
2
3
4
5
6
18 17 16 15 14 13
12
11
10
9
8
7
OUT2F
VS2
VS1
VCC
GND
DO
Pin Description
Pin
Symbol
Function
1
OUT3S
Sense pin, used only for final testing
2
OUT3F
Half-bridge output 3; formed by internally connecting power MOS high-side switch 3 and low-side switch 3
with internal reverse diodes; short circuit protection; overtemperature protection; diagnosis for short and
open load
3
CS
Chip select input; 5V CMOS logic level input with internal pull-up;
low = serial communication is enabled, high = disabled
4
DI
Serial data input; 5V CMOS logic level input with internal pull-down; receives serial data from the control
device; DI expects a 16-bit control word with LSB transferred first
5
CLK
Serial clock input; 5V CMOS logic level input with internal pull-down;
controls serial data input interface and internal shift register (fmax = 2 MHz)
6
PWM
PWM input; 5V CMOS logic level input with internal pull-down
7
DO
8
GND
Ground
9
VCC
Logic supply voltage (5V)
10
VS1
Power supply for output stages OUT1 and OUT2; internal supply
11
VS2
Power supply for output stages OUT2 and OUT3; internal supply
12
OUT2F
Half-bridge output 2; formed by internally connected power MOS high-side switch 2 and low-side switch 2
with internal reverse diodes; short circuit protection; overtemperature protection; diagnosis for short and
open load
13
OUT2S
Sense pin, used only for final testing
14
PGND2
Power ground OUT2
15
OUT1F
Half-bridge output 1; formed by internally connected power MOS high-side switch 1 and low-side switch 1
with internal reverse diodes; short circuit protection; overtemperature protection; diagnosis for short and
open load
16
OUT1S
Sense pin, used only for final testing
17
PGND1
Power ground OUT1
18
PGND3
Power ground OUT3
Serial data output; 5V CMOS logic-level tri-state output for output (status) register data; sends 16-bit status
information to the microcontroller (LSB transferred first); output will remain tri-stated unless device is
selected by CS = low; this allows several ICs to operate on only one data-output line
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4908D–AUTO–09/06
3. Functional Description
3.1
Serial Interface
Data transfer starts with the falling edge of the CS signal. Data must appear at DI synchronized
to CLK and is accepted on the falling edge of the CLK signal. The LSB (bit 0, SRR) has to be
transferred first. Execution of new input data is enabled on the rising edge of the CS signal.
When CS is high, pin DO is in tri-state condition. This output is enabled on the falling edge of
CS. Output data will change their state with the rising edge of CLK and stay stable until the next
rising edge of CLK appears. LSB (bit 0, TP) is transferred first.
Figure 3-1.
Data Transfer
CS
DI
SRR
0
LS1
1
HS1
LS2
HS2
2
3
4
S1H
S2L
S2H
LS3
HS3
nPL!
5
6
7
8
S3H
n. u.
n. u.
PH1
PL2
9
PH2
10
PL3
11
PH3
12
OCS
OLD
13
14
SI
15
CLK
DO
TP
S1L
Table 3-1.
Bit
4
S3L
n. u.
n. u.
n. u.
n. u.
OVl
INH
PSF
Input Data Protocol
Input Register
Function
0
SRR
Status register reset (high = reset; the bits PSF and OVL in the output
data register are set to low)
1
LS1
Controls output LS1 (high = switch output LS1 on)
2
HS1
Controls output HS1 (high = switch output HS1 on)
3
LS2
See LS1
4
HS2
See HS1
5
LS3
See LS1
6
HS3
See HS1
7
PL1
Output LS1 additionally controlled by PWM Input
8
PH1
Output HS1 additionally controlled by PWM Input
9
PL2
See PL1
10
PH2
See PH1
11
PL3
See PL1
12
PH3
See PH1
13
OLD
Open load detection (low = on)
14
OCS
Overcurrent shutdown (high = overcurrent shutdown is active)
15
SI
Software inhibit; low = standby, high = normal operation
(data transfer is not affected by the standby function because the digital
part is still powered)
ATA6831
4908D–AUTO–09/06
ATA6831
Table 3-2.
Output Data Protocol
Bit
Output (Status)
Register
0
TP
Function
Temperature prewarning: high = warning
Status LS1
Normal operation: high = output is on, low = output is off
Open-load detection: high = open load, low = no open load
(correct load condition is detected if the corresponding output is
switched off); not affected by SRR
2
Status HS1
Normal operation: high = output is on, low = output is off
Open-load detection: high = open load, low = no open load
(correct load condition is detected if the corresponding output is
switched off); not affected by SRR
3
Status LS2
Description see LS1
4
Status HS2
Description see HS1
1
5
Status LS3
Description see LS1
6
Status HS3
Description see HS1
7
n. u.
Not used
8
n. u.
Not used
9
n. u.
Not used
10
n. u.
Not used
11
n. u.
Not used
12
n. u.
Not used
13
OVL
Over-load detected: set high, when at least one output is switched off
by a short-circuit condition or an overtemperature event. Bits 1 to 6 can
be used to detect the affected switch
14
INH
Inhibit: this bit is controlled by software (bit SI in input register)
High = standby, low = normal operation
15
PSF
Power-supply fail: undervoltage at pin VS detected
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4908D–AUTO–09/06
After power-on reset, the input register has the following status:
Bit 15
SI
Bit 14
OCS
Bit 13
OLD
Bit 12
PH3
Bit 11
PL3
Bit 10
PH2
Bit 9
PL2
Bit 8
PH1
Bit 7
PL1
Bit 6
HS3
Bit 5
LS3
Bit 4
HS2
Bit 3
LS2
Bit 2
HS1
Bit 1
LS1
Bit 0
SRR
H
H
H
L
L
L
L
L
L
L
L
L
L
L
L
L
The following patterns are used to enable internal test modes of the IC. Do not use these patterns during normal operation.
Bit 15 Bit 14
Bit 13
(OCS)
Bit 12
Bit 11
Bit 10
Bit 9
Bit 8
Bit 7
Bit 6
(HS3)
Bit 5
(LS3)
Bit 4
(HS2)
Bit 3
(LS2)
Bit 2 Bit 1
(HS1) (LS1)
Bit 0
(SRR)
H
H
H
H
H
L
L
L
L
L
L
L
L
L
L
L
H
H
H
L
L
H
H
L
L
L
L
L
L
L
L
L
H
H
H
L
L
L
L
H
H
L
L
L
L
L
L
L
3.2
Power-supply Fail
If undervoltage is detected at pin VS, the power-supply fail bit (PSF) in the output register is set
and all outputs are disabled. To detect an undervoltage, its duration has to last longer than the
undervoltage detection delay time tdUV. The outputs are enabled immediately when the supply
voltage returns to the normal operational value. The PSF bit stays high until it is reset by the
SRR bit in the input register.
3.3
Open-load Detection
If the open-load detection bit (OLD) is set to low, a pull-up current for each high-side switch and
a pull-down current for each low-side switch is turned on (open-load detection current IOUT1-3). If
the current through the external load does not reach the open-load detection current, the corresponding bit of the output in the output register is set to high.
Switching on an output stage with the OLD bit set to low disables the open-load function for this
output.
6
ATA6831
4908D–AUTO–09/06
ATA6831
3.4
Overtemperature Protection
If the junction temperature of one or more output stages exceeds the thermal prewarning threshold, T jPW set , the temperature prewarning bit (TP) in the output register is set. When the
temperature falls below the thermal prewarning threshold, TjPW reset, the bit TP is reset. The TP
bit can be read without transferring a complete 16-bit data word. The status of TP is available at
pin DO with the falling edge of CS. After the microcontroller has read this information, CS is set
high and the data transfer is interrupted without affecting the status of input and output registers.
If the junction temperature of an output stage exceeds the thermal shutdown threshold, Tjswitch off,
the affected output is disabled and the corresponding bit in the output register is set to low. Additionally, the overload detection bit (OVL) in the output register is set. The output can be enabled
again when the temperature falls below the thermal shutdown threshold, Tjswitch on, and the SRR
bit in the input register is set to high. The hysteresis of thermal prewarning and shutdown threshold avoids oscillations.
3.5
Short-circuit Protection
The output currents are limited by a current regulator. Overcurrent detection is activated by writing a high to the overcurrent shutdown bit (OCS) bit in the input register. When the current in an
output stage exceeds the overcurrent limitation and shut-down threshold, it is switched off, following a delay time (tdSd). The over-load detection bit (OVL) is set and the corresponding status
bit in the output register is set to low. For OCS = low, the overcurrent shutdown is inactive and
the OVL bit is not set by an overcurrent. By writing a high to the SRR bit in the input register the
OVL bit is reset and the disabled outputs are enabled.
3.6
Inhibit
The SI bit in the input register has to be set to zero to inhibit the ATA6831.
In this state, all output stages are then turned off but the serial interface remains active. The current consumption is reduced to less than 5 µA at pin VS and less than 100 µA at pin VCC. The
output stages can be reactivated by setting bit SI to “1”.
3.7
PWM Mode
The common input for all six outputs is pin PWM (Figure 3-2). The selection of the outputs,
which are controlled by PWM, is done by input data register PLx or PHx. In addition to the PWM
input register, the corresponding input registers HSx and LSs have to be set.
Switching the high side outputs is possible up to 25 kHz, low side switches up to 8 kHz.
Figure 3-2.
Output Control by PWM
Bit LSx/HSx
Pin OUTx
Bit PLx/PHx
Pin PWM
7
4908D–AUTO–09/06
4. Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Parameters
Pin
Symbol
Value
Unit
Supply voltage
10, 11
VVS
–0.3 to +40
V
Supply voltage
t < 0.5s; IS > –2A
10, 11
VVS
–1
V
9
VVCC
–0.3 to +7
V
3, 4, 5, 6
VCS, VDI, VCLK,
VPWM
–0.3 to VVCC + 0.3
V
7
VDO
–0.3 to VVCC + 0.3
V
3, 4, 5, 6
ICS, IDI, ICLK,
IPWM
–10 to +10
mA
Output current
7
IDO
–10 to +10
mA
Output current
2, 12, 15
IOut1, IOut2, IOut3
Internally limited, see output
specification
Output voltage
2, 12, 15
IOut1, IOut2, IOut3
–0.3 to +40
V
Reverse conducting current
(tpulse = 150 µs)
2, 12, 15
IOut1, IOut2, IOut3
17
A
Junction temperature range
TJ
–40 to +150
°C
Storage temperature range
TSTG
–55 to +150
°C
Logic supply voltage
Logic input voltage
Logic output voltage
Input current
5. Thermal Resistance
Parameters
Test Conditions
Thermal resistance from junction to
case
Thermal resistance from junction to
ambient
Depends on the PC board
Symbol
Value
Unit
RthJC
15
k/W
RthJA
40
K/W
6. Operating Range
Parameters
Symbol
Value
Unit
Supply voltage
VVS
VUV(1) to
40
V
Logic supply voltage
VVCC
4.75 to 5.25
V
VCS, VDI, VCLK, VPWM
–0.3 to VVCC
V
Serial interface clock frequency
fCLK
2
MHz
PWM input frequency
fPWM
max. 25
kHz
Tj
–40 to +150
°C
Logic input voltage
Junction temperature range
Note:
8
1. Threshold for undervoltage description
ATA6831
4908D–AUTO–09/06
ATA6831
7. Noise and Surge Immunity
Parameters
Test Conditions
Value
Conducted interferences
ISO 7637-1
Level 4(1)
Interference suppression
VDE 0879 Part 2
Level 5
ESD (Human Body Model)
ESD S 5.1
2 kV
CDM (Charge Device Model)
ESD STM5.3.1
500V
Note:
1. Test pulse 5: Vsmax = 40V
8. Electrical Characteristics
7.5V < VS < 40V; 4.75V < VCC < 5.25V; INH = High; –40°C < Tj < 150°C; unless otherwise specified, all values refer to GND pins.
No.
1
Parameters
Test Conditions
Pin
Symbol
10, 11
Min.
Typ.
Max.
Unit
Type*
IVS
1
5
µA
A
9
IVCC
60
100
µA
A
10, 11
IVS
4
6
mA
A
350
650
µA
A
Current Consumption
VVS < 20V, SI = low
1.1
Quiescent current VS
1.2
4.75V < VVCC < 5.25V,
Quiescent current VCC
SI = low
1.3
Supply current VS
VVS < 20V normal
operating, all outputs
off, input register bit 13
(OLD) = high
1.4
Supply current VCC
4.75V < VVCC < 5.25V,
normal operating
9
IVCC
1.5
Discharge current VS
VVS = 32.5V, INH = low
10, 11
IVS
0.5
5.5
mA
A
1.6
Discharge current VS
VVS = 40V, INH = low
10, 11
IVS
2.5
10
mA
A
9
VVCC
3.2
3.9
4.4
V
A
tdPor
30
95
190
µs
A
5.6
7.0
V
A
V
A
40
µs
A
2
Undervoltage Detection, Power-on Reset
2.1
Power-on reset
threshold
2.2
Power-on reset delay
time
2.3
Undervoltage-detection
VCC = 5V
threshold
10, 11
VUv
2.4
Undervoltage-detection
VCC = 5V
hysteresis
10, 11
∆VUv
2.5
Undervoltage-detection
delay time
3
After switching on VCC
0.6
tdUV
10
TjPW set
120
145
170
°C
B
105
130
155
°C
B
K
B
Thermal Prewarning and Shutdown
3.1
Thermal prewarning set
3.2
Thermal prewarning
reset
TjPW reset
3.3
Thermal prewarning
hysteresis
∆TjPW
3.4
Thermal shutdown off
Tj switch off
150
175
200
°C
B
3.5
Thermal shutdown on
Tj switch on
135
160
185
°C
B
15
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes:
1. Delay time between rising edge of input signal at pin CS after data transmission and switch on/off output stages to 90% of
final level. Device not in standby for t > 1 ms.
2. Delay time between rising/falling edge of input signal at pin PWM and switch on/off output stages to 90% of final level.
3. Difference between switch-on and switch-off delay time of input signal at pin PWM to output stages in PWM mode.
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4908D–AUTO–09/06
8. Electrical Characteristics (Continued)
7.5V < VS < 40V; 4.75V < VCC < 5.25V; INH = High; –40°C < Tj < 150°C; unless otherwise specified, all values refer to GND pins.
Min.
Typ.
Max.
Unit
Type*
K
B
Parameters
3.6
Thermal shutdown
hysteresis
∆Tj switch off
3.7
Ratio thermal shutdown
off/thermal prewarning
set
Tj switch off/
TjPW set
1.05
1.2
B
3.8
Ratio thermal shutdown
on/thermal prewarning
reset
Tj switch on/
TjPW reset
1.05
1.2
B
4
Test Conditions
Symbol
No.
Pin
15
Output Specification (OUT1 to OUT3)
4.1
IOut 1-3 = –0.9 A
2, 12,
15
RDSon1-3H
1.5
Ω
A
IOut 1-3 = –0.9 A
2, 12,
15
RDSon1-3L
1.5
Ω
A
µA
A
On resistance
4.2
4.3
High-side output
leakage current
VOut 1-3 H = 0V,
output stages off
2, 12,
15
IOut1-3H
4.4
Low-side output
leakage current
VOut 1-3 L = VVS,
output stages off
2, 12,
15
IOut1-3L
300
µA
A
4.5
High-side switch
reverse diode forward
voltage
IOut = 1.5A
2, 12,
15
VOut1-3 – VVS
2
V
A
4.6
Low-side switch reverse
IOut 1-3 L = –1.5A
diode forward voltage
2, 12,
15
VOut1-3L
2
V
A
4.7
High-side overcurrent
limitation and shutdown 7.5V < VVS < 20V
threshold
2, 12,
15
IOut1-3
1.0
1.3
1.7
A
A
4.8
Low-side overcurrent
limitation and shutdown 7.5V < VVS < 20V
threshold
2, 12,
15
IOut1-3
–1.7
–1.3
–1.0
A
A
4.9
High-side overcurrent
limitation and shutdown 20V < VVS < 40V
threshold
2, 12,
15
IOut1-3
1.0
1.3
2.0
A
A
4.10
Low-side overcurrent
limitation and shutdown 20V < VVS < 40V
threshold
2, 12,
15
IOut1-3
–2.0
–1.3
–1.0
A
A
4.11
Overcurrent shutdown
delay time
tdSd
10
40
µs
A
4.12
High-side open load
detection current
Input register bit 13
(OLD) = low, output off
2, 12,
15
IOut1-3H
–2.5
–0.2
mA
A
4.13
Low-side open load
detection current
Input register bit 13
(OLD) = low, output off
2, 12,
15
IOut1-3L
0.2
2.5
mA
A
4.14
Open load detection
current ratio
IOLoutLX /
IOLoutHX
1.2
3
–15
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes:
1. Delay time between rising edge of input signal at pin CS after data transmission and switch on/off output stages to 90% of
final level. Device not in standby for t > 1 ms.
2. Delay time between rising/falling edge of input signal at pin PWM and switch on/off output stages to 90% of final level.
3. Difference between switch-on and switch-off delay time of input signal at pin PWM to output stages in PWM mode.
10
ATA6831
4908D–AUTO–09/06
ATA6831
8. Electrical Characteristics (Continued)
7.5V < VS < 40V; 4.75V < VCC < 5.25V; INH = High; –40°C < Tj < 150°C; unless otherwise specified, all values refer to GND pins.
Max.
Unit
Type*
tdon
20
µs
A
Low-side output switch VVS = 13V
RLoad = 30Ω
on delay(1),(2)
tdon
20
µs
A
4.17
High-side output switch VVS =13V
off delay(1),(2)
RLoad = 30Ω
tdoff
20
µs
A
4.18
Low-side output switch VVS =13V
RLoad = 30Ω
off delay(1),(2)
tdoff
3
µs
A
4.19
Dead time between
corresponding
high-side and low-side
switches
VVS =13V
RLoad = 30Ω
tdon – tdoff
µs
A
4.20
∆tdPWM
low-side switch(3)
VVS = 13V
RLoad = 30Ω
∆tdPWM =
tdon – tdoff
20
µs
A
4.21
∆tdPWM
high-side switch(3)
VVS = 13V
RLoad = 30Ω
∆tdPWM =
tdon – tdoff
3
7
µs
A
0.3 ×
VVCC
V
A
0.7 ×
VVCC
V
A
No.
Parameters
4.15
High-side output switch VVS = 13V
RLoad = 30Ω
on delay(1),(2)
4.16
5
Test Conditions
Pin
Symbol
Min.
Typ.
1
Logic Inputs DI, CLK, CS, PWM
5.1
Input voltage low-level
threshold
3, 4, 5,
6
VIL
5.2
Input voltage high-level
threshold
3, 4, 5,
6
VIH
5.3
Hysteresis of input
voltage
3, 4, 5,
6
∆VI
50
700
mV
A
5.4
Pull-down current
pins DI, CLK, PWM
VDI, VCLK, VPWM = VCC
4, 5, 6
IPD
10
65
µA
A
5.5
Pull-up current
pin CS
VCS = 0V
3
IPU
–65
–10
µA
A
7
VDOL
0.4
V
A
V
A
10
µA
A
100
µs
A
6
Serial Interface – Logic Output DO
6.1
Output-voltage low level IDOL = 2 mA
6.2
Output-voltage high
level
IDOL = –2 mA
7
VDOH
VVCC –
0.7V
6.3
Leakage current
(tri-state)
VCS = VCC
0V < VDO < VVCC
7
IDO
–10
7
7.1
Inhibit Input – Timing
Delay time from
standby to normal
operation
tdINH
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes:
1. Delay time between rising edge of input signal at pin CS after data transmission and switch on/off output stages to 90% of
final level. Device not in standby for t > 1 ms.
2. Delay time between rising/falling edge of input signal at pin PWM and switch on/off output stages to 90% of final level.
3. Difference between switch-on and switch-off delay time of input signal at pin PWM to output stages in PWM mode.
11
4908D–AUTO–09/06
9. Serial Interface Timing
No.
8
Parameters
Test Conditions
Pin
Timing Chart No.(1)
Symbol
Min.
Typ.
Max.
Unit
Type*
Serial Interface Timing
8.1
DO enable after CS
CDO = 100 pF
falling edge
7
1
tENDO
200
ns
D
8.2
DO disable after CS
CDO = 100 pF
rising edge
7
2
tDISDO
200
ns
D
8.3
DO fall time
CDO = 100 pF
7
-
tDOf
100
ns
D
8.4
DO rise time
CDO = 100 pF
7
-
tDOr
100
ns
D
8.5
DO valid time
CDO = 100 pF
7
10
tDOVal
200
ns
D
8.6
CS setup time
3
4
tCSSethl
225
ns
D
8.7
CS setup time
3
8
tCSSetlh
225
ns
D
8.8
CS high time
3
9
tCSh
500
ns
D
8.9
CLK high time
5
5
tCLKh
225
ns
D
8.10
CLK low time
5
6
tCLKl
225
ns
D
8.11
CLK period time
5
-
tCLKp
500
ns
D
8.12
CLK setup time
5
7
tCLKSethl
225
ns
D
8.13
CLK setup time
5
3
tCLKSetlh
225
ns
D
8.14
DI setup time
4
11
tDIset
40
ns
D
8.15
DI hold time
4
12
tDIHold
40
ns
D
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
12
ATA6831
4908D–AUTO–09/06
ATA6831
Figure 9-1.
Serial Interface Timing with Chart Number
1
2
CS
DO
9
CS
4
7
CLK
5
3
6
8
DI
11
CLK
10
12
DO
Inputs DI, CLK, CS: High level = 0.7 × VCC, low level = 0.3 × VCC
Output DO: High level = 0.8 × VCC, low level = 0.2 × VCC
13
4908D–AUTO–09/06
10. Application Circuit
Figure 10-1. Application Circuit
VCC
VS
S
I
Trigger
Reset
U5021M
Watchdog
O
S
C
O
L
D
P
H
3
P
L
3
P
H
2
P
L
2
P
H
1
P
L
1
H
S
3
L
S
3
H
S
2
L
S
2
H
S
1
L
S
1
S
R
R
BYV28
10
VBatt
VS1
11
Input register
Ouput register
P
S
F
DI
4
I
N
H
O
V
L
n.
u.
Serial interface
n.
u.
n.
u.
n.
u.
n.
u.
n. H
u. S
3
L
S
3
H
S
2
L
S
2
H
S
1
Charge
pump
L
S
1
13V
VS2
+
T
P
CLK
5
Microcontroller
CS
3
Fault
detector
Fault
detector
VCC
UV
protection
Fault
detector
VCC
9
DO
Control
logic
7
PWM
6
VCC
Power on
reset
5V
+
8
GND
Fault
detector
Fault
detector
14
Fault
detector
GND
Thermal
protection
VCC
17
GND
18
2
12
OUT3
M
10.1
GND
15
OUT2
OUT1
M
Application Notes
• Connect the blocking capacitors at VCC and VS as close as possible to the power supply and
GND pins.
• Recommended value for capacitors at VS:
– Electrolytic capacitor C > 22 µF in parallel with a ceramic capacitor C = 100 nF. The
value for the electrolytic capacitor depends on external loads, conducted
interferences, and the reverse conducting current IOut1,2,3.
• Recommended value for capacitors at VCC:
– Electrolytic capacitor C > 10 µF in parallel with a ceramic capacitor C = 100 nF.
• To reduce thermal resistance, place cooling areas on the PCB as close as possible to the
GND pins and to the die pad.
14
ATA6831
4908D–AUTO–09/06
ATA6831
11. Ordering Information
Extended Type Number
Package
Remarks
ATA6831-PIQW
QFN18, 4 mm × 4 mm
Taped and reeled, Pb-free
ATA6831-PIPW
QFN18, 4 mm × 4 mm
Taped and reeled, Pb-free
ATA6831-PISW
QFN18, 4 mm × 4 mm
Tubes, Pb-free
12. Package Information
Package: VQFN_4 x 4_18L
Exposed pad 2.5 x 3.125
Dimensions in mm
Bottom
2.5
Not indicated tolerances ±0.05
Z
0.5 nom.
Top
13
18
6
4
0.2
1
2.5
3.125±0.15
Pin 1 identification
1
18
12
7
6
2.6±0.15
0.9±0.1
Drawing-No.: 6.543-5133.01-4
Issue: preliminary copy; 06.10.06
0.23±0.07
0.45±0.1
Z 10:1
technical drawings
according to DIN
specifications
15
4908D–AUTO–09/06
13. Revision History
Please note that the following page numbers referred to in this section refer to the specific revision
mentioned, not to this document.
16
Revision No.
History
4908D-AUTO-09/06
•
•
•
•
•
•
•
•
•
Features on page 1 changed
Figure 1-1 “Block Diagram” on page 2 changed
Section 2 “Pin Configuration” on pages 2 to 3 changed
Section 4 “Absolute Maximum Ratings” on page 8 changed
Section 8 “Electrical Characteristics” on pages 9 to 11 changed
Section 9 “Serial Interface Timing” on page 12 changed
Figure 10-1 “Application Circuit” on page 14 changed
Section 11 “Ordering Information” on page 15 changed
Section 12 “Package Information” on page 15 changed
4908C-AUTO-08/06
•
•
•
•
•
•
•
•
•
•
•
•
•
Title on page 1 changed
Features on page 1 changed
Figure 1-1 “Block Diagram” on page 1 changed
Figure 2-1 “Pinning” on page 3 changed
Table 2-1 “Pin Description” on page 3 changed
Table 3-2 “Output Data Protocol” on page 5 changed
Section 3.7 “PWM Mode” on page 7 added
Section 4 “Absolute Maximum Ratings” on page 8 changed
Section 8 “Electrical Characteristics” on pages 9 to 12 changed
Figure 10-1 “Application Circuit” on page 14 changed
Section 10.1 “Application Notes” on page 14 changed
Section 11 “Ordering Information” on page 15 changed
Section 12 “Package Information” on page 15 changed
ATA6831
4908D–AUTO–09/06
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4908D–AUTO–09/06