DIOTEC ELECTRONICS CORP. Data Sheet No. BRDB-5000P-1B ADBD-5000P-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 50 AMP SILICON BRIDGE RECTIFIERS MECHANICAL SPECIFICATION FEATURES SERIES: DB5000P - DB5010P and ADB5004P - ADB5008P VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM MECHANICAL STRENGTH AND HEAT DISSIPATION (Solder Voids: Typical < 2%, Max. < 10% of Die Area) Heat Sink Heat Sink BH BUILT-IN STRESS RELIEF MECHANISM FOR SUPERIOR RELIABILITY AND PERFORMANCE Molded Body INTEGRALLY MOLDED HEAT SINK PROVIDES VERY LOW THERMAL RESISTANCE FOR MAXIMUM HEAT DISSIPATION LT D1 UL RECOGNIZED - FILE #E124962 HOLE FOR #10 SCREW HOLE FOR #10 SCREW (Nom. Hole Dia.=0.208") (Nom. Hole Dia.=0.208") D1 AC AC D3 BL AC LD AC + _ AC BL D1 _ + RoHS COMPLIANT Molded Body LL AC + BH _ MECHANICAL DATA D2 Case: Case: Molded epoxy with integral heat sink Epoxy carries a U/L Flammability rating of 94V-0 D1 BL BL SYM Terminals: Round silver plated copper pins or fast-on terminals MILLIMETERS 28.4 MAX 28.7 MIN BL Soldering: Per MIL-STD 202 Method 208 guaranteed D2 INCHES MIN SYM MILLIMETERS 28.4 MAX 28.7 MIN 1.12 MAX 1.13 BL INCHES MIN 1.12 MAX 1.13 0.40 BH 9.6 10.2 0.38 0.40 BH 9.6 10.2 0.38 Polarity: Marked on side of case D1 15.7 16.7 0.62 0.66 17.5 18.5 0.69 0.73 Mounting Position: Any. Through hole for #10 screw. Max. mounting torque = 20 in-lb. D2 D3 17.5 13.5 n/a 18.5 14.5 0.69 0.53 n/a 0.73 0.57 0.6 D1 D2 LL 10.9 20.6 11.9 n/a 0.47 n/a LD 1.0 1.1 0.43 0.81 0.039 Weight: Fast-on Terminals - 0.7 Ounces (20.0 Grams) Wire Leads - 0.55 Ounces (16.0 Grams) LT 15.2 Suffix "T" indicates FAST-ON TERMINALS 0.042 Suffix "W" indicates WIRE LEADS MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive loads, derate current by 20%. RATINGS PARAMETER (TEST CONDITIONS) SYMBOL CONTROLLED AVALANCHE ADB Series Number ADB ADB UNITS NON-CONTROLLED AVALANCHE DB DB DB DB DB DB DB 5004P 5006P 5008P 5000P 5001P 5002P 5004P 5006P 5008P 5010P Maximum DC Blocking Voltage VRM Working Peak Reverse Voltage VRWM Maximum Peak Recurrent Reverse Voltage VRRM 400 600 800 50 100 200 400 600 800 1000 280 420 560 35 70 140 280 420 560 RMS Reverse Voltage VR (RMS) Mimimum Avalanche Voltage V(BR) Min See Note 1 V(BR) Max See Note 1 Maximum Avalanche Voltage n/a VFM IFSM 600 Average Forward Rectified Current @ TC = 75 C IO 50 Junction Temperature Range TJ -55 to +150 Storage Temperature Range TSTG -55 to +150 Forward Voltage Drop (Per Diode) at 25 Amps DC Peak Forward Surge Current. Single 60Hz Half-Sine Wave O Superimposed on Rated Load (JEDEC Method). TJ = 125 C o o 700 n/a 1.10 1.02 Max. Typ. VOLTS VOLTS AMPS °C @ TA = 25 C o @TA = 125 C Minimum Insulation Breakdown Voltage (Circuit to Case) IRM 1 50 mA VISO 2500 VOLTS Typical Thermal Resistance, Junction to Case RqJC 1.10 Maximum Reverse Current at Rated VRM o C/W 3.01 50bdp Notes: (1) These Bridges Exhibit The Avalanche Characteristic at Breakdown. If Your Application Requires a Specific Breakdown Voltage Range, Please Contact Us. E51 DIOTEC ELECTRONICS CORP. Data Sheet No. BRDB-5000P-2A ABDB-5000P-2A 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 50 AMP SILICON BRIDGE RECTIFIERS RATING & CHARACTERISTIC CURVES FOR SERIES DB5000P - DB5010P and SERIES ADB5004P - ADB5008P 60 700 600 Peak Forward Surge Current (Amperes) Average Forward Current, Io (Amperes) 60Hz Resistive or Inductive Loads 50 40 30 20 Bridge Mounted on 9" x 4" x 5" Thick (22.9cm x 10.2cm x 12.9cm) Finned Al. Plate 10 0 25 75 400 300 200 100 125 175 150 o TJ = 125 C 500 10 1 100 Number of Cycles at 60 Hz o Case Temperature, C FIGURE 1. FORWARD CURRENT DERATING CURVE FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT 10 1000 O Instantaneous Reverse Current, I (Milcroamperes) Instantaneous Forward Current (Amperes) TJ = 125 C 100 10 o TJ = 25 C Pulse Width = 300 mS 1% Duty Cycle 1.0 0.1 0.6 O TJ = 25 C 0.1 .01 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Instantaneous Forward Voltage (Volts) FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE E52 1.0 0 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage FIGURE 4. TYPICAL REVERSE CHARACTERISTICS 9.98bbrdb50p