Z ibo Seno Electronic Engineering Co., Ltd. D20XB05-D20XB100 20A GLASS PASSIVATED BRIDGE RECTIFIER Features · · · · · · Glass Passivated Die Construction 5S High Case Dielectric Strength of 1500VRMS Dim Min Max Surge Overload Rating to 240A Peak A 29.70 30.30 Ideal for Printed Circuit Board Applications Lead Free Finish/RoHS Complian B 19.70 20.30 L C 17.00 18.00 M D 3.80 4.20 E 7.30 7.70 G 9.80 10.20 H 2.00 2.40 I 0.90 1.10 J 2.30 2.70 Low Reverse Leakage Current A K Mechanical Data · · B S _ Case: GBJ J Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 · · Moisture Sensitivity: Level 1 per J-STD-020C · · · · · · Lead Free Plating (Tin Finish). N D H I P C K R Terminals: Plated Leads, Solderable per MIL-STD-202, Method 208 L 3.0 X 45° 4.40 4.80 M 3.40 3.80 N 3.10 3.40 Polarity: Molded on Body P 2.50 2.90 Mounting: Through Hole for #6 Screw R 0.60 0.80 S 10.80 11.20 G E E Mounting Torque: 5.0 in-lbs Maximum Marking: Type Number All Dimensions in mm Weight: 6.6 grams (approximate) Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified Single phase, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Forward Rectified Output Current @ TC = 110°C D20XB D20XB D20XB D20XB 05 10 20 40 D20XB D20XB D20XB Unit 60 80 100 VRRM VRWM VR 50 100 200 400 600 800 1000 V VR(RMS) 35 70 140 280 420 560 700 V IO 20 A Non-Repetitive Peak Forward Surge Current, 8.3 ms single half-sine-wave superimposed on rated load IFSM 240 A @ IF = 10A VFM 1.05 V IR 10 500 µA I2t Rating for Fusing (t < 8.3 ms) (Note 1) I2 t 240 A2 s Typical Total Capacitance per Element (Note 2) CT 60 pF RqJC 0.8 °C/W Tj, TSTG -55 to +150 °C Forward Voltage per element Peak Reverse Current at Rated DC Blocking Voltage @ TA = 25°C @ TC = 125°C Typical Thermal Resistance Junction to Case (Note 3) Operating and Storage Temperature Range Notes: 1. 2. 3. 4. Non-repetitive, for t > 1ms and < 8.3 ms. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC. Unit mounted on 300 x 300 x 1.6mm Cu plate heat sink. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7. D15XB05-D15XB100 1 of 2 www.senocn.com Alldatasheet Z ibo Seno Electronic Engineering Co., Ltd. D20XB05-D20XB100 IF, INSTANTANEOUS FORWARD CURRENT (A) IO, AVERAGE RECTIFIED CURRENT (A) 25 20 With heatsink 15 10 Without heatsink 5 Resistive or Inductive load 0 25 50 75 100 125 150 100 10 1.0 0.1 Tj = 25°C 0.01 0.4 0 TC, CASE TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve 100 250 1.2 1.6 2.0 Tj = 25°C f = 1MHz Tj = 25°C Single half-sine-wave CT, TOTAL CAPACITANCE (pF) IFSM, PEAK FORWARD SURGE CURRENT (A) 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics (per element) 200 150 100 50 0 1 1 100 10 10 1 NUMBER OF CYCLES AT 60 Hz Fig. 3 Maximum Non-Repetitive Surge Current 1000 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Total Capacitance, Per Element Tj = 125°C 100 Tj = 100°C 10 Tj = 50°C 1.0 Tj = 25°C 0.1 0 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics D20XB05-D20XB100 2 of 2 www.senocn.com Alldatasheet