isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Low Saturation Voltage ·Complement to Type BD646 APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICP Collector Current-Peak 12 A IB Base Current-Continuous 0.3 A B PC TJ Tstg Collector Power Dissipation @ Ta=25℃ 2 Collector Power Dissipation @ TC=25℃ 62.5 Junction Temperature 150 ℃ -65~150 ℃ Storage Temperature Range W THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient isc Website：www.iscsemi.cn MAX UNIT 2 ℃/W 62.5 ℃/W BD645 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BD645 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA 2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 50mA 2.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 50mA 3.0 V VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 3V 2.5 V VCB= 60V; IE= 0 0.2 ICBO CONDITIONS MIN TYP. MAX 60 B B B UNIT V mA Collector Cutoff Current VCB= 40V; IE= 0; TC= 150℃ 2.0 ICEO Collector Cutoff Current VCE= 30V; IB= 0 0.5 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 5 mA hFE DC Current Gain IC= 3A ; VCE= 3V isc Website：www.iscsemi.cn B 2 750