BUZ 30A H SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated . Halogen-free according to IEC61249-2--21 Pin 1 Pin 2 G Pin 3 D Type VDS ID RDS(on) Package Pb-free BUZ 30A H 200 V 21 A 0.13 Ω PG-TO-220-3 Yes S Maximum Ratings Parameter Symbol Continuous drain current ID TC = 26 ˚C Pulsed drain current Values Unit A 21 IDpuls TC = 25 ˚C 84 Avalanche current,limited by Tjmax IAR 21 Avalanche energy,periodic limited by Tjmax EAR 12 Avalanche energy, single pulse EAS mJ ID = 21 A, VDD = 50 V, RGS = 25 Ω L = 1.53 mH, Tj = 25 ˚C 450 Gate source voltage VGS Power dissipation Ptot TC = 25 ˚C ± 20 W 125 Operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ≤1 Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 ˚C K/W E 55 / 150 / 56 IEC climatic category, DIN IEC 68-1 Rev. 2.5 V Page 1 2010-07-02 BUZ 30A H Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C Gate threshold voltage 200 - - VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current V 2.1 3 4 IDSS µA VDS = 200 V, VGS = 0 V, Tj = 25 ˚C - 0.1 1 VDS = 200 V, VGS = 0 V, Tj = 125 ˚C - 10 100 Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 Ω RDS(on) VGS = 10 V, ID = 13.5 A Rev. 2.5 nA - Page 2 0.1 0.13 2010-07-02 BUZ 30A H Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS≥ 2 * ID * RDS(on)max, ID = 13.5 A Input capacitance 6 pF - 1400 1900 - 280 400 - 130 200 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 15 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Rise time - 30 45 - 70 110 - 250 320 - 90 120 tr VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Fall time tf VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Rev. 2.5 Page 3 2010-07-02 BUZ 30A H Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS A TC = 25 ˚C Inverse diode direct current,pulsed - 84 V 1.2 1.6 trr ns - 180 - Qrr µC VR = 100 V, IF=lS, diF/dt = 100 A/µs Rev. 2.5 - - VR = 100 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge 21 VSD VGS = 0 V, IF = 42 A Reverse recovery time - ISM TC = 25 ˚C Inverse diode forward voltage - - Page 4 1.2 - 2010-07-02 BUZ 30A H Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V Power dissipation Ptot = ƒ(TC) 130 22 W A 110 Ptot ID 100 18 16 90 14 80 12 70 60 10 50 8 40 6 30 4 20 2 10 0 0 0 20 40 60 80 100 120 ˚C 0 160 20 40 60 80 100 120 ˚C TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25˚C 160 TC Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 3 10 1 K/W A 10 0 ID ZthJC tp = 18.0µs 10 2 /ID 10 1 RD S n (o ) = V 10 -1 DS 100 µs 10 -2 1 ms D = 0.50 0.20 10 ms 10 -3 0.10 0.05 10 0 DC 10 -1 0 10 10 1 10 10 -4 2 10 -5 -7 10 V VDS Rev. 2.5 0.02 single pulse 0.01 10 -6 10 -5 10 -4 10 -3 10 -2 -1 10 s 10 0 tp Page 5 2010-07-02 BUZ 30A H Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 50 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS 0.40 Ptot = 125W kj i h g l c b a A d e Ω f VGS [V] ID 40 RDS (on)0.32 a 4.0 b 4.5 35 e c 5.0 0.28 d 5.5 30 e 6.0 f 0.24 6.5 d g 7.0 25 0.20 h 7.5 20 c i 8.0 j 9.0 k 10.0 15 0.16 f 0.12 g h i j k l 20.0 l b 10 5 0.08 0 0 VGS [V] = 0.04 a b 4.5 a 4.0 c 5.0 d 5.5 e f 6.0 6.5 g 7.0 i h 7.5 8.0 0.00 2 4 6 8 V 11 0 4 8 12 16 20 24 28 VDS 32 A 40 ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max ID l k 10.0 20.0 j 9.0 VDS≥2 x ID x RDS(on)max 45 20 A S gfs 35 16 14 30 12 25 10 20 8 15 6 10 4 5 2 0 0 0 0 1 2 3 4 5 6 7 8 V 10 Rev. 2.5 5 10 15 20 25 30 A 40 ID VGS Page 6 2010-07-02 BUZ 30A H Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: ID = 13.5 A, VGS = 10 V 0.50 4.6 Ω V 98% 4.0 VGS(th) RDS (on)0.40 3.6 0.35 3.2 0.30 2.8 typ 2.4 0.25 2% 2.0 0.20 98% 0.15 typ 1.6 1.2 0.10 0.8 0.05 0.4 0.00 -60 0.0 -60 -20 20 60 100 ˚C 160 -20 20 60 100 Typ. capacitances ˚C 160 Tj Tj Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj, tp = 80 µs C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 10 2 nF A IF C Ciss 10 0 10 1 Coss 10 -1 10 0 Crss Tj = 25 ˚C typ Tj = 150 ˚C typ Tj = 25 ˚C (98%) Tj = 150 ˚C (98%) 10 -2 0 5 10 15 20 25 30 V 10 -1 0.0 40 Rev. 2.5 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD VDS Page 7 2010-07-02 BUZ 30A H Avalanche energy EAS = ƒ(Tj) parameter: ID = 21 A, VDD = 50 V RGS = 25 Ω, L = 1.53 mH Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 32 A 500 16 mJ V EAS 400 VGS 12 350 10 300 250 0,8 VDS max 0,2 VDS max 8 200 6 150 4 100 2 50 0 20 0 40 60 80 100 120 ˚C 160 0 Tj 10 20 30 40 50 60 70 80 nC 100 QGate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 240 V 230 V(BR)DSS 225 220 215 210 205 200 195 190 185 180 -60 -20 20 60 100 ˚C 160 Tj Rev. 2.5 Page 8 2010-07-02 BUZ 30A H Package Drawing: TO220-3 Rev. 2.5 Page 9 2010-07-02 BUZ 30A H Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.5 Page 10 2010-07-02