AH315 3.3 – 3.8 GHz WiMAX 2W Driver Amplifier Applications • 802.16 WiMAX infrastructure 24-pin 5x5mm leadless QFN SMT package General Description GND / NC Vcc1 GND / NC Vbias2 Iref2 20 19 18 17 16 RF Out RF In 4 12 RF Out RF In 5 11 RF Out 10 13 GND / NC 3 9 GND / NC GND / NC GND / NC Vcc2 14 8 15 2 GND / NC 1 7 Iref1 Vbias1 6 3.3 – 3.8 GHz 25 dB Gain EVM <2.5 %@ 25 dBm Pout Internal Active Bias +5V Single Supply Voltage +33 dBm P1dB RoHS-compliant/Lead-free 5x5 mm QFN SMT package GND / NC • • • • • • • • Functional Block Diagram GND / NC Product Features Pin Configuration The AH315 is a high dynamic range broadband driver amplifier in a surface mount package. The two-stage amplifier has 25 dB of gain, while achieving +25 dBm of linear output power for 3.3–3.8 GHz WiMAX/WiBro applications. AH315 uses a high reliability +5V InGaP/GaAs HBT process technology. The device incorporates proprietary bias circuitry to compensate for variations in linearity and current draw over temperature. The device does not require any negative bias voltage; an internal active bias allows the AH315 to operate directly off a commonly used single +5V supply. The RoHS-compliant/Lead-free 5x5mm QFN package is surface mountable to allow for low manufacturing costs to the end user. Pin No. Function 1 2 4, 5 3, 6, 7, 8, 9, 10, 14, 18, 20 11, 12, 13 15 16 17 19 Backside Paddle Iref 1 Vbias1 RFin GND/NC RFout Vcc2 Iref 2 Vbias2 Vcc1 GND The AH315 is targeted for use in a configuration for the driver stage amplifier in 802.16 WiMAX base stations where high linearity and medium power is required. Ordering Information Part No. AH315-G AH315-PCB Description 3.3 – 3.8 GHz WiMAX 2W Driver Amp 3.4 – 3.6 GHz Evaluation Board Standard T/R size = 1000 pieces on a 7” reel. Data Sheet: Rev A 09/02/10 © 2010 TriQuint Semiconductor, Inc. - 1 of 9 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® AH315 3.3 – 3.8 GHz WiMAX 2W Driver Amplifier Specifications Recommended Operating Conditions Absolute Maximum Ratings Parameter Storage Temperature RF Input Power, CW, 50Ω,T = 25ºC Device Voltage, Vcc, Vbias Collector Current, Icc (Icc1 + Icc2) Iref 1 Iref 2 Device Power Thermal Resistance RTH Parameter Rating o Min Vcc +4.75 Icc @ 24 dBm TJ (for >106 hours MTTF) Operating Temp. Range -40 -55 to +125 C +19 dBm +8 V 1600 mA 100 mA 50 mA 8W 14.4 o C/W Typ +5 700 Max Units +6 +200 +85 V mA o C o C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Operation of this device outside the parameter ranges given above may cause permanent damage. Electrical Specifications Test conditions unless otherwise noted: 25ºC, +5V Vsupply, 3.4 – 3.6 GHz, in tuned application circuit. Parameter Operational Frequency Range Test Frequency Power Gain Input Return Loss Output Return Loss EVM Efficiency Output P1dB Noise Figure Device Voltage, Vcc Iref 1 Iref 2 Quiescent Current, Icq Conditions Min Typical 3.3 See Note 1. See Note 2. 3.5 25 -15.2 -11.3 2.3 8 +33 7.3 +5 27 10 600 Max Units 3.8 GHz GHz dB dB dB % % dBm dB V mA mA mA 2.5 Notes: 1. Using an 802.16-2004 OFDMA, 64QAM-1/2, 1024-FFT, 20 symbols, 30 subchannels. 2. This corresponds to the quiescent current or operating current under small-signal conditions with bias resistor R1=70Ω off pin 1 and R2=150Ω off pin 16. Data Sheet: Rev A 09/02/10 © 2010 TriQuint Semiconductor, Inc. - 2 of 9 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® AH315 3.3 – 3.8 GHz WiMAX 2W Driver Amplifier Device Characterization Data VCC = +5 V, ICQ = 600 mA, T = 25 °C, unmatched 50 ohm system, calibrated to device leads Gain vs. Frequency Output Smith Chart Input Smith Chart 30 1 0.8 25 Gain (dB) 0.6 20 0.4 5 GHz 15 5 GHz 0.2 0 10 -0.2 0 0.25 0.5 0.75 -1 -0.75-0.5- 0.25 1 5 -0.4 0.05 GHz -0.6 0.05 GHz 0 0 1 2 3 4 -0.8 5 -1 Frequency (GHz) Notes: The gain for the unmatched device in 50ohm system is shown as the trace in blue color. The impedance plots are shown from 0-5 GHz, with markers placed at 0.05 and 5 GHz. S-Parameter Data VCC = +5 V, ICQ = 600 mA, T = 25 °C, unmatched 50 ohm system, calibrated to device leads Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (angle) S22 (dB) S22 (ang) 3200 3250 3300 3350 3400 3450 3500 3550 3600 3650 3700 3750 3800 3850 3900 3950 4000 -7.15 -8.30 -9.03 -10.02 -10.60 -11.13 -11.83 -12.06 -12.42 -12.56 -12.37 -11.85 -10.99 -10.10 -9.19 -8.41 -7.90 -47.75 -67.91 -85.52 -100.73 -114.25 -121.9 -128.99 -133.37 -133.94 -134.22 -132.5 -131.84 -131.88 -134.27 -139.24 -146.73 -157.43 24.62 25.04 25.23 25.25 25.16 25.05 24.95 24.84 24.79 24.71 24.67 24.70 24.73 24.90 25.02 25.29 25.43 -121.57 -142.33 -161.71 179.97 163.19 147.33 132.15 117.52 103.11 89.24 75.18 61.44 47.15 32.58 17.14 0.702 -17.44 -46.71 -45.76 -45.35 -45.27 -45.49 -45.94 -46.35 -46.84 -47.68 -48.26 -49.27 -50.2 -51.31 -51.77 -52.57 -51.90 -50.26 81.59 65.79 52.08 38.15 25.90 14.60 3.68 -6.51 -18.83 -29.21 -43.37 -58.07 -77.27 -99.53 -125.81 -156.29 173.75 -4.82 -4.33 -4.13 -4.18 -4.38 -4.68 -5.00 -5.32 -5.62 -5.84 -6.05 -6.24 -6.49 -6.82 -7.38 -8.19 -9.28 65.17 64.24 63.23 62.35 62.37 63.12 64.61 66.87 69.29 72.04 74.47 76.46 77.95 78.63 79.17 80.03 83.45 Data Sheet: Rev A 09/02/10 © 2010 TriQuint Semiconductor, Inc. - 3 of 9 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® AH315 3.3 – 3.8 GHz WiMAX 2W Driver Amplifier 3.4 – 3.6 GHz Application Circuit (AH315-PCB) Notes: 1. 2. 3. 4. C12 to be placed as close as possible to the device. C11 = 47 pF is critical. Do Not Replace with other value. Place C19 between marking 3 and 4. See PC Board Layout on page 8 for more details. Bill of Material Ref Des U1 C1, C2, C4, C11, C15, C16, C17, C18 C3 C5, C6, C7 Value Description Manufacturer Part Number WiMax 2W Driver Amplifier TriQuint 47 pF Cap, Chip, 0805, 2%, 50V various 0.8 Pf Cap, Chip, 0603, ± 0.05 pF,50V, Accu-P AVX 1000 pF Cap, Chip, 0603, 5%, 50V, NPO-COG 4.7 uF Cap, Chip, 6032, 20%, 35V, TANT various C12 0.1 uF Cap, Chip, 0805, 5%, 25V, X7R various L1 18 nH Ind, Chip, 0603, 5%, mulilayer TOKO R1 68 Res, Chip, 0603, 5%, 1/16W various R2 150 Res, Chip, 0603, 5%, 1/16W various R3, R4, R5 0 Res, Chip, 0805, 1/10W various R6 0 Res, Chip, 0603, 5%, 1/16W various © 2010 TriQuint Semiconductor, Inc. - 4 of 9 - 06035J0R8ABTTR various C8 Data Sheet: Rev A 09/02/10 AH315-G LL1608-FSL18NJ Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® AH315 3.3 – 3.8 GHz WiMAX 2W Driver Amplifier Typical Performance 3.4 – 3.6 GHz Test conditions unless otherwise noted: Vpd, Vbias, Vcc = 5V, ICQ = 700 mA, +25 °C Frequency MHz 3.4 3.5 3.6 Gain Input Return Loss Output Return Loss Noise Figure Output P1dB EVM @ 25 dBm Pout (1) dB dB dB dB dBm % 25.4 14 10 25 15.2 11.3 7.3 +33 2.3 25 15 10 Note: 1. Using an 802.16-2004 OFDMA, 64QAM-1/2, 1024-FFT, 20 symbols, 30 subchannels. Return Loss vs. Frequency Gain vs. Frequency 27 26 5 24 -10 3 2 -15 23 1 -20 3.3 3.4 3.5 3.6 3.7 0 3.3 3.8 3.4 3.5 3.6 3.7 3.8 14 16 18 Frequency (GHz) Frequency (GHz) 20 22 24 26 Pout (dBm) Gain vs. Pout vs. Temperature EVM vs. Pout vs. Frequency 5 +85 C +25 C - 40 C 4 EVM (%) 25 OFDM, QAM-64, 54 Mb/S Freq = 3.5 GHz S11 S22 -5 S11, S22 (dB) Gain (dB) EVM vs. Pout vs. Temperature 0 Gain vs. Pout vs. Frequency 28 28 27 27 26 26 3 Gain (dB) EVM (%) 3.4 GHz 3.5 GHz 3.6 GHz 2 1 Gain (dB) OFDM, QAM-64, 54 Mb/S 4 25 24 23 +85 C +25 C - 40 C OFDM, QAM-64, 54 Mb/S Freq = 3.5 GHz 14 16 18 20 22 24 26 24 26 28 30 32 14 16 18 20 22 24 26 Pout (dBm) Current vs. Pout vs. Temperature Current vs. Pout vs. Frequency 1000 OFDM, QAM-64, 54 Mb/S Freq = 3.5 GHz OFDM, QAM-64, 54 Mb/S 900 900 +85 C +25 C - 40 C Current (mA) Current (mA) 34 Pout (dBm) 800 3.4 GHz 3.5 GHz 3.6 GHz OFDM, QAM-64, 54 Mb/S 22 22 Pout (dBm) 1000 24 23 22 0 25 700 600 3.4 GHz 3.5 GHz 3.6 GHz 800 700 600 500 500 20 22 24 26 28 30 Pout (dBm) Data Sheet: Rev A 09/02/10 © 2010 TriQuint Semiconductor, Inc. 18 20 22 24 26 28 Pout (dBm) - 5 of 9 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® AH315 3.3 – 3.8 GHz WiMAX 2W Driver Amplifier 3.3 – 3.7 GHz Applications Note: Changing Icq Biasing Configurations at +5V The AH315 can be configured to operate with lower bias current by varying the bias-adjust resistors R1 & R2. The recommended circuit configurations shown previously in this datasheet have the device operating with a 600 mA as the quiescent current (ICQ). This biasing level represents a tradeoff in terms of EVM and efficiency. Lowering ICQ will improve upon the efficiency of the device, but degrade the EVM performance. Measured data shown in the plots below represents the AH315 measured and configured for 3.5 GHz applications. It is expected that variation of the bias current for other frequency applications will produce similar performance results. R1 (ohms) 68 80 101 133 167 177 R2 Icq Vbias (ohms) (mA) (V) 150 600 +5 180 500 +5 300 400 +5 230 350 +5 230 300 +5 546 250 +5 EVM vs. Pout vs. Icq Efficiency vs. Pout vs. Icq 6 18 250 mA Icq 300 mA Icq 350 mA Icq 400 mA Icq 500 mA Icq 600 mA Icq EVM (%) 4 OFDM, QAM-64, 54 Mb/S F = 3.5 GHz 15 Efficiency (%) 5 3 2 12 250 mA Icq 300 mA Icq 350 mA Icq 400 mA Icq 500 mA Icq 600 mA Icq OFDM, QAM-64, 54 Mb/S F = 3.5 GHz 9 6 1 3 0 0 20 21 22 23 24 25 26 27 20 21 22 Pout (dBm) 23 24 25 26 27 Pout (dBm) 3.3 – 3.7 GHz Applications Note: Changing Icq Biasing Configurations at +3.3V EVM vs. Pout vs. Icq Efficiency vs. Pout vs. Icq 18 24 OFDM, QAM-64, 54 Mb/S F = 3.5 GHz EVM (%) 12 9 400 mA Icq 500 mA Icq 6 OFDM, QAM-64, 54 Mb/S F = 3.5 GHz 20 Efficiency (%) 15 16 400 mA Icq 500 mA Icq 12 3 8 4 0 0 20 21 22 23 24 25 26 27 Pout (dBm) Data Sheet: Rev A 09/02/10 © 2010 TriQuint Semiconductor, Inc. 20 21 22 23 24 25 26 27 Pout (dBm) - 6 of 9 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® AH315 3.3 – 3.8 GHz WiMAX 2W Driver Amplifier Pin Symbol 1 Iref 1 2 4, 5 3, 6, 7, 8, 9, 10, 14, 18, 20 11, 12, 13 15 Vbias1 RFin RFout Vcc2 16 Iref 2 17 19 Backside Paddle Vbias2 Vcc1 GND GND/NC 16 10 GND / NC Iref2 17 9 GND / NC Vbias2 18 8 GND / NC GND / NC 19 7 GND / NC Vcc1 20 6 GND / NC GND / NC Pin Description Description Reference current into internal active bias current mirror. Current into Iref sets device quiescent current. Also, can be used as on/off control. (for amp 1) Voltage supply for active bias for amp 1. Connect to same supply voltage as Vcc1. RF Input No internal connection. This pin can be grounded or N/C on PCB. Land pads should be provided for PCB mounting integrity. RF Output Supply Voltage for Amp2 Reference current into internal active bias current mirror. Current into Iref sets device quiescent current. Also, can be used as on/off control. (for amp 2) Voltage supply for active bias for amp 2. Connect to same supply voltage as Vcc2. Supply Voltage for Amp1 RF/DC Ground. Ensure good solder attach for best thermal and electrical performance. Applications Information PC Board Layout PCB Material: 0.0147” Rogers Ultralam 2000, single layer, 1 oz Cu, εr = 2.45 Microstrip line details: width = .042”, spacing = .050”. The silkscreen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as place markers for critical tuning components The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances. Since surface mount processes vary from company to company, careful process development is recommended. For further technical information, Refer to http://www.triquint.com/prodserv/more_info/default.aspx?prod_id=AH315 Data Sheet: Rev A 09/02/10 © 2010 TriQuint Semiconductor, Inc. - 7 of 9 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® AH315 3.3 – 3.8 GHz WiMAX 2W Driver Amplifier Mechanical Information Package Information and Dimensions Lead-free/Green/RoHS-compliant. Package pin plating - Annealed matte tin over copper. Compatible with lead-free (Tmax=260°C) and lead (Tmax=245 °C) soldering processes. The AH315-G will be marked with an “AH315G” designator on the top surface of the package. An alphanumeric lot code (“XXXX”) is also marked below the part designator. Mounting Configuration Notes: 1. 2. 3. 4. 5. 6. 7. 8. All dimensions are in millimeters (inches). Angles are in degrees Ground/Thermal vias are critical for the proper performance of this device. Vias should be .35mm (#80/.135”) diameter drill and have a final plated thru diameter of .25mm (.010”). Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. To ensure reliable operation, device ground paddleto-ground pad solder joint is critical Add mounting screws near the part to fasten board to a heat sink. Ensure that the ground/thermal via region contacts the heat sink Do not put solder mask on the backside of the PC Board in the region where the board contacts the heat sink. RF trace width depends upon the PC board construction and material Use 1oz copper minimum Data Sheet: Rev A 09/02/10 © 2010 TriQuint Semiconductor, Inc. - 8 of 9 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® AH315 3.3 – 3.8 GHz WiMAX 2W Driver Amplifier Product Compliance Information Solderability ESD Information Compatible with the latest version of J-STD-020, Lead free solder, 260° ESD Rating: Value: Test: Standard: Class 1B Passes between 500 and 1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 ESD Rating: Value: Test: Standard: Class IV Passes between 1000V and 2000V Charged Device Model (CDM) JEDEC Standard JESD22-A114 This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes: • Lead Free • Halogen Free (Chlorine, Bromine) • Antimony Free • TBBP-A (C15H12Br402) Free • PFOS Free • SVHC Free MSL Rating Level 2 at +260 °C convection reflow JEDEC standard J-STD-020. Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Email: [email protected] Tel: Fax: +1.503.615.9000 +1.503.615.8902 For technical questions and application information: Email: [email protected] Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Data Sheet: Rev A 09/02/10 © 2010 TriQuint Semiconductor, Inc. - 9 of 9 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network®