BSI BS616UV2019 Ultra low power cmos sram 128k x 16 bit Datasheet

Ultra Low Power CMOS SRAM
128K X 16 bit
BS616UV2019
Pb-Free and Green package materials are compliant to RoHS
„ FEATURES
„ DESCRIPTION
y Wide VCC low operation voltage :
C-grade : 1.8V ~ 3.6V
I-grade : 1.9V ~ 3.6V
y Ultra low power consumption :
VCC = 2.0V
Operation current : 10mA (Max.) at 85ns
1mA (Max.) at 1MHz
O
Standby current : 2/3uA (Max.) at 70/85 C
VCC = 3.0V
Operation current : 13mA (Max.) at 85ns
2mA (Max.) at 1MHz
O
Standby current : 3/5uA (Max.) at 70/85 C
y High speed access time :
-85
85ns (Max.)
-10
100ns (Max.)
y Automatic power down when chip is deselected
y Easy expansion with CE and OE options
y I/O Configuration x8/x16 selectable by LB and UB pin.
y Three state outputs and TTL compatible
y Fully static operation
y Data retention supply voltage as low as 1.5V
The BS616UV2019 is a high performance, ultra low power CMOS
Static Random Access Memory organized as 131,072 by 16 bits and
operates form a wide range of 1.8V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both
high speed and low power features with maximum CMOS standby
O
current of 3/5uA at Vcc=2/3V at 85 C and maximum access time of
85/100ns.
Easy memory expansion is provided by an active LOW chip enable
(CE) and active LOW output enable (OE) and three-state output
drivers.
The BS616UV2019 has an automatic power down feature, reducing
the power consumption significantly when chip is deselected.
The BS616UV2019 is available in DICE form, JEDEC standard
48-pin TSOP Type I package and 48-ball BGA package.
„ POWER CONSUMPTION
POWER DISSIPATION
PRODUCT
FAMILY
OPERATING
TEMPERATURE
VCC=2.0V
Commercial
O
O
+0 C to +70 C
3.0uA
2.0uA
Industrial
O
O
-40 C to +85 C
5.0uA
BS616UV2019AC
BS616UV2019TC
BS616UV2019TI
Operating
(ICCSB1, Max)
VCC=3.0V
BS616UV2019DC
BS616UV2019AI
STANDBY
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
VCC=2.0V
1MHz
fMax.
1MHz
fMax.
1.5mA
11mA
0.8mA
8mA
DICE
BGA-48-0608
TSOP I-48
3.0uA
2.0mA
„ PIN CONFIGURATIONS
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE
CE2
NC
UB
LB
NC
NC
A7
A6
A5
A4
A3
A2
A1
PKG TYPE
(ICC, Max)
VCC=3.0V
13mA
1.0mA
BGA-48-0608
10mA
TSOP I-48
„ BLOCK DIAGRAM
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
BS616UV2019TC
BS616UV2019TI
1
2
3
4
5
6
A
LB
OE
A0
A1
A2
NC
B
D8
UB
A3
A4
CE
D0
C
D9
D10
A5
A6
D1
D2
D
VSS
D11
NC
A7
D3
VCC
E
VCC
D12
NC
A16
D4
VSS
F
D14
D13
A14
A15
D5
D6
G
D15
NC
A12
A13
WE
D7
H
NC
A8
A9
A10
A11
NC
A16
NC
GND
DQ15
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE
GND
CE
A0
A6
A7
A8
A9
A10
A11
A15
A14
A13
A12
Address
1024
10
Input
Row
Buffer
Decoder
Memory Array
1024 x 2048
2048
DQ0
.
16
.
.
.
.
.
.
.
.
.
.
.
16
Data
Input
Buffer
Data
Output
Buffer
Column I/O
16
Write Driver
Sense Amp
16
128
Column Decoder
DQ15
CE2,CE
WE
OE
UB
LB
7
Control
Address Input Buffer
A16 A0
A1
A2
A3
A4
A5
VCC
VSS
48-ball BGA top view
Brilliance Semiconductor, Inc. reserves the right to change products and specifications without notice.
R0201-BS616UV2019
1
Revision
1.4
Oct.
2008
BS616UV2019
„ PIN DESCRIPTIONS
Name
Function
A0-A16 Address Input
These 17 address inputs select one of the 262,144 x 16 bit in the RAM
CE Chip Enable 1 Input
CE2 Chip Enable 2 Input
CE is active LOW and CE2 is active HIGH. Both chip enables must be active when
data read from or write to the device. If either chip enable is not active, the device is
deselected and is in standby power mode. The DQ pins will be in the high impedance
state when the device is deselected. (48B BGA ignore CE2 pin)
The write enable input is active LOW and controls read and write operations. With the
WE Write Enable Input
chip selected, when WE is HIGH and OE is LOW, output data will be present on the
DQ pins; when WE is LOW, the data present on the DQ pins will be written into the
selected memory location.
The output enable input is active LOW. If the output enable is active while the chip is
OE Output Enable Input
selected and the write enable is inactive, data will be present on the DQ pins and they
will be enabled. The DQ pins will be in the high impendence state when OE is inactive.
LB and UB Data Byte Control Input
Lower byte and upper byte data input/output control pins.
DQ0-DQ15 Data Input/Output
Ports
16 bi-directional ports are used to read data from or write data into the RAM.
VCC
Power Supply
VSS
Ground
„ TRUTH TABLE
MODE
Chip De-selected
(Power Down)
Output Disabled
Read
Write
CE
CE2(1)
WE
OE
LB
UB
H
X
X
X
X
X
High Z
High Z
ICCSB, ICCSB1
X
L
X
X
X
X
High Z
High Z
ICCSB, ICCSB1
X
X
X
X
H
H
High Z
High Z
ICCSB, ICCSB1
L
H
H
H
L
X
High Z
High Z
ICC
L
H
H
H
X
L
High Z
High Z
ICC
L
L
DOUT
DOUT
ICC
H
L
High Z
DOUT
ICC
L
H
DOUT
High Z
ICC
L
L
DIN
DIN
ICC
H
L
X
DIN
ICC
L
H
DIN
X
ICC
L
L
H
H
H
L
L
X
DQ0~DQ7 DQ8~DQ15 VCC CURRENT
1. 48BGA ignore CE2 condition.
2. H means VIH; L means VIL; X means don’t care (Must be VIH or VIL state)
R0201-BS616UV2019
2
Revision
1.4
Oct.
2008
BS616UV2019
„ ABSOLUTE MAXIMUM RATINGS (1)
SYMBOL
VTERM
TBIAS
TSTG
PARAMETER
RATING
Terminal Voltage with
Respect to GND
Temperature Under
Bias
(2)
-0.5
Storage Temperature
„ OPERATING RANGE
UNITS
RANG
AMBIENT
TEMPERATURE
V
Commercial
0 C to + 70 C
Industrial
-40 C to + 85 C
to 5.0
-40 to +125
O
C
-60 to +150
O
C
PT
Power Dissipation
1.0
W
IOUT
DC Output Current
20
mA
O
VCC
O
O
1.8V ~ 3.6V
O
1.9V ~ 3.6V
„ CAPACITANCE (1) (TA = 25OC, f = 1.0MHz)
SYMBOL PAMAMETER CONDITIONS MAX. UNITS
1. Stresses greater than those listed under ABSOLUTE
MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at these or any other conditions above those
indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
2. –2.0V in case of AC pulse width less than 30 ns.
CIN
CIO
Input
Capacitance
Input/Output
Capacitance
VIN = 0V
6
pF
VI/O = 0V
8
pF
1. This parameter is guaranteed and not 100% tested.
„ DC ELECTRICAL CHARACTERISTICS (TA = -40OC to +85OC)
PARAMETER
NAME
PARAMETER
VCC
Power Supply
VIL
Input Low Voltage
VIH
Input High Voltage
IIL
Input Leakage Current
ILO
Output Leakage Current
VOL
Output Low Voltage
VOH
Output High Voltage
ICC(5)
Operating Power Supply
Current
ICC1
Operating Power Supply
Current
TEST CONDITIONS
VCC=2.0V
VCC=3.0V
(7)
Standby Current – TTL
Standby Current – CMOS
3.6
V
(2)
-0.3
1
uA
--
--
VCC = Min, IOH = -1.0mA
VCC=3.0V
2.4
IIO = 0mA, f = FMAX
CE = VIL and CE2
(7)
VCC=3.0V
VCC=2.0V
= VIH,
IIO = 0mA, f = 1MHz
CE = VIH or CE2
VCC=3.0V
VCC=2.0V
= VIL,
IIO = 0mA
VCC=3.0V
CE≧VCC-0.2V or CE2 ≦0.2V,
VCC=2.0V
VIN ≧VCC-0.2V or V IN ≦0.2V
VCC=3.0V
O
V
--
1.6
VCC=2.0V
(3)
--
VCC=2.0V
= VIH,
VCC+0.3
uA
VCC = Min, IOH = -0.1mA
(4)
V
0.8
1
VCC = Max, IOL = 2.0mA
(7)
--
0.6
--
VCC=3.0V
CE = VIL and CE2
--
--
VCC=2.0V
--
--
--
--
--
--
--
--
0.2
V
0.4
--
V
10
mA
13
1.0
mA
2.0
0.5
mA
1.0
0.2
3.0
0.3
5.0
uA
O
1. Typical characteristics are at TA=25 C and not 100% tested.
2. Undershoot: -1.0V in case of pulse width less than 20 ns.
3. Overshoot: VCC+1.0V in case of pulse width less than 20 ns.
4. FMAX=1/tRC.
R0201-BS616UV2019
--
VCC = Max, IOL = 0.1mA
(7)
ICCSB1(6)
1.9
2.2
= VIL or OE = V IH
(7)
ICCSB
UNITS
VCC=3.0V
= VIL
(7)
MAX.
1.4
VI/O = 0V to VCC,
CE= VIH or CE2
TYP.(1)
VCC=2.0V
VIN = 0V to VCC
CE= VIH or CE2
MIN.
5. ICC (MAX.) is 8mA/11mA at VCC=2.0V/3.0V and TA=70 C.
O
6. ICCSB1(MAX.) is 2.0uA/3.0uA at VCC=2.0V/3.0V and TA=70 C.
7. 48B BGA ignore CE2 condition.
3
Revision
1.4
Oct.
2008
BS616UV2019
„ DATA RETENTION CHARACTERISTICS (TA = -40OC to +85OC)
SYMBOL
PARAMETER
TEST CONDITIONS
MIN.
TYP. (1)
MAX.
UNITS
1.5
--
--
V
--
0.1
1.0
uA
0
--
--
ns
--
--
ns
(4)
VDR
VCC for Data Retention
ICCDR(3)
Data Retention Current
CE≧VCC-0.2V or CE2 ≦0.2V,
VIN≧VCC-0.2V or VIN≦0.2V
(4)
CE≧VCC-0.2V or CE2 ≦0.2V,
VIN≧VCC-0.2V or VIN≦0.2V
Chip Deselect to Data
tCDR
Retention Time
tR
See Retention Waveform
Operation Recovery Time
tRC
(2)
O
1. VCC=1.5V, TA=25 C and not 100% tested.
2. tRC = Read Cycle Time.
O
3. ICCDR(Max.) is 0.7uA at TA=70 C.
4. 48B BGA ignore CE2 condition
„ LOW VCC DATA RETENTION WAVEFORM (1) (CE Controlled)
Data Retention Mode
VCC
VDR≧1.5V
VCC
tCDR
tR
CE≧VCC - 0.2V
VIH
CE
VCC
VIH
„ LOW VCC DATA RETENTION WAVEFORM (2) (CE2 Controlled)
Data Retention Mode
VDR≧1.5V
VCC
tCDR
CE2
VCC
tR
CE2≦0.2V
VIL
VIL
„ KEY TO SWITCHING WAVEFORMS
„ AC TEST CONDITIONS
(Test Load and Input/Output Reference)
Input Pulse Levels
Vcc / 0V
Input Rise and Fall Times
1V/ns
Input and Output Timing
Reference Level
0.5Vcc
Output Load
WAVEFORM
tCLZ, tOLZ, tCHZ, tOHZ, tWHZ
CL = 5pF+1TTL
Others
CL = 30pF+1TTL
ALL INPUT PULSES
1 TTL
Output
(1)
VCC
GND
CL
90%
10%
→ ←
Rise Time:
1V/ns
90%
10%
→ ←
Fall Time:
1V/ns
INPUTS
OUTPUTS
MUST BE
STEADY
MUST BE
STEADY
MAY CHANGE
FROM “H” TO “L”
WILL BE CHANGE
FROM “H” TO “L”
MAY CHANGE
FROM “L” TO “H”
WILL BE CHANGE
FROM “L” TO “H”
DON’T CARE
ANY CHANGE
PERMITTED
CHANGE :
STATE UNKNOW
DOES NOT
APPLY
CENTER LINE IS
HIGH INPEDANCE
“OFF” STATE
1. Including jig and scope capacitance.
R0201-BS616UV2019
4
Revision
1.4
Oct.
2008
BS616UV2019
„ AC ELECTRICAL CHARACTERISTICS (TA = -40OC to +85OC)
READ CYCLE
JEDEC
PARANETER
PARAMETER
NAME
NAME
DESCRIPTION
CYCLE TIME : 85ns
(VCC=1.9~3.6V)
CYCLE TIME : 100ns
(VCC=1.9~3.6V)
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
UNITS
tAVAX
tRC
Read Cycle Time
85
--
--
100
--
--
ns
tAVQX
tAA
Address Access Time
--
--
85
--
--
100
ns
tELQV1
tACS1
Chip Select Access Time
(CE)
--
--
85
--
--
100
ns
tELQV2
tACS2
Chip Select Access Time
(CE2)
--
--
85
--
--
100
ns
tBLQV
tBA
Data Byte Control Access Time
(LB, UB)
--
--
85
--
--
100
ns
tGLQV
tOE
Output Enable to Output Valid
--
--
40
--
--
50
ns
tELQX1
tCLZ1
Chip Select to Output Low Z
(CE)
15
--
--
15
--
--
ns
tELQX2
tCLZ2
Chip Select to Output Low Z
(CE2)
15
--
--
15
--
--
ns
tBLQX
tBE
Data Byte Control to Output Low Z
(LB, UB)
15
--
--
15
--
--
ns
tGLQX
tOLZ
Output Enable to Output Low Z
15
--
--
15
--
--
ns
tEHQZ1
tCHZ1
Chip Select to Output High Z
(CE)
--
--
35
--
--
40
ns
tEHQZ2
tCHZ2
Chip Select to Output High Z
(CE2)
--
--
35
--
--
40
ns
tBHQZ
tBDO
Data Byte Control to Output High Z (LB, UB)
--
--
35
--
--
40
ns
tGHQZ
tOHZ
Output Enable to Output High Z
--
--
30
--
--
35
ns
tAVQX
tOH
Data Hold from Address Change
15
--
--
15
--
--
ns
„ SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE 1 (1,2,4)
tRC
ADDRESS
tOH
tAA
tOH
DOUT
R0201-BS616UV2019
5
Revision
1.4
Oct.
2008
BS616UV2019
READ CYCLE 2 (1,3,4)
CE
tACS1
CE2
DOUT
tACS2(6)
tCLZ
tCHZ(5, 6)
(5,6)
READ CYCLE 3 (1, 4)
tRC
ADDRESS
tAA
OE
tOE
tOH
tOLZ
CE
tACS1
CE2
tOHZ(5)
tACS2(6)
tCLZ
(5,6)
tCHZ(1,5,6)
tBA
LB, UB
tBE
tBDO
DOUT
NOTES:
1. WE is high in read Cycle.
2. Device is continuously selected when CE = VIL and CE2= VIH.
3. Address valid prior to or coincident with CE transition low and/or CE2 transition high.
4. OE = VIL.
5. Transition is measured ± 500mV from steady state with CL = 5pF.
The parameter is guaranteed but not 100% tested.
6. 48B BGA ignore this parameters related to CE2.
R0201-BS616UV2019
6
Revision
1.4
Oct.
2008
BS616UV2019
„ AC ELECTRICAL CHARACTERISTICS (TA = -40OC to +85OC)
WRITE CYCLE
JEDEC
PARANETER
PARAMETER
NAME
NAME
DESCRIPTION
CYCLE TIME : 85ns
(VCC=1.9~3.6V)
CYCLE TIME : 100ns
(VCC=1.9~3.6V)
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
UNITS
tAVAX
tWC
Write Cycle Time
85
--
--
100
--
--
ns
tAVWL
tAS
Address Set up Time
0
--
--
0
--
--
ns
tAVWH
tAW
Address Valid to End of Write
85
--
--
100
--
--
ns
tELWH
tCW
Chip Select to End of Write
85
--
--
100
--
--
ns
tBLWH
tBW
Data Byte Control to End of Write
50
--
--
70
--
--
ns
tWLWH
tWP
Write Pulse Width
40
--
--
50
--
--
ns
tWHAX1
tWR1
Write Recovery Time
(CE, WE)
0
--
--
0
--
--
ns
tWHAX2
tWR2
Write Recovery Time
(CE2)
0
--
--
0
--
--
ns
tWLQZ
tWHZ
Write to Output High Z
--
--
35
--
--
40
ns
tDVWH
tDW
Data to Write Time Overlap
35
--
--
40
--
--
ns
tWHDX
tDH
Data Hold from Write Time
0
--
--
0
--
--
ns
tGHQZ
tOHZ
Output Disable to Output in High Z
--
--
35
--
--
40
ns
tWHQX
tOW
End of Write to Output Active
10
--
--
10
--
--
ns
(LB, UB)
„ SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE 1 (1)
tWC
ADDRESS
OE
tCW
CE
(5)
CE2
(5,12)
tWR1(3)
(11)
tCW(11)
tWR2(3)
tBW
LB, UB
tAW
WE
tWP(2)
tAS
tOHZ(4,10)
DOUT
tDH
tDW
DIN
R0201-BS616UV2019
7
Revision
1.4
Oct.
2008
BS616UV2019
WRITE CYCLE 2 (1,6)
tWC
ADDRESS
CE
tCW(11)
(5)
CE2
(5,12)
tBW
(5)
LB, UB
tAW
WE
tAS
tWR(3)
tWP(2)
tWHZ(4,10)
tOW
(7)
(8)
DOUT
tDW
tDH
(8,9)
DIN
NOTES:
1. WE must be high during address transitions.
2. The internal write time of the memory is defined by the overlap of CE and CE2 active and WE
low. All signals must be active to initiate a write and any one signal can terminate a write by
going inactive. The data input setup and hold timing should be referenced to the second
transition edge of the signal that terminates the write.
3. tWR is measured from the earlier of CE or WE going high or CE2 going low at the end of write
cycle.
4. During this period, DQ pins are in the output state so that the input signals of opposite phase to
the outputs must not be applied.
5. If the CE low transition or the CE2 high transition occurs simultaneously with the WE low
transitions or after the WE transition, output remain in a high impedance state.
6. OE is continuously low (OE = VIL).
7. DOUT is the same phase of write data of this write cycle.
8. DOUT is the read data of next address.
9. If CE is low and CE2 is high during this period, DQ pins are in the output state. Then the data
input signals of opposite phase to the outputs must not be applied to them.
10.Transition is measured ± 500mV from steady state with CL = 5pF.
The parameter is guaranteed but not 100% tested.
11.tCW is measured from the later of CE going low or CE2 going high to the end of write.
12.48B BGA ignore this parameters related to CE2.
R0201-BS616UV2019
8
Revision
1.4
Oct.
2008
BS616UV2019
„ ORDERING INFORMATION
BS616UV2019
X
X
Z
YY
SPEED
85: 85ns
10: 100ns
PKG MATERIAL
G: Green, RoHS Compliant
P: Pb free, RoHS Compliant
GRADE
o
o
C: +0 C ~ +70 C
o
o
I: -40 C ~ +85 C
PACKAGE
D: DICE
A: BGA-48-0608
T: TSOP I-48
Note:
BSI (Brilliance Semiconductor Inc.) assumes no responsibility for the application or use of any product or circuit described herein. BSI does
not authorize its products for use as critical components in any application in which the failure of the BSI product may be expected to result
in significant injury or death, including life-support systems and critical medical instruments.
„ PACKAGE DIMENSIONS
UNIT
SYMBO
HD
12°(2X)
1
12°(2X)
e
4
b
2
2
E
Seating
12°(2x)
y
"A"
D
A
A
A1
A2
b
b1
c
c1
D
E
e
HD
L
L1
y
θ
INCH
0.0433±0.004
0.004±0.002
0.039±0.002
0.009±0.002
0.008±0.001
0.004 ~ 0.008
0.004 ~ 0.006
0.645±0.004
0.472±0.004
0.020±0.004
0.708±0.008
0.0236±0.006
0.0315±
0.004 Max.
0°~8°
MM
1.10±0.10
0.10±0.05
1.00±0.05
0.22±0.05
0.20±0.03
0.10 ~ 0.21
0.10 ~ 0.16
16.40±0.10
11.80±0.10
0.50±0.10
18.00±0.20
0.60±0.15
0.80±0.10
0.1 Max.
0°~8°
A2
GAUGE PLANE
A
A1
2
2
θ
SEATING PLANE
A
12°(2x)
WITH PLATING
b
"A" DETAIL VIEW
L
L1
c c
BASE METAL
b1
SECTION A-A
1
4
TSOP I-48 Pin
R0201-BS616UV2019
9
Revision
1.4
Oct.
2008
BS616UV2019
„ PACKAGE DIMENSIONS (continued)
1: CONTROLLING DIMENSIONS ARE IN MILLIMETERS.
2: PIN#1 DOT MARKING BY LASER OR PAD PRINT.
1.2 Max.
3: SYMBOL "N" IS THE NUMBER OF SOLDER BALLS.
BALL PITCH e = 0.75
D
E
N
D1
E1
8.0
6.0
48
5.25
3.75
E1
e
D1
VIEW A
48 mini-BGA (6 x 8mm)
R0201-BS616UV2019
10
Revision
1.4
Oct.
2008
BS616UV2019
„ Revision History
Revision No.
History
Draft Date
1.2
Add Icc1 characteristic parameter
Jan. 13, 2006
1.3
Change I-grade operation temperature range
- from –25OC to –40OC
May. 25, 2006
1.4
Typical value of standby current is replaced by
maximum value in Featues and Description
section
Oct. 31, 2008
Remark
Remove “-: Normal” (Leaded) PKG Material in
ordering information
R0201-BS616UV2019
11
Revision
1.4
Oct.
2008
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