Weitron BC5347B General purpose transistor npn silicon Datasheet

BC5347B
General Purpose Transistor
NPN Silicon
COLLECTOR
3
3
1
1
BASE
*Moisture Sensitivity Level: 1
*ESD Rating - Human Body Model:>4000V
-Machine Model:>400V
2
SOT-23
2
EMITTER
M aximum R atings ( TA=25 C unless otherwise noted)
Rating
Collector-Emitter Voltage
Symbol
VCEO
Value
45
Unit
Vdc
Collector-Base Voltage
VCBO
50
Vdc
Emitter-Base VOltage
VEBO
6.0
Vdc
IC
100
mAdc
Collector Current-Continuous
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board
(Note 1.)TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient (Note 1.)
Total Device Dissipation Alumina
Substrate, (Note 2.) TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient(Note 2.)
Junction and Storage, Temperature Range
Device Marking
BC5347B=1F
1.FR-5=1.0 x 0.75 x 0.062 in.
2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina
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Symbol
PD
Max
Unit
225
1.8
mW
mW/ C
C/W
R θJA
556
PD
300
2.4
R θJA
417
mW
mW/ C
C/W
TJ,Tstg
-55 to +150
C
BC5347B
Electrical Characteristics
WE IT R ON
(TA=25 C Unless Otherwise noted)
Characteristics
Symbol
Min
Typ
Max
Unit
Off Characteristics
Collector-Emitter Breakdown Voltage
(IC= 10mA)
V(BR)CEO
45
-
-
V
Collector-Emitter Breakdown Voltage
(IC=10 µA ,VEB=0)
V(BR)CES
50
-
-
V
Collector-Base Breakdown Voltage
(IC=10 µA)
V(BR)CBO
50
-
-
V
Emitter-Base Breakdown Voltage
(IE=1.0 µA)
V(BR)EBO
6.0
-
-
V
ICBO
-
-
15
5.0
nA
mA
-
150
-
200
290
450
Collector Cutoff Current (VCB=30V)
(VCB=30V, TA=150 C)
On Characteristics
DC Current Gain
(IC= 10µA, VCE=5.0V)
(IC= 2.0mA, VCE=5.0V)
hFE
-
Collector-Emitter Saturation Voltage
(IC= 10mA, IB=0.5mA)
(IC= 100mA, IB=5.0mA)
VCE(sat)
-
-
0.25
0.6
Base-Emitter Saturation Voltage
(IC= 10mA, IB=0.5mA)
(IC= 100mA, IB=5.0mA)
VBE(sat)
-
-0.7
-0.9
-
Base-Emitter On Voltage
(IC= 2.0mA, VCE=5.0V)
(IC= 10mA, VCE=5.0V)
VBE(on)
580
-
660
-
700
770
fT
100
-
-
MHz
Cobo
-
-
4.5
pF
NF
-
-
10
dB
V
V
V
Small-signal Characteristics
Current-Gain-Bandwidth Product
(IC= 10mA, VCE= 5.0Vdc, f=100MHz)
Output Capacitance
(VCB= 10V, f=1.0MHz)
Noise Figure
(IC= 0.2mA, VCE= 5.0Vdc, Rs=2.0 k Ω,
f=1.0 kHz, BW=200Hz)
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WE IT R ON
1.0
2.0
VCE=10V
TA=25 C
1.5
TA=25 C
0.9
V, VOLTAGE (VOLTS)
hFE,NORMALIZED DC CURRENT GAIN
BC5347B
1.0
0.8
0.6
0.4
0.8
VBE(sat)@IC/BC=10
0.7
VBE(ON)@VCE= 10V
0.6
0.5
0.4
0.3
0.2
0.3
VCE(sat)@IC/BC=10
0.1
0.2
0.2
0.5
1.0
2.0
5.0
10
20
50
100
0
0.1
200
2.0
1.6
IC= 200mA
1.2
IC=
10mA
IC= 20mA
0.4
0
IC= 100mA
IC=-50mA
0.02
0.1
1.0
10
20
C,CAPACITANCE (pF)
Cib
3.0
Cob
1.0
0.4
0.6 0.8 1.0
2.0
4.0
6.0 8.0 10
20
VR, REVERSE VOLTAGE (VOLTS)
FIG.5 Capacitances
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40
fT, CURRENT-GAIN-BANDWIDTH PRODUCT (MHz)
TA=25 C
2.0
5.0 7.0 10
20 30 50
70 100
-55 C to +125 C
1.2
1.6
2.0
2.4
2.8
0.2
1.0
10
IC, COLLECTOR CURRENT (mA)
100
FIG.4 Base-Emitter Temperature Coefficient
10
5.0
2.0 3.0
1.0
IB, BASE CURRENT (mA)
FIG.3 Collector Saturation Region
7.0
0.5 0.7 1.0
FIG.2 "Saturation" And "On" Voltage
TA=25 C
0.8
0.2 0.3
IC, COLLECTOR CURRENT (mAdc)
qVB, TEMPERATURE COEFFICIENT (mV/ C)
VCE, COLLECTOR- EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (mAdc)
FIG.1 Normalized DC Current Gain
400
300
200
VCE=10V
TA= 25 C
100
80
60
40
30
20
0.5 0.7 1.0
2.0
3.0
5.0
7.0
10
20
30
IC, COLLECTOR CURRENT (mAdc)
FIG.6 Current-Gain- Bandwidth Product
50
BC5347B
SOT-23 Package Outline Dimensions
Unit:mm
A
B
T OP V IE W
E
G
Dim Min Max
A
0.35 0.51
B
1.19 1.40
C
2.10 3.00
D
0.85 1.05
E
0.46 1.00
G
1.70 2.10
H
2.70 3.10
J
0.01 0.13
K
0.89 1.10
L
0.30 0.61
M 0.076 0.25
C
D
H
K
J
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L
M
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