BC5347B General Purpose Transistor NPN Silicon COLLECTOR 3 3 1 1 BASE *Moisture Sensitivity Level: 1 *ESD Rating - Human Body Model:>4000V -Machine Model:>400V 2 SOT-23 2 EMITTER M aximum R atings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Symbol VCEO Value 45 Unit Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base VOltage VEBO 6.0 Vdc IC 100 mAdc Collector Current-Continuous Thermal Characteristics Characteristics Total Device Dissipation FR-5 Board (Note 1.)TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient (Note 1.) Total Device Dissipation Alumina Substrate, (Note 2.) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient(Note 2.) Junction and Storage, Temperature Range Device Marking BC5347B=1F 1.FR-5=1.0 x 0.75 x 0.062 in. 2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina WE ITR O N http://www.weitron.com.tw Symbol PD Max Unit 225 1.8 mW mW/ C C/W R θJA 556 PD 300 2.4 R θJA 417 mW mW/ C C/W TJ,Tstg -55 to +150 C BC5347B Electrical Characteristics WE IT R ON (TA=25 C Unless Otherwise noted) Characteristics Symbol Min Typ Max Unit Off Characteristics Collector-Emitter Breakdown Voltage (IC= 10mA) V(BR)CEO 45 - - V Collector-Emitter Breakdown Voltage (IC=10 µA ,VEB=0) V(BR)CES 50 - - V Collector-Base Breakdown Voltage (IC=10 µA) V(BR)CBO 50 - - V Emitter-Base Breakdown Voltage (IE=1.0 µA) V(BR)EBO 6.0 - - V ICBO - - 15 5.0 nA mA - 150 - 200 290 450 Collector Cutoff Current (VCB=30V) (VCB=30V, TA=150 C) On Characteristics DC Current Gain (IC= 10µA, VCE=5.0V) (IC= 2.0mA, VCE=5.0V) hFE - Collector-Emitter Saturation Voltage (IC= 10mA, IB=0.5mA) (IC= 100mA, IB=5.0mA) VCE(sat) - - 0.25 0.6 Base-Emitter Saturation Voltage (IC= 10mA, IB=0.5mA) (IC= 100mA, IB=5.0mA) VBE(sat) - -0.7 -0.9 - Base-Emitter On Voltage (IC= 2.0mA, VCE=5.0V) (IC= 10mA, VCE=5.0V) VBE(on) 580 - 660 - 700 770 fT 100 - - MHz Cobo - - 4.5 pF NF - - 10 dB V V V Small-signal Characteristics Current-Gain-Bandwidth Product (IC= 10mA, VCE= 5.0Vdc, f=100MHz) Output Capacitance (VCB= 10V, f=1.0MHz) Noise Figure (IC= 0.2mA, VCE= 5.0Vdc, Rs=2.0 k Ω, f=1.0 kHz, BW=200Hz) WEITRON http://www.weitron.com.tw WE IT R ON 1.0 2.0 VCE=10V TA=25 C 1.5 TA=25 C 0.9 V, VOLTAGE (VOLTS) hFE,NORMALIZED DC CURRENT GAIN BC5347B 1.0 0.8 0.6 0.4 0.8 VBE(sat)@IC/BC=10 0.7 VBE(ON)@VCE= 10V 0.6 0.5 0.4 0.3 0.2 0.3 VCE(sat)@IC/BC=10 0.1 0.2 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0 0.1 200 2.0 1.6 IC= 200mA 1.2 IC= 10mA IC= 20mA 0.4 0 IC= 100mA IC=-50mA 0.02 0.1 1.0 10 20 C,CAPACITANCE (pF) Cib 3.0 Cob 1.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 VR, REVERSE VOLTAGE (VOLTS) FIG.5 Capacitances WEITRON http://www.weitron.com.tw 40 fT, CURRENT-GAIN-BANDWIDTH PRODUCT (MHz) TA=25 C 2.0 5.0 7.0 10 20 30 50 70 100 -55 C to +125 C 1.2 1.6 2.0 2.4 2.8 0.2 1.0 10 IC, COLLECTOR CURRENT (mA) 100 FIG.4 Base-Emitter Temperature Coefficient 10 5.0 2.0 3.0 1.0 IB, BASE CURRENT (mA) FIG.3 Collector Saturation Region 7.0 0.5 0.7 1.0 FIG.2 "Saturation" And "On" Voltage TA=25 C 0.8 0.2 0.3 IC, COLLECTOR CURRENT (mAdc) qVB, TEMPERATURE COEFFICIENT (mV/ C) VCE, COLLECTOR- EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (mAdc) FIG.1 Normalized DC Current Gain 400 300 200 VCE=10V TA= 25 C 100 80 60 40 30 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) FIG.6 Current-Gain- Bandwidth Product 50 BC5347B SOT-23 Package Outline Dimensions Unit:mm A B T OP V IE W E G Dim Min Max A 0.35 0.51 B 1.19 1.40 C 2.10 3.00 D 0.85 1.05 E 0.46 1.00 G 1.70 2.10 H 2.70 3.10 J 0.01 0.13 K 0.89 1.10 L 0.30 0.61 M 0.076 0.25 C D H K J WEITRON http://www.weitron.com.tw L M