ISC BUK455-200B High speed switching Datasheet

isc Product Specification
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
BUK455-200A/B
DESCRIPTION
·High speed switching
APPLICATIONS
·use in Switched Mode Power Supplies (SMPS),
motor control,welding, And in general purpose switching
resistance application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
200
V
VGS
Gate-Source Voltage
±30
V
ID
Ptot
Tj
Tstg
Drain
Current-continuou
[email protected] TC=37℃
BUK455-200A
14
BUK455-200B
13
A
Total [email protected]=25℃
125
W
Max. Operating Junction Temperature
175
℃
Storage Temperature Range
175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.2
℃/W
Rth j-a
Thermal Resistance,Junction to Ambient
60
℃/W
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isc Product Specification
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
BUK455-200A/B
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
200
VGS(TH)
Gate Threshold Voltage
VDS= VGS; ID= 1mA
2.1
RDS(ON)
Drain-Source On-stage Resistance
VGS= 10V;
ID= 7A
IGSS
Gate Source Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VSD
Diode Forward Voltage
isc website:www.iscsemi.cn
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MAX
UNIT
V
4
BUK455-200A
0.23
BUK455-200B
0.28
V
Ω
±100
nA
VDS= 200V;VGS= 0
10
uA
IF= 14A;VGS= 0
1.5
V
2
isc & iscsemi is registered trademark
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