CJP02N60 TO-220-3L Plastic-Encapsulate MOSFETS CJP02N60 N-Channel Power MOSFET TO-220-3L General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition , this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes . The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power suppliers, converters and PWM motor controls , these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. 1. GATE 2. DRAIN 3. SOURCE FEATURES z Robust High Voltage Termination z Avalanche Energy Specified z Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode z Diode is Characterized for Use in Bridge Circuits z IDSS and VDS(on) Specified at Elevated Temperature Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Value 600 Unit V VGS ±20 Continuous Drain Current ID 2 Pulsed Drain Current IDM 8 Power Dissipation PD 2 Single Pulsed Avalanche Energy* EAS 128 mJ Thermal Resistance, Junction-to-Ambient R θJA 62.5 ℃/W Junction Temperature TJ 150 Storage Temperature TSTG -50 ~+150 A W ℃ *EAS condition: Tj=25℃,VDD=50V,L=64mH,IAS=2A,RG=25Ω [email protected] www.zpsemi.com 1 of 3 CJP02N60 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Drain-Source Breakdown Voltage Symbol Test Condition Min Typ Max Unit V(BR) DSS VGS = 0V, ID =250µA 600 VGS(th) VDS =VGS, ID =250µA 2.0 Gate-Body Leakage Current (note1) IGSS VDS =0V, VGS =±20V ±100 Zero Gate Voltage Drain Current IDSS VDS =600V, VGS =0V 25 µA RDS(on) VGS =10V, ID =1A 4.4 Ω Forward Transconductance (note1) gFS VDS =50V, ID =1A Input Capacitance (note 2) Ciss Output Capacitance (note 2) Coss Reverse Transfer Capacitance (note 2) Crss Turn-On Delay Time (note 2) td(on) Gate-Threshold Voltage (note1) Drain-Source On-State Resistance (note1) Rise Time (note 2) Turn-Off Delay Time (note 2) Fall Time (note 2) Forward on Voltage(note1) VDS =25V,VGS =0V, f =1MHz 4.0 1 V nA S 435 pF 56 9.2 12 tr VDD=300V,ID=2A, 21 td(off) VGS=10V,RG=18Ω 30 tf ns 24 VSD VGS =0V, IS=2A 1.6 V Notes: 1. Pulse Test : Pulse width≤300µs, duty cycle ≤2%. 2. These parameters have no way to verify. [email protected] www.zpsemi.com 2 of 3 CJP02N60 Output Characteristics Transfer Characteristics 1.0 3.0 VDS=10V Pulsed Pulsed VGS= 6V、 8V、10V VGS=5.5V (A) (A) 2.5 DRAIN CURRENT ID DRAIN CURRENT 1.5 VGS=5V 1.0 0.5 0.0 Ta=100℃ ID 2.0 Ta=25℃ 0.5 VGS=4.5V 0 6 12 18 DRAIN TO SOURCE VOLTAGE 24 VDS 0.0 30 0 (V) 1 2 3 4 5 GATE TO SOURCE VOLTAGE RDS(ON) —— ID VGS 6 RDS(ON) —— VGS 30 10 Pulsed ID=1A Ta=25℃ Pulsed 25 ( Ω) VGS=10V 4 RDS(ON) 6 20 ON-RESISTANCE RDS(ON) ( Ω) 8 ON-RESISTANCE 7 (V) 15 2 0 Ta=25℃ Ta=100℃ 10 5 1 0.1 2 3 DRAIN CURRENT ID 4 0 5 2 (A) 4 6 8 10 GATE TO SOURCE VOLTAGE VGS 12 (V) Threshold Voltage IS —— VSD 5 4 Pulsed 4 ID=250uA VTH THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) 1 0.1 Ta=100℃ Ta=25℃ 0.01 1E-3 0.0 0.4 0.8 SOURCE TO DRAIN VOLTAGE [email protected] 1.2 1.6 3 2 1 0 25 VSD (V) 50 75 JUNCTION TEMPERATURE www.zpsemi.com 100 TJ 125 (℃ ) 3 of 3