ASI ASI10656 Npn silicon rf power transistor Datasheet

TVV010
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .380 4L STUD
DESCRIPTION:
The ASI TVV010 is Designed for
.112x45°
A
B
D
FEATURES:
S
•
•
• Omnigold™ Metalization System
ØC
S
G
D
H
I
J
MAXIMUM RATINGS
F
IC
10 A
VCB
60 V
VCE
35 V
E
PDISS
140 W @ TC = 25 OC
TJ
-65 OC to +200 OC
O
O
TSTG
-65 C to +150 C
θ JC
2.2 OC/W
CHARACTERISTICS
SYMBOL
G
#8-32 UNC-2A
MAXIMUM
DIM
MINIMUM
inches / mm
inches / mm
A
.220 / 5.59
.230 / 5.84
B
.980 / 24.89
C
.370 / 9.40
.385 / 9.78
D
.004 / 0.10
.007 / 0.18
E
.320 / 8.13
.330 / 8.38
F
.100 / 2.54
.130 / 3.30
G
.450 / 11.43
.490 / 12.45
H
.090 / 2.29
.100 / 2.54
I
.155 / 3.94
.175 / 4.45
.750 / 19.05
J
ORDER CODE: ASI10656
O
TC = 25 C
NONETEST CONDITIONS
BVCEO
IC = 50 mA
BVCER
IC = 50 mA
BVEBO
IE = 10 mA
ICES
VE = 28 V
hFE
VCE = 5.0 V
IC = 1.0 A
PGE
VCE = 25 V
IC = 1600 mA
IMD1
POUT = 10 W
RBE = 10 Ω
MINIMUM TYPICAL MAXIMUM
V
60
V
4.0
V
10
f = 225 MHz
UNITS
35
5
mA
100
---
10
dB
-54
dBc
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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