AP38028EM
Halogen-Free Product
Advanced Power
Electronics Corp.
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
D2
D2
▼ Low On-resistance
D1
D1
▼ Fast Switching Performance
G2
▼ RoHS Compliant & Halogen-Free
SO-8
S1
BVDSS
30V
RDS(ON)
28mΩ
ID
6.6A
S2
G1
Description
AP38028E series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
applications.
D1
G1
D2
G2
S1
S2
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Drain Current, VGS @ 10V
3
Drain Current, VGS @ 10V
3
.
1
Rating
Units
30
V
+20
V
6.6
A
5.3
A
30
A
2
W
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Value
Unit
Maximum Thermal Resistance, Junction-ambient3
62.5
℃/W
Data and specifications subject to change without notice
1
201608151
AP38028EM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
30
-
-
V
VGS=10V, ID=6A
-
-
28
mΩ
VGS=4.5V, ID=4A
-
-
42
mΩ
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=6A
-
18
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+30
uA
Qg
Total Gate Charge
ID=4A
-
7.2
11.5
nC
Qgs
Gate-Source Charge
VDS=15V
-
2.4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
2.5
-
nC
td(on)
Turn-on Delay Time
VDS=15V
-
6
-
ns
tr
Rise Time
ID=1A
-
8
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
17
-
ns
tf
Fall Time
VGS=10V
-
3
-
ns
Ciss
Input Capacitance
VGS=0V
-
830
1330
pF
Coss
Output Capacitance
VDS=15V
-
95
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
80
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.4
2.8
Ω
Min.
Typ.
IS=1.7A, VGS=0V
-
-
1.2
V
.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=6A, VGS=0V,
-
9.3
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
2.7
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board, t <10sec ; 135 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP38028EM
20
30
10V
7.0V
6.0V
5.0V
V G = 4.0V
20
10V
7.0V
6.0V
5.0V
V G =4.0V
o
T A = 150 C
16
ID , Drain Current (A)
ID , Drain Current (A)
T A =25 o C
10
12
8
4
0
0
0
1
2
3
4
0
1
V DS , Drain-to-Source Voltage (V)
2
3
4
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
22
ID=6A
V G = 10 V
ID=4A
T A =25 o C
20
18
16
.
Normalized RDS(ON)
RDS(ON) (mΩ)
1.6
1.2
0.8
14
0.4
12
0.0
10
2
4
6
8
10
-100
-50
0
50
100
150
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
10
I D =250uA
1.6
Normalized VGS(th)
IS(A)
8
6
T j =150 o C
T j =25 o C
4
2
1.2
0.8
0.4
0
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-100
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP38028EM
f=1.0MHz
6
1250
ID=4A
V DS =15V
1050
4
850
C (pF)
VGS , Gate to Source Voltage (V)
5
3
C iss
650
2
450
1
250
C oss
C rss
0
50
0
2
4
6
8
10
12
1
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
33
37
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
ID (A)
10
100us
1ms
1
.
10ms
100ms
0.1
T A =25 o C
Single Pulse
1s
DC
Normalized Thermal Response (Rthja)
Duty factor=0.5
Operation in this area
limited by RDS(ON)
0.2
0.1
0.1
0.05
PDM
t
T
0.02
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja=135℃/W
Single Pulse
0.01
0.01
0.01
0.1
1
10
0.0001
100
0.001
0.01
V DS , Drain-to-Source Voltage (V)
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
2.5
10
2
8
ID , Drain Current (A)
PD, Power Dissipation(W)
0.1
1.5
1
6
4
2
0.5
0
0
0
50
100
T A , Ambient Temperature( o C)
Fig 11. Total Power Dissipation
150
25
50
75
100
125
150
T A , Ambient Temperature ( o C )
Fig 12. Drain Current v.s. Ambient Temperature
4
AP38028EM
MARKING INFORMATION
Part Number
38028E
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
5