DMN4031SSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Product Summary RDS(ON) Max ID Max TA = +25°C (Note 5) 31mΩ @ VGS = 10V 7.0A 50mΩ @ VGS = 4.5V 5.6A V(BR)DSS 40V Features and Benefits Low On-Resistance Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate Datasheet (DMN4031SSDQ) Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it Case: SO-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate) ideal for high efficiency power management applications. Motor Control Backlighting Power Management Functions DC-DC Converters SO-8 S1 D1 G1 D1 S2 D2 G2 D2 Top View Internal Schematic Top View D1 D2 G1 G2 S1 S2 N-Channel MOSFET N-Channel MOSFET Ordering Information (Note 4) Part Number DMN4031SSD-13 Notes: Case SO-8 Packaging 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 8 5 = Manufacturer’s Marking N4031SD = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 16 = 2016) WW = Week (01 - 53) N4031SD YY WW 1 DMN4031SSD Document number: DS35410 Rev. 5 - 2 4 1 of 7 www.diodes.com August 2016 © Diodes Incorporated DMN4031SSD Maximum Ratings (@TA = +25°C, unless otherwise specified.) ADVANCE INFORMATION Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) (VGS = 10V) Steady State Continuous Drain Current (Note 5) (VGS = 4.5V) Steady State Continuous Drain Current (Note 6) (VGS = 10V) Steady State Continuous Drain Current (Note 6) (VGS = 4.5V) Steady State TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C ID Value 40 ±20 5.2 4.1 ID 4.3 3.4 A ID 7.0 5.6 A 5.8 4.7 40 2.2 40 11 18 ID Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Body Diode Forward Current (10μs Pulse, Duty Cycle = 1%) Avalanche Current, L = 0.1mH (Note 7) Avalanche Energy, L = 0.1mH (Note 7) IDM IS ISM IAS EAS Units V V A A A A A A mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6) Operating and Storage Temperature Range Symbol PD RθJA PD RθJA TJ, TSTG Value 1.42 88 2.6 48 -55 to +150 Units W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage On-state drain current Symbol Min Typ Max Unit BVDSS IDSS IGSS 40 — — — — — — 1 ±100 V μA nA VGS = 0V, ID = 10mA VDS = 40V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) ID(ON) RDS(ON) 3.0 — 31 50 — 1.0 mΩ |YFS| VSD 2.4 — 19 44 11 0.74 V A Static Drain-Source On-Resistance 1.6 20 — — — — VDS = VGS, ID = 250μA VGS = 10V, VDS = 5A VGS = 10V, ID = 6A VGS = 4.5V, ID = 5A VDS = 5V, ID = 6A VGS = 0V, IS = 1A CISS COSS CRSS RG QG QG QGS QGD TD(ON) TR TD(OFF) TF — — — — — — — — — — — — 945 69 58 1.45 8.4 18.6 3.3 2.2 6.4 9.7 19.8 3.1 — — — — — — — — — — — — pF pF pF Ω nC nC nC nC ns ns ns ns Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: S V Test Condition VDS = 20V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz VGS = 10V, VDS = 20V, ID = 12A VGS = 10V, VDS = 20V, RL= 1.6Ω, RG= 3Ω 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. The value in any given application depends on user’s specific board design 6. Device mounted on 1” x 1” FR-4PCB with high coverage 1 oz. copper, single sided. 7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMN4031SSD Document number: DS35410 Rev. 5 - 2 2 of 7 www.diodes.com August 2016 © Diodes Incorporated 30 25 25 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 30 VGS = 10V 20 15 VGS = 4.5V 10 20 15 10 TA = 150C 5 VGS = 3.5V 0 0.5 1.0 1.5 VDS, DRAIN -SOURCE VOLTAGE(V) Fig. 1 Typical Output Characteristics TA = -55C 0 2.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE() 0.10 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 0 5 10 15 20 25 ID, DRAIN SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 30 1.4 1.2 1.0 0.8 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 5 On-Resistance Variation with Temperature DMN4031SSD Document number: DS35410 Rev. 5 - 2 1 2 3 4 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 3 of 7 www.diodes.com 5 0.06 VGS = 4.5V 0.05 0.04 TA = 150C TA = 125C 0.03 TA = 85C TA = 25C 0.02 TA = -55 C 0.01 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 1.6 0.6 -50 T A = 85C TA = 25C VGS = 4.0V 0 RDS(ON),DRAIN-SOURCE ON-RESISTANCE() VDS = 5.0V TA = 125C 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Normalized) ADVANCE INFORMATION DMN4031SSD 5 10 15 20 25 ID, DRAIN SOURCE CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 30 0.06 0.05 0.04 0.03 VGS = 10V ID = 10A 0.02 VGS = 10V ID = 5A 0.01 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 6 On-Resistance Variation with Temperature August 2016 © Diodes Incorporated DMN4031SSD 16 IS, SOURCE CURRENT (A) V GS(TH), GATE THRESHOLD VOLTAGE(V) 20 2.5 2.0 1.5 1.0 12 8 4 0.5 0 -50 0 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0 0.2 0.4 0.6 0.8 1.0 V SD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 1,000 10,000 IDSS, LEAKAGE CURRENT (µA) CT, JUNCTION CAPACITANCE (pF) TA = 150°C 1,000 Ciss Coss 100 Crss 100 TA = 125°C 10 TA = 85°C TA = 25°C f = 1MHz 10 0 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Junction Capacitance 1 40 0 10 20 30 VDS, DRAIN-SOURCE VOLTAGE(V) Fig. 10 Typical Drain-Source Leakage Current vs. Voltage 100 10 RDS(on) Limited PW = 100µs f = 1MHz 8 ID, DRAIN CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V) ADVANCE INFORMATION 3.0 6 4 2 0 10 DC PW = 10s 1 PW = 1s PW = 100ms 0.1 T J (m ax ) = 150°C PW = 10ms T C = 25°C 0 2 4 6 8 10 12 14 16 18 20 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate-Charge Characteristics DMN4031SSD Document number: DS35410 Rev. 5 - 2 0.01 0.1 4 of 7 www.diodes.com PW = 1ms V GS = 10V Single Pulse DUT on 1 * MRP Board 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 August 2016 © Diodes Incorporated DMN4031SSD r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA(t) = r(t) * R JA RJA = 97°C/W Duty Cycle, D = t1/ t2 D = Single Pulse 0.001 0.00001 0.0001 DMN4031SSD Document number: DS35410 Rev. 5 - 2 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance 5 of 7 www.diodes.com 100 1000 August 2016 © Diodes Incorporated DMN4031SSD Package Outline Dimensions ADVANCE INFORMATION Please see http://www.diodes.com/package-outlines.html for the latest version. SO-8 E 1 b es) 7° A R .1 0 e Q 45° id All s 9° ( E1 h c 4°±3° A1 E0 L Gauge Plane Seating Plane SO-8 Dim Min Max Typ A 1.40 1.50 1.45 A1 0.10 0.20 0.15 b 0.30 0.50 0.40 c 0.15 0.25 0.20 D 4.85 4.95 4.90 E 5.90 6.10 6.00 E1 3.80 3.90 3.85 E0 3.85 3.95 3.90 e – – 1.27 h – – 0.35 L 0.62 0.82 0.72 Q 0.60 0.70 0.65 All Dimensions in mm D Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SO-8 X1 Dimensions Value (in mm) C 1.27 X 0.802 X1 4.612 Y 1.505 Y1 6.50 Y1 Y C DMN4031SSD Document number: DS35410 Rev. 5 - 2 X 6 of 7 www.diodes.com August 2016 © Diodes Incorporated DMN4031SSD ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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