SSDI F00049E N-channel power mosfet Datasheet

SFF250M
SFF250Z
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
[email protected] * www.ssdi-power.com
DESIGNER’S DATA SHEET
30 AMP / 200 Volts
0.060 Ω typical
N-Channel POWER MOSFET
Part Number / Ordering Information 1/
SFF250
__ __ __
│
│
│
│
│
│
│
│
│
└
│ └ Screening 2/ __ = Not Screen
│
TX = TX Level
│
TXV = TXV Level
│
S = S Level
│
└ Lead Option 3/
__ = Straight Leads
Features:
•
•
•
•
•
•
•
•
•
•
•
DB = Down Bend
UB = Up Bend
Package 3/ M = TO-254
Z = TO-254Z
Rugged Construction with Polysilicon Gate Cell
Low RDS(ON) and High Transconductance
Excellent High Temperature Stability
Very Fast Switching Speed
Fast Recovery and Superior dV/dt Performance
Increased Reverse Energy Capability
Low Input and Transfer Capacitance for Easy Paralleling
Ceramic Seals Available for Improved Hermeticity
Hermetically Sealed Surface Mount Power Package
TX, TXV, Space Level Screening Available
Replacement for IRFM250 Types
Maximum Ratings
Symbol
Value
Units
Drain – Source Voltage
VDS
200
Volts
Gate – Source Voltage
VGS
±20
Volts
ID
30
Amps
Top & Tstg
-55 to +150
ºC
RθJC
1
ºC/W
PD
125
95
W
Continuous Collector Current
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to Case
Total Device Dissipation
TC = 25ºC
TC = 55ºC
TO-254 (M)
TO-254Z (Z)
For Pin Out Configuration and Optional Lead Bend, See Page 3.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00049E
DOC
SFF250M
SFF250Z
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
[email protected] * www.ssdi-power.com
Electrical Characteristics @ T J = 25ºC
(Unless Otherwise Specified)
Symbol
Min
Typ
Max
Units
BVDSS
200
––
––
V
RDS(on)
––
0.06
0.085
Ω
VGS(th)
2
3
5
V
gfs
10
17
––
mho
IDSS
––
––
––
––
25
250
μA
At rated VGS
IGSS
––
––
––
––
+100
-100
nA
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
VGS=10 V
VDS= 100 V
ID= 30 A
Qg
Qgs
Qgd
––
––
––
70
18
35
120
25
65
nC
Turn on Delay Time
Rise Time
Turn on Delay Time
Fall Time
Diode Forward Voltage
(IS= 30 A, VGS= 0 V, TJ= 25ºC)
VDD= 100 V
ID= 15 A
RG= 6.2Ω
td(on)
tr
td(off)
tf
––
––
––
––
29
35
75
35
30
180
100
120
nsec
VSD
––
––
1.1
1.5
V
trr
QRR
––
––
150
2.0
630
8
nsec
μC
Ciss
Coss
Crss
––
––
––
4200
650
120
––
––
––
pF
Drain to Source Breakdown Voltage
(VGS= 0 V, ID= 250μA
Drain to Source On State Resistance
(VGS= 10 V, ID= 18 A
Gate Threshold Voltage
(VDS= VGS, ID= 250μA
Forward Transconductance
(VDS≥ IN(on) X RDS(on) Max, ID= 18 A
Zero Gate Voltage Drain Current
(VDS= 200 V, VGS= 0 V)
(VDS= 200 V, VGS= 0 V, TA= 125ºC)
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
Diode Reverse Recovery Time
Reverse Recovery Charge
Input Capacitance
Input Capacitance
Reverse Transfer Capacitance
TJ= 25ºC
IF= 10 A
di/dt= 100 A/μsec
VGS= 0 Volts
VDS= 25 Volts
f= 1 MHz
For thermal derating curves and other characteristics please contact SSDI Marketing Department.
Available Part Numbers:
SFF250M; SFF250MDB; SFF250MUB;
SFF250Z; SFF250ZDB; SFF250ZUB;
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
PIN ASSIGNMENT (Standard)
Package
TO-254 (M)
TO-254Z (Z)
Drain
Pin 1
Pin 1
DATA SHEET #: F00049E
Source
Pin 2
Pin 2
Gate
Pin 3
Pin 3
DOC
SFF250M
SFF250Z
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
[email protected] * www.ssdi-power.com
Case Outline: TO-254 (M)
.150
Ø.139
.685
.665
.750
.500
2x .155
.145
PIN 3
.545
.535
PIN 2
PIN 1
3x Ø.045
.035
.545
.535
.270
.240
.050
.040
.155
.140
.800
.790
SUFFIX: MDB
SUFFIX: MUB
Case Outline: TO-254Z (Z)
PIN 3
PIN 2
PIN 1
SUFFIX: ZDB
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
SUFFIX: ZUB
DATA SHEET #: F00049E
DOC
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