600V 46A 0.083Ω
APT47N60BCF
APT47N60SCF
APT47N60BCFG* APT47N60SCFG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Super Junction FREDFET
COOLMOS
(B)
TO
Power Semiconductors
-2
47
D3PAK
• Ultra Low RDS(ON)
• Intrinsic Fast-Recovery Body Diode
• Low Miller Capacitance
• Extreme Low Reverse Recovery Charge
• Ultra Low Gate Charge, Qg
• Ideal For ZVS Applications
• Avalanche Energy Rated
• Popular TO-247 or Surface Mount D3 Package
(S)
D
• Extreme dv/dt Rated
G
S
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT47N60B_SCF(G)
UNIT
Drain-Source Voltage
600
Volts
Continuous Drain Current @ TC = 25°C
46
Continuous Drain Current @ TC = 100°C
29
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Volts
Total Power Dissipation @ TC = 25°C
417
Watts
Linear Derating Factor
1.67
W/°C
PD
TJ,TSTG
TL
dv/
dt
IAR
115
Operating and Storage Junction Temperature Range
-55 to 150
°C
Lead Temperature: 0.063" from Case for 10 Sec.
260
Drain-Source Voltage slope (VDS = 480V, ID = 46A, TJ = 125°C)
80
V/ns
20
Amps
Avalanche Current
2
2
EAR
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
1
3
mJ
1800
STATIC ELECTRICAL CHARACTERISTICS
B(VR)DS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source On-State Resistance
MIN
4
TYP
MAX
UNIT
Volts
600
(VGS = 10V, ID = 29A)
0.083
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
6
Ohms
µA
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150°C)
5000
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
±100
nA
5
Volts
Gate Threshold Voltage (VDS = VGS, ID = 2.9mA)
3
4
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG."
12-2005
Characteristic / Test Conditions
050-7237 Rev A
Symbol
APT47N60BCF_SCF(G)
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Test Conditions
Ciss
Input Capacitance
Coss
VGS = 0V
Output Capacitance
VDS = 25V
Crss
Reverse Transfer Capacitance
f = 1 MHz
Qg
5
VGS = 10V
Gate-Source Charge
VDD = 300V
Total Gate Charge
Qgs
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
tr
VGS = 15V
ID = 46A @ 25°C
RG = 3.6Ω
15
6
INDUCTIVE SWITCHING @ 25°C
VDD = 400V, VGS = 15V
Eon
Turn-on Switching Energy
885
Eoff
Turn-off Switching Energy
ID = 46A, RG = 4.3Ω
590
6
INDUCTIVE SWITCHING @ 125°C
VDD = 400V, VGS = 15V
Eon
Turn-on Switching Energy
1270
Eoff
Turn-off Switching Energy
ID = 46A, RG = 4.3Ω
725
UNIT
pF
41
255
43
135
30
30
100
VDD = 380V
Fall Time
MAX
7290
1735
RESISTIVE SWITCHING
Turn-off Delay Time
tf
TYP
ID = 46A @ 25°C
Rise Time
td(off)
MIN
nC
ns
µJ
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
MIN
TYP
Pulsed Source Current
VSD
1
Diode Forward Voltage
Peak Diode Recovery
/dt
dv
115
(Body Diode)
4
/dt
(VGS = 0V, IS = -46A)
7
Reverse Recovery Time
t rr
Q rr
(IS = -46A, di/dt = 100A/µs)
Tj = 25°C
210
Tj = 125°C
350
Reverse Recovery Charge
Tj = 25°C
2.0
(IS = -46A, /dt = 100A/µs)
Tj = 125°C
5.4
Peak Recovery Current
Tj = 25°C
18
28
di
IRRM
MAX
46
Continuous Source Current (Body Diode)
ISM
dv
Characteristic / Test Conditions
di
(IS = -46A, /dt = 100A/µs)
Tj = 125°C
UNIT
Amps
1.2
Volts
40
V/ns
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
RθJC
Junction to Case
RθJA
Junction to Ambient
MIN
TYP
MAX
0.30
62
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Repetitive avalanche causes additional power losses that can
be calculated as PAV = EAR*f
3 Starting Tj = +25°C, L = 36.0mH, RG = 25Ω, Peak IL = 10A
4
5
6
7
Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
See MIL-STD-750 Method 3471
Eon includes diode reverse recovery. See figures 18, 20.
Maximum 125°C diode commutation speed = di/dt 600A/µs
0.30
D = 0.9
0.25
0.7
0.20
0.5
0.15
0.10
Note:
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7237 Rev A
12-2005
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.35
0.3
t1
t2
0.05
0
t
0.1
0.05
10-5
SINGLE PULSE
10-4
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
UNIT
°C/W
Typical Performance Curves
Junction
temp. (°C)
0.00841
Power
(watts)
0.157
0.133
ID, DRAIN CURRENT (AMPERES)
RC MODEL
0.143
40
20
50
TJ = -55°C
TJ = +25°C
TJ = +125°C
10
0
0 1 2
3 4
5 6
7 8
9 10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
50
40
35
30
25
20
15
10
5
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
1.40
NORMALIZED TO
VGS = 10V @ 23A
1.30
1.20
VGS=10V
1.10
VGS=20V
1.00
0.90
0.80
1.15
0
20
40
60
80
100
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
-50
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.15
I = 23A
D
V
GS
= 10V
2.0
1.5
1.0
0.5
0
-50
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
12-2005
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
5V
050-7237 Rev A
ID, DRAIN CURRENT (AMPERES)
45
2.5
5.5V
0
2
4
6
8
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
60
20
6V
10
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
30
6.5V
30
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
VDS> ID(ON) x RDS(ON) MAX.
40
7V
0
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
70
15, 10 & 7.5V
50
Case temperature. (°C)
80
APT47N60BCF_SCF(G)
60
10
5
1
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
1
10
100
600
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
10mS
I = 46A
D
14
12
VDS=120V
10
VDS=300V
8
6
VDS=480V
4
2
0
50 100 150 200 250 300 350 400
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
300
101
0
100
200
300
400
500
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
100
TJ =+150°C
TJ =+25°C
10
80
V
DD
R
60
= 400V
= 4.3Ω
G
T = 125°C
J
L = 100µH
150
100
tf
50
V
DD
= 400V
40
R
30
T = 125°C
J
L = 100µH
G
= 4.3Ω
tr
20
td(on)
0
10
20
30
10
40 50
ID (A)
60
70
0
80
FIGURE 14, DELAY TIMES vs CURRENT
DD
G
= 400V
30
40 50
ID (A)
includes
diode reverse recovery.
1500
Eon
1000
Eoff
500
2500
10
80
2000
1500
V
DD
1000
20
30
40 50 60 70 80
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
= 400V
I = 46A
D
T = 125°C
J
500
0
70
Eon
L = 100µH
E
on
0
60
Eoff
J
on
20
3000
L = 100µH
E
10
FIGURE 15, RISE AND FALL TIMES vs CURRENT
= 4.3Ω
T = 125°C
2000
0
3500
SWITCHING ENERGY (mJ)
V
R
SWITCHING ENERGY (mJ)
200
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
90
tr and tf (ns)
td(on) and td(off) (ns)
200
2500
12-2005
102
70
50
050-7237 Rev A
Coss
Crss
td(off)
250
103
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
16
C, CAPACITANCE (pF)
100µS
0
Ciss
104
50
0
APT47N60BCF_SCF(G)
404
OPERATION HERE
LIMITED BY R
(ON)
DS
IDR, REVERSE DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
115
0
includes
diode reverse recovery.
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT47N60BCF_SCF(G)
90%
Gate Voltage
10%
Gate Voltage
TJ125°C
td(off)
td(on)
tr
tf
Drain Current
90%
TJ125°C
Drain Voltage
90%
5%
5%
10%
0
Drain Voltage
10%
Drain Current
Switching Energy
Switching Energy
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT30DQ60
VDD
ID
VDS
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
3
D PAK Package Outline
TO-247 Package Outline
e3 100% Sn
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Drain
(Heat Sink)
e1 SAC: Tin, Silver, Copper
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05(.632)
Revised
4/18/95
Drain
20.80 (.819)
21.46 (.845)
1.04 (.041)
1.15(.045)
13.41 (.528)
13.51(.532)
13.79 (.543)
13.99(.551)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
19.81 (.780)
20.32 (.800)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
Gate
Drain
Source
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated
050-7237 Rev A
0.46 (.018)
0.56 (.022) {3 Plcs}
12-2005
3.50 (.138)
3.81 (.150)