Dynex DIM200WKS17-A000 Igbt chopper module - upper arm control Datasheet

DIM200WKS17-A000
DIM200WKS17-A000
IGBT Chopper Module - Upper Arm Control
FDS5699-1.1 December 2003
FEATURES
■
10µs Short Circuit Withstand
■
Non Punch Through Silicon
■
Isolated Copper Baseplate
KEY PARAMETERS
VCES
(typ)
VCE(sat) *
(max)
IC
(max)
IC(PK)
1700V
2.7V
200A
400A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
■
Choppers
■
Motor Controllers
■
Induction Heating
■
Resonant Converters
■
Power Supplies
1(K,E)
2(A)
3(C1)
4(G1)
5(E1)
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 3600A.
The DIM200WKS17-A000 is a 1700V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
chopper module configured with the upper arm of the bridge
controlled. The IGBT has a wide reverse bias safe operating
area (RBSOA) plus full 10µs short circuit withstand.
Fig. 1 Chopper circuit diagram
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM200WKS17-A000
Note: When ordering, please use the whole part number.
Outline type code: W
(See package details for further information)
Fig. 2 Module outline
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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1/8
DIM200WKS17-A000
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise
Symbol
Test Conditions
Parameter
VCES
Collector-emitter voltage
VGES
Gate-emitter voltage
VGE = 0V
-
Max.
Units
1700
V
±20
V
Continuous collector current
Tcase = 65˚C
200
A
IC(PK)
Peak collector current
1ms, Tcase = 110˚C
400
A
Pmax
Max. transistor power dissipation
Tcase = 25˚C, Tj = 150˚C
1390
W
Diode I2t value
VR = 0, tp = 10ms, Tvj = 125˚C
7.5
kA2s
Visol
Isolation voltage - per module
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
4000
V
QPD
Partial discharge - per module
IEC1287. V1 = 1800V, V2 = 1300V, 50Hz RMS
10
PC
IC
I2t
THERMAL AND MECHANICAL RATINGS
Internal insulation: Al2O3
Baseplate material: Cu
Creepage distance: 24mm
Test Conditions
Parameter
Symbol
Rth(j-c)
Clearance: 13mm
CTI (Critical Tracking Index): 175
Thermal resistance - transistor (per arm)
Continuous dissipation -
Min.
Typ.
Max.
Units
-
-
90
˚C/kW
-
-
200
˚C/kW
-
-
15
˚C/kW
junction to case
Rth(j-c)
Rth(c-h)
Tj
Tstg
-
Thermal resistance - diode (per arm)
Continuous dissipation -
(Antiparallel and freewheel diode)
junction to case
Thermal resistance - case to heatsink
Mounting torque 5Nm
(per module)
(with mounting grease)
Junction temperature
Transistor
-
-
150
˚C
Diode
-
-
125
˚C
–40
-
125
˚C
3
-
5
Nm
2.5
-
5
Nm
-
Storage temperature range
Screw torque
Mounting - M6
Electrical connections - M6
2/8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM200WKS17-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise.
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector cut-off current
VGE = 0V, VCE = VCES
-
-
1
mA
(IGBT and Diode arm)
VGE = 0V, VCE = VCES, Tcase = 125˚C
-
-
6
mA
Gate leakage current
VGE = ±20V, VCE = 0V
-
-
2
µA
VGE(TH)
Gate threshold voltage
IC = 10mA, VGE = VCE
4.5
5.5
6.5
V
VCE(sat)†
Collector-emitter saturation voltage
VGE = 15V, IC = 200A
-
2.7
3.4
V
VGE = 15V, IC = 200A, , Tcase = 125˚C
-
3.4
4.0
V
ICES
IGES
IF
Diode forward current
DC
-
-
200
A
IFM
Diode maximum forward current
tp = 1ms
-
-
400
A
VF†
Diode forward voltage
IF = 200A
-
2.2
2.5
V
(IGBT and Diode arm)
IF = 200A, Tcase = 125˚C
-
2.3
2.6
V
Cies
Input capacitance
VCE = 25V, VGE = 0V, f = 1MHz
-
15
-
nF
LM
Module inductance - per arm
-
-
20
-
nH
RINT
Internal transistor resistance
-
-
0.23
-
mΩ
SCData
Short circuit. ISC
Tj = 125˚C, VCC = 1000V,
I1
-
900
-
A
tp ≤ 10µs, VCE(max) = VCES – L*. di/dt
I2
-
800
-
A
IEC 60747-9
Note:
†
Measured at the power busbars and not the auxiliary terminals.
* L is the circuit inductance + LM
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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3/8
DIM200WKS17-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise
Min.
Typ.
Max.
Units
IC = 200A
-
590
-
ns
Fall time
VGE = ±15V
-
300
-
ns
EOFF
Turn-off energy loss
VCE = 900V
-
40
-
mJ
td(on)
Turn-on delay time
RG(ON) = RG(OFF) = 4.7Ω
-
320
-
ns
L ~ 100nH
-
90
-
ns
Parameter
Symbol
td(off)
tf
tr
Turn-off delay time
Rise time
Test Conditions
EON
Turn-on energy loss
-
50
-
mJ
Qg
Gate charge
-
2
-
µC
Qrr
Diode reverse recovery charge
IF = 200A, VR = 900V,
-
65
-
µC
Irr
Diode reverse current
dIF/dt = 3000A/µs
-
195
-
A
-
42
-
mJ
Min.
Typ.
Max.
Units
IC = 200A
-
880
-
ns
Fall time
VGE = ±15V
-
410
-
ns
EOFF
Turn-off energy loss
VCE = 900V
-
60
-
mJ
td(on)
Turn-on delay time
RG(ON) = RG(OFF) = 4.7Ω
-
450
-
ns
L ~ 100nH
-
110
-
ns
-
85
-
mJ
IF = 200A, VR = 900V,
-
100
-
µC
dIF/dt = 2500A/µs
-
195
-
A
-
64
-
mJ
EREC
Diode reverse recovery energy
Tcase = 125˚C unless stated otherwise
Parameter
Symbol
td(off)
tf
tr
Turn-off delay time
Rise time
EON
Turn-on energy loss
Qrr
Diode reverse recovery charge
Irr
Diode reverse current
EREC
4/8
Diode reverse recovery energy
Test Conditions
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM200WKS17-A000
TYPICAL CHARACTERISTICS
400
400
Common emitter.
Tcase = 25˚C
Common emitter.
Tcase = 125˚C
350 Vce is measured at power busbars
350 Vce is measured at power busbars
and not the auxiliary terminals
and not the auxiliary terminals
300
Collector current, IC - (A)
Collector current, IC - (A)
300
250
200
150
100
200
150
100
VGE = 20V
15V
12V
10V
50
0
0
250
0.5
1
1.5
2
2.5
3
3.5
4
VGE = 20V
15V
12V
10V
50
4.5
0
0
5
0.5
1
Collector-emitter voltage, Vce - (V)
Fig. 3 Typical output characteristics
1.5 2 2.5 3 3.5 4 4.5 5
Collector-emitter voltage, Vce - (V)
5.5
6
Fig. 4 Typical output characteristics
80
120
Conditions:
Tc = 125˚C,
70 Rg = 4.7 ,
Vcc = 900V
Conditions:
Tc = 125˚C,
IC = 200A,
100 Vcc = 900V
Switching energy, Esw - (mJ)
Switching energy, Esw - (mJ)
60
50
40
30
20
Eon
Eoff
Erec
10
0
0
20
40
60
80 100 120 140 160 180 200
Collector current, IC - (A)
Fig. 5 Typical switching energy vs collector current
80
60
40
20
0
4
Eon
Eoff
Erec
5
6
7
8
Gate resistance, Rg - (Ohms)
10
Fig. 6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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9
5/8
DIM200WKS17-A000
450
400
VF is measured at power busbars
and not the auxiliary terminals
400
350
Tj = 25˚C
Chip
350
Collector current, IC - (A)
Foward current, IF - (A)
300
300
250
Tj = 125˚C
Module
250
200
200
150
150
100
100
50
50
0
0
0.5
2.0
1.0
1.5
2.5
Foward voltage, VF - (V)
3.0
Conditions:
Tcase = 125˚C
Vge = 15V
Rg(off) = 4.7ohms
0
0
3.5
200
400
600
800 1000 1200 1400 1600 1800
Collector emitter voltage, Vce - (V)
Fig. 7 Diode typical forward characteristics
Fig. 8 Reverse bias safe operating area
1000
Transient thermal impedance, Zth (j-c) - (°C/kW )
400
Reverse recovery current, Irr - (A)
350
300
250
200
150
100
50
Diode
10
IGBT
Tj = 125˚C
0
0
400
Diode
1200
800
Reverse voltage, VR - (V)
1600
Fig. 9 Diode reverse bias safe operating area
6/8
Transistor
100
2000
1
0.001
Ri (˚C/KW)
τi (ms)
Ri (˚C/KW)
τi (ms)
0.01
1
2.10
0.11
4.49
0.01
2
11.62
3.14
25.28
3.21
0.1
Pulse width, tp - (s)
3
43.85
45.60
74.24
38.58
1
4
29.53
143.02
90.09
113.97
10
Fig. 10 Transient thermal impedance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM200WKS17-A000
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
1(K,E)
2(A)
3(C1)
4(G1)
5(E1)
Nominal weight: 420g
Module outline type code: W
Fig. 11 Package details
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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7/8
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: +44-(0)1522-500500
Fax: +44-(0)1522-500550
CUSTOMER SERVICE
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
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Fax: +44 (0)1522 500020
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These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN
UNITED KINGDOM
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded
as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company
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