AOD454 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD454 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOD454 is Pb-free (meets ROHS & Sony 259 specifications). AOD454L is a Green Product ordering option. AOD454 and AOD454L are electrically identical. VDS (V) = 40V ID = 12 A (VGS = 10V) RDS(ON) < 33 mΩ (VGS = 10V) RDS(ON) < 47 mΩ (VGS = 4.5V) TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current G C C Repetitive avalanche energy L=0.1mH C TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C V A 12 IAR 12 A EAR 20 mJ 30 20 2 W 1.3 TJ, TSTG °C -55 to 175 Symbol t ≤ 10s Steady-State Steady-State W 10 PDSM Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±20 ID IDM PD TA=25°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B Units V 12 TC=100°C Pulsed Drain Current Avalanche Current Maximum 40 RθJA RθJC Typ 17.4 50 4 Max 30 60 7.5 Units °C/W °C/W °C/W AOD454 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions ID=10mA, VGS=0V VDS=32V, VGS=0V IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current RDS(ON) Static Drain-Source On-Resistance gFS VSD IS VGS=4.5V, ID=6A Forward Transconductance VDS=5V, ID=12A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge Min Typ Units 40 V TJ=55°C VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, VDS=5V VGS=10V, ID=12A 1 30 TJ=125°C VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=20V, ID=12A VGS=10V, VDS=20V, RL=1.7Ω, RGEN=3Ω IF=12A, dI/dt=100A/µs IF=12A, dI/dt=100A/µs Max 2.3 1 5 ±100 3 25 39 34 25 0.76 33 52 47 404 95 37 2.7 500 150 60 µA nA V A mΩ mΩ S V A 1 12 pF pF pF Ω 9.2 4.5 1.6 2.6 3.5 6 13.2 3.5 nC nC nC nC ns ns ns ns 22.9 18.3 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev 3: Jan. 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOD454 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 30 10V 5V 25 VDS=5V 4.5V 15 4V ID(A) ID (A) 20 15 10 125°C 10 5 VGS=3.5V 5 25°C 0 0 0 1 2 3 4 2 5 2.5 50 3.5 4 4.5 1.8 40 Normalized On-Resistance 45 RDS(ON) (mΩ) 3 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics VGS=4.5V 35 30 VGS=10V 25 VGS=10V ID=12A 1.6 1.4 VGS=4.5V ID=6A 1.2 1 20 0 4 8 12 16 20 0.8 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 100 1.0E+01 ID=12A 90 1.0E+00 80 70 125°C 1.0E-01 125°C 60 IS (A) RDS(ON) (mΩ) 25 50 1.0E-02 25°C 1.0E-03 40 30 1.0E-04 25°C 20 1.0E-05 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AOD454 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 700 10 Capacitance (pF) VGS (Volts) 600 VDS=20V ID=12A 8 6 4 Ciss 500 400 300 Coss 200 Crss 2 100 0 0 2 4 6 8 0 10 0 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 10µs 15 20 25 30 35 VDS (Volts) Figure 8: Capacitance Characteristics 160 ID (Amps) 1ms 10ms 1.0 40 TJ(Max)=175°C TA=25°C 100µs Power (W) 10.0 10 200 TJ(Max)=175°C, TA=25°C RDS(ON) limited 5 120 80 DC 40 0 0.1 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=7.5°C/W 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 10 100 AOD454 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 tA = 12 10 L ⋅ ID BV − VDD Power Dissipation (W) ID(A), Peak Avalanche Current 14 8 6 4 TA=25°C 2 0 20 15 10 5 0 0.00001 0.0001 0.001 0 25 Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 50 75 100 14 150 175 50 TA=25°C 12 40 10 Power (W) Current rating ID(A) 125 TCASE (°C) Figure 13: Power De-rating (Note B) 8 6 30 20 4 10 2 0 0 0 25 50 75 100 125 150 0.001 175 ZθJA Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) TCASE (°C) Figure 14: Current De-rating (Note B) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 PD Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. 100 1000