JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors JC(T BCX19 SOT-23 TRANSISTOR (NPN) 1. BASE FEATURES Low voltage z 2. EMITTER 3. COLLECTOR MARKING : U1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current 500 mA PC Collector Power Dissipation 225 mW Thermal Resistance From Junction To Ambient 556 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-emitter breakdown voltage V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 Collector cut-off current ICBO = VCB=20V , IE 0 Collector cut-off current IEBO IC=100μA, IE=0 = IC=10mA, IB 0 Min Typ Max Unit 50 V 45 V 5 V = VEB=5V , IC 0 0.1 μA 10 μA hFE1 VCE= 1V, = IC 100mA 100 hFE2 VCE= = 1V, IC 300mA 70 hFE3 VCE= = 1V, IC 500mA 40 Collector-emitter saturation voltage VCE(sat) Ic=500mA, IB= 50mA 0.62 V Base-emitter voltage VBE(on) Ic=500mA, VCE= 1V 1.2 V DC current gain www.cj-elec.com 1 600 B,Oct,2014 A,Jun,2014 Typical Characteristics IC 150 —— VCE hFE 100 IC Ta=100℃ 400uA 350uA DC CURRENT GAIN (mA) IC COLLECTOR CURRENT 450uA —— COMMON EMITTER VCE=1V COMMON EMITTER Ta=25℃ 500uA 125 hFE 1000 300uA 75 250uA 200uA 50 150uA Ta=25℃ 100 100uA 25 IB= 50uA 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE VCEsat COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 500 5 10 10 6 VBEsat —— IC —— 100 500 COLLECTOR CURRENT VCE (V) 100 Ta=100 ℃ Ta=25℃ IC (mA) IC 2000 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 0 1000 Ta=25℃ Ta=100 ℃ β=10 10 10 IC —— IC 1 (mA) VBE fT 500 500 100 COLLECTOR CURRENT —— IC (mA) IC fT 100 TRANSITION FREQUENCY 10 T =2 5℃ a T =1 00℃ a IC COLLECTOR CURRENT 10 (MHz) 500 500 100 COLLECTOR CURRENT (mA) β=10 100 1 1 COMMON EMITTER VCE=1V 300 600 900 COMMON EMITTER VCE=1V Ta=25℃ 0.1 0 100 10 1200 1 10 BASE-EMMITER VOLTAGE VBE (mV) 100 Cob/Cib —— 100 COLLECTOR CURRENT VCB/VEB PC 250 —— IC (mA) Ta f=1MHz IE=0/IC=0 COLLECTOR POWER DISSIPATION PC (mW) Ta=25 ℃ CAPACITANCE CT (pF) Cib 10 Cob 1 0.1 150 100 50 0 1 REVERSE VOLTAGE www.cj-elec.com 200 10 V 0 20 25 50 75 100 AMBIENT TEMPERATURE (V) 2 125 Ta 150 (℃ ) B,Oct,2014 A,Jun,2014 SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout www.cj-elec.com 3 B,Oct,2014 A,Jun,2014 SOT-23 Tape and Reel www.cj-elec.com 4 B,Oct,2014 A,Jun,2014