MOSFET SMD Type P-Channel MOSFET AO3415AS-HF (KO3415AS-HF) SOT-23-3 Unit: mm ■ Features 0.4 +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 ● RDS(ON) ＜ 45mΩ (VGS =-4.5V) 1 0.55 ● ID =-4A (VGS =-4.5V) +0.2 1.6 -0.1 +0.2 2.8 -0.1 ● VDS (V) =-20V 2 +0.02 0.15 -0.02 +0.1 0.95 -0.1 +0.1 1.9 -0.2 ● RDS(ON) ＜ 54mΩ (VGS =-2.5V) +0.2 -0.1 ● RDS(ON) ＜ 75mΩ (VGS =-1.8V) 1.1 ● ESD Rating: 3000V HBM 0-0.1 Pb−Free Lead Finish D +0.1 0.68 -0.1 1. Gate ● Pb−Free Package May be Available. The G−Suffix Denotes a 2. Source 3. Drain G ■ Absolute Maximum Ratings Ta = 25℃ Parameter S Symbol Rating Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Continuous Drain Current Ta = 25℃ Ta = 70℃ Pulsed Drain Current Power Dissipation (Note.1) IDM Ta = 25℃ Ta = 70℃ Thermal Resistance.Junction- to-Ambient t≤ 10s Steady-State Thermal Resistance.Junction- to-Lead ID PD RthJA RthJL Unit V -4 -3.5 A -30 1.5 1 W 80 100 ℃/W 52 Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150 ℃ Note.1: The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. www.kexin.com.cn 1 MOSFET SMD Type P-Channel MOSFET AO3415AS-HF (KO3415AS-HF) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current Gate Threshold Voltage IGSS VGS(th) Test Conditions Min Typ VDS=-20V, VGS=0V -1 VDS=-20V, VGS=0V, TJ=55℃ -5 VDS=0V, VGS=±8V -0.3 VDS=VGS ID=-250μA VGS=-4.5V, ID=-4A RDS(On) On state drain current gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg VGS=-1.8V, ID=-2A 75 VGS=-4.5V, VDS=-5V VDS=-5V, ID=-4A -30 A 20 160 VGS=0V, VDS=0V, f=1MHz 6.5 Turn-On DelayTime td(on) 9.5 Turn-On Rise Time tr Turn-Off DelayTime td(off) Maximum Body-Diode Continuous Current ■ Marking Marking AF** F www.kexin.com.cn VGS=-4.5V, VDS=-10V, ID=-4A VGS=-4.5V, VDS=-10V, RL=2.5Ω, RGEN=3Ω nC 1.3 17 ns 94 35 IF=-4A, dI/dt=100A/μs 31 13.8 IS VSD Ω 17.2 4.5 Qrr pF 205 Qgd Body Diode Reverse Recovery Charge S 1450 VGS=0V, VDS=-10V, f=1MHz Gate Drain Charge tf mΩ 76 Qg trr V 54 Qgs Body Diode Reverse Recovery Time uA -0.9 62 TJ=125℃ Total Gate Charge Turn-Off Fall Time ±10 VGS=-2.5V, ID=-4A Gate Source Charge Diode Forward Voltage 2 ID(ON) μA 45 VGS=-1.5V, ID=-1A Forward Transconductance Unit V VGS=-4.5V, ID=-4A Static Drain-Source On-Resistance Max -20 ID=-250μA, VGS=0V IS=-1A,VGS=0V -0.78 nC -2.2 A -1 V MOSFET SMD Type P-Channel MOSFET AO3415AS-HF (KO3415AS-HF) ■ Typical Characterisitics 40 -8V 35 15 -4.5V 30 12 -2.5V 25 9 -ID(A) -ID (A) VDS=-5V -3.0V 20 -2.0V 15 10 3 5 125°C 0 0 1 2 3 4 -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 0 5 100 0.5 1 1.5 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) Normalized On-Resistance 1.60 VGS=-1.5V 80 60 VGS=-1.8V 40 VGS=-2.5V VGS=-4.5V 2 ID=-4A, VGS=-4.5V 1.40 ID=-4A, VGS=-2.5V 1.20 ID=-2A, VGS=-1.8V 1.00 0.80 20 0 2 4 6 8 0 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 1.0E+01 120 ID=-4A 1.0E+00 100 1.0E-01 80 -IS (A) RDS(ON) (mΩ Ω) 25°C VGS=-1.5V 0 RDS(ON) (mΩ Ω) 6 60 125°C 40 125°C 25°C 1.0E-02 1.0E-03 1.0E-04 25°C 20 0 2 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.kexin.com.cn 3 MOSFET SMD Type P-Channel MOSFET AO3415AS-HF (KO3415AS-HF) ■ Typical Characterisitics 1400 5 VDS=-10V ID=-4A 1200 Capacitance (pF) 4 -VGS (Volts) 3 2 1000 600 400 1 Coss 200 Crss 0 0 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics 0 12 5 10 15 -VDS (Volts) Figure 8: Capacitance Characteristics 20 1000 100.0 TJ(Max)=150°C TA=25°C RDS(ON) limited 100µs 1ms 1.0 10ms DC 0.1 Power (W) 10µs 10.0 -ID (Amps) Ciss 800 100ms 1 0.0 0.1 10 10s TJ(Max)=150°C TA=25°C 0.01 100 1 10 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.00001 100 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) . Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=100°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4 www.kexin.com.cn 100 1000