Diodes SMD Type Silicon Switching Diode BAR74 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 For high-speed switching applications +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 3.collector Absolute M axim um Ratings Ta = 25 Param eter Reverse voltage Peak reverse volatge Forward current Surege forward current, T = 1 s Total power dissipation, Ts = 54 Junction tem perature Sym bol Value Unit VR 50 V V RM 50 V IF 250 mA I FS 4.5 A P tot 370 mW Tj 150 Storage tem perature range T stg -65 to +150 Junction am bient (Note 1) R th JA 330 K/W Junction soldering point R th JS 260 K/W Note 1. Package m ounted on epoxy pcb 40 m m 40 m m 1.5 m m /6 cm 2 Cu. Electrical Characteristics Ta = 25 Conditions Min Breakdown voltage Parameter Symbol VR IR =100 50 Forward voltage VF IF = 100 mA Reverse current IR A VR = 50 V VR = 50 V,Ta = 150 Diode capacitance CD Reverse recovery time trr VR = 0 V,f = 1 MHz IF = IR = 10 mA,RL = 100 ,measured at IR = 1 mA Typ Max Unit V 1 0.1 100 V A 2 pF 4 ns Marking Marking JBs www.kexin.com.cn 1