Kexin BAR74 Silicon switching diode Datasheet

Diodes
SMD Type
Silicon Switching Diode
BAR74
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
1
0.55
For high-speed switching applications
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
1.Base
2.Emitter
+0.1
0.38-0.1
0-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
3.collector
Absolute M axim um Ratings Ta = 25
Param eter
Reverse voltage
Peak reverse volatge
Forward current
Surege forward current, T = 1
s
Total power dissipation, Ts = 54
Junction tem perature
Sym bol
Value
Unit
VR
50
V
V RM
50
V
IF
250
mA
I FS
4.5
A
P tot
370
mW
Tj
150
Storage tem perature range
T stg
-65 to +150
Junction am bient (Note 1)
R th JA
330
K/W
Junction soldering point
R th JS
260
K/W
Note
1. Package m ounted on epoxy pcb 40 m m
40 m m
1.5 m m /6 cm 2 Cu.
Electrical Characteristics Ta = 25
Conditions
Min
Breakdown voltage
Parameter
Symbol
VR
IR =100
50
Forward voltage
VF
IF = 100 mA
Reverse current
IR
A
VR = 50 V
VR = 50 V,Ta = 150
Diode capacitance
CD
Reverse recovery time
trr
VR = 0 V,f = 1 MHz
IF = IR = 10 mA,RL = 100
,measured at IR = 1 mA
Typ
Max
Unit
V
1
0.1
100
V
A
2
pF
4
ns
Marking
Marking
JBs
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