SO T2 23 BT168GWF SCR 11 July 2014 Product data sheet 1. General description Planar passivated SCR with faster switching performance and sensitive gate in a SOT223 surface mounted plastic package. This SCR with enhanced commutation performance is also designed to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. 2. Features and benefits • Fast commutation performance for higher frequency operation • Full wave rectified AC applications • Sensitive gate • Direct triggering from microcontrollers, low power drivers and logic ICs 3. Applications • • Earth leakage circuit breakers (ELCB/GFI) Ignition circuits (gas appliances, small engines and HID lighting) 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDRM Conditions Min Typ Max Unit repetitive peak offstate voltage - - 600 V VRRM repetitive peak reverse voltage - - 600 V ITSM non-repetitive peak on- half sine wave; Tj(init) = 25 °C; state current tp = 10 ms; Fig. 4; Fig. 5 - - 8 A IT(AV) average on-state current half sine wave; Tsp ≤ 112 °C; Fig. 1 - - 0.63 A IT(RMS) RMS on-state current half sine wave; Tsp ≤ 112 °C; Fig. 2; - - 1 A 70 200 450 µA Fig. 3 Static characteristics IGT gate trigger current VD = 12 V; IT = 10 mA; Tj = 25 °C; Fig. 9 Scan or click this QR code to view the latest information for this product BT168GWF NXP Semiconductors SCR 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K Simplified outline Graphic symbol 4 A cathode K G 2 A anode 3 G gate 4 mb mb; connected to anode sym037 1 2 3 SC-73 (SOT223) 6. Ordering information Table 3. Ordering information Type number BT168GWF BT168GWF Product data sheet Package Name Description Version SC-73 plastic surface-mounted package with increased heatsink; 4 leads SOT223 All information provided in this document is subject to legal disclaimers. 11 July 2014 © NXP Semiconductors N.V. 2014. All rights reserved 2 / 13 BT168GWF NXP Semiconductors SCR 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDRM Conditions Min Max Unit repetitive peak off-state voltage - 600 V VRRM repetitive peak reverse voltage - 600 V IT(AV) average on-state current half sine wave; Tsp ≤ 112 °C; Fig. 1 - 0.63 A IT(RMS) RMS on-state current half sine wave; Tsp ≤ 112 °C; Fig. 2; - 1 A - 8 A - 9 A Fig. 3 ITSM non-repetitive peak on-state current half sine wave; Tj(init) = 25 °C; tp = 10 ms; Fig. 4; Fig. 5 half sine wave; Tj(init) = 25 °C; tp = 8.3 ms I t I t for fusing tp = 10 ms; SIN - 0.32 A s dIT/dt rate of rise of on-state current IT = 2 A; IG = 10 mA; dIG/dt = 100 mA/ - 50 A/µs 2 2 2 µs IGM peak gate current - 1 A VRGM peak reverse gate voltage - 5 V PGM peak gate power - 2 W PG(AV) average gate power - 0.1 W Tstg storage temperature -40 150 °C Tj junction temperature - 125 °C Ptot (W) over any 20 ms period 001aab496 1 0.8 2.2 1.9 113 2.8 0.6 116 4 0.4 conduction angle (degrees) form factor a 30 60 90 120 180 4 2.8 2.2 1.9 1.57 0.2 0 0 0.2 110 Tsp(max) (°C) a = 1.57 0.4 0.6 119 α IT(AV) (A) 122 125 0.8 α = conduction angle; a = form factor = IT(RMS) / IT(AV) Fig. 1. Total power dissipation as a function of average on-state current; maximum values BT168GWF Product data sheet All information provided in this document is subject to legal disclaimers. 11 July 2014 © NXP Semiconductors N.V. 2014. All rights reserved 3 / 13 BT168GWF NXP Semiconductors SCR 001aab498 1.2 112 °C IT(RMS) (A) 001aab500 2 IT(RMS) (A) 1.5 0.8 1 0.4 0.5 0 -50 Fig. 2. 0 50 100 Tsp (°C) 0 10-2 150 RMS on-state current as a function of solder point temperature; maximum values 10-1 1 10 surge duration (s) f = 50 Hz; Tsp = 112 °C Fig. 3. RMS on-state current as a function of surge duration; maximum values 001aab497 103 IT ITSM (A) ITSM t tp Tj(init) = 25 °C max 102 10 1 10-5 10-4 10-3 tp (s) 10-2 tp ≤ 10 ms Fig. 4. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values BT168GWF Product data sheet All information provided in this document is subject to legal disclaimers. 11 July 2014 © NXP Semiconductors N.V. 2014. All rights reserved 4 / 13 BT168GWF NXP Semiconductors SCR 001aab499 10 ITSM (A) 8 6 4 IT ITSM 2 0 t tp Tj(init) = 25 °C max 1 102 10 number of cycles 103 f = 50 Hz Fig. 5. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BT168GWF Product data sheet All information provided in this document is subject to legal disclaimers. 11 July 2014 © NXP Semiconductors N.V. 2014. All rights reserved 5 / 13 BT168GWF NXP Semiconductors SCR 8. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-sp) thermal resistance from junction to solder point Fig. 6 - - 15 K/W Rth(j-a) thermal resistance from junction to ambient free air printed-circuit board mounted; minimum footprint; Fig. 7 - 156 - K/W printed-circuit board mounted; pad area; Fig. 8 - 70 - K/W 003aae245 102 Zth(j-sp) (K/W) 10 1 P 10-1 tp 10-2 10-5 Fig. 6. 10-4 10-3 10-2 10-1 1 tp (s) t 10 Transient thermal impedance from junction to solder point as a function of pulse width BT168GWF Product data sheet All information provided in this document is subject to legal disclaimers. 11 July 2014 © NXP Semiconductors N.V. 2014. All rights reserved 6 / 13 BT168GWF NXP Semiconductors SCR 3.8 min 36 1.5 min 18 6.3 1.5 min (3×) 60 9 4.5 4.6 2.3 10 1.5 min 4.6 001aab508 Fig. 7. 7 All dimensions are in mm 15 Minimum footprint SOT223 50 001aab509 All dimensions are in mm Printed circuit board: FR4 epoxy glass (1.6 mm thick), copper laminate (35 um thick) Fig. 8. BT168GWF Product data sheet Printed circuit board pad area: SOT223 All information provided in this document is subject to legal disclaimers. 11 July 2014 © NXP Semiconductors N.V. 2014. All rights reserved 7 / 13 BT168GWF NXP Semiconductors SCR 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 10 mA; Tj = 25 °C; 70 200 450 µA 3 7.5 13 mA Static characteristics IGT gate trigger current Fig. 9 IL latching current VD = 12 V; IG = 0.5 mA; RGK = 1 kΩ; Tj = 25 °C IH holding current VD = 12 V; RGK = 1 kΩ; Tj = 25 °C 0.5 4.1 10 mA VT on-state voltage IT = 1.2 A; Tj = 25 °C; Fig. 10 - 1.35 1.7 V VGT gate trigger voltage VD = 12 V; IT = 10 mA; Tj = 25 °C - 0.5 0.8 V VD = 600 V; IT = 10 mA; Tj = 125 °C 0.2 0.3 - V ID off-state current VD = 600 V; Tj = 125 °C; RGK = 1 kΩ - 0.05 0.1 mA IR reverse current VR = 600 V; Tj = 125 °C; RGK = 1 kΩ - 0.05 0.1 mA VDM = 402 V; Tj = 125 °C; RGK = 1 kΩ; 350 800 - V/µs - 25 - V/µs Dynamic characteristics dVD/dt rate of rise of off-state voltage (VDM = 67% of VDRM); exponential waveform; Fig. 11 VDM = 402 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit; Fig. 11 BT168GWF Product data sheet All information provided in this document is subject to legal disclaimers. 11 July 2014 © NXP Semiconductors N.V. 2014. All rights reserved 8 / 13 BT168GWF NXP Semiconductors SCR aaa-014022 6 001aab505 5 IT (A) IGT (1) 4 IGT(25°C) (2) (3) 4 3 2 2 1 0 -50 Fig. 9. 0 50 100 Tj (°C) 0 0.4 150 1.2 2 VT (V) 2.8 Vo = 1.0 V; Rs = 0.27 Ω Normalized gate trigger current as a function of junction temperature (1) Tj = 125 °C; typical values (2) Tj = 125 °C; maximum values (3) Tj = 25 °C; maximum values Fig. 10. On-state current as a function of on-state voltage 001aab507 104 dVD/dt (V/µs) (1) 103 102 (2) 10 0 50 100 Tj (°C) 150 (1) RGK = 1 kΩ (2) gate open circuit Fig. 11. Critical rate of rise of off-state voltage as a function of junction temperature; typical values BT168GWF Product data sheet All information provided in this document is subject to legal disclaimers. 11 July 2014 © NXP Semiconductors N.V. 2014. All rights reserved 9 / 13 BT168GWF NXP Semiconductors SCR 10. Package outline Plastic surface-mounted package with increased heatsink; 4 leads D SOT223 E B A X c y HE v M A b1 4 Q A A1 1 2 e1 3 Lp bp w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y mm 1.8 1.5 0.10 0.01 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 4.6 2.3 7.3 6.7 1.1 0.7 0.95 0.85 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC SOT223 JEITA SC-73 EUROPEAN PROJECTION ISSUE DATE 04-11-10 06-03-16 Fig. 12. Package outline SC-73 (SOT223) BT168GWF Product data sheet All information provided in this document is subject to legal disclaimers. 11 July 2014 © NXP Semiconductors N.V. 2014. All rights reserved 10 / 13 BT168GWF NXP Semiconductors SCR In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 11. Legal information 11.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. 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Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 11 July 2014 © NXP Semiconductors N.V. 2014. All rights reserved 11 / 13 BT168GWF NXP Semiconductors SCR grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, ICODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP Semiconductors N.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. BT168GWF Product data sheet All information provided in this document is subject to legal disclaimers. 11 July 2014 © NXP Semiconductors N.V. 2014. All rights reserved 12 / 13 BT168GWF NXP Semiconductors SCR 12. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Limiting values .......................................................3 8 Thermal characteristics .........................................6 9 Characteristics ....................................................... 8 10 Package outline ................................................... 10 11 11.1 11.2 11.3 11.4 Legal information .................................................11 Data sheet status ............................................... 11 Definitions ...........................................................11 Disclaimers .........................................................11 Trademarks ........................................................ 12 © NXP Semiconductors N.V. 2014. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 11 July 2014 BT168GWF Product data sheet All information provided in this document is subject to legal disclaimers. 11 July 2014 © NXP Semiconductors N.V. 2014. All rights reserved 13 / 13