140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 BFR91 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain – Bandwidth Product, fT = 5 GHz (typ) @ IC = 30 mA • Low Noise Figure – NF = 1.9 dB (typ) @ f = 0.5 GHz, 2.5 dB (typ) @ 1GHz • High Power Gain – Gmax = 16 dB (typ) @ f = 0.5 GHz, 10.9dB (typ) @ 1GHz Macro T (STYLE #2) DESCRIPTION: Designed primarily for use in high-gain, low noise, small-signal amplifiers. Also used in applications requiring fast switching times. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO Parameter Collector-Emitter Voltage Value 12 Unit Vdc VCBO VEBO Collector-Base Voltage 15 Vdc Emitter-Base Voltage 3.0 Vdc IC Collector Current 35 mA 180 2.0 mWatts mW/ ºC -65 to +150 ºC 500 ºC/W Thermal Data P D Tstg R θJA Total Device Dissipation @ TA = 60ºC Derate above 60ºC Storage Temperature Total Device Dissipation @ TA = 60ºC Derate above 60ºC MSC1308.PDF 10-25-99 BFR91 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO BVCB0 BVEBO ICBO Test Conditions Value Min. Typ. Max. Unit Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) 12 - - Vdc Collector-Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) 15 - - Vdc Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) 3.0 - - Vdc - - 50 nA 25 - 250 - Collector Cutoff Current (VCB = 5.0 Vdc, VBE = 0 Vdc) (on) HFE DC Current Gain (IC = 30 mAdc, VCE = 5.0 Vdc) DYNAMIC Symbol Ftau CCB Test Conditions Value Min. Typ. Max. Unit Current-Gain – Bandwidth Product (IC = 30 mA, VCE = 5.0 Vdc, f = 0.5 GHz) - 5.0 - GHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) - 0.7 1.0 pF MSC1308.PDF 10-25-99 BFR91 FUNCTIONAL Symbol NF GNF 2 |S21| MSG G U max Test Conditions Value Noise Figure (IC = 2.0 mAdc, VCE = 5.0 Vdc, f = 0.5 GHz) (IC = 2.0 mAdc, VCE = 5.0 Vdc, f = 1.0 GHz) Power Gain at Optimum Noise Figure (IC = 2.0 mAdc, VCE = 5.0 Vdc, f = 0.5 GHz) (IC = 2.0 mAdc, VCE = 5.0 Vdc, f = 1.0 GHz) Insertion Gain (IC = 30 mAdc, VCE = 5.0 Vdc, f = 0.5 GHz) (IC = 30 mAdc, VCE = 5.0 Vdc, f = 1.0 GHz) Maximum Stable Gain (IC = 30 mAdc, VCE = 5.0 Vdc, f = 0.5 GHz) (IC = 30 mAdc, VCE = 5.0 Vdc, f = 1.0 GHz) Maximum Unilateral Gain (1) (IC = 30 mAdc, VCE = 5.0 Vdc, f = 0.5 GHz) (IC = 30 mAdc, VCE = 5.0 Vdc, f = 1.0 GHz) Min. Typ. Max. Unit - 1.9 2.5 - dB - 11 8.0 - dB 14.5 15.5 10.2 - dB - 18.6 12.9 - dB - 16.5 10.9 - dB Table 1. Common Emitter S-Parameters, @ VCE = 5.0 V, IC = 30 mA f (MHz) S11 |S11| ∠φ S21 |S21| ∠φ S12 |S12| ∠φ S22 |S22| ∠φ 100 0.258 -115 25.77 123 0.021 76 0.536 -33 200 0.290 -149 14.66 103 0.038 74 0.384 -43 300 0.298 -164 10.05 94 0.054 75 0.311 -45 500 0.305 -179 6.18 84 0.085 75 0.264 -49 700 0.302 170 4.5 77 0.117 73 0.256 -52 800 0.304 166 3.98 73 0.133 72 0.257 -54 1000 0.304 158 3.24 67 0.166 70 0.251 -57 1500 0.256 134 2.3 54 0.24 65 0.263 -69 MSC1308.PDF 10-25-99 BFR91 3 10 15 200 3.4 30 15 30 15 15 30 400 4.5 1.5 6 17 900 1 12 50 300 5.5 50 6 13 1600 1 15 40 330 TO-39 MRF517 NPN 300 7.5 50 15 5.5 4600 3 25 150 18 1000 TO-72 MRF904 NPN 450 1.5 5 6 11 4000 1 15 30 12 50 TO-72 2N6304 NPN 450 5 2 5 14 1400 1 15 50 MACRO T BFR91 NPN 500 1.9 2 5 16.5 5000 1 12 35 MACRO T BFR96 NPN 500 2 10 10 14.5 500 2.6 15 100 15 200 15 200 15 30 50 Device 12.5 16 500 12.5 16 500 TO-39 MRF607 NPN 175 1.75 11.5 50 12.5 16 TO-39 2N6255 NPN 175 3 7.8 50 12.5 TO-72 2N5179 NPN 200 6 NPN 5 1 2 0.5 10 65 7.5 16 150 11 SO-8 MRF5812, R1, R2 NPN 500 2 50 10 15.5 17.8 5000 MACRO X MRF581A NPN 500 2 50 10 14 15 5000 Macro BFR90 NPN 500 2.4 2 10 15 18 5000 400 TO-72 BFY90 NPN 500 2.5 2 5 20 1300 15 TO-72 MRF914 NPN 500 2.5 5 10 15 4500 12 40 MACRO X MRF581 NPN 500 2.5 50 10 15 17.8 5000 16 200 MA C R O X MRF559 NPN 5 1 2 0.5 13 60 12.5 16 150 TO-39 2N3866A NPN 4 0 0 1 10 45 28 30 400 M R F 3 8 6 6 , R 1 , R 2 NPN 4 0 0 1 10 45 28 30 SO-8 Type 3.4 200 NPN 60 50 MRF559 Device 200 NPN 11.5 11.5 MA C R O X P O W ER MA C R O MRF555 NPN 4 7 0 1.5 11 50 12.5 16 400 P O W ER MA C R O MRF555T NPN 4 7 0 1.5 11 50 12.5 16 400 MA C R O X MRF559 NPN 8 7 0 0.5 6.5 70 7.5 16 150 MA C R O X MRF559 NPN 8 7 0 0.5 9.5 65 12.5 16 150 SO-8 MRF8372,R1,R2 NPN 8 7 0 0.75 8 55 12.5 16 200 P O W ER MA C R O MRF557 NPN 8 7 0 1.5 8 55 12.5 16 400 P O W ER MA C R O MRF557T NPN 8 7 0 1.5 8 55 12.5 16 400 TO-39 MRF586 NPN 500 3 90 15 11 14.5 4500 2.2 17 200 MRF951 NPN 1000 1.3 5 6 14 17 8000 0.45 10 100 MACRO X MRF571 NPN 1000 1.5 10 6 10 8000 1 10 70 MACRO T BFR91 NPN 1000 2.5 2 5 8 11 5000 1 12 35 MACRO T BFR90 NPN 1000 3 2 10 10 12.5 5000 1 15 30 TO-39 MRF545 PNP 14 1400 2 70 400 TO-39 MRF544 NPN 13.5 1500 70 400 RF (LNA / General Purpose) Selection Guide 1 5 1 2 4 4 2 3 Macro T MSC1308.PDF 10-25-99 Macro X 1 MACRO X RF (Low Power PA / General Purpose) Selection Guide 2 400 400 2N2857 1.5 1.5 1300 20 30 2N5179 NPN 175 NPN 175 20 3.5 TO-72 MRF553 MRF553T MRF5943, R1, R2 NPN 1200 11.4 1000 TO-72 POWER MACRO POWER MACRO SO-8 12 Ftau (MHz) 200 NPN Ccb(pF) BVCEO IC max (mA) NPN MRF5943C Gu Max (dB) 2N5109 TO-39 GN (dB) TO-39 400 Freq (MHz) 400 20 NF (dB) NF IC (mA) NF VCE 20 12 Package 12 50 IC max (mA) 60 10 BVCEO 18 1 GPE VCC 0.15 NPN 175 Efficiency (%) NPN 175 2N4427 GPE (dB) Pout (watts) MRF4427, R2 Type SO-8 TO-39 Package GPE Freq (MHz) RF Low Power PA, LNA, and General Purpose RF Discrete Selector Guide Power Macro SO-8 BFR91 PIN 1. COLLECTOR 2. EMITTER 3. BASE 1. 2. 3. MSC1308.PDF 10-25-99