ACE2302 N-Channel Enhancement Mode MOSFET Description The ACE2302 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and Battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. Features 20V/3.6A, RDS(ON)=80mΩ@VGS=4.5V 20V/3.1A, RDS(ON)=95mΩ@VGS=2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability Application Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ ID 3.2 A 2.6 Pulsed Drain Current IDM 10 A Continuous Source Current (Diode Conduction) IS 1.6 A Power Dissipation TA=25℃ TA=70℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient PD TJ TSTG RθJA 1.25 W 0.8 150 O C -55/150 O C 100 O C/W VER 1.3 1 ACE2302 N-Channel Enhancement Mode MOSFET Packaging Type SOT-23-3 3 SOT-23-3 Description 1 1 Gate 2 Source 3 Drain 2 Ordering information ACE2302 XX + H Halogen - free Pb - free BM : SOT-23-3 Electrical Characteristics TA=25℃, unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS=0V, ID=250 uA 20 VGS(th) VD=VGS, ID=250uA 0.45 Gate Leakage Current IGSS VDS=0V,VGS=±12V ±100 Zero Gate Voltage Drain Current IDSS VDS=20V, VGS=0V 1 VDS=20V, VGS=0V TJ=55℃ 10 On-State Drain Current ID(ON) Drain-Source On-Resistance RDS(ON) Forward gfs VDS≧5V, VGS=4.5V 6 VDS≧5V, VGS=2.5V 4 V 1.2 uA A VGS=4.5V, ID=3.6A 0.050 0.080 VGS=2.5V, ID=3.1A 0.070 0.095 VDS=5V,ID=3.6A nA 10 Ω S VER 1.3 2 ACE2302 N-Channel Enhancement Mode MOSFET Transconductance Diode Forward Voltage VSD IS=1.6A, VGS=0V 0.85 1.2 5.4 10 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 1.4 Input Capacitance Ciss 340 Output Capacitance Reverse Transfer Capacitance Coss Turn-On Time Turn-Off Time VDS=10V, VGS=4.5V, ID=3.6A VDS=10V, VGS=0V, f=1MHz 0.65 nC 115 pF Crss 33 td(on) 12 25 36 60 34 60 10 25 tr td(off) VDD=10V, RL=5.5Ω, ID=3.6A, VGEN=4.5V, RG=6Ω tf nS Typical Performance Characteristics Output Characteristics VDS-Drain-to-Source Voltage (V) Transfer Characteristics VGS-Gate-to-Source Voltage (V) VER 1.3 3 ACE2302 N-Channel Enhancement Mode MOSFET On-Resistance vs. Drain Current ID-Drain Current (A) Gate Charge Qg-Total Gate Charge (nC) Source-Drain Diode Forward Voltage VSD-Source-to-Drain Voltage (V) Capacitance V DS-Drain-to-Source Voltage (V) On-Resistance vs. Junction Temperature TJ-Junction Temperature (℃) On-Resistance vs. Gate-to-Source Voltage V GS-Gate-to-Source Voltage (V) VER 1.3 4 ACE2302 N-Channel Enhancement Mode MOSFET Threshold Voltage Single Pulse Power TJ-Temperature(℃) Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) VER 1.3 5 ACE2302 N-Channel Enhancement Mode MOSFET Packing Information SOT-23-3 VER 1.3 6 ACE2302 N-Channel Enhancement Mode MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.3 7