CY7C1470BV25 CY7C1472BV25, CY7C1474BV25 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL™ Architecture Features Functional Description ■ Pin-compatible and functionally equivalent to ZBT™ ■ Supports 250 MHz bus operations with zero wait states ❐ Available speed grades are 250, 200, and 167 MHz ■ Internally self-timed output buffer control to eliminate the need to use asynchronous OE ■ Fully registered (inputs and outputs) for pipelined operation ■ Byte Write capability ■ Single 2.5V power supply ■ 2.5V IO supply (VDDQ) The CY7C1470BV25, CY7C1472BV25, and CY7C1474BV25 are 2.5V, 2M x 36/4M x 18/1M x 72 synchronous pipelined burst SRAMs with No Bus Latency™ (NoBL™) logic, respectively. They are designed to support unlimited true back-to-back read or write operations with no wait states. The CY7C1470BV25, CY7C1472BV25, and CY7C1474BV25 are equipped with the advanced (NoBL) logic required to enable consecutive read or write operations with data being transferred on every clock cycle. This feature dramatically improves the throughput of data in systems that require frequent read or write transitions. The CY7C1470BV25, CY7C1472BV25, and CY7C1474BV25 are pin-compatible and functionally equivalent to ZBT devices. ■ Fast clock-to-output times ❐ 3.0 ns (for 250-MHz device) ■ Clock Enable (CEN) pin to suspend operation ■ Synchronous self-timed writes ■ CY7C1470BV25, CY7C1472BV25 available in JEDEC-standard Pb-free 100-pin TQFP, Pb-free and non-Pb-free 165-ball FBGA package. CY7C1474BV25 available in Pb-free and non-Pb-free 209-ball FBGA package ■ IEEE 1149.1 JTAG Boundary Scan compatible ■ Burst capability—linear or interleaved burst order ■ “ZZ” Sleep Mode option and Stop Clock option All synchronous inputs pass through input registers controlled by the rising edge of the clock. All data outputs pass through output registers controlled by the rising edge of the clock. The clock input is qualified by the Clock Enable (CEN) signal, which when deasserted suspends operation and extends the previous clock cycle. Write operations are controlled by the Byte Write Selects (BWa–BWd for CY7C1470BV25, BWa–BWb for CY7C1472BV25, and BWa–BWh for CY7C1474BV25) and a Write Enable (WE) input. All writes are conducted with on-chip synchronous self-timed write circuitry. Three synchronous Chip Enables (CE1, CE2, CE3) and an asynchronous Output Enable (OE) provide for easy bank selection and output tri-state control. To avoid bus contention, the output drivers are synchronously tri-stated during the data portion of a write sequence. Selection Guide Description Maximum Access Time Maximum Operating Current Maximum CMOS Standby Current Cypress Semiconductor Corporation Document #: 001-15032 Rev. *D • 250 MHz 200 MHz 167 MHz Unit 3.0 450 120 3.0 450 120 3.4 400 120 ns mA mA 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised February 29, 2008 [+] Feedback CY7C1470BV25 CY7C1472BV25, CY7C1474BV25 Logic Block Diagram – CY7C1470BV25 (2M x 36) A0, A1, A ADDRESS REGISTER 0 A1 A1' D1 Q1 A0 A0' BURST D0 Q0 LOGIC MODE CLK CEN ADV/LD C C WRITE ADDRESS REGISTER 1 WRITE ADDRESS REGISTER 2 S E N S E ADV/LD WRITE REGISTRY AND DATA COHERENCY CONTROL LOGIC BW a BW b BW c BW d WRITE DRIVERS MEMORY ARRAY A M P S WE O U T P U T R E G I S T E R S E INPUT REGISTER 1 OE CE1 CE2 CE3 ZZ S T E E R I N G INPUT REGISTER 0 E O U T P U T D A T A B U F F E R S DQ s DQ Pa DQ Pb DQ Pc DQ Pd E E READ LOGIC SLEEP CONTROL Logic Block Diagram – CY7C1472BV25 (4M x 18) A0, A1, A ADDRESS REGISTER 0 A1 A1' D1 Q1 A0 A0' BURST D0 Q0 LOGIC MODE CLK CEN ADV/LD C C WRITE ADDRESS REGISTER 1 WRITE ADDRESS REGISTER 2 S E N S E ADV/LD BW a WRITE REGISTRY AND DATA COHERENCY CONTROL LOGIC WRITE DRIVERS MEMORY ARRAY A M P S BW b WE O U T P U T R E G I S T E R S O U T P U T D A T A B U F F E R S S T E E R I N G E INPUT REGISTER 1 OE CE1 CE2 CE3 ZZ Document #: 001-15032 Rev. *D E DQ s DQ Pa DQ Pb E INPUT REGISTER 0 E READ LOGIC Sleep Control Page 2 of 29 [+] Feedback CY7C1470BV25 CY7C1472BV25, CY7C1474BV25 Logic Block Diagram – CY7C1474BV25 (1M x 72) A0, A1, A ADDRESS REGISTER 0 A1 A1' D1 Q1 A0 A0' BURST D0 Q0 LOGIC MODE CLK CEN ADV/LD C C WRITE ADDRESS REGISTER 1 WRITE ADDRESS REGISTER 2 S E N S E ADV/LD BW a BW b BW c BW d BW e BW f BW g BW h WRITE REGISTRY AND DATA COHERENCY CONTROL LOGIC WRITE DRIVERS MEMORY ARRAY A M P S O U T P U T R E G I S T E R S O U T P U T D A T A B U F F E R S S T E E R I N G E E DQ s DQ Pa DQ Pb DQ Pc DQ Pd DQ Pe DQ Pf DQ Pg DQ Ph WE INPUT REGISTER 1 OE CE1 CE2 CE3 ZZ Document #: 001-15032 Rev. *D E INPUT REGISTER 0 E READ LOGIC Sleep Control Page 3 of 29 [+] Feedback CY7C1470BV25 CY7C1472BV25, CY7C1474BV25 Pin Configurations 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 DQPb DQb DQb VDDQ VSS NC NC NC VDDQ VSS NC NC DQb DQb VSS VDDQ CY7C1472BV25 (4M × 18) 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 Document #: 001-15032 Rev. *D A NC NC VDDQ VSS NC DQPa DQa DQa VSS VDDQ DQa DQa VSS NC VDD ZZ DQa DQa VDDQ VSS DQa DQa NC NC VSS VDDQ NC NC NC A A A A A A A A A VSS VDD NC(288) NC(144) A A A A A A A A A VSS VDD 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 DQb DQb DQb DQb VSS VDDQ DQb DQb DQb DQb NC VSS VDD NC NC VDD VSS ZZ DQb DQa DQa DQb VDDQ VDDQ VSS VSS DQa DQb DQa DQb DQa DQPb NC DQa VSS VSS VDDQ VDDQ NC DQa DQa NC DQPa NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 MODE A A A A A1 A0 CY7C1470BV25 (2M × 36) NC(288) NC(144) DQc DQc NC VDD NC VSS DQd DQd VDDQ VSS DQd DQd DQd DQd VSS VDDQ DQd DQd DQPd 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 VSS DQc DQc DQc DQc VSS VDDQ 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 MODE A A A A A1 A0 DQPc DQc DQc VDDQ A A A A CE1 CE2 NC NC BWb BWa CE3 VDD VSS CLK WE CEN OE ADV/LD A A A A 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 A A CE1 CE2 BWd BWc BWb BWa CE3 VDD VSS CLK WE CEN OE ADV/LD A A Figure 1. 100-Pin TQFP Pinout Page 4 of 29 [+] Feedback CY7C1470BV25 CY7C1472BV25, CY7C1474BV25 Pin Configurations (continued) 165-Ball FBGA (15 x 17 x 1.4 mm) Pinout CY7C1470BV25 (2M x 36) 1 2 3 4 5 6 7 8 9 10 11 A B C D E F G H J K L M N P NC/576M A CE1 BWc BWb CE3 ADV/LD A A NC BWa VSS CLK CEN WE OE A A NC VSS VSS VSS VDD VDDQ VDDQ NC DQb DQPb DQb VDDQ DQb DQb R NC/1G A CE2 DQPc DQc NC DQc VDDQ VDDQ BWd VSS VDD VSS VSS VSS DQc DQc VDDQ VDD VSS VSS VSS VDD DQc DQc VDDQ VDD VSS VSS VSS VDD VDDQ DQb DQb DQc NC DQd DQc NC DQd VDDQ NC VDDQ VDD VDD VDD VSS VSS VSS VSS VSS VSS VSS VSS VSS VDD VDD VDD VDDQ NC VDDQ DQb NC DQa DQb ZZ DQa DQd DQd VDDQ VDD VSS VSS VSS VDD VDDQ DQa DQa DQd DQd VDDQ VDD VSS VSS VSS VDD VDDQ DQa DQa DQd DQPd DQd NC VDDQ VDDQ VDD VSS VSS NC VSS NC VSS NC VDD VSS VDDQ VDDQ DQa NC DQa DQPa NC/144M A A A TDI A1 TDO A A A MODE A A A TMS A0 TCK A A A A 8 9 10 11 A A NC/288M CY7C1472BV25 (4M x 18) A B C D E F G H J K L M N P R 1 2 3 4 5 6 NC/576M A CE1 NC CE3 CEN ADV/LD A NC/1G A CE2 BWb NC BWa CLK A NC NC DQb VDDQ VSS VDDQ VSS VDD VSS VSS VSS OE VSS A NC NC WE VSS VSS VDD VDDQ VDDQ NC NC DQPa DQa NC DQb VDDQ VDD VSS VSS VSS VDD VDDQ NC DQa NC DQb VDDQ VDD VSS VSS VSS VDD VDDQ NC DQa NC NC DQb DQb NC NC VDDQ NC VDDQ VDD VDD VDD VSS VSS VSS VSS VSS VSS VSS VSS VSS VDD VDD VDD VDDQ NC VDDQ NC NC DQa DQa ZZ NC DQb NC VDDQ VDD VSS VSS VSS VDD VDDQ DQa NC DQb NC VDDQ VDD VSS VSS VSS VDD VDDQ DQa NC DQb DQPb NC NC VDDQ VDDQ VDD VSS VSS NC VSS NC VSS NC VDD VSS VDDQ VDDQ DQa NC NC NC NC/144M A A A TDI A1 TDO A A A MODE A A A TMS A0 TCK A A A Document #: 001-15032 Rev. *D 7 NC/288M A Page 5 of 29 [+] Feedback CY7C1470BV25 CY7C1472BV25, CY7C1474BV25 Pin Configurations (continued) 209-Ball FBGA (14 x 22 x 1.76 mm) Pinout CY7C1474BV25 (1M × 72) 1 2 3 4 5 6 7 8 9 10 11 A DQg DQg A CE2 A ADV/LD A CE3 A DQb DQb B DQg DQg BWSc BWSg NC WE A BWSb BWSf DQb DQb C DQg DQg BWSh BWSd NC/576M CE1 NC BWSe BWSa DQb DQb D DQg DQg VSS NC NC/1G OE NC NC VSS DQb DQb E DQPg DQPc VDDQ VDDQ VDD VDD VDD VDDQ VDDQ DQPf DQPb F DQc DQc VSS VSS VSS NC VSS VSS VSS DQf DQf G DQc DQc VDDQ VDDQ VDD NC VDD VDDQ VDDQ DQf DQf H DQc DQc VSS VSS VSS NC VSS VSS VSS DQf DQf J DQc DQc VDDQ VDDQ VDD NC VDD VDDQ VDDQ DQf DQf K NC NC CLK NC VSS CEN VSS NC NC NC NC L DQh DQh VDDQ VDDQ VDD NC VDD VDDQ VDDQ DQa DQa M DQh DQh VSS VSS VSS NC VSS VSS VSS DQa DQa N DQh DQh VDDQ VDDQ VDD NC VDD VDDQ VDDQ DQa DQa P DQh DQh VSS VSS VSS ZZ VSS VSS VSS DQa DQa R DQPd DQPh VDDQ VDDQ VDD VDD VDD VDDQ VDDQ DQPa DQPe T DQd DQd VSS NC NC MODE NC NC VSS DQe DQe U DQd DQd NC/144M A A A A A NC/288M DQe DQe V DQd DQd A A A A1 A A A DQe DQe W DQd TMS TDI A TDO TCK DQe DQe DQd Document #: 001-15032 Rev. *D A A0 Page 6 of 29 [+] Feedback CY7C1470BV25 CY7C1472BV25, CY7C1474BV25 Table 1. Pin Definitions Pin Name IO Type Pin Description A0 A1 A InputSynchronous Address Inputs Used to Select One of the Address Locations. Sampled at the rising edge of the CLK. BWa BWb BWc BWd BWe BWf BWg BWh InputSynchronous Byte Write Select Inputs, Active LOW. Qualified with WE to conduct writes to the SRAM. Sampled on the rising edge of CLK. BWa controls DQa and DQPa, BWb controls DQb and DQPb, BWc controls DQc and DQPc, BWd controls DQd and DQPd, BWe controls DQe and DQPe, BWf controls DQf and DQPf, BWg controls DQg and DQPg, BWh controls DQh and DQPh. WE InputSynchronous Write Enable Input, Active LOW. Sampled on the rising edge of CLK if CEN is active LOW. This signal must be asserted LOW to initiate a write sequence. ADV/LD InputSynchronous Advance/Load Input Used to Advance the On-Chip Address Counter or Load a New Address. When HIGH (and CEN is asserted LOW) the internal burst counter is advanced. When LOW, a new address can be loaded into the device for an access. After being deselected, ADV/LD must be driven LOW to load a new address. CLK InputClock Clock Input. Used to capture all synchronous inputs to the device. CLK is qualified with CEN. CLK is only recognized if CEN is active LOW. CE1 InputSynchronous Chip Enable 1 Input, Active LOW. Sampled on the rising edge of CLK. Used in conjunction with CE2 and CE3 to select/deselect the device. CE2 InputSynchronous Chip Enable 2 Input, Active HIGH. Sampled on the rising edge of CLK. Used in conjunction with CE1 and CE3 to select/deselect the device. CE3 InputSynchronous Chip Enable 3 Input, Active LOW. Sampled on the rising edge of CLK. Used in conjunction with CE1 and CE2 to select/deselect the device. OE InputAsynchronous Output Enable, Active LOW. Combined with the synchronous logic block inside the device to control the direction of the IO pins. When LOW, the IO pins can behave as outputs. When deasserted HIGH, IO pins are tri-stated, and act as input data pins. OE is masked during the data portion of a write sequence, during the first clock when emerging from a deselected state and when the device has been deselected. CEN InputSynchronous Clock Enable Input, Active LOW. When asserted LOW the clock signal is recognized by the SRAM. When deasserted HIGH the clock signal is masked. Since deasserting CEN does not deselect the device, CEN can be used to extend the previous cycle when required. DQs IOSynchronous Bidirectional Data IO Lines. As inputs, they feed into an on-chip data register that is triggered by the rising edge of CLK. As outputs, they deliver the data contained in the memory location specified by A[18:0] during the previous clock rise of the read cycle. The direction of the pins is controlled by OE and the internal control logic. When OE is asserted LOW, the pins can behave as outputs. When HIGH, DQa–DQh are placed in a tri-state condition. The outputs are automatically tri-stated during the data portion of a write sequence, during the first clock when emerging from a deselected state, and when the device is deselected, regardless of the state of OE. DQPX IOSynchronous Bidirectional Data Parity IO Lines. Functionally, these signals are identical to DQ[71:0]. During write sequences, DQPa is controlled by BWa, DQPb is controlled by BWb, DQPc is controlled by BWc, and DQPd is controlled by BWd, DQPe is controlled by BWe, DQPf is controlled by BWf, DQPg is controlled by BWg, DQPh is controlled by BWh. MODE Input Strap Pin Mode Input. Selects the burst order of the device. Tied HIGH selects the interleaved burst order. Pulled LOW selects the linear burst order. MODE must not change states during operation. When left floating MODE defaults HIGH, to an interleaved burst order. TDO TDI JTAG Serial Output Synchronous Serial Data Out to the JTAG Circuit. Delivers data on the negative edge of TCK. JTAG Serial Input Serial Data In to the JTAG Circuit. Sampled on the rising edge of TCK. Synchronous Document #: 001-15032 Rev. *D Page 7 of 29 [+] Feedback CY7C1470BV25 CY7C1472BV25, CY7C1474BV25 Table 1. Pin Definitions (continued) Pin Name TMS IO Type Test Mode Select TMS Pin Controls the Test Access Port State Machine. Sampled on the rising edge of TCK. Synchronous TCK JTAG Clock VDD Power Supply VDDQ Pin Description Clock Input to the JTAG Circuitry. Power Supply Inputs to the Core of the Device. IO Power Supply Power Supply for the IO Circuitry. VSS Ground NC – No Connects. This pin is not connected to the die. NC(144M, 288M, 576M, 1G) – These Pins are Not Connected. They are used for expansion to the 144M, 288M, 576M, and 1G densities. InputAsynchronous ZZ “Sleep” Input. This active HIGH input places the device in a non-time critical “sleep” condition with data integrity preserved. For normal operation, this pin has must be LOW or left floating. ZZ pin has an internal pull down. ZZ Ground for the Device. Must be connected to ground of the system. Functional Overview The CY7C1470BV25, CY7C1472BV25, and CY7C1474BV25 are synchronous-pipelined Burst NoBL SRAMs designed specifically to eliminate wait states during read or write transitions. All synchronous inputs pass through input registers controlled by the rising edge of the clock. The clock signal is qualified with the Clock Enable input signal (CEN). If CEN is HIGH, the clock signal is not recognized and all internal states are maintained. All synchronous operations are qualified with CEN. All data outputs pass through output registers controlled by the rising edge of the clock. Maximum access delay from the clock rise (tCO) is 3.0 ns (250-MHz device). Accesses can be initiated by asserting all three Chip Enables (CE1, CE2, CE3) active at the rising edge of the clock. If CEN is active LOW and ADV/LD is asserted LOW, the address presented to the device is latched. The access can either be a read or write operation, depending on the status of the Write Enable (WE). BW[x] can be used to conduct Byte Write operations. Write operations are qualified by the Write Enable (WE). All writes are simplified with on-chip synchronous self-timed write circuitry. Three synchronous Chip Enables (CE1, CE2, CE3) and an asynchronous Output Enable (OE) simplify depth expansion. All operations (reads, writes, and deselects) are pipelined. ADV/LD must be driven LOW after the device is deselected to load a new address for the next operation. Single Read Accesses A read access is initiated when the following conditions are satisfied at clock rise: (1) CEN is asserted LOW, (2) CE1, CE2, and CE3 are ALL asserted active, (3) the input signal WE is deasserted HIGH, and (4) ADV/LD is asserted LOW. The address presented to the address inputs is latched into the Address Register and presented to the memory core and control logic. The control logic determines that a read access is in progress and allows the requested data to propagate to the input of the output register. At the rising edge of the next clock the requested data is allowed to propagate through the output Document #: 001-15032 Rev. *D register and onto the data bus within 2.6 ns (250-MHz device) provided OE is active LOW. After the first clock of the read access the output buffers are controlled by OE and the internal control logic. OE must be driven LOW to drive out the requested data. During the second clock, a subsequent operation (read, write, or deselect) can be initiated. Deselecting the device is also pipelined. Therefore, when the SRAM is deselected at clock rise by one of the chip enable signals, its output tri-states following the next clock rise. Burst Read Accesses The CY7C1470BV25, CY7C1472BV25, and CY7C1474BV25 have an on-chip burst counter that enables the user to supply a single address and conduct up to four reads without reasserting the address inputs. ADV/LD must be driven LOW to load a new address into the SRAM, as described in the Single Read Accesses section. The sequence of the burst counter is determined by the MODE input signal. A LOW input on MODE selects a linear burst mode, a HIGH selects an interleaved burst sequence. Both burst counters use A0 and A1 in the burst sequence, and wraps around when incremented sufficiently. A HIGH input on ADV/LD increments the internal burst counter regardless of the state of chip enables inputs or WE. WE is latched at the beginning of a burst cycle. Therefore, the type of access (read or write) is maintained throughout the burst sequence. Single Write Accesses Write accesses are initiated when the following conditions are satisfied at clock rise: (1) CEN is asserted LOW, (2) CE1, CE2, and CE3 are ALL asserted active, and (3) the signal WE is asserted LOW. The address presented to the address inputs is loaded into the Address Register. The write signals are latched into the Control Logic block. On the subsequent clock rise the data lines are automatically tri-stated regardless of the state of the OE input signal. This allows the external logic to present the data on DQ and DQP (DQa,b,c,d/DQPa,b,c,d for CY7C1470BV25, DQa,b/DQPa,b for CY7C1472BV25, and DQa,b,c,d,e,f,g,h/DQPa,b,c,d,e,f,g,h for CY7C1474BV25). In addition, the address for the subsequent Page 8 of 29 [+] Feedback CY7C1470BV25 CY7C1472BV25, CY7C1474BV25 access (read, write, or deselect) is latched into the Address Register (provided the appropriate control signals are asserted). On the next clock rise the data presented to DQ and DQP (DQa,b,c,d/DQPa,b,c,d for CY7C1470BV25, DQa,b/DQPa,b for CY7C1472BV25, DQa,b,c,d,e,f,g,h/DQPa,b,c,d,e,f,g,h for CY7C1474BV25) (or a subset for Byte Write operations, see “Partial Write Cycle Description” on page 11 for details) inputs is latched into the device and the Write is complete. The data written during the Write operation is controlled by BW (BWa,b,c,d for CY7C1470BV25, BWa,b for CY7C1472BV25, and BWa,b,c,d,e,f,g,h for CY7C1474BV25) signals. The CY7C1470BV25, CY7C1472BV25, and CY7C1474BV25 provides Byte Write capability that is described in “Partial Write Cycle Description” on page 11. Asserting the WE input with the selected BW input selectively writes to only the desired bytes. Bytes not selected during a Byte Write operation remain unaltered. A synchronous self-timed write mechanism has been provided to simplify the write operations. Byte Write capability has been included to greatly simplify read, modify, or write sequences, which can be reduced to simple Byte Write operations. Because the CY7C1470BV25, CY7C1472BV25, and CY7C1474BV25 are common IO devices, data must not be driven into the device while the outputs are active. OE can be deasserted HIGH before presenting data to the DQ and DQP (DQa,b,c,d/DQPa,b,c,d for CY7C1470BV25, DQa,b/DQPa,b for CY7C1472BV25, and DQa,b,c,d,e,f,g,h/DQPa,b,c,d,e,f,g,h for CY7C1474BV25) inputs. Doing so tri-states the output drivers. As a safety precaution, DQ and DQP (DQa,b,c,d/DQPa,b,c,d for CY7C1470BV25, DQa,b/DQPa,b for CY7C1472BV25, and DQa,b,c,d,e,f,g,h/DQPa,b,c,d,e,f,g,h for CY7C1474BV25) are automatically tri-stated during the data portion of a write cycle, regardless of the state of OE. on page 8. When ADV/LD is driven HIGH on the subsequent clock rise, the Chip Enables (CE1, CE2, and CE3) and WE inputs are ignored and the burst counter is incremented. The correct BW (BWa,b,c,d for CY7C1470BV25, BWa,b for CY7C1472BV25, and BWa,b,c,d,e,f,g,h for CY7C1474BV25) inputs must be driven in each cycle of the burst write to write the correct bytes of data. Sleep Mode The ZZ input pin is an asynchronous input. Asserting ZZ places the SRAM in a power conservation “sleep” mode. Two clock cycles are required to enter into or exit from this “sleep” mode. While in this mode, data integrity is guaranteed. Accesses pending when entering the “sleep” mode are not considered valid nor is the completion of the operation guaranteed. The device must be deselected before entering the “sleep” mode. CE1, CE2, and CE3, must remain inactive for the duration of tZZREC after the ZZ input returns LOW. Table 2. Linear Burst Address Table (MODE = GND) First Address Second Address Third Address Fourth Address A1,A0 A1,A0 A1,A0 A1,A0 00 01 10 11 01 10 11 00 10 11 00 01 11 00 01 10 Table 3. Interleaved Burst Address Table (MODE = Floating or VDD) Burst Write Accesses The CY7C1470BV25, CY7C1472BV25, and CY7C1474BV25 has an on-chip burst counter that enables the user to supply a single address and conduct up to four write operations without reasserting the address inputs. ADV/LD must be driven LOW to load the initial address, as described in “Single Write Accesses” First Address A1,A0 00 01 10 11 Second Address A1,A0 01 00 11 10 Third Address A1,A0 10 11 00 01 Fourth Address A1,A0 11 10 01 00 ZZ Mode Electrical Characteristics Parameter Description Test Conditions Min Max Unit IDDZZ Sleep mode standby current ZZ > VDD − 0.2V 120 mA tZZS Device operation to ZZ ZZ > VDD − 0.2V 2tCYC ns tZZREC ZZ recovery time ZZ < 0.2V tZZI ZZ active to sleep current This parameter is sampled tRZZI ZZ Inactive to exit sleep current This parameter is sampled Document #: 001-15032 Rev. *D 2tCYC ns 2tCYC 0 ns ns Page 9 of 29 [+] Feedback CY7C1470BV25 CY7C1472BV25, CY7C1474BV25 Table 4. Truth Table The truth table for CY7C1470BV25, CY7C1472BV25, and CY7C1474BV25 follows. [1, 2, 3, 4, 5, 6, 7] Address Used CE ZZ ADV/LD WE BWx OE CEN CLK DQ Deselect Cycle None H L L X X X L L-H Tri-State Continue Deselect Cycle None X L H X X X L L-H Tri-State External L L L H X L L L-H Data Out (Q) Next X L H X X L L L-H Data Out (Q) External L L L H X H L L-H Tri-State Next X L H X X H L L-H Tri-State External L L L L L X L L-H Data In (D) Write Cycle (Continue Burst) Next X L H X L X L L-H Data In (D) NOP/Write Abort (Begin Burst) None L L L L H X L L-H Tri-State Write Abort (Continue Burst) Next X L H X H X L L-H Tri-State Current X L X X X X H L-H – None X H X X X X X X Tri-State Operation Read Cycle (Begin Burst) Read Cycle (Continue Burst) NOP/Dummy Read (Begin Burst) Dummy Read (Continue Burst) Write Cycle (Begin Burst) Ignore Clock Edge (Stall) Sleep Mode Notes 1. X = “Don't Care”, H = Logic HIGH, L = Logic LOW, CE stands for ALL Chip Enables active. BWx = L signifies at least one Byte Write Select is active, BWx = Valid signifies that the desired Byte Write Selects are asserted, see “Partial Write Cycle Description” on page 11 for details. 2. Write is defined by WE and BW[a:d]. See “Partial Write Cycle Description” on page 11 for details. 3. When a write cycle is detected, all IOs are tri-stated, even during Byte Writes. 4. The DQ and DQP pins are controlled by the current cycle and the OE signal. 5. CEN = H inserts wait states. 6. Device powers up deselected with the IOs in a tri-state condition, regardless of OE. 7. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles.During a Read cycle DQs and DQP[a:d] = tri-state when OE is inactive or when the device is deselected, and DQs = data when OE is active. Document #: 001-15032 Rev. *D Page 10 of 29 [+] Feedback CY7C1470BV25 CY7C1472BV25, CY7C1474BV25 Table 5. Partial Write Cycle Description The partial write cycle description for CY7C1470BV25, CY7C1472BV25, and CY7C1474BV25 follows.[1, 2, 3, 8] Function (CY7C1470BV25) WE BWd BWc BWb BWa Read H X X X X Write – No bytes written L H H H H Write Byte a – (DQa and DQPa) L H H H L Write Byte b – (DQb and DQPb) L H H L H Write Bytes b, a L H H L L Write Byte c – (DQc and DQPc) L H L H H Write Bytes c, a L H L H L Write Bytes c, b L H LL L H Write Bytes c, b, a L H L L L Write Byte d – (DQd and DQPd) L L H H H Write Bytes d, a L L H H L Write Bytes d, b L L H L H Write Bytes d, b, a L L H L L Write Bytes d, c L L L H H Write Bytes d, c, a L L L H L Write Bytes d, c, b L L L L H Write All Bytes L L L L L Function (CY7C1472BV25) WE BWb BWa Read H x x Write – No Bytes Written L H H Write Byte a – (DQa and DQPa) L H L Write Byte b – (DQb and DQPb) L L H Write Both Bytes L L L WE BWx Read H x Write – No Bytes Written L H Write Byte X − (DQx and DQPx) L L Write All Bytes L All BW = L Function (CY7C1474BV25) Note 8. Table lists only a partial listing of the Byte Write combinations. Any combination of BW[a:d] is valid. Appropriate write is based on which Byte Write is active. Document #: 001-15032 Rev. *D Page 11 of 29 [+] Feedback CY7C1470BV25 CY7C1472BV25, CY7C1474BV25 IEEE 1149.1 Serial Boundary Scan (JTAG) The CY7C1470BV25, CY7C1472BV25, and CY7C1474BV25 incorporates a serial boundary scan test access port (TAP). This port operates in accordance with IEEE Standard 1149.1-1990 but does not have the set of functions required for full 1149.1 compliance. These functions from the IEEE specification are excluded because their inclusion places an added delay in the critical speed path of the SRAM. Note that the TAP controller functions in a manner that does not conflict with the operation of other devices using 1149.1 fully compliant TAPs. The TAP operates using JEDEC-standard 2.5V IO logic levels. The CY7C1470BV25, CY7C1472BV25, and CY7C1474BV25 contains a TAP controller, instruction register, boundary scan register, bypass register, and ID register. Disabling the JTAG Feature It is possible to operate the SRAM without using the JTAG feature. To disable the TAP controller, TCK must be tied LOW (VSS) to prevent clocking of the device. TDI and TMS are internally pulled up and may be unconnected. They may alternately be connected to VDD through a pull up resistor. TDO must be left unconnected. During power up, the device comes up in a reset state, which does not interfere with the operation of the device. Test MODE SELECT (TMS) The TMS input is used to give commands to the TAP controller and is sampled on the rising edge of TCK. It is allowable to leave this ball unconnected if the TAP is not used. The ball is pulled up internally, resulting in a logic HIGH level. Test Data-In (TDI) The TDI ball is used to serially input information into the registers and can be connected to the input of any of the registers. The register between TDI and TDO is chosen by the instruction that is loaded into the TAP instruction register. For information about loading the instruction register, see the TAP Controller State Diagram. TDI is internally pulled up and can be unconnected if the TAP is unused in an application. TDI is connected to the most significant bit (MSB) of any register. (See TAP Controller Block Diagram.) Test Data-Out (TDO) The TDO output ball is used to serially clock data-out from the registers. The output is active depending upon the current state of the TAP state machine. The output changes on the falling edge of TCK. TDO is connected to the least significant bit (LSB) of any register. (See TAP Controller State Diagram.) Figure 3. TAP Controller Block Diagram Figure 2. TAP Controller State Diagram 1 0 TEST-LOGIC RESET Bypass Register 0 0 RUN-TEST/ IDLE 1 SELECT DR-SCA N 1 SELECT IR-SCAN 0 1 1 0 EXIT1-DR Boundary Scan Register EXIT1-IR 0 TDO x . . . . . 2 1 0 0 1 1 Selection Circuitry Identification Register SHIFT-IR 1 Instruction Register 31 30 29 . . . 2 1 0 0 SHIFT-DR 1 0 PAUSE-DR 0 PAUSE-IR 1 0 0 TCK TM S 1 EXIT2-DR TAP CONTROLLER EXIT2-IR 1 1 UPDATE-DR 1 Selection Circuitry CAPTURE-IR 0 0 TDI 0 CAPTURE-DR 2 1 0 1 0 UPDATE-IR 1 0 The 0/1 next to each state represents the value of TMS at the rising edge of TCK. Test Access Port (TAP) Test Clock (TCK) The test clock is used only with the TAP controller. All inputs are captured on the rising edge of TCK. All outputs are driven from the falling edge of TCK. Document #: 001-15032 Rev. *D Performing a TAP Reset A RESET is performed by forcing TMS HIGH (VDD) for five rising edges of TCK. This RESET does not affect the operation of the SRAM and may be performed while the SRAM is operating. During power up, the TAP is reset internally to ensure that TDO comes up in a High-Z state. TAP Registers Registers are connected between the TDI and TDO balls to scan the data in and out of the SRAM test circuitry. Only one register can be selected at a time through the instruction register. Data is serially loaded into the TDI ball on the rising edge of TCK. Data is output on the TDO ball on the falling edge of TCK. Page 12 of 29 [+] Feedback CY7C1470BV25 CY7C1472BV25, CY7C1474BV25 Instruction Register Three-bit instructions can be serially loaded into the instruction register. This register is loaded when it is placed between the TDI and TDO balls as shown in the “TAP Controller Block Diagram” on page 12. During power up, the instruction register is loaded with the IDCODE instruction. It is also loaded with the IDCODE instruction if the controller is placed in a reset state as described in the previous section. When the TAP controller is in the Capture-IR state, the two least significant bits are loaded with a binary ‘01’ pattern to enable fault isolation of the board-level serial test data path. Bypass Register Instructions are loaded into the TAP controller during the Shift-IR state when the instruction register is placed between TDI and TDO. During this state, instructions are shifted through the instruction register through the TDI and TDO balls. To execute the instruction after it is shifted in, the TAP controller must be moved into the Update-IR state. EXTEST EXTEST is a mandatory 1149.1 instruction which is executed whenever the instruction register is loaded with all 0s. EXTEST is not implemented in this SRAM TAP controller, and therefore this device is not compliant to 1149.1. The TAP controller does recognize an all-0 instruction. To save time when serially shifting data through registers, it is sometimes advantageous to skip certain chips. The bypass register is a single-bit register that can be placed between the TDI and TDO balls. This shifts the data through the SRAM with minimal delay. The bypass register is set LOW (VSS) when the BYPASS instruction is executed. When an EXTEST instruction is loaded into the instruction register, the SRAM responds as if a SAMPLE/PRELOAD instruction has been loaded. There is one difference between the two instructions. Unlike the SAMPLE/PRELOAD instruction, EXTEST places the SRAM outputs in a High-Z state. Boundary Scan Register The IDCODE instruction loads a vendor-specific, 32-bit code into the instruction register. It also places the instruction register between the TDI and TDO balls and shifts the IDCODE out of the device when the TAP controller enters the Shift-DR state. The boundary scan register is connected to all the input and bidirectional balls on the SRAM. The boundary scan register is loaded with the contents of the RAM IO ring when the TAP controller is in the Capture-DR state and is then placed between the TDI and TDO balls when the controller is moved to the Shift-DR state. The EXTEST, SAMPLE/PRELOAD and SAMPLE Z instructions can be used to capture the contents of the IO ring. The Boundary Scan Order tables on page 17 show the order in which the bits are connected. Each bit corresponds to one of the bumps on the SRAM package. The MSB of the register is connected to TDI and the LSB is connected to TDO. Identification (ID) Register The ID register is loaded with a vendor-specific, 32-bit code during the Capture-DR state when the IDCODE command is loaded in the instruction register. The IDCODE is hardwired into the SRAM and can be shifted out when the TAP controller is in the Shift-DR state. The ID register has a vendor code and other information described in “Identification Register Definitions” on page 16. TAP Instruction Set Overview Eight different instructions are possible with the three-bit instruction register. All combinations are listed in “Identification Codes” on page 17. Three of these instructions are listed as RESERVED and must not be used. The other five instructions are described in this section in detail. The TAP controller used in this SRAM is not fully compliant to the 1149.1 convention because some of the mandatory 1149.1 instructions are not fully implemented. The TAP controller cannot be used to load address data or control signals into the SRAM and cannot preload the IO buffers. The SRAM does not implement the 1149.1 commands EXTEST or INTEST or the PRELOAD portion of SAMPLE/PRELOAD; rather, it performs a capture of the IO ring when these instructions are executed. Document #: 001-15032 Rev. *D IDCODE The IDCODE instruction is loaded into the instruction register during power up or whenever the TAP controller is in a test logic reset state. SAMPLE Z The SAMPLE Z instruction connects the boundary scan register between the TDI and TDO pins when the TAP controller is in a Shift-DR state. It also places all SRAM outputs into a High-Z state. SAMPLE/PRELOAD SAMPLE/PRELOAD is a 1149.1 mandatory instruction. The PRELOAD portion of this instruction is not implemented, so the device TAP controller is not fully 1149.1 compliant. When the SAMPLE/PRELOAD instruction is loaded into the instruction register and the TAP controller is in the Capture-DR state, a snapshot of data on the inputs and bidirectional balls is captured in the boundary scan register. The user must be aware that the TAP controller clock can only operate at a frequency up to 20 MHz, while the SRAM clock operates more than an order of magnitude faster. Because there is a large difference in the clock frequencies, it is possible that during the Capture-DR state, an input or output may undergo a transition. The TAP may then try to capture a signal while in transition (metastable state). This does not harm the device, but there is no guarantee as to the value that is captured. Repeatable results may not be possible. To guarantee that the boundary scan register captures the correct value of a signal, the SRAM signal must be stabilized long enough to meet the TAP controller’s capture setup plus hold time (tCS plus tCH). The SRAM clock input might not be captured correctly if there is no way in a design to stop (or slow) the clock during a SAMPLE/PRELOAD instruction. If this is an issue, it is still Page 13 of 29 [+] Feedback CY7C1470BV25 CY7C1472BV25, CY7C1474BV25 possible to capture all other signals and simply ignore the value of the CLK captured in the boundary scan register. BYPASS When the BYPASS instruction is loaded in the instruction register and the TAP is placed in a Shift-DR state, the bypass register is placed between the TDI and TDO balls. The advantage of the BYPASS instruction is that it shortens the boundary scan path when multiple devices are connected together on a board. After the data is captured, it is possible to shift out the data by putting the TAP into the Shift-DR state. This places the boundary scan register between the TDI and TDO balls. Note that since the PRELOAD part of the command is not implemented, putting the TAP to the Update-DR state while performing a SAMPLE/PRELOAD instruction has the same effect as the Pause-DR command. Reserved These instructions are not implemented but are reserved for future use. Do not use these instructions. Figure 4. TAP Timing 1 2 Test Clock (TCK ) 3 t TH t TM SS t TM SH t TDIS t TDIH t TL 4 5 6 t CY C Test M ode Select (TM S) Test Data-In (TDI) t TDOV t TDOX Test Data-Out (TDO) DON’T CA RE Document #: 001-15032 Rev. *D UNDEFINED Page 14 of 29 [+] Feedback CY7C1470BV25 CY7C1472BV25, CY7C1474BV25 TAP AC Switching Characteristics Over the Operating Range [9, 10] Parameter Description Min Max Unit Clock tTCYC TCK Clock Cycle Time tTF TCK Clock Frequency tTH TCK Clock HIGH time 20 ns tTL TCK Clock LOW time 20 ns 50 ns 20 MHz Output Times tTDOV TCK Clock LOW to TDO Valid tTDOX TCK Clock LOW to TDO Invalid 0 ns tTMSS TMS Setup to TCK Clock Rise 5 ns tTDIS TDI Setup to TCK Clock Rise 5 ns tCS Capture Setup to TCK Rise 5 ns tTMSH TMS Hold after TCK Clock Rise 5 ns tTDIH TDI Hold after Clock Rise 5 ns tCH Capture Hold after Clock Rise 5 ns 10 ns Setup Times Hold Times Notes 9. tCS and tCH refer to the setup and hold time requirements of latching data from the boundary scan register. 10. Test conditions are specified using the load in TAP AC Test Conditions. tR/tF = 1 ns. Document #: 001-15032 Rev. *D Page 15 of 29 [+] Feedback CY7C1470BV25 CY7C1472BV25, CY7C1474BV25 2.5V TAP AC Test Conditions Figure 5. 2.5V TAP AC Output Load Equivalent 1.25V Input pulse levels................................................. VSS to 2.5V Input rise and fall time .....................................................1 ns 50Ω Input timing reference levels......................................... 1.25V Output reference levels ................................................ 1.25V TDO Test load termination supply voltage ............................ 1.25V Z O= 50Ω 20pF TAP DC Electrical Characteristics And Operating Conditions (0°C < TA < +70°C; VDD = 2.5V ±0.125V unless otherwise noted)[11] Parameter Description Test Conditions VOH1 Output HIGH Voltage VOH2 VOL1 Min IOH = –1.0 mA, VDDQ = 2.5V 1.7 Output HIGH Voltage IOH = –100 μA, VDDQ = 2.5V 2.1 Output LOW Voltage IOL = 1.0 mA, VDDQ = 2.5V Max Unit V V 0.4 V VOL2 Output LOW Voltage IOL = 100 μA, VDDQ = 2.5V 0.2 V VIH Input HIGH Voltage VDDQ = 2.5V 1.7 VDD + 0.3 V VIL Input LOW Voltage VDDQ = 2.5V –0.3 0.7 V IX Input Load Current GND ≤ VI ≤ VDDQ –5 5 μA Table 6. Identification Register Definitions Instruction Field Revision Number (31:29) Device Depth (28:24) CY7C1470BV25 (2M x 36) CY7C1472BV25 (4M x 18) CY7C1474BV25 (1M x 72) 000 000 000 Description Describes the version number 01011 01011 01011 Architecture/Memory Type(23:18) 001000 001000 001000 Defines memory type and architecture Bus Width/Density(17:12) 100100 010100 110100 Defines width and density 00000110100 00000110100 00000110100 1 1 1 Cypress JEDEC ID Code (11:1) ID Register Presence Indicator (0) Reserved for internal use Allows unique identification of SRAM vendor Indicates the presence of an ID register Table 7. Scan Register Sizes Register Name Bit Size (x36) Bit Size (x18) Bit Size (x72) Instruction 3 3 3 Bypass 1 1 1 ID 32 32 32 Boundary Scan Order–165FBGA 71 52 – Boundary Scan Order–209BGA – – 110 Note 11. All voltages refer to VSS (GND). Document #: 001-15032 Rev. *D Page 16 of 29 [+] Feedback CY7C1470BV25 CY7C1472BV25, CY7C1474BV25 Table 8. Identification Codes Instruction Code Description EXTEST 000 Captures IO ring contents. Places the boundary scan register between TDI and TDO. Forces all SRAM outputs to High-Z state. This instruction is not 1149.1-compliant. IDCODE 001 Loads the ID register with the vendor ID code and places the register between TDI and TDO. This operation does not affect SRAM operations. SAMPLE Z 010 Captures IO ring contents. Places the boundary scan register between TDI and TDO. Forces all SRAM output drivers to a High-Z state. RESERVED 011 Do Not Use: This instruction is reserved for future use. SAMPLE/PRELOAD 100 Captures IO ring contents. Places the boundary scan register between TDI and TDO. Does not affect SRAM operation. This instruction does not implement 1149.1 preload function and is therefore not 1149.1-compliant. RESERVED 101 Do Not Use: This instruction is reserved for future use. RESERVED 110 Do Not Use: This instruction is reserved for future use. BYPASS 111 Places the bypass register between TDI and TDO. This operation does not affect SRAM operations. Table 9. Boundary Scan Exit Order (2M x 36) Bit # 165-Ball ID Bit # 165-Ball ID Bit # 165-Ball ID Bit # 165-Ball ID 1 C1 21 R3 41 J11 61 B7 2 D1 22 P2 42 K10 62 B6 3 E1 23 R4 43 J10 63 A6 4 D2 24 P6 44 H11 64 B5 5 E2 25 R6 45 G11 65 A5 6 F1 26 R8 46 F11 66 A4 7 G1 27 P3 47 E11 67 B4 8 F2 28 P4 48 D10 68 B3 9 G2 29 P8 49 D11 69 A3 10 J1 30 P9 50 C11 70 A2 71 B2 11 K1 31 P10 51 G10 12 L1 32 R9 52 F10 13 J2 33 R10 53 E10 14 M1 34 R11 54 A9 15 N1 35 N11 55 B9 16 K2 36 M11 56 A10 17 L2 37 L11 57 B10 18 M2 38 M10 58 A8 19 R1 39 L10 59 B8 20 R2 40 K11 60 A7 Document #: 001-15032 Rev. *D Page 17 of 29 [+] Feedback CY7C1470BV25 CY7C1472BV25, CY7C1474BV25 Boundary Scan Exit Order (4M x 18) Bit # 165-Ball ID Bit # 165-Ball ID Bit # 165-Ball ID Bit # 165-Ball ID 1 D2 14 R4 2 E2 15 P6 27 L10 40 B10 28 K10 41 A8 3 F2 16 R6 29 J10 42 B8 4 G2 17 R8 30 H11 43 A7 5 J1 18 P3 31 G11 44 B7 6 K1 19 P4 32 F11 45 B6 7 L1 20 P8 33 E11 46 A6 8 M1 21 P9 34 D11 47 B5 9 N1 22 P10 35 C11 48 A4 10 R1 23 R9 36 A11 49 B3 11 R2 24 R10 37 A9 50 A3 12 R3 25 R11 38 B9 51 A2 13 P2 26 M10 39 A10 52 B2 Boundary Scan Exit Order (1M x 72) Bit # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 209-Ball ID A1 A2 B1 B2 C1 C2 D1 D2 E1 E2 F1 F2 G1 G2 H1 H2 J1 J2 L1 L2 M1 M2 Bit # 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 209-Ball ID T1 T2 U1 U2 V1 V2 W1 W2 T6 V3 V4 U4 W5 V6 W6 V5 U5 U6 W7 V7 U7 V8 Bit # 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 209-Ball ID U10 T11 T10 R11 R10 P11 P10 N11 N10 M11 M10 L11 L10 P6 J11 J10 H11 H10 G11 G10 F11 F10 Bit # 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 209-Ball ID B11 B10 A11 A10 A7 A5 A9 U8 A6 D6 K6 B6 K3 A8 B4 B3 C3 C4 C8 C9 B9 B8 23 24 25 26 27 28 N1 N2 P1 P2 R2 R1 51 52 53 54 55 56 V9 W11 W10 V11 V10 U11 79 80 81 82 83 84 E10 E11 D11 D10 C11 C10 107 108 109 110 A4 C6 B7 A3 Document #: 001-15032 Rev. *D Page 18 of 29 [+] Feedback CY7C1470BV25 CY7C1472BV25, CY7C1474BV25 Maximum Ratings Current into Outputs (LOW) ........................................ 20 mA Exceeding maximum ratings may impair the useful life of the device. These user guidelines are not tested. Storage Temperature ................................. –65°C to +150°C Static Discharge Voltage.......................................... > 2001V (MIL-STD-883, Method 3015) Latch up Current.................................................... > 200 mA Operating Range Ambient Temperature with Power Applied ............................................ –55°C to +125°C Supply Voltage on VDD Relative to GND ........–0.5V to +3.6V Range Ambient Temperature VDD VDDQ Supply Voltage on VDDQ Relative to GND.......–0.5V to +VDD Commercial 0°C to +70°C 2.5V –5%/+5% DC to Outputs in Tri-State.................... –0.5V to VDDQ + 0.5V Industrial 2.5V–5% to VDD –40°C to +85°C DC Input Voltage ................................... –0.5V to VDD + 0.5V Electrical Characteristics Over the Operating Range[12, 13] Parameter Description Test Conditions Min Max Unit 2.375 2.625 V 2.375 VDD V VDD Power Supply Voltage VDDQ IO Supply Voltage For 2.5V IO VOH Output HIGH Voltage For 2.5V IO, IOH= −1.0 mA VOL Output LOW Voltage For 2.5V IO, IOL= 1.0 mA 0.4 V VIH Input HIGH Voltage[12] For 2.5V IO 1.7 VDD + 0.3V V VIL Input LOW Voltage[12] For 2.5V IO –0.3 0.7 V IX Input Leakage Current except ZZ and MODE GND ≤ VI ≤ VDDQ –5 5 μA Input Current of MODE Input = VSS –30 2.0 Input = VDD Input Current of ZZ Input = VSS IDD ISB1 ISB2 VDD Operating Supply Automatic CE Power Down Current—TTL Inputs Automatic CE Power Down Current—CMOS Inputs VDD = Max, IOUT = 0 mA, f = fMAX = 1/tCYC μA μA –5 30 μA 5 μA 4.0-ns cycle, 250 MHz 450 mA 5.0-ns cycle, 200 MHz 450 mA Input = VDD [14] μA 5 Output Leakage Current GND ≤ VI ≤ VDDQ, Output Disabled IOZ V –5 6.0-ns cycle, 167 MHz 400 mA Max. VDD, Device Deselected, 4.0-ns cycle, 250MHz VIN ≥ VIH or VIN ≤ VIL, 5.0-ns cycle, 200 MHz f = fMAX = 1/tCYC 6.0-ns cycle, 167 MHz 200 mA 200 mA 200 mA Max. VDD, Device Deselected, All speed grades VIN ≤ 0.3V or VIN > VDDQ − 0.3V, f = 0 120 mA Notes 12. Overshoot: VIH(AC) < VDD +1.5V (pulse width less than tCYC/2). Undershoot: VIL(AC)> –2V (pulse width less than tCYC/2). 13. TPower-up: assumes a linear ramp from 0V to VDD (min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD. 14. The operation current is calculated with 50% read cycle and 50% write cycle. Document #: 001-15032 Rev. *D Page 19 of 29 [+] Feedback CY7C1470BV25 CY7C1472BV25, CY7C1474BV25 Electrical Characteristics Over the Operating Range[12, 13] (continued) Parameter ISB3 Description Automatic CE Power Down Current—CMOS Inputs ISB4 Automatic CE Power Down Current—TTL Inputs Max Unit Max. VDD, Device Deselected, 4.0-ns cycle, 250 MHz VIN ≤ 0.3V or 5.0-ns cycle, 200 MHz VIN > VDDQ − 0.3V, f = fMAX = 1/tCYC 6.0-ns cycle, 167 MHz Test Conditions Min 200 mA 200 mA 200 mA Max. VDD, Device Deselected, All speed grades VIN ≥ VIH or VIN ≤ VIL, f = 0 135 mA Capacitance Tested initially and after any design or process changes that may affect these parameters. Parameter Test Conditions 100 TQFP Max TA = 25°C, f = 1 MHz, VDD = 2.5V VDDQ = 2.5V 6 6 6 pF 5 5 5 pF 8 8 8 pF Description 165 FBGA 209 FBGA Max Max Unit CADDRESS Address Input Capacitance CDATA Data Input Capacitance CCTRL Control Input Capacitance CCLK Clock Input Capacitance 6 6 6 pF CIO Input/Output Capacitance 5 5 5 pF Thermal Resistance Tested initially and after any design or process changes that may affect these parameters. Parameter ΘJA ΘJC Description Test Conditions Thermal Resistance Test conditions follow standard test (Junction to Ambient) methods and procedures for Thermal Resistance measuring thermal impedance, per EIA/JESD51. (Junction to Case) 100 TQFP Package 165 FBGA Package 209 FBGA Package Unit 24.63 16.3 15.2 °C/W 2.28 2.1 1.7 °C/W AC Test Loads and Waveforms 2.5V IO Test Load R = 1667Ω 2.5V OUTPUT Z0 = 50Ω 10% R = 1538Ω VL = 1.25V Document #: 001-15032 Rev. *D INCLUDING JIG AND SCOPE 90% 10% 90% GND 5 pF (a) ALL INPUT PULSES VDDQ OUTPUT RL = 50Ω (b) ≤ 1 ns ≤ 1 ns (c) Page 20 of 29 [+] Feedback CY7C1470BV25 CY7C1472BV25, CY7C1474BV25 Switching Characteristics Over the Operating Range. Timing reference is 1.25V when VDDQ = 2.5V. Test conditions shown in (a) of “AC Test Loads and Waveforms” on page 20 unless otherwise noted. Parameter tPower[15] Description VCC (typical) to the First Access Read or Write –250 Min –200 Max Min –167 Max Min Max Unit 1 1 1 ms 4.0 5.0 6.0 ns Clock tCYC Clock Cycle Time FMAX Maximum Operating Frequency tCH Clock HIGH 2.0 2.0 2.2 ns tCL Clock LOW 2.0 2.0 2.2 ns 250 200 167 MHz Output Times tCO Data Output Valid After CLK Rise 3.0 3.0 3.4 ns tOEV OE LOW to Output Valid 3.0 3.0 3.4 ns tDOH Data Output Hold After CLK Rise tCHZ Clock to High-Z[16, 17, 18] tCLZ Low-Z[16, 17, 18] tEOHZ tEOLZ Clock to OE HIGH to Output High-Z[16, 17, 18] OE LOW to Output Low-Z[16, 17, 18] 1.3 1.3 3.0 1.3 1.5 3.0 1.3 3.0 ns 3.4 1.5 3.0 ns ns 3.4 ns 0 0 0 ns Setup Times tAS Address Setup Before CLK Rise 1.4 1.4 1.5 ns tDS Data Input Setup Before CLK Rise 1.4 1.4 1.5 ns tCENS CEN Setup Before CLK Rise 1.4 1.4 1.5 ns tWES WE, BWx Setup Before CLK Rise 1.4 1.4 1.5 ns tALS ADV/LD Setup Before CLK Rise 1.4 1.4 1.5 ns tCES Chip Select Setup 1.4 1.4 1.5 ns tAH Address Hold After CLK Rise 0.4 0.4 0.5 ns tDH Data Input Hold After CLK Rise 0.4 0.4 0.5 ns tCENH CEN Hold After CLK Rise 0.4 0.4 0.5 ns tWEH WE, BWx Hold After CLK Rise 0.4 0.4 0.5 ns tALH ADV/LD Hold after CLK Rise 0.4 0.4 0.5 ns tCEH Chip Select Hold After CLK Rise 0.4 0.4 0.5 ns Hold Times Notes 15. This part has a voltage regulator internally; tpower is the time power is supplied above VDD minimum initially, before a read or write operation can be initiated. 16. tCHZ, tCLZ, tEOLZ, and tEOHZ are specified with AC test conditions shown in (b) of “AC Test Loads and Waveforms” on page 20. Transition is measured ±200 mV from steady-state voltage. 17. At any supplied voltage and temperature, tEOHZ is less than tEOLZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed to achieve High-Z before Low-Z under the same system conditions. 18. This parameter is sampled and not 100% tested. Document #: 001-15032 Rev. *D Page 21 of 29 [+] Feedback CY7C1470BV25 CY7C1472BV25, CY7C1474BV25 Switching Waveforms Figure 6 shows read-write timing waveform.[19, 20, 21] Figure 6. Read/Write Timing 1 2 3 t CYC 4 5 6 A3 A4 7 8 9 A5 A6 10 CLK t CENS t CENH t CES t CEH t CH t CL CEN CE ADV/LD WE BW x A1 ADDRESS A2 A7 t CO t AS t DS t AH Data t DH D(A1) t CLZ D(A2) D(A2+1) t DOH Q(A3) t OEV Q(A4) t CHZ Q(A4+1) D(A5) Q(A6) In-Out (DQ) t OEHZ t DOH t OELZ OE WRITE D(A1) WRITE D(A2) BURST WRITE D(A2+1) READ Q(A3) DON’T CARE READ Q(A4) BURST READ Q(A4+1) WRITE D(A5) READ Q(A6) WRITE D(A7) DESELECT UNDEFINED Notes 19. For this waveform ZZ is tied LOW. 20. When CE is LOW, CE1 is LOW, CE2 is HIGH, and CE3 is LOW. When CE is HIGH,CE1 is HIGH, CE2 is LOW, or CE3 is HIGH. 21. Order of the Burst sequence is determined by the status of the MODE (0 = Linear, 1 = Interleaved).Burst operations are optional. Document #: 001-15032 Rev. *D Page 22 of 29 [+] Feedback CY7C1470BV25 CY7C1472BV25, CY7C1474BV25 Switching Waveforms (continued) [19, 20, 22] Figure 7 shows NOP, STALL and DESELECT Cycles waveform. Figure 7. NOP, STALL and DESELECT Cycles 1 2 A1 A2 3 4 5 A3 A4 6 7 8 9 10 CLK CEN CE ADV/LD WE BWx ADDRESS A5 t CHZ D(A1) Data Q(A2) D(A4) Q(A3) Q(A5) In-Out (DQ) WRITE D(A1) READ Q(A2) STALL READ Q(A3) WRITE D(A4) STALL DON’T CARE Figure 8 shows ZZ Mode timing waveform. NOP READ Q(A5) DESELECT CONTINUE DESELECT UNDEFINED [23, 24] Figure 8. ZZ Mode Timing CLK t ZZ I t t ZZ ZZREC ZZI SUPPLY I t RZZI DDZZ A LL INPUTS (except ZZ) Outputs (Q) DESELECT or READ Only High-Z DON’T CARE Notes 22. The IGNORE CLOCK EDGE or STALL cycle (Clock 3) illustrated CEN being used to create a pause. A write is not performed during this cycle. 23. Device must be deselected when entering ZZ mode. See “Truth Table” on page 10 for all possible signal conditions to deselect the device. 24. IOs are in High-Z when exiting ZZ sleep mode. Document #: 001-15032 Rev. *D Page 23 of 29 [+] Feedback CY7C1470BV25 CY7C1472BV25, CY7C1474BV25 Ordering Information Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or visit www.cypress.com for actual products offered. Speed (MHz) 167 Ordering Code CY7C1470BV25-167AXC Package Diagram Part and Package Type 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Pb-Free Operating Range Commercial CY7C1472BV25-167AXC CY7C1470BV25-167BZC 51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm) CY7C1472BV25-167BZC CY7C1470BV25-167BZXC 51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free CY7C1472BV25-167BZXC CY7C1474BV25-167BGC CY7C1474BV25-167BGXC CY7C1470BV25-167AXI 51-85167 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) Pb-Free 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Pb-Free lndustrial CY7C1472BV25-167AXI CY7C1470BV25-167BZI 51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm) CY7C1472BV25-167BZI CY7C1470BV25-167BZXI 51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free CY7C1472BV25-167BZXI CY7C1474BV25-167BGI CY7C1474BV25-167BGXI 200 CY7C1470BV25-200AXC 51-85167 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) Pb-Free 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Pb-Free Commercial CY7C1472BV25-200AXC CY7C1470BV25-200BZC 51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm) CY7C1472BV25-200BZC CY7C1470BV25-200BZXC 51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free CY7C1472BV25-200BZXC CY7C1474BV25-200BGC CY7C1474BV25-200BGXC CY7C1470BV25-200AXI 51-85167 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) Pb-Free 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Pb-Free lndustrial CY7C1472BV25-200AXI CY7C1470BV25-200BZI 51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm) CY7C1472BV25-200BZI CY7C1470BV25-200BZXI 51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free CY7C1472BV25-200BZXI CY7C1474BV25-200BGI CY7C1474BV25-200BGXI Document #: 001-15032 Rev. *D 51-85167 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) Pb-Free Page 24 of 29 [+] Feedback CY7C1470BV25 CY7C1472BV25, CY7C1474BV25 Ordering Information (continued) Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or visit www.cypress.com for actual products offered. Speed (MHz) 250 Ordering Code CY7C1470BV25-250AXC Package Diagram Part and Package Type 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Pb-Free Operating Range Commercial CY7C1472BV25-250AXC CY7C1470BV25-250BZC 51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm) CY7C1472BV25-250BZC CY7C1470BV25-250BZXC 51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free CY7C1472BV25-250BZXC CY7C1474BV25-250BGC CY7C1474BV25-250BGXC CY7C1470BV25-250AXI 51-85167 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) Pb-Free 51-85050 100-Pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Pb-Free Industrial CY7C1472BV25-250AXI CY7C1470BV25-250BZI 51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm) CY7C1472BV25-250BZI CY7C1470BV25-250BZXI 51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free CY7C1472BV25-250BZXI CY7C1474BV25-250BGI CY7C1474BV25-250BGXI Document #: 001-15032 Rev. *D 51-85167 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) Pb-Free Page 25 of 29 [+] Feedback CY7C1470BV25 CY7C1472BV25, CY7C1474BV25 Package Diagrams Figure 9. 100-Pin Thin Plastic Quad Flatpack (14 x 20 x 1.4 mm), 51-85050 16.00±0.20 1.40±0.05 14.00±0.10 100 81 80 1 20.00±0.10 22.00±0.20 0.30±0.08 0.65 TYP. 30 12°±1° (8X) SEE DETAIL A 51 31 50 0.20 MAX. 0.10 1.60 MAX. R 0.08 MIN. 0.20 MAX. 0° MIN. SEATING PLANE STAND-OFF 0.05 MIN. 0.15 MAX. 0.25 NOTE: 1. JEDEC STD REF MS-026 GAUGE PLANE 0°-7° R 0.08 MIN. 0.20 MAX. 2. BODY LENGTH DIMENSION DOES NOT INCLUDE MOLD PROTRUSION/END FLASH MOLD PROTRUSION/END FLASH SHALL NOT EXCEED 0.0098 in (0.25 mm) PER SIDE BODY LENGTH DIMENSIONS ARE MAX PLASTIC BODY SIZE INCLUDING MOLD MISMATCH 3. DIMENSIONS IN MILLIMETERS 0.60±0.15 0.20 MIN. 1.00 REF. DETAIL Document #: 001-15032 Rev. *D A 51-85050-*B Page 26 of 29 [+] Feedback CY7C1470BV25 CY7C1472BV25, CY7C1474BV25 Package Diagrams (continued) Figure 10. 165-Ball FBGA (15 x 17 x 1.4 mm), 51-85165 PIN 1 CORNER BOTTOM VIEW TOP VIEW Ø0.05 M C PIN 1 CORNER Ø0.25 M C A B Ø0.45±0.05(165X) 1 2 3 4 5 6 7 8 9 10 11 11 10 9 8 7 6 5 4 3 2 1 A B B C C 1.00 A D D F F G G H J 14.00 E 17.00±0.10 E H J K L L 7.00 K M M N N P P R R A 1.00 5.00 0.35 0.15 C +0.05 -0.10 0.53±0.05 0.25 C 10.00 B 15.00±0.10 0.15(4X) SEATING PLANE Document #: 001-15032 Rev. *D 1.40 MAX. 0.36 C 51-85165-*A Page 27 of 29 [+] Feedback CY7C1470BV25 CY7C1472BV25, CY7C1474BV25 Package Diagrams (continued) Figure 11. 209-Ball FBGA (14 x 22 x 1.76 mm), 51-85167 51-85167-** Document #: 001-15032 Rev. *D Page 28 of 29 [+] Feedback CY7C1470BV25 CY7C1472BV25, CY7C1474BV25 Document History Page Document Title: CY7C1470BV25/CY7C1472BV25/CY7C1474BV25, 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL™ Architecture Document Number: 001-15032 REV. ECN No. Issue Date Orig. of Change Description of Change ** 1032642 See ECN VKN/KKVTMP *A 1562503 See ECN VKN/AESA Removed 1.8V IO offering from the data sheet Added footnote 14 related to IDD *B 1897447 See ECN VKN/AESA *C 2082487 See ECN VKN *D 2159486 See ECN VKN/PYRS New data sheet Converted from preliminary to final Minor Change-Moved to the external web © Cypress Semiconductor Corporation, 2007-2008. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign), United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of, and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without the express written permission of Cypress. Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Use may be limited by and subject to the applicable Cypress software license agreement. Document #: 001-15032 Rev. *D Revised February 29, 2008 Page 29 of 29 NoBL and No Bus Latency are trademarks of Cypress Semiconductor Corporation. ZBT is a trademark of Integrated Device Technology, Inc. All products and company names mentioned in this document may be the trademarks of their respective holders. [+] Feedback