AP9963AGP-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Low On-resistance ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free BVDSS 40V RDS(ON) 4.2mΩ ID G 155A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is widely preferred for commercial-industrial power applications and suited for low voltage applications such as DC/DC converters. G TO-220(P) D S Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage +20 V ID@TC=25℃ Continuous Drain Current (Chip) ID@Tc=25℃ ID@Tc=100℃ 155 A 3 80 A 3 80 A 320 A 187 W Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V 1 IDM Pulsed Drain Current PD@Tc=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 0.8 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 62 ℃/W Data and specifications subject to change without notice 1 201010291 AP9963AGP-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 40 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=60A - - 4.2 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=10V, ID=60A - 90 - S IDSS Drain-Source Leakage Current VDS=40V, VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA ID=40A - 58 93 nC 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=32V - 12 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 26 - nC VDS=20V - 14 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=40A - 83 - ns td(off) Turn-off Delay Time RG=1Ω - 25 - ns tf Fall Time VGS=10V - 10 - ns Ciss Input Capacitance VGS=0V - 2600 4160 pF Coss Output Capacitance VDS=25V - 600 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 260 - pF Rg Gate Resistance f=1.0MHz - 1.4 2.8 Ω Min. Typ. IS=40A, VGS=0V - - 1.2 V IS=10A, VGS=0V, - 43 - ns dI/dt=100A/µs - 54 - nC Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Max. Units Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Package limitation current is 80A. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9963AGP-HF 300 200 10V 8.0V 7.0V 6.0V ID , Drain Current (A) 250 200 150 V G = 5.0V 100 T C =175 o C 160 ID , Drain Current (A) T C =25 o C 10V 8.0V 7.0V 6.0V V G =5.0V 120 80 40 50 0 0 0.0 4.0 8.0 12.0 16.0 20.0 0.0 4.0 V DS , Drain-to-Source Voltage (V) 8.0 12.0 16.0 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 1.6 I D =60A V G =10V I D =1mA Normalized RDS(ON) Normalized BVDSS (V) 1.4 1.2 1 0.8 1.4 0.8 0.6 0.4 0.2 -50 0 50 100 150 200 -50 0 o 50 100 150 200 T j , Junction Temperature ( o C) T j , Junction Temperature ( C) Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance v.s. Junction Temperature Temperature 1.6 40 Normalized VGS(th) (V) I D =1mA IS(A) 30 T j =175 o C T j =25 o C 20 1.2 0.8 0.4 10 0 0.0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 200 T j , Junction Temperature ( o C ) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9963AGP-HF f=1.0MHz 12 4000 I D =40A V DS =32V VGS , Gate to Source Voltage (V) 10 3000 C iss C (pF) 8 6 2000 4 1000 C oss C rss 2 0 0 0 20 40 60 80 1 5 9 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 1 Operation in this area limited by RDS(ON) 100us ID (A) 100 1ms 10 10ms 100ms DC T C =25 o C Single Pulse 1 Normalized Thermal Response (Rthjc) Duty factor = 0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty Factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0.1 1 10 100 0.00001 0.0001 Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 t , Pulse Width (s) V DS ,Drain-to-Source Voltage (V) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4