Pan Jit BC817-40 Npn general purpose transistor Datasheet

BC817 SERIES
NPN GENERAL PURPOSE TRANSISTORS
45 Volts
VOLTAGE
POWER
330 mWatts
• General purpose amplifier applications
0.120(3.04)
• NPN epitaxial silicon, planar design
0.110(2.80)
• Collector current IC = 500mA
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
0.006(0.15)MIN.
FEATURES
0.056(1.40)
0.047(1.20)
• Case: SOT-23, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.0003 ounce, 0.0084 gram
0.079(2.00)
0.008(0.20)
0.070(1.80)
0.003(0.08)
• Device Marking : BC817-16 : 8A
BC817-25 : 8B
0.044(1.10)
0.004(0.10)MAX.
BC817-40 : 8C
0.035(0.90)
0.020(0.50)
0.013(0.35)
MECHANICAL DATA
PARAMETER
SYMBOL
Value
UNIT
Collector-Emitter Voltage
VCEO
45
V
Collector-Base Voltage
VCBO
50
V
Emitter-Base Voltage
VEBO
5.0
V
IC
500
mA
PTOT
330
mW
TJ , TSTG
-55 to +150
oC
SYMBOL
Value
UNIT
RθJA
556
oC/W
Collector Current - Continuous
Max Power Dissipation (Note 1)
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
PARAMETER
Thermal Resistance , Junction to Ambient
Note 1 : Transistor mounted on FR-5 board 1.0x0.75x0.062 in
January 05,2011-REV.01
PAGE . 1
BC817 SERIES
ELECTRICAL CHARACTERISTICS(TJ=25oC,unless otherwise notes)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Collector-Emitter Breakdown Voltage (Ic=10mA, IB=0)
V(BR)CEO
45
-
-
V
Collector-Base Breakdown Voltage (V EB=0V, Ic=10μA
V(BR)CBO
50
-
-
V
Emitter-Base Breakdown Voltage (IE=1μA,Ic=0)
V(BR)EBO
5.0
-
-
V
IEBO
-
-
100
nA
-
100
nA
ICBO
5.0
μA
100
160
250
-
250
400
600
-
Emitter-Base Cutoff Current (V EB=5V)
Collector-Base Cutoff Current (V CB=20V,IE=0)
TJ
=150oC
BC817-16
BC817-25
BC817-40
DC Current Gain
(Ic=100mA,V CE=1V)
hFE
(Ic=500mA,V CE=1V)
40
-
-
Collector-Emitter Saturation Voltage (Ic=500mA ,IB=50mA)
V CE(SAT)
-
-
0.7
V
Base-Emitte Voltage (Ic=500mA,V CE=1.0V)
VBE(ON)
-
-
1.2
V
C CBO
-
7.0
-
pF
fT
100
-
-
MHz
Collector-Base Capacitance (V CB=10V,IE=0,f=1MHz)
Current Gain-Bandwidth Product (Ic=10mA,V CE=5V,f=100MHz)
ELECTRICAL CHARACTERISTICS CURVES
450
300
400
250
350
300
hFE
hFE
200
150
250
200
150
100
100
50
V CE = 1V
50
0
0.01
0.1
1
10
100
VCE = 1V
0
1000
0.01
0.1
Fig. 1.
1
Fig. 2.
BC817-16 Typical hFE vs. I C
100
1000
BC817-25 Typical hFE vs. I C
100
700
CIB (EB)
Capacitance, CJ (p F)
600
500
hFE
10
Colle ctor Cur r e nt , IC ( m A )
Colle ctor Cur r e nt , I C ( m A )
400
300
200
10
COB (EB)
100
VCE = 1V
0
0.01
0.1
1
1
10
100
Colle ctor Curre nt , I C ( m A )
Fig. 3
January 05,2011-REV.01
BC817-40 Typical h FE vs. I C
1000
0.1
1
10
100
Reverse Voltage, VR (V)
Fig. 4 Typical Capacitances
PAGE . 2
BC817 SERIES
MOUNTING PAD LAYOUT
SOT-23
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2011
The information presented in this document is believed to be accurate and reliable. The specifications and information herein are
subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for
any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any
license under its patent rights or rights of others.
January 05,2011-REV.01
PAGE . 3
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