TOSHIBA TC75S55FE

TC75S55F/FU/FE
TOSHIBA CMOS Linear Integrated Circuit
Silicon Monolithic
TC75S55F,TC75S55FU,TC75S55FE
Single Operational Amplifier
The TC75S55F/TC75S55FU/TC75S55FE is a CMOS singleoperation amplifier which incorporates a phase compensation
circuit. It is designed for use with a low-voltage, low-current
power supply; this differentiates this device from conventional
general-purpose bipolar op-amps.
TC75S55F
Features
•
Low-voltage operation
: VDD = ±0.9~3.5 V or 1.8~7 V
•
Low-current power supply : IDD (VDD = 3 V) = 10 μA (typ.)
•
Built-in phase-compensated op-amp, obviating the need for
any external device
•
TC75S55FU
Ultra-compact package
TC75S55FE
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Supply voltage
Differential input voltage
Input voltage
Power
dissipation
TC75S55F/FU
TC75S55FE
Symbol
Rating
Unit
VDD, VSS
7
V
DVIN
±7
V
VIN
VDD~VSS
V
PD
200
Weight
SSOP5-P-0.95 : 0.014 g (typ.)
SSOP5-P-0.65A : 0.006 g (typ.)
SON5-P-0.50
: 0.003 g (typ.)
mW
100
Operating temperature
Topr
−40~85
°C
Storage temperature
Tstg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
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TC75S55F/FU/FE
Marking (top view)
5
Pin Connection (top view)
4
VDD
OUT
5
4
SF
1
2
1
IN (+)
3
2
VSS
3
IN (−)
Electrical Characteristics
DC Characteristics (VDD = 3.0 V, VSS = GND, Ta = 25°C)
Symbol
Test
Circuit
Input offset voltage
VIO
1
Input offset current
IIO
⎯
II
Characteristics
Input bias current
Common mode input voltage
Test Condition
Min
Typ.
Max
Unit
⎯
2
10
mV
⎯
⎯
1
⎯
pA
⎯
⎯
⎯
1
⎯
pA
CMVIN
2
⎯
0.0
⎯
2.1
V
dB
RS = 10 kΩ
GV
⎯
60
70
⎯
VOH
3
RL >
= 1 MΩ
2.9
⎯
⎯
VOL
4
RL >
= 1 MΩ
⎯
⎯
0.1
Common mode input signal
Rejection Ratio
CMRR
2
VIN = 0.0~2.1 V
60
70
⎯
Supply voltage rejection ratio
Voltage gain (open loop)
Maximum output voltage
⎯
V
dB
SVRR
1
VDD = 1.8~7.0 V
60
70
⎯
dB
Supply current
IDD
5
⎯
⎯
10
20
μA
Source current
Isource
6
⎯
10
20
⎯
μA
Isink
7
⎯
100
450
⎯
μA
Min
Typ.
Max
Unit
⎯
2
10
mV
Sink current
DC Characteristics (VDD = 1.8 V, VSS = GND, Ta = 25°C)
Symbol
Test
Circuit
Input offset voltage
VIO
1
Input offset current
IIO
⎯
⎯
⎯
1
⎯
pA
II
⎯
⎯
⎯
1
⎯
pA
CMVIN
2
⎯
0.0
⎯
0.9
V
GV
⎯
⎯
dB
Characteristics
Input bias current
Common mode input voltage
Voltage gain (open loop)
Maximum output voltage
VOH
VOL
Test Condition
RS = 100 kΩ
60
70
⎯
3
RL >
= 1 MΩ
1.7
⎯
⎯
4
RL >
= 1 MΩ
⎯
⎯
0.1
V
Supply current
IDD
5
⎯
⎯
8
16
μA
Source current
Isource
6
⎯
8
16
⎯
μA
Isink
7
⎯
100
400
⎯
μA
Sink current
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AC Characteristics (VDD = 3.0 V, VSS = GND, Ta = 25°C)
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Slew rate
SR
⎯
⎯
⎯
0.08
⎯
V/μs
Unity gain cross frequency
fT
⎯
⎯
⎯
160
⎯
kHz
Characteristics
AC Characteristics (VDD = 1.8 V, VSS = GND, Ta = 25°C)
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Slew rate
SR
⎯
⎯
⎯
0.06
⎯
V/μs
Unity gain cross frequency
fT
⎯
⎯
⎯
140
⎯
kHz
Characteristics
Test Circuit
1. SVRR, VIO
•
VDD
RF
RS
SVRR
For each of the two VDD values, measure the VOUT value, as
indicated below, and calculate the value of SVRR using the
equation shown.
When VDD = 1.8 V, VDD = VDD1 and VOUT = VOUT1
When VDD = 7.0 V, VDD = VDD2 and VOUT = VOUT2
VOUT
⎛ V
1 − V OUT 2
RS
SVRR = 20 log ⎜ OUT
×
⎜ V 1− V
2
RF + RS
DD
DD
⎝
RF
RS
•
VDD/2
⎞
⎟
⎟
⎠
VIO
Measure the value of VOUT and calculate the value of VIO using
the following equation.
⎛
RS
VDD ⎞
⎟×
VIO = ⎜⎜ V OUT −
2 ⎟⎠ RF + RS
⎝
2. CMRR, CMVIN
•
VDD
RF
RS
CMRR
Measure the VOUT value, as indicated below, and calculate the
value of the CMRR using the equation shown.
When VIN = 0.0 V, VIN = VIN1 and VOUT = VOUT1
When VIN = 2.1 V, VIN = VIN2 and VOUT = VOUT2
⎛ V
1 − V OUT 2
RS
CMRR = 20 log ⎜ OUT
×
⎜
RF + RS
1 − VIN 2
V
IN
⎝
VOUT
RS
RF
VIN
⎞
⎟
⎟
⎠
VDD/2
•
CMVIN
Input range within which the CMRR specification guarantees
VOUT value (as varied by the VIN value).
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3. VOH
VDD
•
VOH
VDD
− 0.05 V
2
VIN2 =
VDD
+ 0.05 V
2
RL
VOH
VIN1 =
VIN1
VIN2
4. VOL
VDD
VOL
VIN1 =
VDD
+ 0.05 V
2
VIN2 =
VDD
− 0.05 V
2
RL
•
VOL
VIN1
VIN2
5. IDD
VDD
M
IDD
VDD/2
6. Isource
7. Isink
VDD
VDD
M
M
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TC75S55F/FU/FE
IDD – VDD
GV – f
120
VSS = GND
VIN = VDD/2
Ta = 25°C
GV (dB)
16
12
Voltage gain
Supply current IDD
(μA)
20
8
VDD = 3 V
VSS = GND
Ta = 25°C
80
40
4
0
0
1
2
3
Supply voltage
4
5
VDD
(V)
6
0
10
7
100
1k
10 k
Frequency f
100 k
1M
(Hz)
VOL – Isink
Isink – VDD
1000
2.0
VDD = 1.8 V
VSS = GND
Ta = 25°C
VOL (V)
VSS = GND
Ta = 25°C
Low-level output voltage
Sink current Isink
(μA)
800
600
400
200
0
0
1
2
3
Supply voltage
4
5
VDD
(V)
6
1.6
1.2
0.8
0.4
0
0
7
200
5
VOL (V)
VSS = GND
Ta = 25°C
2
Low-level output voltage
VOL (V)
VDD = 3.0 V
1
200
400
Sink current Isink
600
800
(μA)
VOL – Isink
VOL – Isink
Low-level output voltage
400
Sink current Isink
3
0
0
10 M
600
4
3
2
1
0
0
800
(μA)
VDD = 5.0 V
VSS = GND
Ta = 25°C
200
400
Sink current Isink
5
600
800
(μA)
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TC75S55F/FU/FE
Isource – VDD
VOH – Isource
50
2.0
40
High-level output voltage VOH
Source current Isource
(μA)
Ta = 25°C
30
20
10
0
0
1
3
2
Supply voltage
4
5
VDD
(V)
VDD = 1.8 V
VSS = GND
Ta = 25°C
(V)
VSS = GND
6
1.6
1.2
0.8
0.4
0
0
7
4
8
12
16
20
Source current Isource
24
3
2
1
0
0
28
(μA)
VDD = 5.0 V
VSS = GND
Ta = 25°C
4
8
12
20
24
28
(μA)
VOH – RL
3
VDD = 1.8 V
VDD = 3.0 V
(V)
VSS = GND
Ta = 25°C
1.2
0.8
0.4
0
10 k
16
Source current Isource
High-level output voltage VOH
(V)
High-level output voltage VOH
1.6
(μA)
4
VOH – RL
2.0
28
(V)
High-level output voltage VOH
High-level output voltage VOH
(V)
8
24
VOH – Isource
1
4
20
5
VDD = 3.0 V
VSS = GND
Ta = 25°C
2
0
0
16
Source current Isource
VOH – Isource
3
12
100 k
1M
Load resistance RL
VSS = GND
Ta = 25°C
2
1
0
10 k
10 M
(Ω)
100 k
1M
Load resistance RL
6
10 M
(Ω)
2007-11-01
TC75S55F/FU/FE
VOH – RL
VDD = 5.0 V
VSS = GND
Ta = 25°C
3
2
1
0
10 k
This data was obtained from an unmounted
standalone IC. If the IC is mounted on a
PCB, its power dissipation will be greater.
Note that, depending on the PCB’s thermal
characteristics, the curves may differ
substantially from those shown.
(mW)
4
PD – Ta
300
Power dissipation PD
High-level output voltage VOH
(V)
5
100 k
1M
Load resistance RL
200
100
0
−40
10 M
(Ω)
0
40
80
120
Ambient temperature Ta (°C)
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TC75S55F/FU/FE
Package Dimensions
Weight: 0.014 g (typ.)
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Package Dimensions
Weight: 0.006 g (typ.)
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TC75S55F/FU/FE
Package Dimensions
Weight: 0.003 g (typ.)
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TC75S55F/FU/FE
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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