DMTH4011SPDQ 40V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits BVDSS RDS(ON) max 40V 15mΩ @ VGS = 10V ID max TC = +25°C 42A Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Rated to +175°C – Ideal for High Ambient Temperature Environments 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application High Conversion Efficiency Low RDS(ON) – Minimizes On State Losses Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Mechanical Data Backlighting Power Management Functions DC-DC Converters ® Case: PowerDI 5060-8 (Type C) Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) S1 D1 G1 D1 S2 D2 G2 D2 D2 D1 G2 G1 S2 S1 Pin1 Top View Pin Out Top View Bottom View Equivalent Circuit Ordering Information (Note 5) Part Number DMTH4011SPDQ-13 Notes: Case PowerDI5060-8 (Type C) Packaging 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to https://www.diodes.com/quality/. 5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information D1 D1 D2 D2 = Manufacturer’s Marking TH4011SD = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 18 = 2018) WW = Week (01 to 53) TH4011SD YY WW S1 G1 S2 G2 PowerDI is a registered trademark of Diodes Incorporated. DMTH4011SPDQ Document number: DS39465 Rev. 3 - 2 1 of 7 www.diodes.com January 2018 © Diodes Incorporated DMTH4011SPDQ Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Drain-Source Voltage Gate-Source Voltage VDSS Value 40 Unit V VGSS ±20 V Continuous Drain Current (Note 7) TC = +25°C TC = +100°C ID 42 29.7 A Continuous Drain Current (Note 6) TA = +25°C TA = +100°C ID 11.1 7.8 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM IS 60 A Maximum Continuous Body Diode Forward Current (Note 7) 3.3 A Pulsed Body Diode Forward Current (10µs Pulse, Duty Cycle = 1%) ISM 60 A Avalanche Current, L = 0.3mH IAS 11.9 A Avalanche Energy, L = 0.3mH EAS 21.4 mJ Symbol PD RθJA PD RθJC TJ, TSTG Value 2.6 57 37.5 4 -55 to +175 Thermal Characteristics Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 7) Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range TA = +25°C TC = +25°C Unit W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Symbol Min Typ Max Unit Test Condition BVDSS 40 — — V VGS = 0V, ID = 1mA IDSS IGSS — — 1 µA — — ±100 nA VDS = 32V, VGS = 0V VGS = ±20V, VDS = 0V VDS = VGS, ID = 250μA Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(TH) 2 V RDS(ON) — — 11.6 4 Static Drain-Source On-Resistance 15 mΩ VGS = 10V, ID = 20A VSD — — 1.2 V VGS = 0V, IS = 20A Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss — 805 — pF Output Capacitance Coss — 208 — pF Reverse Transfer Capacitance Gate Resistance Crss — pF Ω Total Gate Charge Rg Qg 15 2.76 — — — Gate-Source Charge Qgs Gate-Drain Charge 10.6 — — nC — 2.2 — nC Qgd — 2.7 — nC Turn-On Delay Time tD(ON) — 4.1 — ns Turn-On Rise Time Turn-Off Delay Time tR — — 3.8 — — ns ns — ns — 8.6 1.9 Body Diode Reverse Recovery Time tRR — 10.2 — ns Body Diode Reverse Recovery Charge QRR — 9.6 — nC Turn-Off Fall Time Notes: tD(OFF) tF VDS = 20V, VGS = 0V, f = 1MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 20V, ID = 20A, VGS = 10V VDD = 20V, VGS = 10V, RG = 1.6Ω, ID = 20A IF = 15A, di/dt = 400A/μs 6. Device mounted on FR-4 substrate PC board, 2oz. copper, with thermal bias to bottom layer 1inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMTH4011SPDQ Document number: DS39465 Rev. 3 - 2 2 of 7 www.diodes.com January 2018 © Diodes Incorporated DMTH4011SPDQ 30 30.0 VDS = 5.0V VGS = 5.0V 25 VGS = 6.0V VGS = 4.5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25.0 20.0 VGS = 10V 15.0 VGS = 4.0V 10.0 5.0 20 TJ = 175oC 15 TJ = 150oC TJ = 125oC 10 TJ = 85oC TJ = 25oC 5 VGS = 3.5V TJ = -55oC 0.0 0 0 0.5 1 1.5 2 2.5 3 0 VDS, DRAIN-SOURCE VOLTAGE (V) 3 4 5 100 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (mΩ) 20.00 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (mΩ) 2 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic Figure 1. Typical Output Characteristic 18.00 16.00 14.00 VGS = 10V 12.00 10.00 8.00 6.00 4.00 2.00 90 80 ID = 20A 70 60 50 40 30 20 10 0 0.00 0 5 10 15 20 25 2 30 4 6 8 10 12 14 16 18 20 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 0.03 2.4 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 1 VGS = 10V 0.025 TJ = 150oC 0.02 TJ = 175oC 0.015 TJ = 125oC 0.01 TJ = 85oC TJ = 25oC TJ = -55oC 0.005 2.2 2 1.8 VGS = 10V, ID = 20A 1.6 1.4 1.2 1 0.8 0.6 0.4 0 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature DMTH4011SPDQ Document number: DS39465 Rev. 3 - 2 3 of 7 www.diodes.com -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Temperature January 2018 © Diodes Incorporated DMTH4011SPDQ 3.5 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.03 0.02 VGS = 10V, ID = 20A 0.01 0 3 ID = 1mA 2.5 2 ID = 250µA 1.5 1 0.5 0 -50 -25 0 25 50 75 100 125 150 175 -50 TJ, JUNCTION TEMPERATURE (℃) 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Temperature Figure 7. On-Resistance Variation with Temperature 30 10000 f = 1MHz CT, JUNCTION CAPACITANCE (pF) VGS = 0V 25 IS, SOURCE CURRENT (A) -25 20 TJ = 175oC TJ = 150oC 15 TJ = 10 125oC TJ = 85oC TJ = 25oC 5 TJ = -55oC Ciss 1000 0 100 Coss 10 Crss 1 0 0.3 0.6 0.9 1.2 0 5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 10 15 20 25 30 35 40 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 10 100 RDS(ON) Limited ID, DRAIN CURRENT (A) 8 VGS (V) 6 4 VDS = 20V, ID = 20A 10 PW = 1s PW = 100ms PW = 10ms 1 2 0 0.1 0 2 4 6 8 10 12 Document number: DS39465 Rev. 3 - 2 0.1 PW = 100µs PW = 10µs PW = 1µs 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area Qg (nC) Figure 11. Gate Charge DMTH4011SPDQ PW = 1ms TJ(Max) = 175℃ TC = 25℃ Single Pulse DUT on Infinite Heatsink VGS = 10V 4 of 7 www.diodes.com January 2018 © Diodes Incorporated DMTH4011SPDQ 1 D=0.9 D=0.7 r(t), TRANSIENT THERMAL RESISTANCE D=0.5 D=0.3 0.1 D=0.1 D=0.05 0.01 D=0.02 D=0.01 D=0.005 RθJC (t) = r(t) * RθJC RθJC = 4℃/W Duty Cycle, D = t1/t2 D=Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance DMTH4011SPDQ Document number: DS39465 Rev. 3 - 2 5 of 7 www.diodes.com January 2018 © Diodes Incorporated DMTH4011SPDQ Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI5060-8 (Type C) D D1 0(4x) c x E1 A1 E y Seating Plane e 1 01(4x) Ø 1.000 Depth 0.07± 0.030 b1(8x) DETAIL A e/2 b(8x) 1 b2(2x) D3 L k A k1 E2 L4 D2 M D2 La DETAIL A L1 PowerDI5060-8 (Type C) Dim Min Max Typ A 0.90 1.10 1.00 A1 0 0.05 0.02 b 0.33 0.51 0.41 b1 0.300 0.366 0.333 b2 0.20 0.35 0.25 c 0.23 0.33 0.277 D 5.15 BSC D1 4.85 4.95 4.90 D2 1.40 1.60 1.50 D3 3.98 E 6.15 BSC E1 5.75 5.85 5.80 E2 3.56 3.76 3.66 e 1.27BSC k 1.27 k1 0.56 L 0.51 0.71 0.61 La 0.51 0.71 0.61 L1 0.05 0.20 0.175 L4 0.125 M 3.50 3.71 3.605 x 1.400 y 1.900 θ 10° 12° 11° θ1 6° 8° 7° All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI5060-8 (Type C) X4 8 Dimensions X3 C G G1 X X1 X2 X3 X4 Y Y1 Y2 Y3 Y1 X2 Y2 Y3 G1 X1 Y(4x) 1 X DMTH4011SPDQ Document number: DS39465 Rev. 3 - 2 C Value (in mm) 1.270 0.660 0.820 0.610 3.910 1.650 1.650 4.420 1.270 1.020 3.810 6.610 G 6 of 7 www.diodes.com January 2018 © Diodes Incorporated DMTH4011SPDQ IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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