CHA2069-99F 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. Main Features Gain & NF ( dB ) ■ Broad band performance 16-31GHz ■ 2.5dB noise figure ■ 22dB gain, 1dB gain flatness ■ Low DC power consumption, 55mA ■ 20dBm 3rd order intercept point ■ Chip size : 2,170 x 1,270x 0.1mm 24 22 20 18 16 14 12 10 8 6 4 2 0 14 16 18 20 22 24 26 28 30 32 34 Frequency ( GHz ) On wafer typical measurements. Main Electrical Characteristics Tamb.= +25°C Symbol Parameter NF Noise figure,18-31GHz G Gain G Min 18 Typ Max Unit 2.5 3.5 dB 22 1 Gain flatness Ref. : DSCHA20693246 - 03 Sep 13 1/8 dB 1.5 dB Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA2069-99F 18-31GHz Low Noise Amplifier Electrical Characteristics Tamb = +25°C, Vd = +4,5V Pads:B=D=E=Gnd Symbol Fop G G NF VSWRin VSWRout IP3 Parameter Operating frequency range Min 16 Typ 18 22 Gain (1) Max 31 Unit Ghz dB 1 1.5 dB Noise figure (1) 2.5 3.5 dB Input VSWR (1) 2.0:1 2.5:1 2:0:1 2.5:1 Gain flatness (1) Ouput VSWR (1) 3rd order intercept point 20 dBm P1dB Output power at 1dB gain compression 10 dBm Id (2) 55 Drain bias current 75 mA (1) These values are representative of on-wafer measurements that are made without bonding wires at the RF ports. (2) This current is the typical value from the low noise low consumption biasing (B,D, E grounded) Absolute Maximum Ratings (3) Tamb = +25°C Symbol Parameter Vd Drain bias voltage (5) Pin Maximum peak input power overdrive (4) Top Operating temperature range Tstg Storage temperature range Values 5.0 +15 -40 to +85 -55 to +125 Unit V dBm °C °C (3) Operation of this device above anyone of these paramaters may cause permanent damage. Duration < 1s. (5) See chip biasing options pp7 (4) Ref. : DSCHA20693246 - 03 Sep 13 2/8 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA2069-99F 18-31GHz Low Noise Amplifier Typical result Chip typical Response (on wafer Sij): Tamb.= +25°C, VD=4.5V, ID=+55mA F(GHz) S11 S12 mod pha mod Pha dB deg dB Deg 2 -0.01 -34.9 -83.58 -127.8 4 -0.01 -71.6 -76.83 108.8 6 -0.15 -112.7 -66.00 60.8 8 -0.74 -164.6 -71.92 -16.4 10 -3.30 128.2 -70.19 -49.4 11 -5.18 90.4 -59.14 -73.7 12 -6.94 50.5 -54.33 -122.3 13 -7.98 11.7 -51.51 -169.1 14 -8.31 -23.4 -50.07 149.9 15 -8.58 -54.0 -49.42 116.2 16 -9.01 -77.8 -49.02 87.9 17 -9.66 -97.0 -49.24 56.9 18 -10.27 -112.2 -49.74 38.9 19 -11.44 -125.0 -48.80 9.0 20 -12.60 -132.7 -50.27 -20.2 21 -13.74 -137.8 -50.08 -36.8 22 -14.44 -140.0 -50.55 -62.5 23 -15.21 -142.8 -51.54 -81.8 24 -16.15 -144.4 -51.68 -101.2 25 -16.91 -142.9 -53.88 -123.9 26 -17.29 -139.8 -55.05 -131.7 27 -16.84 -139.8 -56.50 -130.9 28 -16.95 -147.5 -54.45 -134.4 29 -20.07 -167.5 -52.53 -163.2 30 -30.52 -155.1 -54.62 -174.1 31 -27.00 -17.8 -53.75 179.4 32 -14.97 -22.9 -53.19 178.6 33 -9.33 -43.0 -51.06 149.6 34 -5.88 -63.5 -52.88 130.3 35 -3.76 -82.7 -49.61 134.9 36 -2.43 -100.5 -47.83 116.4 37 -1.79 -116.2 -52.98 85.7 38 -1.35 -129.6 -46.64 67.5 39 -1.14 -140.6 -59.58 31.3 40 -0.83 -151.3 -54.65 61.1 Ref. : DSCHA20693246 - 03 Sep 13 3/8 S21 mod dB -63.71 -58.71 -23.56 1.54 12.91 16.99 19.60 21.14 21.66 22.18 22.07 22.35 22.25 22.30 22.38 22.38 22.60 22.72 22.60 22.65 22.52 22.33 22.31 22.38 22.26 22.16 21.80 21.01 19.68 17.65 15.15 12.27 9.27 6.10 2.95 S22 pha deg -13.4 67.0 -164.4 82.3 -27.1 -80.0 -134.0 175.3 129.6 87.5 51.3 17.5 -13.3 -43.3 -72.0 -99.8 -127.6 -155.4 176.7 148.6 121.6 95.0 68.4 40.0 11.1 -19.5 -52.8 -87.4 -122.9 -157.6 170.2 141.0 114.2 90.1 68.0 mod dB -1.00 -1.47 -2.32 -3.60 -5.05 -5.37 -7.20 -9.15 -11.20 -13.60 -16.65 -21.01 -28.25 -29.93 -20.66 -16.29 -13.67 -12.01 -10.83 -10.08 -9.73 -9.58 -9.80 -10.82 -11.30 -11.94 -11.76 -10.65 -9.14 -7.96 -6.97 -6.11 -5.37 -4.70 -4.13 pha deg -119.2 175.5 127.4 81.3 47.4 16.5 -11.0 -34.1 -56.3 -77.5 -96.6 -115.6 -138.6 70.6 26.9 8.9 -8.6 -23.6 -36.2 -48.8 -59.3 -69.9 -78.4 -83.0 -83.9 -81.7 -73.8 -68.9 -68.4 -71.3 -75.0 -79.3 -83.2 -87.6 -92.4 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA2069-99F 18-31GHz Low Noise Amplifier Typical Results Chip Typical Response (On wafer Sij): Tamb = +25°C Vd = 4.5V ; B , D & E=GND; Id = 55mA Typical Gain and Matching. Typical Poutput Power -1dB. Ref. : DSCHA20693246 - 03 Sep 13 4/8 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA2069-99F 18-31GHz Low Noise Amplifier Typical Test-Jig Results Circuit Typical Response ( Test-Jig ) : Tamb = +25°C Vd = 4.5V ; B ,D & E =Pads grounded ; Id = 55mA (G1, G2, A, C & F non connected ) These values are representative of the package assembly with input and output bonding wires of typically 0.15nH. Typical Linear measurements. Typical NOISE Figure measurements. Ref. : DSCHA20693246 - 03 Sep 13 5/8 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA2069-99F 18-31GHz Low Noise Amplifier Chip schematic and Pad Identification Pad Size :100/80um, chip thickness 100um Dimensions : 2170 x 1270µm 35µm Ref. : DSCHA20693246 - 03 Sep 13 6/8 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA2069-99F 18-31GHz Low Noise Amplifier Typical Chip Assembly Chip Biasing options This chip is self-biased, and flexibility is provided by the access to number of pads. the internal DC electrical schematic is given in order to use these pads in a safe way. The two requirements are : N°1 : Not exceed Vds = 3.5Volt ( internal Drain to Source voltage ). N°2 : Not biased in such a way that Vgs becomes positive. ( internal Gate to Source voltage ) We propose two standard biasing : Low Noise and low consumption : Vd = 4.5V and B, D, E grounded. All the other pads non connected ( NC ). Idd = 55mA & Pout-1dB = 10dBm Typical. ( Equivalent to A,B,C,D,E F: non connected and Vd=4.5V ; G1=G2=G3=+1.V ). Low Noise and higher output power Vd = 4.5V and B, C, F grounded. All the other pads non connected ( NC ). Idd = 75mA & Pout-1dB = 12dBm Typical.. Ref. : DSCHA20693246 - 03 Sep 13 7/8 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA2069-99F 18-31GHz Low Noise Amplifier Recommended ESD management Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD sensitivity and handling recommendations for the UMS products. Recommended environmental management UMS products are compliant with the regulation in particular with the directives RoHS N°2011/65 and REACh N°1907/2006. More environmental data are available in the application note AN0019 also available at http://www.ums-gaas.com. Ordering Information Chip form: CHA2069-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA20693246 - 03 Sep 13 8/8 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34