BZX84-V-Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes FEATURES • These diodes are also available in other case styles and other configurations including: the SOD-123 case with type designation BZT52 series, the zener diode common anode configuration in the SOT-23 case with type designation AZ23 series and the zener diode common cathode configuration in the SOT-23 case with type designation DZ23 series 3 2 1 20421 • The Zener voltages are graded according to the international E 24 standard. Standard zener voltage tolerance is ± 5 %. Replace “C” with “B” for 2 % tolerance. PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT VZ range nom. 2.4 to 75 V Test current IZT 2; 5 mA VZ specification Pulse current Int. construction Single • Silicon planar power Zener diodes • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC ORDERING INFORMATION DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY BZX84-V-series BZX84-V-series-GS18 10 000 (8 mm tape on 13" reel) 10 000 BZX84-V-series BZX84-V-series-GS08 3000 (8 mm tape on 7" reel) 15 000 PACKAGE PACKAGE NAME SOT-23 MOLDING COMPOUND MOISTURE SENSITIVITY FLAMMABILITY RATING LEVEL WEIGHT 8.8 mg UL 94 V-0 MSL level 1 (according J-STD-020) SOLDERING CONDITIONS 260 °C/10 s at terminals ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Power dissipation Tamb = 25 °C, device on fiberglass substrate, acc. layout on page 7 Ptot 300 mW Thermal resistance junction to ambient air Tamb = 25 °C, device on fiberglass substrate, acc. layout on page 7 RthJA 420 K/W Tj 150 °C Tstg - 65 to + 150 °C Junction temperature Storage temperature range Rev. 1.9, 08-Dec-11 Document Number: 85763 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZX84-V-Series www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) ZENER VOLTAGE RANGE PART NUMBER MARKING CODE VZ at IZT1 TEST CURRENT IZT1 V REVERSE LEAKAGE CURRENT DYNAMIC RESISTANCE f = 1 kHz TEMPERATURE COEFFICIENT IR at VR ZZ at IZT1 ZZK at IZT2 DVZ at IZT1 : 10-4/°C IZT2 mA µA V MIN. NOM. MAX. MAX. MAX. MIN. MAX. BZX84C2V4-V Z11 2.2 2.4 2.6 5 1 50 1 100 275 -9 -4 BZX84C2V7-V Z12 2.5 2.7 2.9 5 1 20 1 100 600 -9 -4 BZX84C3V0-V Z13 2.8 3.0 3.2 5 1 10 1 95 600 -9 -3 BZX84C3V3-V Z14 3.1 3.3 3.5 5 1 5 1 95 600 -8 -3 BZX84C3V6-V Z15 3.4 3.6 3.8 5 1 5 1 90 600 -8 -3 BZX84C3V9-V Z16 3.7 3.9 4.1 5 1 3 1 90 600 -7 -3 BZX84C4V3-V Z17 4.0 4.3 4.6 5 1 3 1 90 600 -6 -1 BZX84C4V7-V Z1 4.4 4.7 5.0 5 1 3 2 80 500 -5 2 BZX84C5V1-V Z2 4.8 5.1 5.4 5 1 2 2 60 480 -3 4 BZX84C5V6-V Z3 5.2 5.6 6.0 5 1 1 2 40 400 -2 6 BZX84C6V2-V Z4 5.8 6.2 6.6 5 1 3 4 10 150 -1 7 BZX84C6V8-V Z5 6.4 6.8 7.2 5 1 2 4 15 80 2 7 BZX84C7V5-V Z6 7.0 7.5 7.9 5 1 1 5 15 80 3 7 BZX84C8V2-V Z7 7.7 8.2 8.7 5 1 0.7 5 15 80 4 7 BZX84C9V1-V Z8 8.5 9.1 9.6 5 1 0.5 6 15 100 5 8 BZX84C10-V Z9 9.4 10 10.6 5 1 0.2 7 20 150 5 8 BZX84C11-V Y1 10.4 11 11.6 5 1 0.1 8 20 150 5 9 BZX84C12-V Y2 11.4 12 12.7 5 1 0.1 8 25 150 6 9 BZX84C13-V Y3 12.4 13 14.1 5 1 0.1 8 30 170 7 9 BZX84C15-V Y4 13.8 15 15.6 5 1 0.05 10.5 30 200 7 9 BZX84C16-V Y5 15.3 16 17.1 5 1 0.05 11.2 40 200 8 9.5 BZX84C18-V Y6 16.8 18 19.1 5 1 0.05 12.6 45 225 8 9.5 BZX84C20-V Y7 18.8 20 21.2 5 1 0.05 14.0 55 225 8 10 BZX84C22-V Y8 20.8 22 23.3 5 1 0.05 15.4 55 250 8 10 BZX84C24-V Y9 22.8 24 25.6 5 1 0.05 16.8 70 250 8 10 BZX84C27-V Y10 25.1 27 28.9 2 0.5 0.05 18.9 80 300 8 10 BZX84C30-V Y11 28 30 32 2 0.5 0.05 21.0 80 300 8 10 BZX84C33-V Y12 31 33 35 2 0.5 0.05 23.1 80 325 8 10 BZX84C36-V Y13 34 36 38 2 0.5 0.05 25.2 90 350 8 10 BZX84C39-V Y14 37 39 41 2 0.5 0.05 27.3 130 350 10 12 BZX84C43-V Y15 40 43 46 2 0.5 0.05 30.1 150 375 10 12 BZX84C47-V Y16 44 47 50 2 0.5 0.05 32.9 170 375 10 12 BZX84C51-V Y17 48 51 54 2 0.5 0.05 35.7 180 400 10 12 BZX84C56-V Y18 52 56 60 2 0.5 0.05 39.2 200 425 9 11 BZX84C62-V Y19 58 62 66 2 0.5 0.05 43.4 215 450 9 12 BZX84C68-V Y20 64 68 72 2 0.5 0.05 47.6 240 475 10 12 BZX84C75-V Y21 70 75 79 2 0.5 0.05 52.5 255 500 10 12 Rev. 1.9, 08-Dec-11 Document Number: 85763 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZX84-V-Series www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) ZENER VOLTAGE RANGE PART NUMBER MARKING CODE VZ at IZT1 TEST CURRENT IZT1 V REVERSE LEAKAGE CURRENT DYNAMIC RESISTANCE f = 1 kHz TEMPERATURE COEFFICIENT IR at VR ZZ at IZT1 ZZK at IZT2 DVZ at IZT1 : 10-4/°C IZT2 mA µA V MIN. NOM. MAX. MAX. MAX. MIN. MAX. BZX84B2V4-V Z50 2.35 2.4 2.45 5 1 50 1 100 275 -9 -4 BZX84B2V7-V Z51 2.65 2.7 2.75 5 1 20 1 100 600 -9 -4 BZX84B3V0-V Z52 2.94 3.0 3.06 5 1 10 1 95 600 -9 -3 BZX84B3V3-V Z53 3.23 3.3 3.37 5 1 5 1 95 600 -8 -3 BZX84B3V6-V Z54 3.53 3.6 3.67 5 1 5 1 90 600 -8 -3 BZX84B3V9-V Z55 3.82 3.9 3.98 5 1 3 1 90 600 -7 -3 BZX84B4V3-V Z56 4.21 4.3 4.39 5 1 3 1 90 600 -6 -1 BZX84B4V7-V Z57 4.61 4.7 4.79 5 1 3 2 80 500 -5 2 BZX84B5V1-V Z58 5.0 5.1 5.2 5 1 2 2 60 480 -3 4 BZX84B5V6-V Z59 5.49 5.6 5.71 5 1 1 2 40 400 -2 6 BZX84B6V2-V Z60 6.08 6.2 6.32 5 1 3 4 10 150 -1 7 BZX84B6V8-V Z61 6.66 6.8 6.94 5 1 2 4 15 80 2 7 BZX84B7V5-V Z62 7.35 7.5 7.65 5 1 1 5 15 80 3 7 BZX84B8V2-V Z63 8.04 8.2 8.36 5 1 0.7 5 15 80 4 7 BZX84B9V1-V Z64 8.92 9.1 9.28 5 1 0.5 6 15 100 5 8 BZX84B10-V Z65 9.8 10 10.2 5 1 0.2 7 20 150 5 8 BZX84B11-V Z66 10.8 11 11.2 5 1 0.1 8 20 150 5 9 BZX84B12-V Z67 11.8 12 12.2 5 1 0.1 8 25 150 6 9 BZX84B13-V Z68 12.7 13 13.3 5 1 0.1 8 30 170 7 9 BZX84B15-V Z69 14.7 15 15.3 5 1 0.05 10.5 30 200 7 9 BZX84B16-V Z70 15.7 16 16.3 5 1 0.05 11.2 40 200 8 9.5 BZX84B18-V Z71 17.6 18 18.4 5 1 0.05 12.6 45 225 8 9.5 BZX84B20-V Z72 19.6 20 20.4 5 1 0.05 14 55 225 8 10 BZX84B22-V Z73 21.6 22 22.4 5 1 0.05 15.4 55 250 8 10 BZX84B24-V Z74 23.5 24 24.5 5 1 0.05 16.8 70 250 8 10 BZX84B27-V Z75 26.5 27 27.5 2 0.5 0.05 18.9 80 300 8 10 BZX84B30-V Z76 29.4 30 30.6 2 0.5 0.05 21 80 300 8 10 BZX84B33-V Z77 32.3 33 33.7 2 0.5 0.05 23.1 80 325 8 10 BZX84B36-V Z78 35.3 36 36.7 2 0.5 0.05 25.2 90 350 8 10 BZX84B39-V Z79 38.2 39 39.8 2 0.5 0.05 27.3 130 350 10 12 BZX84B43-V Z80 42.1 43 43.9 2 0.5 0.05 30.1 150 375 10 12 BZX84B47-V Z81 46.1 47 47.9 2 0.5 0.05 32.9 170 375 10 12 BZX84B51-V Z82 50 51 52 2 0.5 0.05 35.7 180 400 10 12 BZX84B56-V Z83 54.9 56 57.1 2 0.5 0.05 39.2 200 425 9 11 BZX84B62-V Z84 60.8 62 63.2 2 0.5 0.05 43.4 215 450 9 12 BZX84B68-V Z85 66.6 68 69.4 2 0.5 0.05 47.6 240 475 10 12 BZX84B75-V Z86 73.5 75 76.5 2 0.5 0.05 52.5 255 500 10 12 Rev. 1.9, 08-Dec-11 Document Number: 85763 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZX84-V-Series www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) mA 103 Ω 100 TJ = 25 °C 102 IF 5 4 10 3 rzj TJ = 100 °C 1 10-1 33 2 27 22 10 TJ = 25 °C 10-2 18 15 5 4 10-3 12 3 10 2 10-4 10-5 0 6.8/8.2 6.2 1 0.2 0.4 0.6 0.8 1V VF 18114 0.1 2 1 5 2 5 18119 Fig. 1 - Forward Characteristics 10 IZ 2 5 100 mA Fig. 4 - Dynamic Resistance vs. Zener Current mW 500 Ω 103 Tj = 25 °C 7 5 4 400 Rzj 47 + 51 43 39 36 3 Ptot 2 300 102 7 200 5 4 3 100 2 10 0.1 0 0 100 200 °C Tamb 18115 Fig. 2 - Admissible Power Dissipation vs. Ambient Temperature 3 4 5 1 2 3 4 5 IZ 10 mA Fig. 5 - Dynamic Resistance vs. Zener Current K/W 103 1000 rzj 2 18120 TJ = 25 °C 5 4 3 2 Rzth Rzth = RthA x VZ x 5 4 3 2 ∆ VZ ∆Tj 102 100 5 4 3 5 4 3 2 2 10 2.7 3.6 4.7 5.1 5 4 3 2 5.6 1 0.1 2 18117 5 1 2 5 10 2 5 100 mA IZ Fig. 3 - Dynamic Resistance vs. Zener Current Rev. 1.9, 08-Dec-11 10 5 4 3 negative 2 positive 1 1 18121 2 3 4 5 10 2 3 4 5 100 V VZ at IZ = 5 mA Fig. 6 - Thermal Differential Resistance vs. Zener Voltage Document Number: 85763 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZX84-V-Series www.vishay.com Vishay Semiconductors Ω 100 mV/°C 100 IZ = 5 mA 7 5 4 Rzj ∆ VZ ∆Tj 3 2 80 60 10 7 40 5 4 3 20 2 Tj = 25 °C IZ = 5 mA 1 1 2 3 10 4 5 2 18122 3 4 5 0 0 100 V VZ 20 60 40 Fig. 7 - Dynamic Resistance vs. Zener Voltage 80 100 V VZ 18125 Fig. 10 - Temperature Dependence of Zener Voltage vs. Zener Voltage mV/°C 25 V 9 20 7 8 ∆ VZ ∆Tj 5 mA IZ = 1 mA 20 mA 15 ∆ VZ 51 6 5 43 4 10 36 3 5 2 1 0 0 -5 1 2 3 4 5 10 2 100 V 3 4 5 0 VZ 18123 25 0.7 VZ at IZ = 5 mA 0.6 8 0.4 7 0.3 0.2 6.2 5.9 0.1 5.6 0 1 0.8 0.6 0.4 0.2 0 5.1 -1 3.6 20 40 60 80 4.7 100 120 140 C Tj Fig. 9 - Change of Zener Voltage vs. Junction Temperature Rev. 1.9, 08-Dec-11 140 °C 1.2 ∆ VZ 0 80 100 120 Tj ∆VZ = Rzth x IZ 1.4 0.5 18124 60 V 1.6 15 10 - 0.2 40 Fig. 11 - Change of Zener Voltage vs. Junction Temperature V 0.8 20 18126 Fig. 8 - Temperature Dependence of Zener Voltage vs. Zener Voltage ∆ VZ IZ = 2 mA -1 - 0.2 - 0.4 18127 1 2 3 4 5 10 2 3 4 5 100 V VZ at IZ = 5 mA Fig. 12 - Change of Zener Voltage from Turn-on up to the Point of Thermal Equilibrium vs. Zener Voltage Document Number: 85763 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZX84-V-Series www.vishay.com Vishay Semiconductors mA 30 V 5 10 12 ∆VZ = Rzth x IZ Tj = 25 °C 4 lZ ∆ VZ 3 22 27 Test 10 current IZ 5 mA 1 33 36 IZ = 2 mA 0 0 0 20 40 60 80 0 100 V 40 lZ 8.2 8 lZ 30 6 20 4 Test current IZ 5 mA 40 V Tj = 25 °C 6.8 3.3 4.7 30 VZ mA 10 3.9 5.6 2.7 20 Fig. 15 - Breakdown Characteristics Fig. 13 - Change of Zener Voltage from Turn-on up to the Point of Thermal Equilibrium vs. Zener Voltage Tj = 25 °C 10 18112 VZ 18128 10 18 IZ = 5 mA 2 mA 50 15 20 Test current IZ 5 mA 39 51 43 47 2 0 0 0 1 18111 2 3 4 5 6 7 8 9 10 V VZ Fig. 14 - Breakdown Characteristics Rev. 1.9, 08-Dec-11 0 18113 10 20 30 40 50 60 70 80 90 100 V VZ Fig. 16 - Breakdown Characteristics Document Number: 85763 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZX84-V-Series www.vishay.com Vishay Semiconductors LAYOUT FOR RT; JA TEST Thickness: fiberglass 0.059" (1.5 mm) Copper leads 0.012" (0.3 mm) 7.5 (0.3) 3 (0.12) 1 (0.4) 2 (0.8) 1 (0.4) 12 (0.47) 15 (0.59) 2 (0.8) 0.8 (0.03) 5 (0.2) 1.5 (0.06) 5.1 (0.2) 17451 PACKAGE DIMENSIONS in millimeters (inches): SOT-23 1.15 (0.045) 0° t o8 ° 0.2 (0.008) 0.098 (0.004) 0.175 (0.007) 0.1 (0.004) max. 0.550 ref. (0.022 ref.) 0.9 (0.035) 3.1 (0.122) 2.8 (0.110) 0.5 (0.020) 0.45 (0.018) 0.45 (0.018) 0.35 (0.014) 0.35 (0.014) 0.3 (0.012) 2.6 (0.102) 2.35 (0.093) Foot print recommendation: 1 (0.039) 0.9 (0.035) 0.9 (0.035) 0.7 (0.028) 2 (0.079) 1.20 (0.047) 1.43 (0.056) 0.45 (0.018) 0.35 (0.014) 1 (0.039) 0.9 (0.035) 0.95 (0.037) 0.95 (0.037) Document no.: 6.541-5014.01-4 Rev. 8 - Date: 23.Sept.2009 17418 Rev. 1.9, 08-Dec-11 Document Number: 85763 7 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000