DTC124TH / DTC124TE / DTC124TUA / DTC124TKA / DTC124TSA Transistors Digital transistors (built-in resistor) DTC124TH / DTC124TE / DTC124TUA / DTC124TKA / DTC124TSA !External dimensions (Units : mm) DTC124TH 1.6 (2) 1.6 (3) 1.0 (1) 0.5 0.5 0.27 0.85 0to0.1 0.7 0.12 ROHM : EMT3 Flat lead EIAJ : SC-89 Abbreviated symbol : 05 0.3 !Equivalent circuit 1.6 0.8 0.2 (2) (3) 1.0 (1) 0.5 0.5 DTC124TE (1) Emitter (2) Base (3) Collector 0.2 !Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thinfilm resistors with complete of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making device design easy. 0.1Min. ROHM : EMT3 EIAJ : SC-75A 0.7 0~0.1 0.55 0.15 1.6 Abbreviated symbol : 05 (1)Emitter (2)Base (3)Collector C B R1 2.0 1.3 (2) (3) 0.3 B : Base C : Collector E : Emitter 0.65 0.65 DTC124TUA (1) 1.25 2.1 0.1~0.4 ROHM : UMT3 EIAJ : SC-70 0.9 0~0.1 0.7 0.15 0.2 Each lead has same dimensions Abbreviated symbol : 05 (1)Emitter (2)Base (3)Collector 0.95 0.95 1.9 2.9 (2) (3) 0.4 (1) DTC124TKA 1.6 2.8 0~0.1 0.8 0.15 Each lead has same dimensions 0.3~0.6 ROHM : SMT3 EIAJ : SC-59 1.1 E Abbreviated symbol : 05 DTC124TSA 2 (15Min.) 3Min. 3 4 (1)Emitter (2)Base (3)Collector 0.45 Taping specifications 2.5 0.5 0.45 5 (1)(2)(3) ROHM : SPT EIAJ : SC-72 (1)Emitter (2)Collector (3)Base DTC124TH / DTC124TE / DTC124TUA / DTC124TKA / DTC124TSA Transistors !Absolute maximum ratings (Ta = 25°C) Parameter Symbol Limits(DTC124T ) H E UA KA SA Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 100 mA Collector power dissipation Pc Junction temperature Tj 150 °C Storage temperature Tstg −55 ~ +150 °C 150 200 300 mW !Electrical characteristics (Ta = 25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Symbol Min. BVCBO BVCEO Typ. Max. Unit Conditions 50 − − V IC=50µA 50 − − V IC=1mA − BVEBO 5 − V IE=50µA Collector cutoff current ICBO − − 0.5 µA VCB=50V Emitter cutoff current IEBO − − 0.5 µA VEB=4V VCE(sat) − − 0.3 V IC/IB=5mA/0.5mA DC current transfer ratio hFE 100 250 600 − VCE=5V,IC=1mA Input resistance R1 15.4 22 28.6 kΩ Transition frequency fT − 250 − MHZ Emitter-base breakdown voltage Collector-emitter saturation voltage − VCE=10V,IE=−5mA,f=100MHZ ∗Transition frequency of the device !Packaging specifications Package EMT3H EMT3 Packaging type Taping Taping T2L 8000 Code Part No. Basic ordering unit (pieces) DTC124TH UMT3 Taping SMT3 Taping SST3 Taping 3000 T106 3000 T146 3000 TP 5000 − − − − − − − − − TL DTC124TE − DTC124TUA − − DTC124TKA − − − DTC124TSA − − − − − ∗ DTC124TH / DTC124TE / DTC124TUA / DTC124TKA / DTC124TSA Transistors 1k VCE=5V DC CURRENT GAIN : hFE 500 200 100 Ta=100˚C 25˚C -40˚C 50 20 10 5 2 1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m COLLECTOR CURRENT : IC(A) Fig.1 DC current gain vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) !Electrical characteristic curves 1 500m lC/lB=10 200m Ta=100˚C 25˚C -40˚C 100m 50m 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m COLLECTOR CURRENT : IC(A) Fig.2 Collector-emitter saturation voltage vs. collector current