Rohm DTC124TUA Digital transistors (built-in resistor) Datasheet

DTC124TH / DTC124TE / DTC124TUA /
DTC124TKA / DTC124TSA
Transistors
Digital transistors (built-in resistor)
DTC124TH / DTC124TE / DTC124TUA /
DTC124TKA / DTC124TSA
!External dimensions (Units : mm)
DTC124TH
1.6
(2)
1.6
(3)
1.0
(1)
0.5 0.5
0.27
0.85
0to0.1
0.7
0.12
ROHM : EMT3 Flat lead
EIAJ : SC-89
Abbreviated symbol : 05
0.3
!Equivalent circuit
1.6
0.8
0.2
(2)
(3)
1.0
(1)
0.5 0.5
DTC124TE
(1) Emitter
(2) Base
(3) Collector
0.2
!Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thinfilm resistors with
complete of the input. They also have the advantage
of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making device design easy.
0.1Min.
ROHM : EMT3
EIAJ : SC-75A
0.7
0~0.1
0.55
0.15
1.6
Abbreviated symbol : 05
(1)Emitter
(2)Base
(3)Collector
C
B
R1
2.0
1.3
(2)
(3)
0.3
B : Base
C : Collector
E : Emitter
0.65 0.65
DTC124TUA
(1)
1.25
2.1
0.1~0.4
ROHM : UMT3
EIAJ : SC-70
0.9
0~0.1
0.7
0.15
0.2
Each lead has same dimensions
Abbreviated symbol : 05
(1)Emitter
(2)Base
(3)Collector
0.95 0.95
1.9
2.9
(2)
(3)
0.4
(1)
DTC124TKA
1.6
2.8
0~0.1
0.8
0.15
Each lead has same dimensions
0.3~0.6
ROHM : SMT3
EIAJ : SC-59
1.1
E
Abbreviated symbol : 05
DTC124TSA
2
(15Min.)
3Min.
3
4
(1)Emitter
(2)Base
(3)Collector
0.45
Taping specifications
2.5
0.5 0.45
5
(1)(2)(3)
ROHM : SPT
EIAJ : SC-72
(1)Emitter
(2)Collector
(3)Base
DTC124TH / DTC124TE / DTC124TUA /
DTC124TKA / DTC124TSA
Transistors
!Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits(DTC124T )
H
E
UA
KA
SA
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
100
mA
Collector power dissipation
Pc
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 ~ +150
°C
150
200
300
mW
!Electrical characteristics (Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Symbol Min.
BVCBO
BVCEO
Typ.
Max.
Unit
Conditions
50
−
−
V
IC=50µA
50
−
−
V
IC=1mA
−
BVEBO
5
−
V
IE=50µA
Collector cutoff current
ICBO
−
−
0.5
µA
VCB=50V
Emitter cutoff current
IEBO
−
−
0.5
µA
VEB=4V
VCE(sat)
−
−
0.3
V
IC/IB=5mA/0.5mA
DC current transfer ratio
hFE
100
250
600
−
VCE=5V,IC=1mA
Input resistance
R1
15.4
22
28.6
kΩ
Transition frequency
fT
−
250
−
MHZ
Emitter-base breakdown voltage
Collector-emitter saturation voltage
−
VCE=10V,IE=−5mA,f=100MHZ
∗Transition frequency of the device
!Packaging specifications
Package
EMT3H
EMT3
Packaging type
Taping
Taping
T2L
8000
Code
Part No. Basic ordering unit (pieces)
DTC124TH
UMT3
Taping
SMT3
Taping
SST3
Taping
3000
T106
3000
T146
3000
TP
5000
−
−
−
−
−
−
−
−
−
TL
DTC124TE
−
DTC124TUA
−
−
DTC124TKA
−
−
−
DTC124TSA
−
−
−
−
−
∗
DTC124TH / DTC124TE / DTC124TUA /
DTC124TKA / DTC124TSA
Transistors
1k
VCE=5V
DC CURRENT GAIN : hFE
500
200
100
Ta=100˚C
25˚C
-40˚C
50
20
10
5
2
1
100µ 200µ
500µ 1m
2m
5m 10m 20m
50m 100m
COLLECTOR CURRENT : IC(A)
Fig.1 DC current gain vs. collector
current
COLLECTOR SATURATION VOLTAGE : VCE(sat)(V)
!Electrical characteristic curves
1
500m
lC/lB=10
200m
Ta=100˚C
25˚C
-40˚C
100m
50m
20m
10m
5m
2m
1m
100µ 200µ
500µ 1m
2m
5m 10m 20m
50m 100m
COLLECTOR CURRENT : IC(A)
Fig.2 Collector-emitter saturation
voltage vs. collector current
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