D
TO-247
G
APT1001R1BN 1000V 10.5A 1.10Ω
S
POWER MOS IV
APT1001R3BN 1000V 10.0A 1.30Ω
®
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
APT
1001RBN
APT
1001R3BN
UNIT
1000
1000
Volts
10.5
10
42
40
Amps
1
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage
±30
Volts
Total Power Dissipation @ TC = 25°C
310
Watts
Linear Derating Factor
2.48
W/°C
PD
TJ,TSTG
TL
-55 to 150
Operating and Storage Junction Temperature Range
°C
300
Lead Temperature: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BVDSS
ID(ON)
RDS(ON)
IDSS
IGSS
VGS(TH)
Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage
(VGS = 0V, ID = 250 µA)
On State Drain Current
APT1001R1BN
1000
APT1001R3BN
1000
APT1001R1BN
10.5
APT1001R3BN
10
TYP
MAX
UNIT
Volts
2
(VDS > I D(ON) x R DS(ON) Max, VGS = 10V)
Drain-Source On-State Resistance
MIN
2
Amps
APT1001R1BN
1.10
APT1001R3BN
1.30
Ohms
(VGS = 10V, 0.5 ID [Cont.])
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
250
µA
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
4
Volts
MAX
UNIT
Gate Threshold Voltage
(VDS = VGS, ID = 1.0mA)
2
THERMAL CHARACTERISTICS
Characteristic
RθJC
Junction to Case
RθJA
Junction to Ambient
MIN
TYP
0.40
40
°C/W
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
050-0007 Rev C
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT1001R1/1001R3BN
Characteristic
MIN
Test Conditions
TYP
MAX
Ciss
Input Capacitance
VGS = 0V
2460
2950
Coss
Output Capacitance
VDS = 25V
360
500
Crss
Reverse Transfer Capacitance
f = 1 MHz
105
160
Qg
Total Gate Charge
Qgs
3
VGS = 10V
90
130
VDD = 0.5 VDSS
9.3
14
ID = ID [Cont.] @ 25°C
47
70
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
tr
VGS = 15V
15
30
VDD = 0.5 VDSS
16
32
ID = ID [Cont.] @ 25°C
64
95
RG = 1.8Ω
24
48
TYP
MAX
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
UNIT
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions / Part Number
Symbol
Continuous Source Current
(Body Diode)
IS
ISM
Pulsed Source Current
(Body Diode)
1
VSD
Diode Forward Voltage
2
MIN
APT1001R1BN
10.5
APT1001R3BN
10
APT1001R1BN
42
APT1001R3BN
40
(VGS = 0V, IS = -ID [Cont.])
1.3
UNIT
Amps
Volts
t rr
Reverse Recovery Time (IS = -ID [Cont.], dl S/dt = 100A/µs)
636
1200
ns
Q rr
Reverse Recovery Charge (IS = -ID [Cont.], dl S/dt = 100A/µs)
4.5
11
µC
TYP
MAX
UNIT
SAFE OPERATING AREA CHARACTERISTICS
Symbol
Characteristic
Test Conditions / Part Number
MIN
SOA1
Safe Operating Area
VDS = 0.4 VDSS, IDS = PD / 0.4 VDSS, t = 1 Sec.
310
SOA2
Safe Operating Area
IDS = ID [Cont.], VDS = PD / ID [Cont.], t = 1 Sec.
310
ILM
Inductive Current Clamped
APT1001R1BN
42
APT1001R3BN
40
Watts
Amps
1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.5
D=0.5
0.1
0.05
0.2
0.1
0.05
Note:
0.02
0.01
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-0007 Rev C
1.0
0.01
0.005
t2
SINGLE PULSE
0.001
10-5
t1
10-4
Duty Factor D = t1/t
2
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
APT1001R1/1001R3BN
V
16
=10V
GS
6V
ID, DRAIN CURRENT (AMPERES)
12
5.5V
8
5V
4
4.5V
T = +125°C
J
> I (ON) x R
(ON)MAX.
DS D
DS
230µ SEC. PULSE TEST
12
8
T = +125°C
J
T = -55°C
J
T = +25°C
J
0
2
4
6
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
ID, DRAIN CURRENT (AMPERES)
12
10
APT1001R1BN
8
APT1001R3BN
6
4
2
0
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
25
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
T = +25°C
J
2.5
8
5V
4
4.5V
2.5
T = 25°C
J
2µ SEC. PULSE TEST
NORMALIZED TO
2.0
V
GS
= 10V @ 0.5 I [Cont.]
D
V
1.5
=10V
GS
V =20V
GS
1.0
0.5
0.0
0
6
12
18
24
30
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.2
1.1
1.0
0.9
0.8
0.7
-50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.4
I = 0.5 I [Cont.]
D
D
V
GS
= 10V
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
T = -55°C
J
0
6V
5.5V
0
4
8
12
16
20
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
20
4
12
0
0
100
200
300
400
500
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
V
=10V
GS
4V
4V
0
16
V
1.2
1.0
0.8
0.6
0.4
-50 -25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-0007 Rev C
ID, DRAIN CURRENT (AMPERES)
16
APT1001R1/1001R3BN
60
10,000
APT1001R1BN
10µS
C
OPERATION HERE
LIMITED BY R
(ON)
DS
iss
100µS
APT1001R1BN
10
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
APT1001R3BN
APT1001R3BN
1mS
10mS
1
T
C
=+25°C
100mS
=+150°C
J
SINGLE PULSE
1,000
C
oss
C
rss
100
T
DC
APT1001R1/1001R3BN
10
.1
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
20
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
1
5 10
50 100
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
I = I [Cont.]
D
D
16
V
V
12
=100V
DS
=200V
DS
V
8
=500V
DS
4
0
100
50
20
T = +150°C
J
T = +25°C
J
10
5
2
1
0
.5
1.0
1.5
2.0
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
0
40
80
120
160
200
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
TO-247AD Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Drain
20.80 (.819)
21.46 (.845)
3.55 (.140)
3.81 (.150)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Gate
Drain
050-0007 Rev C
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)