Mimix CFB0303 High dynamic range low noise gaas fet Datasheet

High Dynamic Range
Low Noise GaAs FET
CFB0303
August 2006 - Rev 03-Aug-06
Features
Low-Noise Figure from 0.8 to 2.0 GHz
High Gain
High Intercept Point
Highly Stable
Easily Matched to 50
70 mil Package
PHEMT Material
Applications
Cellular Base Stations
PCS Base Stations
Industrial Data Networks
Description
base station receiver in PCS, Japanese PHS, AMPS, GSM and
other communications systems. The CFB0303 is in an industry-standard 70 mil package. It is surface mountable and
available in tape and reel.
Celeritek’s CFB0303 is a high performance GaAs
PHEMT with 600 µm gate width and 0.25 µm gate length.
The low noise figure and high intercept point of this device
makes it well suited for use as the low-noise amplifier of the
Electrical Specifications (TA = 25°C, 2 GHz)
Parameters
Conditions
Min
Typ
Max
Units
Vd = 4V, Id = 75 mA
Noise Figure 2
Associated Gain 2
Pout 1, 3
IP3 3
Id 3
@ Noise Figure
P-1
19.0
20.0
0.5
20.0
21.0
0.6
22.7
22.0
dB
dB
dBm
32
+5 dBm POUT/Tone
Transconductance
Saturated Drain Current
Pinchoff Voltages
34
dBm
@ P-1
83
mA
Vds = 4 V, Vgs = 0 V
Vds = 4 V, Vgs = 0 V
350
mho
80
140
Vds = 4 V, Ids = 1 mA
@ Tcase = 150°C liquid crystal test
Thermal Resistance
240
mA
-0.3
V
200
°C/W
Notes: 1. @ T
case = 25°C. Derate 5 mW/°C for Tcase >25°C.
2. Input matched for low noise.
3. Matched for power transfer.
Typical Scattering Parameters (TA = 25°C, VDS = 4 V, IDS = 75 mA)
S11
S21
S12
S22
Frequency
(GHz)
Mag
Ang
Mag (dB)
Ang
MAG (dB)
ANG
MAG
ANG
0.5
1.0
2.0
3.0
4.0
5.0
0.98
0.94
0.85
0.76
0.70
0.64
-24
-44
-80
-112
-134
-154
8.47
8.20
7.30
6.30
5.60
5.13
160
147
118
94
74
54
0.02
0.03
0.05
0.07
0.08
0.09
77
69
51
37
29
19
0.33
0.32
0.27
0.25
0.24
0.23
-9
-15
-36
-50
-55
-61
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 2
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
High Dynamic Range
Low Noise GaAs FET
CFB0303
August 2006 - Rev 03-Aug-06
Typical Noise Parameters (Vds = 4 V, Ids = 75 mA)
Frequency
(GHz)
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
Fmin 1
(dB)
0.4
0.4
0.4
0.4
0.4
0.4
0.5
0.5
0.5
0.5
Gamma Opt
Mag
Ang
0.6
0.6
0.6
0.6
0.5
0.5
0.5
0.5
0.5
0.5
27
29
32
35
38
41
45
49
54
60
Absolute Maximum Ratings
Parameter
Rn/50
0.19
0.17
0.18
0.18
0.17
0.16
0.15
0.15
0.14
0.13
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous Dissipation1
Channel Temperature
Storage Temperature
Symbol
Rating
Vds
Vgs
Ids
Pt
Tch
Tstg
+8V
-5V
Idss
750 mW
175°C
-65°C to +150°C
Note: 1. Fmin values reflect the circuit losses in the test fixture when
matched to optimum noise figure.
Notes
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 2 of 2
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
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