CC1175
High Performance RF Transmitter for Narrowband Systems
Applications
Key Features
One-way narrowband ultra low power wireless
systems with channel spacing down to 6.25 kHz
170 / 315 / 433 / 868 / 915 / 920 / 950 MHz
ISM/SRD band systems
Wireless Metering and Wireless Smart Grid
(AMR and AMI)
IEEE 802.15.4g systems
Home and building automation
Wireless alarm and security systems
Industrial monitoring and control
Wireless healthcare applications
Wireless sensor networks and Active RFID
Regulations
Suitable for systems targeting compliance with:
Europe
US
Japan
ETSI EN 300 220
ETSI EN 54-25
FCC CFR47 Part 15
FCC CFR47 Part 90, 24 and 101
ARIB RCR STD-T30
ARIB STD-T67
ARIB STD-T108
High performance single chip transmitter
o Very low phase noise: -111 dBc/Hz at 10
kHz offset
High spectral efficiency (9.6 kbps in 12.5 kHz
channel in compliance with FCC narrowbanding
mandate)
Programmable output power up to +16 dBm with
0.4 dB step size
Power Supply
o Wide supply voltage range (2.0 V - 3.6 V)
o Low current consumption:
- TX: 45 mA at +14 dBm
o Power down: 0.3 μA
Automatic output power ramping
Configurable data rates: 0 to 200 kbps
Supported modulation formats: 2-FSK, 2- GFSK,
4-FSK, 4-GFSK, MSK, OOK
RoHS compliant 5x5mm QFN 32 package
Peripherals and Support Functions
128-byte TX FIFO
TCXO support and control, also in power modes
Optional Coding Gain feature for increased
range and robustness
Support for seamless integration with the CC1190
for increased range giving up to +27dBm output
power
Temperature sensor
25 AVDD_PFD_CHP
27 AVDD_SYNTH2
26 DCPL_PFD_CHP
DCPL_XOSC
28 AVDD_XOSC
29
XOSC_Q2
30 XOSC_Q1
VDD_GUARD
1
24
RESET_N
2
23
LPF0
GPIO3
3
22
AVDD_SYNTH1
21
DCPL_VCO
20
GND
GPIO2
4
DVDD
5
DCPL
6
SI
7
SCLK
CC1175
LPF1
19 GND
GND
GROUND PAD
8
AVDD_RF
N.C.
RBIAS
16
AVDD_IF
15
13
14
CSn
DVDD
GPIO0
12
SO (GPIO1)
11
9
10
The CC1175 provides extensive hardware support for
packet handling, data buffering and burst
transmissions.
The
CC1175 main
operating
parameters can be controlled via an SPI interface.
In a typical system, the CC1175 will be used together
with a microcontroller and only few external passive
components.
31
The CC1175 is a fully integrated single-chip
transmitter designed for high performance at very
low power and low voltage operation in cost
effective wireless systems. All filters are integrated,
removing the need for costly external SAW and IF
filters. The device is mainly intended for the ISM
(Industrial, Scientific and Medical) and SRD (Short
Range Device) frequency bands at 164-192 MHz,
274-320 MHz, 410-480 MHz and 820-960 MHz.
32 EXT_XOSC
Description
18
N.C.
17
PA
PRODUCTION DATA information is current as of publication date. Products conform to
specifications per the terms of Texas Instruments standard warranty. Production processing does
not necessarily include testing of all parameters.
SWRS116C – REVISED MARCH 2013
Page 1 of 16
CC1175
Table of Contents
1
ELECTRICAL SPECIFICATIONS .................................................................................................... 3
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
1.10
1.11
1.12
1.13
1.14
1.15
ABSOLUTE MAX RATINGS ................................................................................................................ 3
GENERAL CHARACTERISTICS ............................................................................................................ 3
RF CHARACTERISTICS ...................................................................................................................... 3
REGULATORY STANDARDS ............................................................................................................... 4
CURRENT CONSUMPTION, STATIC MODES ........................................................................................ 5
CURRENT CONSUMPTION, TRANSMIT MODES ................................................................................... 5
TRANSMIT PARAMETERS................................................................................................................... 6
PLL PARAMETERS ............................................................................................................................ 7
WAKE-UP AND TIMING ..................................................................................................................... 8
HIGH SPEED CRYSTAL OSCILLATOR ................................................................................................. 8
HIGH SPEED CLOCK INPUT (TCXO) ................................................................................................. 8
32 KHZ CLOCK INPUT ....................................................................................................................... 8
LOW SPEED RC OSCILLATOR ............................................................................................................ 9
I/O AND RESET.................................................................................................................................. 9
TEMPERATURE SENSOR..................................................................................................................... 9
2
TYPICAL PERFORMANCE CURVES ............................................................................................ 10
3
PIN CONFIGURATION ..................................................................................................................... 12
4
BLOCK DIAGRAM ............................................................................................................................ 13
4.1
4.2
4.3
4.4
FREQUENCY SYNTHESIZER ............................................................................................................. 13
TRANSMITTER ................................................................................................................................. 13
RADIO CONTROL AND USER INTERFACE ......................................................................................... 13
LOW POWER / HIGH PERFORMANCE MODE ..................................................................................... 14
5
TYPICAL APPLICATION CIRCUIT ............................................................................................... 15
6
HISTORY ............................................................................................................................................. 16
PRODUCTION DATA information is current as of publication date. Products conform to
specifications per the terms of Texas Instruments standard warranty. Production processing does
not necessarily include testing of all parameters.
SWRS116C – REVISED MARCH 2013
Page 2 of 16
CC1175
1
Electrical Specifications
All measurements performed on CC1120EM_868_915 rev.1.0.1, CC1120EM_955 rev.1.2.1, CC1120EM_420_470
rev.1.0.1 or CC1120EM_169 rev.1.2
1.1
Absolute Max Ratings
Parameter
Min
Typ
Max
Unit
Condition
Supply Voltage ("VDD")
-0.3
3.9
V
Storage Temperature Range
-40
125
°C
ESD
2000
V
HBM
ESD
500
V
CDM
VDD+0.3
Voltage on Any Digital Pin
-0.3
V
max 3.9
Voltage on Analog Pins (including
“DCPL” pins)
1.2
-0.3
2.0
V
Max
Unit
General Characteristics
Parameter
Min
Typ
Voltage Supply Range
2.0
3.6
V
Temperature Range
-40
85
°C
1.3
Condition
RF Characteristics
Parameter
Min
Typ
Max
Unit
820
960
MHz
410
480
MHz
274
320
MHz
164
192
MHz
Frequency Bands
Frequency Resolution
Condition
Please see application note AN115
“Using the CC112x/CC1175 at 274
to 320 MHz” for more information
30
Hz
In 820-960 MHz band
15
Hz
In 410-480 MHz band
6
Hz
In 164-192 MHz band
0
200
kbps
Packet mode
0
100
kbps
Transparent mode
Datarate
Datarate Step Size
1e-4
bps
PRODUCTION DATA information is current as of publication date. Products conform to
specifications per the terms of Texas Instruments standard warranty. Production processing does
not necessarily include testing of all parameters.
SWRS116C – REVISED MARCH 2013
Page 3 of 16
CC1175
1.4
Regulatory Standards
Performance Mode
Frequency Band
Suitable for compliance with
Comments
ARIB T-108
ARIB T-96
ETSI EN 300 220
ETSI EN 54-25
820 – 960 MHz
FCC PART 101
FCC PART 24 SUBMASK D
Performance also suitable for systems
targeting maximum allowed output
power in the respective bands, using a
range extender such as the CC1190
FCC PART 15.247
FCC PART 15.249
FCC PART 90 MASK G
High Performance
Mode
FCC PART 90 MASK J
ARIB T-67
ARIB RCR STD-30
410 – 480 MHz
ETSI EN 300 220
FCC PART 90 MASK D
Performance also suitable for systems
targeting maximum allowed output
power in the respective bands, using a
range extender
FCC PART 90 MASK G
164 – 192 MHz
ETSI EN 300 220
FCC PART 90 MASK D
Performance also suitable for systems
targeting maximum allowed output
power in the respective bands, using a
range extender
ETSI EN 300 220
820 – 960 MHz
FCC PART 15.247
FCC PART 15.249
Low Power Mode
410 – 480 MHz
ETSI EN 300 220
164 – 192 MHz
ETSI EN 300 220
PRODUCTION DATA information is current as of publication date. Products conform to
specifications per the terms of Texas Instruments standard warranty. Production processing does
not necessarily include testing of all parameters.
SWRS116C – REVISED MARCH 2013
Page 4 of 16
CC1175
1.5
Current Consumption, Static Modes
TA = 25°C, VDD = 3.0 V if nothing else stated
Parameter
Min
Typ
Max
0.3
1
Unit
Condition
µA
Power Down with Retention
0.5
µA
Low-power RC oscillator running
XOFF Mode
170
µA
Crystal oscillator / TCXO disabled
IDLE Mode
1.3
mA
Clock running, system waiting with
no radio activity
Unit
Condition
1.6
Current Consumption, Transmit Modes
950 MHz band (High Performance Mode)
TA = 25°C, VDD = 3.0 V if nothing else stated
Parameter
Min
Typ
Max
TX Current Consumption +10 dBm
37
mA
TX Current Consumption 0 dBm
26
mA
868/915/920 MHz bands (High Performance Mode)
TA = 25°C, VDD = 3.0 V if nothing else stated
Parameter
Min
Typ
Max
Unit
TX Current Consumption +14 dBm
45
mA
TX Current Consumption +10 dBm
34
mA
Condition
434 MHz band (High Performance Mode)
TA = 25°C, VDD = 3.0 V if nothing else stated
Parameter
Min
Typ
Max
Unit
TX Current Consumption +15 dBm
50
mA
TX Current Consumption +14 dBm
45
mA
TX Current Consumption +10 dBm
34
mA
Condition
170 MHz band (High Performance Mode)
TA = 25°C, VDD = 3.0 V if nothing else stated
Parameter
Min
Typ
Max
Unit
TX Current Consumption +15 dBm
54
mA
TX Current Consumption +14 dBm
49
mA
TX Current Consumption +10 dBm
41
mA
Condition
Low Power Mode
TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else stated
Parameter
Min
TX Current Consumption +10 dBm
Typ
32
Max
Unit
Condition
mA
PRODUCTION DATA information is current as of publication date. Products conform to
specifications per the terms of Texas Instruments standard warranty. Production processing does
not necessarily include testing of all parameters.
SWRS116C – REVISED MARCH 2013
Page 5 of 16
CC1175
1.7
Transmit Parameters
TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else stated
Parameter
Min
Max Output Power
Typ
Max
Unit
Condition
+12
dBm
At 950 MHz
+14
dBm
At 915/920 MHz
+15
dBm
At 915/920 MHz with VDD = 3.6 V
+15
dBm
At 868 MHz
+16
dBm
At 868 MHz with VDD = 3.6 V
+15
dBm
At 433 MHz
+16
dBm
At 433 MHz with VDD = 3.6 V
+15
dBm
At 170 MHz
+16
dBm
At 170 MHz with VDD = 3.6 V
-11
dBm
Within fine step size range
-40
dBm
Within coarse step size range
0.4
dB
Within fine step size range
-75
dBc
4-GFSK 9.6 kbps in 12.5 kHz
channel, measured in 100 Hz
bandwidth at 434 MHz (FCC Part 90
Mask D compliant)
-58
dBc
4-GFSK 9.6 kbps in 12.5 kHz
channel, measured in 8.75 kHz
bandwidth (ETSI 300 220 compliant)
-61
dBc
2-GFSK 2.4 kbps in 12.5 kHz
channel, 1.2 kHz deviation
< -60
dBm
Min Output Power
Output Power Step Size
Adjacent Channel Power
Spurious Emissions
(Not including harmonics)
Harmonics
2nd Harm, 170 MHz
3rd Harm, 170 MHz
2nd Harm, 433 MHz
3rd Harm, 433 MHz
2nd Harm, 450 MHz
3rd Harm, 450 MHz
2nd Harm, 868 MHz
3rd Harm, 868 MHz
2nd Harm, 915 MHz
3rd Harm, 915 MHz
4th Harm, 915 MHz
2nd Harm, 950 MHz
3rd Harm, 950 MHz
-39
-58
-56
-51
-60
-45
-40
-42
56
52
60
-58
-42
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBuV/m
dBuV/m
dBuV/m
dBm
dBm
Transmission at +14 dBm (or
maximum allowed in applicable band
where this is less than +14 dBm)
using TI reference design
Emissions measured according to
ARIB T-96 in 950 MHz band, ETSI
EN 300-220 in 170, 433 and 868
MHz bands and FCC part 15.247 in
450 and 915 MHz band
Fourth harmonic in 915 MHz band
will require extra filtering to meet
FCC requirements if transmitting in
long intervals (>50 ms periods)
Optimum Load Impedance
868 / 915 / 920 MHz bands
433 MHz band
169 MHz band
35 + j35
55 + j25
80 + j0
Ω
Ω
Ω
PRODUCTION DATA information is current as of publication date. Products conform to
specifications per the terms of Texas Instruments standard warranty. Production processing does
not necessarily include testing of all parameters.
SWRS116C – REVISED MARCH 2013
Page 6 of 16
CC1175
1.8
PLL Parameters
High Performance Mode
TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else stated
Parameter
Min
Phase Noise in 950 MHz Band
Phase Noise in 868/915/920 MHz Bands
Phase Noise in 433 MHz Band
Phase Noise in 170 MHz Band
Typ
Max
Unit
Condition
-99
dBc/Hz
± 10 kHz offset
-99
dBc/Hz
± 100 kHz offset
-123
dBc/Hz
± 1 MHz offset
-99
dBc/Hz
± 10 kHz offset
-100
dBc/Hz
± 100 kHz offset
-122
dBc/Hz
± 1 MHz offset
-106
dBc/Hz
± 10 kHz offset
-107
dBc/Hz
± 100 kHz offset
-127
dBc/Hz
± 1 MHz offset
-111
dBc/Hz
± 10 kHz offset
-116
dBc/Hz
± 100 kHz offset
-135
dBc/Hz
± 1 MHz offset
Unit
Condition
-90
dBc/Hz
± 10 kHz offset
-92
dBc/Hz
± 100 kHz offset
-124
dBc/Hz
± 1 MHz offset
-95
dBc/Hz
± 10 kHz offset
Low Power Mode
TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else stated
Parameter
Min
Phase Noise in 950 MHz Band
Phase Noise in 868/915 MHz Bands
Phase Noise in 433 MHz Band
Phase Noise in 170 MHz Band
Typ
Max
-95
dBc/Hz
± 100 kHz offset
-124
dBc/Hz
± 1 MHz offset
-98
dBc/Hz
± 10 kHz offset
-102
dBc/Hz
± 100 kHz offset
-129
dBc/Hz
± 1 MHz offset
-106
dBc/Hz
± 10 kHz offset
-110
dBc/Hz
± 100 kHz offset
-136
dBc/Hz
± 1 MHz offset
PRODUCTION DATA information is current as of publication date. Products conform to
specifications per the terms of Texas Instruments standard warranty. Production processing does
not necessarily include testing of all parameters.
SWRS116C – REVISED MARCH 2013
Page 7 of 16
CC1175
1.9
Wake-up and Timing
TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else stated
Parameter
Min
Powerdown to IDLE
Typ
Max
Unit
Condition
0.4
ms
Depends on crystal
166
µs
Calibration disabled
461
µs
Calibration enabled
296
µs
Calibrate when leaving TX enabled
0
µs
Calibrate when leaving TX disabled
0.4
ms
When using SCAL strobe
Unit
Condition
MHz
Note: It is recommended that the
crystal frequency is chosen so that
the RF channel(s) are >1 MHz away
from multiples of XOSC
IDLE to TX
TX to IDLE time
Frequency Synthesizer Calibration
1.10 High Speed Crystal Oscillator
TA = 25°C, VDD = 3.0 V if nothing else stated
Parameter
Min
Crystal Frequency
Typ
Max
32
Load Capacitance (CL)
44
10
pF
ESR
Ω
Simulated over operating conditions
ms
Depends on crystal
Max
Unit
Condition
MHz
60
Start-up Time
0.4
1.11 High Speed Clock Input (TCXO)
TA = 25°C, VDD = 3.0 V if nothing else stated
Parameter
Min
Typ
Clock Frequency
32
44
Clock input amplitude (peak-to-peak)
0.8
VDD
V
Simulated over operating conditions
1.12 32 kHz Clock Input
TA = 25°C, VDD = 3.0 V if nothing else stated
Parameter
Min
Clock Frequency
Typ
Max
32
32 kHz Clock Input Pin Input High Voltage
32 kHz Clock Input Pin Input Low Voltage
Unit
Condition
kHz
0.8×VDD
V
0.2×VDD
V
PRODUCTION DATA information is current as of publication date. Products conform to
specifications per the terms of Texas Instruments standard warranty. Production processing does
not necessarily include testing of all parameters.
SWRS116C – REVISED MARCH 2013
Page 8 of 16
CC1175
1.13 Low Speed RC Oscillator
TA = 25°C, VDD = 3.0 V if nothing else stated.
Parameter
Min
Typ
Max
Unit
Condition
Frequency
32/40
kHz
After Calibration (calibrated against
the high speed XOSC)
Frequency Accuracy After Calibration
±0.1
%
Relative to frequency reference (i.e.
32 MHz crystal or TCXO)
Initial Calibration Time
1.6
ms
1.14 I/O and Reset
TA = 25°C, VDD = 3.0 V if nothing else stated
Parameter
Min
Logic Input High Voltage
0.8×VDD
Typ
Unit
Condition
V
Logic Input Low Voltage
Logic Output High Voltage
Max
0.2×VDD
0.8×VDD
V
V
At 4 mA output load or less
Logic Output Low Voltage
0.2×VDD
Power-on Reset Threshold
1.3
V
V
Voltage on DVDD pin
1.15 Temperature Sensor
TA = 25°C, VDD = 3.0 V if nothing else stated
Parameter
Min
Temperature Sensor Range
-40
Typ
Max
85
Unit
Condition
°C
Temperature Coefficient
2.66
mV / °C
Change in sensor output voltage vs
change in temperature
Typical Output Voltage
794
mV
Typical sensor output voltage at
TA = 25°C, VDD = 3.0 V
VDD Coefficient
1.17
mV / V
Change in sensor output voltage vs
change in VDD
The CC1175 can be configured to provide a voltage proportional to temperature on GPIO1. Using
the information above, the temperature can be estimated by measuring this voltage. Please refer
to the CC1175 user guide for more information.
PRODUCTION DATA information is current as of publication date. Products conform to
specifications per the terms of Texas Instruments standard warranty. Production processing does
not necessarily include testing of all parameters.
SWRS116C – REVISED MARCH 2013
Page 9 of 16
CC1175
2
Typical Performance Curves
TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else stated
All measurements performed on CC1120EM_868_915 rev.1.0.1, CC1120EM_955 rev.1.2.1, CC1120EM_420_470
rev.1.0.1 or CC1120EM_169 rev.1.2 (fxosc = 32 MHz), and CC1125EM_868_915 rev.1.1.0, CC1125EM_420_470 rev.1.1.0,
CC1125EM_169 rev.1.1.0, CC1125EM-Cat1-868 (fxosc = 40 MHz)
Note that the "output power vs load impedance" plot was measured at the 50 Ω antenna connector
Output Power vs Temperature
Max Setting, 170 MHz, 3.6V
Output Power (dBm)
17
16.5
16
15.5
15
-40
0
40
80
Temperature (ºC)
Output Power at 868MHz
vs PA power setting
18
20
16
10
Output Power (dBm)
14
12
10
8
0
-10
-20
-30
-40
6
Supply Voltage (V)
PA power setting
TX Current at 868MHz
vs PA power setting
60
40
30
20
10
43
47
4B
53
4F
57
5B
63
5F
67
6B
73
6F
77
7B
0
7F
TX Current (mA)
50
PA power setting
PRODUCTION DATA information is current as of publication date. Products conform to
specifications per the terms of Texas Instruments standard warranty. Production processing does
not necessarily include testing of all parameters.
SWRS116C – REVISED MARCH 2013
Page 10 of 16
43
47
4B
53
4F
57
5B
63
5F
67
3.5
6B
3
73
6F
2.5
77
-50
2
7F
7B
Output Power (dBm)
Output Power vs Voltage
Max Setting, 170 MHz
CC1175
GPIO Output Low Voltage (mV)
GPIO Output Low Voltage vs Current Being Sinked
1400
1200
1000
800
600
400
200
0
0
5
10
15
20
25
Current (mA)
GPIO Output High Voltage vs Current Being Sourced
GPIO Output high Voltage (V)
3.1
2.9
2.7
2.5
2.3
2.1
1.9
1.7
1.5
0
5
10
15
20
25
30
35
Current (mA)
PRODUCTION DATA information is current as of publication date. Products conform to
specifications per the terms of Texas Instruments standard warranty. Production processing does
not necessarily include testing of all parameters.
SWRS116C – REVISED MARCH 2013
Page 11 of 16
30
35
CC1175
3
Pin Configuration
The CC1175 pin-out is shown in the table below.
Pin #
Pin name
Type / direction
Description
1
VDD_GUARD
Power
2.0 - 3.6 V VDD
2
RESET_N
Digital Input
Asynchronous, active-low digital reset
3
GPIO3
Digital Input/Output
General purpose IO
4
GPIO2
Digital Input/Output
General purpose IO
5
DVDD
Power
2.0 - 3.6 VDD to internal digital regulator
6
DCPL
Power
Digital regulator output to external decoupling capacitor
7
SI
Digital Input
Serial data in
8
SCLK
Digital Input
Serial data clock
9
SO(GPIO1)
Digital Input/Output
Serial data out (General purpose IO)
10
GPIO0
Digital Input/Output
General purpose IO
11
CSn
Digital Input
Active-low chip-select
12
DVDD
Power
2.0 - 3.6 V VDD
13
AVDD_IF
Power
2.0 - 3.6 V VDD
14
RBIAS
Analog
External high precision R
15
AVDD_RF
Power
2.0 - 3.6 V VDD
16
NC
17
PA
18
Not connected
19
Not connected
Analog
Single-ended TX output
GND1
Analog
Analog GND
20
GND0
Analog
Analog GND
21
DCPL_VCO
Power
Pin for external decoupling of VCO supply regulator
22
AVDD_SYNTH1
Power
2.0 - 3.6 V VDD
23
LPF0
Analog
External loopfilter components
24
LPF1
Analog
External loopfilter components
25
AVDD_PFD_CHP
Power
2.0 - 3.6 V VDD
26
DCPL_PFD_CHP
Power
Pin for external decoupling of PFD and CHP regulator
27
AVDD_SYNTH2
Power
2.0 - 3.6 V VDD
28
AVDD_XOSC
Power
2.0 - 3.6 V VDD
29
DCPL_XOSC
Power
Pin for external decoupling of XOSC supply regulator
30
XOSC_Q1
Analog
Crystal oscillator pin 1 (must be grounded if a TCXO or other
external clock connected to EXT_XOSC is used)
31
XOSC_Q2
Analog
Crystal oscillator pin 2 (must be left floating if a TCXO or other
external clock connected to EXT_XOSC is used)
32
EXT_XOSC
Digital Input
Pin for external XOSC input (must be grounded if a regular
XOSC connected to XOSC_Q1 and XOSC_Q2 is used)
-
GND
Ground Pad
The ground pad must be connected to a solid ground plane
PRODUCTION DATA information is current as of publication date. Products conform to
specifications per the terms of Texas Instruments standard warranty. Production processing does
not necessarily include testing of all parameters.
SWRS116C – REVISED MARCH 2013
Page 12 of 16
CC1175
4
Block Diagram
A system block diagram of CC1175 is shown Figure 4.1.
CC1175
Power on reset
4k byte
ROM
MARC
Main Radio Control Unit
Ultra low power 16 bit
MCU
SPI
Serial configuration
and data interface
CSn (chip select)
SI (serial input)
Interrupt and
IO handler
System bus
SO (serial output)
SCLK (serial clock)
Battery sensor /
temp sensor
Configuration and
status registers
128 byte
TX FIFO RAM
buffer
Packet handler
and FIFO control
(optional GPIO0-3)
RF and DSP frontend
Output power ramping and OOK / ASK modulation
14dBm high
efficiency PA
Fully integrated Fractional-N
Frequency Synthesizer
Modulator
PA
(optional autodetected
external XOSC / TCXO)
XOSC_Q1
Data interface with
signal chain access
XOSC
XOSC_Q2
Figure 4.1 : System Block Diagram
4.1
Frequency Synthesizer
At the heart of CC1175 there is a fully integrated, fractional-N, ultra high performance frequency
synthesizer. The frequency synthesizer is designed for excellent phase noise performance. The
system is designed to comply with the most stringent regulatory spectral masks at maximum
transmit power.
Either a crystal can be connected to XOSC_Q1 and XOSC_Q2, or a TCXO can be connected to
the EXT_XOSC input. The oscillator generates the reference frequency for the synthesizer, as
well as clocks for the digital part. If a TCXO is used, the CC1175 will automatically turn the TCXO on
and off when needed to support low power modes.
4.2
Transmitter
The CC1175 transmitter is based on direct synthesis of the RF frequency (in-loop modulation). To
achieve effective spectrum usage, CC1175 has extensive data filtering and shaping in TX to support
high throughput data communication in narrowband channels. The modulator also controls power
ramping to remove issues such as spectral splattering when driving external high power RF
amplifiers.
The modulator also controls the PA power level to support on/off keying (OOK) and amplitude
shift keying (ASK).
4.3
Radio Control and User Interface
The CC1175 digital control system is built around MARC (Main Radio Control) implemented using a
high performance 16 bit ultra low power MCU. MARC handles power modes, radio sequencing
and protocol timing.
A 4-wire SPI serial interface is used for configuration and data buffer access. The digital
baseband includes support for channel configuration, packet handling, and data buffering. The
host MCU can burst write data to TX FIFO and stay in power down until the RF packet has been
transmitted, greatly reducing the power consumption required from the host MCU.
PRODUCTION DATA information is current as of publication date. Products conform to
specifications per the terms of Texas Instruments standard warranty. Production processing does
not necessarily include testing of all parameters.
SWRS116C – REVISED MARCH 2013
Page 13 of 16
CC1175
The CC1175 radio control and user interface is designed from the widespread sub-GHz CC1101
transceiver to enable easy SW transition between the two platforms. The command strobes and
the main radio states are the same on the two platforms.
For legacy formats CC1175 also has support for two serial modes. In synchronous serial mode CC1175
provides the MCU with a bit clock for sampling input data. In transparent mode CC1175 samples the
input pin at a configurable rate.
4.4
Low Power / High Performance Mode
The CC1175 is highly configurable, enabling trade-offs between power and performance to be made
based on the needs of the application. This data sheet describes two modes - low power mode
and high performance mode - which represent configurations where the device is optimized for
either power or performance.
PRODUCTION DATA information is current as of publication date. Products conform to
specifications per the terms of Texas Instruments standard warranty. Production processing does
not necessarily include testing of all parameters.
SWRS116C – REVISED MARCH 2013
Page 14 of 16
CC1175
5
Typical Application Circuit
Very few external components are required for the operation of CC1175. A typical application circuit
is shown below. Note that it does not show how the board layout should be done, which will
greatly influence the RF performance of CC1175.
This section is meant as an introduction only. Note that decoupling capacitors for power pins are
not shown in the figure below.
Optional
vdd
25
AVDD_PFD_CHP
vdd
DCPL_PFD_CHP 26
vdd
AVDD_SYNTH2 27
DCPL_XOSC 29
1 VDD_GUARD
AVDD_XOSC 28
LPF1 24
2 RESET_N
vdd
LPF0 23
3 GPIO3
AVDD_SYNTH1 22
4 GPIO2
DCPL_VCO 21
CC1175
5 DVDD
6 DCPL
vdd
GND0 20
GND1
7 SI
19
N.C. 18
N.C.
16
AVDD_RF
15
vdd
vdd
13 AVDD_IF
vdd
14 RBIAS
12 DVDD
11 CSn
10 GPIO0
PA 17
9 SO (GPIO1)
8 SCLK
vdd
vdd
XOSC_Q1 30
EXT_XOSC 32
(optional control pin
from CC1175)
XOSC_Q2 31
32 MHz
crystal
XOSC/
TCXO
MCU connection
SPI interface and
optional gpio pins
Figure 5.1 : Typical Application Circuit
PRODUCTION DATA information is current as of publication date. Products conform to
specifications per the terms of Texas Instruments standard warranty. Production processing does
not necessarily include testing of all parameters.
SWRS116C – REVISED MARCH 2013
Page 15 of 16
CC1175
6
History
Revision
Date
Description / Changes
SWRS116C
March 2013
Added ARIB T-108 to list of regulations
Added optimum load impedance
Added missing unit "dBm" in output power section
Added temperature sensor data
Clarified how the typical performance curves have been measured
Pin CS_N renamed to CSn to comply with naming convention used in the user guide
Added support for higher frequency crystals / external TCXOs
Updated typical frequency of low frequency RCOSC to show that it scales with the
reference it is calibrated against (i.e. the high speed XOSC)
Clarified under max ratings that I/O voltages should not exceed device supply voltage by
more than 0.3 V
Various minor spelling errors corrected
SWRS116B
April 2012
Added ground pad on page 1 pin-out and pin description
Fixed typo in EM list: CC1120EM_420_970 is corrected to CC1120EM_420_470
Added TCXO clock input voltage requirement
Changed wording in some sections, and fixed various typos/case errors
Added 274 - 320 MHz band and pointed to app note for more info (added mention of 315
MHz band on front page)
Removed reflow temperature from abs max ratings
Moved ESR to max column
Added history section
SWRS116A
Nov. 2011
Initial release
PRODUCTION DATA information is current as of publication date. Products conform to
specifications per the terms of Texas Instruments standard warranty. Production processing does
not necessarily include testing of all parameters.
SWRS116C – REVISED MARCH 2013
Page 16 of 16
PACKAGE OPTION ADDENDUM
www.ti.com
7-Oct-2013
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
(2)
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
CC1175RHBR
ACTIVE
VQFN
RHB
32
3000
Green (RoHS CU NIPDAUAG Level-3-260C-168 HR
& no Sb/Br)
-40 to 85
CC1175
CC1175RHBT
ACTIVE
VQFN
RHB
32
250
Green (RoHS CU NIPDAUAG Level-3-260C-168 HR
& no Sb/Br)
-40 to 85
CC1175
CC1175RHMR
ACTIVE
VQFN
RHM
32
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
-40 to 85
CC1175
CC1175RHMT
ACTIVE
VQFN
RHM
32
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
-40 to 85
CC1175
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
7-Oct-2013
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
27-Jul-2013
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
CC1175RHBR
VQFN
RHB
32
3000
330.0
12.4
5.3
5.3
1.5
8.0
12.0
Q2
CC1175RHBT
VQFN
RHB
32
250
180.0
12.4
5.3
5.3
1.5
8.0
12.0
Q2
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
27-Jul-2013
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
CC1175RHBR
VQFN
RHB
32
3000
338.1
338.1
20.6
CC1175RHBT
VQFN
RHB
32
250
210.0
185.0
35.0
Pack Materials-Page 2
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