Taychipst ERA82-004 Schottky barrier diode Datasheet

ERA82-004
40V 0.6A
SCHOTTKY BARRIER DIODE
FEATURES
Low VF
Super high speed switching
High reliability by planer design
Ultra small package, possible for 5mm pitch automatic
insertion
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute maximum ratings
Item
Symbol
Conditions
Repetitive peak reverse voltage
VRRM
Average forward current
IF(AV)
Resistive load
Ta=60°C
Surge current
IFSM
Sine wave
10ms
Operating junction temperature
Storage temperature
Rating
Unit
40
V
0.6
A
25
A
Tj
-40 to +150
°C
Tstg
-40 to +150
°C
Max.
Unit
Electrical characteristics (Ta=25°C Unless otherwise specified )
Item
Symbol
Conditions
Forward voltage drop
VFM
IFM=0.6A
0.55
V
Reverse current
IRRM
VR=VRRM
1.0
mA
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ERA82-004
40V 0.6A
SCHOTTKY BARRIER DIODE
RATINGS AND CHARACTERISTIC CURVES
Forward Characteristic
ERA82-004
Reverse Characteristic
(typ.)
10
10
(typ.)
2
o
10
Tj=150 C
1
o
Reverse Current (mA)
Forward Current (A)
Tj=125 C
1
o
Tj=150 C
o
Tj=125 C
o
Tj=100 C
o
Tj=25 C
0
o
Tj=100 C
10
10
-1
-2
o
Tj= 25 C
IR
IF
0.1
10
10
0.01
0.0
0.1
0.2
0.3
VF
0.4
0.5
0.6
0.7
Forward Voltage
0.8
0.9
10
1.0
-3
-4
0
10
20
VR
(V)
30
40
Reverse Voltage
50
(V)
Reverse Power Dissipation
Forward Power Dissipation
1.4
0.6
Io
DC
360°
1.2
360°
o
0.4
Square wave λ =60
o
Square wave λ =120
o
Sine wave λ =180
0.3
o
Square wave λ=180
DC
0.2
PR
Forward Power Dissipation (W)
WF
Reverse Power Dissipation (W)
λ
0.5
0.1
VR
1.0
α
0.8
o
α =180
0.6
0.4
0.2
Per 1element
0.0
0.0
0.0
0.1
0.2
Io
0.3
0.4
0.5
Average Forward Current
0.6
0
0.7
5
10
15
VR
(A)
20
25
30
Reverse Voltage
35
40
45
(V)
Current Derating (Io-Ta)
Current Derating (Io-Ta)
0.8
1.0
VR=30V
o
Sine wave λ=180
0.9
360°
λ
Io
o
Square wave λ=180
o
Square wave λ =120
o
Square wave λ =60
0.6
0.8
(A)
(A)
0.7
VR=30V
0.5
DC
0.4
0.3
Average Output Current
Average Output Current
0.7
0.6
0.5
DC
o
Sine wave λ =180
o
Square wave λ=180
o
Square wave λ =120
0.4
0.3
o
Square wave λ=60
Io
Io
0.2
0.2
0.1
0.1
0.0
0.0
20
30
40
50
Ta
60
70
80
90
100 110 120 130 140 150 160
Ambient Temperature
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60
o
70
80
Tl
( C)
2 of 2
90
100
110
120
Lead Temperature
130
140
150
160
o
( C)
Web Site: www.taychipst.com
ERA82-004
40V 0.6A
SCHOTTKY BARRIER DIODE
Junction Capacitance Characteristic (typ.)
Surge Capability
1000
Peak Half - Wave Current
Junction Capacitance
(pF)
(A)
100
10
Cj
I FSM
100
1
10
10
1
100
VR
Reverse Voltage
(V)
Transient Thermal Impedance
2
Transient Thermal Impedance
(
o
C/W)
θ j-a
10
θ j-l
10
10
1
t
0
-3
10
-2
10
10
t
-1
Time
(sec.)
10
Time
10
Number of Cycles at 50Hz
(sec.)
0
1
10
10
2
100