HP ATF-511P8-TR1 High linearity enhancement mode Datasheet

Agilent ATF-511P8 High Linearity
Enhancement Mode [1]
Pseudomorphic HEMT in
2x2 mm2 LPCC [3] Package
Data Sheet
Features
• Single voltage operation
• High linearity and P1dB
• Low noise figure
Pin 8
Pin 7 (Drain)
Pin 6
Pin 5
Source
(Thermal/RF Gnd)
Description
Agilent Technologies’s
ATF-511P8 is a single-voltage
high linearity, low noise
E-pHEMT housed in an 8-lead
JEDEC-standard leadless
plastic chip carrier (LPCC [3])
package. The device is ideal as
a high linearity, low-noise,
medium-power amplifier. Its
operating frequency range is
from 50 MHz to 6 GHz.
Pin Connections and
Package Marking
Note:
1. Enhancement mode technology employs a
single positive Vgs, eliminating the need of
negative gate voltage associated with
conventional depletion mode devices.
2. Refer to reliability datasheet for detailed
MTTF data.
3. Conforms to JEDEC reference outline MO229
for DRP-N.
4. Linearity Figure of Merit (LFOM) is essentially
OIP3 divided by DC bias power.
Pin 2 (Gate)
• Small package size:
2.0 x 2.0 x 0.75 mm
Pin 3
• Point MTTF > 300 years [2]
Pin 4 (Source)
• MSL-1 and lead-free
Pin 1 (Source)
• Tape-and-reel packaging option
available
Bottom View
Pin 8
Pin 1 (Source)
The thermally efficient package
measures only 2 mm x 2 mm x
0.75 mm. Its backside
metalization provides excellent
thermal dissipation as well as
visual evidence of solder reflow.
The device has a Point MTTF of
over 300 years at a mounting
temperature of +85°C. All
devices are 100% RF & DC tested.
• Excellent uniformity in product
specifications
Pin 2 (Gate)
Pin 3
1Px
Pin 4 (Source)
Pin 7 (Drain)
Specifications
2 GHz; 4.5V, 200 mA (Typ.)
Pin 6
• 41.7 dBm output IP3
Pin 5
• 30 dBm output power at 1 dB gain
compression
Top View
Note:
Package marking provides orientation and
identification:
• 1.4 dB noise figure
“1P” = Device Code
“x” = Date code indicates the month of
manufacture.
• 12.1 dB LFOM [4]
• 14.8 dB gain
• 69% PAE
Applications
• Front-end LNA Q2 and Q3 driver or
pre-driver amplifier for Cellular/
PCS and WCDMA wireless
infrastructure
• Driver amplifier for WLAN,
WLL/RLL and MMDS applications
• General purpose discrete E-pHEMT
for other high linearity applications
ATF-511P8 Absolute Maximum Ratings[1]
Symbol
Parameter
Units
Absolute
Maximum
VDS
Drain–Source Voltage[2]
V
7
VGS
Gate–Source Voltage[2]
V
-5 to 1
VGD
Gate Drain Voltage[2]
V
-5 to 1
IDS
Drain Current[2]
A
1
IGS
Gate Current
mA
46
Pdiss
Total Power Dissipation[3]
W
3
Pin max.
RF Input Power[4]
dBm
+30
TCH
Channel Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to 150
θch_b
Thermal Resistance[5]
°C/W
33
Notes:
1. Operation of this device in excess of any one
of these parameters may cause permanent
damage.
2. Assumes DC quiescent conditions.
3. Board (package belly) temperatureTB is 25°C.
Derate 30 mW/°C for TB > 50°C.
4. With 10 Ohm series resistor in gate supply
and 3:1 VSWR.
5. Channel-to-board thermal resistance
measured using 150°C Liquid Crystal
Measurement method.
6. Device can safely handle +30dBm RF Input
Power provided IGS limited to 46mA. IGS at
P1dB drive level is bias circuit dependent.
Product Consistency Distribution Charts at 2 GHz, 4.5V, 200 mA [6,7]
0.8 V
900
Cpk = 1.66
Stdev = 0.6
200
800
160
600
120
+3 Std
-3 Std
120
500
-3 Std
0.6 V
400
80
200
0
0
0
2
4
40
40
0.5 V
100
6
8
35
41
38
44
47
OIP3 (dBm)
VDS (V)
150
160
Cpk = 3.03
Stdev = 1.85
120
90
-3 Std
+3 Std
-3 Std
80
+3 Std
60
40
30
0
0
14
15
16
GAIN (dB)
Figure 4. Gain
LSL = 13.5, Nominal = 14.8, USL = 16.5.
17
52
57
62
67
28
30
29
Figure 3. P1dB
LSL = 28.5, Nominal = 30.
Cpk = 1.4
Stdev = 0.31
120
0
P1dB (dBm)
Figure 2. OIP3
LSL = 38.5, Nominal = 41.7.
Figure 1. Typical I-V Curves
(Vgs = 0.1 per step).
72
77
82
PAE (%)
Figure 5. PAE
LSL = 52, Nominal = 68.9.
Notes:
6. Distribution data sample size is 400 samples taken from 4 different wafers and 3 different lots.
Future wafers allocated to this product may have nominal values anywhere between the upper and
lower limits.
7. Measurements are made on production test board, which represents a trade-off between optimal
OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements.
2
+3 Std
80
300
13
Cpk = 3.24
Stdev = 0.15
160
0.7 V
700
IDS (mA)
200
240
1000
31
ATF-511P8 Electrical Specifications
TA = 25°C, DC bias for RF parameters is Vds = 4.5V and Ids = 200 mA unless otherwise specified.
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Max.
Vgs
Operational Gate Voltage
Vds = 4.5V, Ids = 200 mA
V
0.25
0.51
0.8
Vth
Threshold Voltage
Vds = 4.5V, Ids = 32 mA
V
—
0.28
—
Idss
Saturated Drain Current
Vds = 4.5V, Vgs = 0V
µA
—
16.4
—
Gm
Transconductance
Vds = 4.5V, Gm = ∆Idss/∆Vgs;
∆Vgs = Vgs1 – Vgs2
Vgs1 = 0.55V, Vgs2 = 0.5V
mmho
—
2178
—
Igss
Gate Leakage Current
Vds = 0V, Vgs = -4.5V
µA
-27
-2
—
NF
Noise
Figure [1]
f = 2 GHz
f = 900 MHz
dB
dB
—
—
1.4
1.2
—
—
G
Gain[1]
f = 2 GHz
f = 900 MHz
dB
dB
13.5
—
14.8
17.8
16.5
—
OIP3
Output 3rd Order Intercept Point [1,2]
f = 2 GHz
f = 900 MHz
dBm
dBm
38.5
—
41.7
43
—
—
P1dB
Output 1dB Compressed [1]
f = 2 GHz
f = 900 MHz
dBm
dBm
28.5
—
30
29.6
—
—
PAE
Power Added Efficiency
f = 2 GHz
f = 900 MHz
%
%
52
—
68.9
68.6
—
—
ACLR
Adjacent Channel Leakage
Power Ratio [1,3]
Offset BW = 5 MHz
Offset BW = 10 MHz
dBc
dBc
—
—
-58.9
-62.7
—
—
Notes:
1. Measurements obtained using production test board described in Figure 6 and PAE tested at P1dB condition.
2. I ) 2 GHz OIP3 test condition: F1 = 2.0 GHz, F2 = 2.01 GHz and Pin = -5 dBm per tone.
II ) 900 MHz OIP3 test condition: F1 = 900 MHz, F2 = 910 MHz and Pin = -5 dBm per tone.
3. ACLR test spec is based on 3GPP TS 25.141 V5.3.1 (2002-06)
- Test Model 1
- Active Channels: PCCPCH + SCH + CPICH + PICH + SCCPCH + 64 DPCH (SF=128)
- Freq = 2140 MHz
- Pin = -5 dBm
- Channel Integrate Bandwidth = 3.84 MHz
4. Use proper bias, board, heatsink and derating designs to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and
application note for more details.
Input
50 Ohm
Transmission
Line and
Gate Bias T
(0.3 dB loss)
Input
Matching Circuit
Γ_mag = 0.69
Γ_ang = -164°
(1.1 dB loss)
DUT
Output
Matching Circuit
Γ_mag = 0.65
Γ_ang = -163°
(0.9 dB loss)
50 Ohm
Transmission
Line and
Drain Bias T
(0.3 dB loss)
Output
Figure 6. Block diagram of the 2 GHz production test board used for NF, Gain, OIP3 , P1dB and PAE and ACLR measurements. This circuit achieves a
trade-off between optimal OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements.
3
1.8 nH
2.7 nH
50 Ohm
.02 λ
1.2 pF
RF Input
110 Ohm
.03 λ
110 Ohm
.03 λ
50 Ohm
.02 λ
1.2 pF
RF Output
DUT
15 nH
47 nH
15 Ohm
2.2 µF
Drain
DC Supply
2.2 µF
Gate
DC Supply
Figure 7. Simplified schematic of production test board. Primary purpose is to show 15 Ohm series resistor placement in
gate supply. Transmission line tapers, tee intersections, bias lines and parasitic values are not shown.
Gamma Load and Source at Optimum OIP3 and P1dB Tuning Conditions
The device’s optimum OIP3 and P1dB measurements were determined using a load pull system at 4.5V,
200 mA quiesent bias:
Optimum OIP3
Freq
(GHz)
Gamma Source
Mag
Ang
Gamma Load
Mag
Ang
OIP3
(dBm)
Gain
(dB)
P1dB
(dBm)
PAE
(%)
0.9
0.776
152
0.549
-178
43.3
17.94
29.63
63.8
2.0
0.872
-171
0.683
-179
43.1
15.06
30.12
66.8
2.4
0.893
-162
0.715
-174
42.8
14.03
29.90
64.5
3.9
0.765
-132
0.574
-144
41.7
9.47
29.02
52
Optimum P1dB
Freq
(GHz)
Gamma Source
Mag
Ang
Gamma Load
Mag
Ang
OIP3
(dBm)
Gain
(dB)
P1dB
(dBm)
PAE
(%)
0.9
0.773
153
0.784
-173
38.0
19.28
31.9
54.23
2.0
0.691
147
0.841
-166
36.4
10.34
31.4
38.15
2.4
0.797
164
0.827
-166
36.2
8.43
31.2
37.38
3.9
0.602
-163
0.794
-155
35.4
7.03
31
32.72
4
50
50
45
45
40
40
35
35
25
4.5 V
4V
3V
20
15
50
150
250
350
450
P1dB (dBm)
30
10
35
30
OIP3 (dBm)
OIP3 (dBm)
ATF-511P8 Typical Performance Curves (at 25°C unless specified otherwise)
Tuned for Optimal OIP3 at 4.5V 200 mA
30
25
4.5 V
4V
3V
20
10
550
10
50
150
250
25
20
4.5 V
4V
3V
50
550
350
20
16
19
15
18
14
13
4.5 V
4V
3V
11
450
550
70
60
60
50
50
40
30
150
250
350
450
0
450
550
Idq (mA)
Figure 14. PAE vs. Idq and VDS at 2 GHz.
Note:
Bias current for the above charts are quiescent
conditions. Actual level may increase or
decrease depending on amount of RF drive.
450
550
Figure 13. Gain vs. IDS and VDS at 900 MHz.
45
40
50
150
40
35
-40 °C
25 °C
85 °C
30
4.5 V
4V
3V
25
0
350
350
IDS (mA)
10
250
250
50
20
10
150
150
50
550
30
4.5 V
4V
3V
50
4.5 V
4V
3V
14
OIP3 (dBm)
70
PAE (%)
80
550
16
15
Figure 12. Gain vs. IDS and VDS at 2 GHz.
80
450
17
IDS (mA)
Figure 11. P1dB vs. Idq and VDS at 900 MHz.
350
13
50
Idq (mA)
20
250
Figure 10. P1dB vs. Idq and VDS at 2 GHz.
10
250
150
Idq (mA)
17
12
10
PAE (%)
450
GAIN (dB)
GAIN (dB)
P1dB (dBm)
30
5
350
Figure 9. OIP3 vs. IDS and VDS at 900 MHz.
35
150
4.5 V
4V
3V
15
IDS (mA)
Figure 8. OIP3 vs. IDS and VDS at 2 GHz.
50
20
15
IDS (mA)
15
25
250
350
450
550
Idq (mA)
Figure 15. PAE vs. Idq and VDS at 900 MHz.
20
0.5
1
1.5
2
2.5
3
FREQUENCY (GHz)
Figure 16. OIP3 vs. Temp and Freq.
3.5
4
ATF-511P8 Typical Performance Curves, continued (at 25°C unless specified otherwise)
Tuned for Optimal OIP3 at 4.5V, 200 mA
35
20
80
70
30
20
-40 °C
25 °C
85 °C
15
60
PAE (%)
25
GAIN (dB)
P1dB (dBm)
15
10
-40 °C
25 °C
85 °C
5
50
40
30
-40 °C
25 °C
85 °C
20
10
10
0.5
1
1.5
2
2.5
3
3.5
0
0.5
4
1
1.5
FREQUENCY (GHz)
2
2.5
3
3.5
0
0.5
4
1
1.5
FREQUENCY (GHz)
Figure 17. P1dB vs. Temp and Freq.
2
2.5
3
3.5
4
FREQUENCY (GHz)
Figure 18. Gain vs. Temp and Freq.
Figure 19. PAE vs. Temp and Freq.
50
45
45
40
40
35
35
30
25
4.5 V
4V
3V
20
15
10
150
250
350
450
30
30
25
4.5 V
4V
3V
20
15
10
50
35
P1dB (dBm)
50
OIP3 (dBm)
OIP3 (dBm)
ATF-511P8 Typical Performance Curves (at 25°C unless specified otherwise)
Tuned for Optimal P1dB at 4.5 V, 200 mA
550
150
25
20
50
550
150
450
550
Idq (mA)
Figure 23. P1dB vs. Idq and VDS at 900 MHz.
Note:
Bias current for the above charts are quiescent
conditions. Actual level may increase or
decrease depending on amount of RF drive.
250
350
450
550
Idq(mA)
Figure 22. P1dB vs. Idq and VDS at 2 GHz.
22
10
20
8
18
6
16
14
4.5 V
4V
3V
2
10
6
450
12
4
4.5 V
4V
3V
350
350
GAIN (dB)
GAIN (dB)
P1dB (dBm)
30
250
250
Figure 21. OIP3 vs. IDS and VDS at 900 MHz.
35
150
4.5 V
4V
3V
15
IDS (mA)
Figure 20. OIP3 vs. IDS and VDS at 2 GHz.
50
20
10
50
IDS (mA)
15
25
4.5 V
4V
3V
12
10
0
50
150
250
350
450
IDS (mA)
Figure 24. Gain vs. IDS and VDS at 2 GHz.
550
50
150
250
350
450
550
IDS (mA)
Figure 25. Gain vs. IDS and VDS at 900 MHz.
ATF-511P8 Typical Performance Curves, continued (at 25°C unless specified otherwise)
Tuned for Optimal P1dB at 4.5V, 200 mA
50
45
70
60
40
40
20
OIP3 (dBm)
PAE (%)
PAE (%)
50
30
40
35
30
30
4.5 V
4V
3V
10
4.5 V
4V
3V
20
10
0
50
150
250
350
450
550
50
150
250
Idq (mA)
350
450
20
0.5
550
1
Figure 27. PAE vs. Idq and VDS at 900 MHz.
40
1.5
2
2.5
3
3.5
4
3.5
4
FREQUENCY (GHz)
Idq (mA)
Figure 26. PAE vs. Idq and VDS at 2 GHz.
Figure 28. OIP3 vs. Temp and Freq.
20
70
60
35
15
50
25
PAE (%)
30
GAIN (dB)
P1dB (dBm)
-40 °C
25 °C
85 °C
25
10
40
30
20
-40 °C
25 °C
85 °C
15
10
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
Figure 29. P1dB vs. Temp and Freq.
Note:
Bias current for the above charts are quiescent
conditions. Actual level may increase or
decrease depending on amount of RF drive.
7
20
5
0
0.5
-40 °C
25 °C
85 °C
1
1.5
-40 °C
25 °C
85 °C
10
2
2.5
3
FREQUENCY (GHz)
Figure 30. Gain vs. Temp and Freq.
3.5
4
0
0.5
1
1.5
2
2.5
3
FREQUENCY (GHz)
Figure 31. PAE vs. Temp and Freq.
ATF-511P8 Typical Scattering Parameters, VDS = 4.5V, IDS = 300 mA
Freq.
GHz
Mag.
S11
Ang.
dB
S21
Mag.
Ang.
dB
S12
Mag.
Ang.
S22
Mag. Ang.
MSG/MAG
dB
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.5
2
2.5
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
0.94
0.93
0.93
0.93
0.92
0.93
0.92
0.93
0.92
0.93
0.93
0.93
0.92
0.92
0.92
0.91
0.91
0.91
0.91
0.91
0.90
0.89
0.89
0.89
0.90
0.90
0.89
0.83
0.86
-134.9
-157.7
-166.6
-171.8
-173.9
-176.9
-178.8
178.7
177.1
175.7
168.7
163.0
157.8
152.5
142.8
133.2
124.6
115.7
106.0
95.5
85.2
74.3
63.0
54.1
46.3
40.6
33.3
25.4
20.0
31.16
25.64
22.26
19.78
18.70
17.12
15.78
14.61
13.58
12.64
8.99
6.36
4.40
2.73
0.03
-2.17
-4.21
-5.80
-6.82
-7.36
-7.98
-8.69
-9.25
-9.80
-10.25
-10.86
-11.16
-11.81
-12.07
36.15
19.14
12.97
9.74
8.60
7.18
6.15
5.37
4.77
4.28
2.81
2.08
1.66
1.36
1.00
0.77
0.61
0.51
0.45
0.42
0.40
0.38
0.35
0.32
0.31
0.30
0.32
0.24
0.24
111.2
99.2
94.2
90.9
88.9
86.1
84.3
82.3
80.6
79.1
71.4
64.2
57.2
50.4
37.6
24.2
14.1
5.6
-2.6
-10.2
-22.2
-29.1
-40.1
-51.7
-55.2
-57.3
-71.1
-75.3
-90.5
-38.53
-37.87
-37.61
-37.09
-36.15
-35.80
-35.41
-35.11
-35.00
-34.46
-32.70
-31.27
-29.90
-28.59
-26.69
-25.30
-24.32
-23.48
-22.49
-21.39
-20.50
-19.72
-19.42
-19.12
-18.65
-18.57
-18.02
-17.65
-17.43
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.02
0.02
0.03
0.03
0.04
0.05
0.06
0.06
0.07
0.08
0.09
0.10
0.10
0.11
0.11
0.11
0.12
0.13
0.13
29.7
21.8
21.1
23.4
25.4
27.0
29.5
32.5
33.1
35.0
40.0
42.3
42.5
41.6
35.7
29.8
23.7
19.5
14.1
8.5
0.4
-8.4
-17.1
-23.9
-29.7
-35.8
-42.3
-47.1
-53.1
0.73
0.76
0.78
0.78
0.75
0.75
0.75
0.76
0.75
0.76
0.76
0.76
0.76
0.75
0.74
0.71
0.65
0.59
0.56
0.58
0.60
0.63
0.65
0.67
0.69
0.69
0.71
0.73
0.76
34.79
31.68
29.99
28.43
27.31
26.52
25.59
24.75
24.24
23.53
20.88
17.20
14.71
12.65
9.96
7.23
4.97
3.02
1.86
1.19
0.53
-0.04
-0.61
-1.04
-1.13
-1.88
-2.26
-3.17
-3.76
MSG/MAG & |S21|2 (dB)
40
Notes:
1. S parameter is measured on a microstrip line
made on 0.025 inch thick alumina carrier. The
input reference plane is at the end of the gate
lead. The output reference plane is at the end
of the drain lead.
30
MSG
20
10
MAG
0
S21
-10
-20
0
5
10
15
FREQUENCY (GHz)
Figure 32. MSG/MAG & |S21|2 (dB)
@ 4.5V, 300 mA.
8
20
-164.5
-173.7
-176.8
-179.9
178.9
176.9
175.5
174.0
172.8
171.6
166.0
160.6
155.5
149.7
138.6
127.2
117.2
111.3
108.2
103.7
96.0
87.2
77.6
68.2
58.7
50.1
41.8
35.1
27.7
ATF-511P8 Typical Scattering Parameters, VDS = 4.5V, IDS = 200 mA
Freq.
GHz
Mag.
S11
Ang.
dB
S21
Mag.
Ang.
dB
S12
Mag.
Ang.
S22
Mag. Ang.
MSG/MAG
dB
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.5
2
2.5
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
0.94
0.93
0.94
0.93
0.92
0.92
0.92
0.92
0.93
0.92
0.93
0.93
0.92
0.93
0.91
0.91
0.91
0.90
0.90
0.91
0.91
0.89
0.89
0.89
0.90
0.90
0.91
0.85
0.87
-132.6
-156.3
-165.6
-170.8
-173.1
-176.2
-178.2
179.4
177.4
176.0
168.9
163.6
157.9
152.6
143.1
133.7
124.7
115.7
105.6
95.7
84.9
74.0
63.1
54.0
46.4
38.8
33.1
26.8
19.3
31.26
25.79
22.40
19.93
18.84
17.26
15.92
14.76
13.72
12.77
9.13
6.49
4.50
2.81
0.16
-2.08
-4.02
-5.75
-6.77
-7.45
-7.95
-8.29
-9.19
-9.74
-10.17
-10.85
-10.77
-11.05
-11.53
36.54
19.47
13.18
9.92
8.75
7.29
6.25
5.47
4.85
4.34
2.86
2.11
1.67
1.38
1.01
0.78
0.62
0.51
0.45
0.42
0.40
0.38
0.34
0.326
0.31
0.28
0.28
0.28
0.26
112.1
99.6
94.4
91.1
89.0
86.2
84.3
82.3
80.4
79.1
70.9
63.7
56.8
49.3
35.8
22.7
12.0
3.3
-3.9
-12.1
-22.4
-32.0
-39.5
-51.1
-58.1
-67.8
-73.7
-83.3
-100.4
-37.40
-36.68
-36.47
-36.17
-35.11
-34.84
-34.72
-34.37
-34.02
-33.71
-32.20
-30.97
-29.65
-28.54
-26.68
-25.40
-24.42
-23.61
-22.73
-21.60
-20.76
-19.93
-19.45
-19.03
-18.78
-18.47
-18.19
-17.88
-17.54
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.02
0.02
0.02
0.02
0.03
0.03
0.04
0.05
0.06
0.06
0.07
0.08
0.09
0.10
0.10
0.11
0.11
0.11
0.12
0.12
0.13
27.2
19.2
19.9
19.9
24.6
23.9
25.6
27.6
28.6
30.8
35.0
38.2
39.1
38.1
33.9
28.0
22.3
18.2
14.4
8.4
0.9
-8.6
-16.8
-24.1
-30.7
-36.1
-42.9
-47.5
-53.8
0.70
0.74
0.76
0.76
0.73
0.73
0.73
0.74
0.74
0.74
0.74
0.74
0.74
0.74
0.73
0.70
0.65
0.58
0.54
0.55
0.58
0.61
0.64
0.67
0.68
0.68
0.71
0.73
0.75
34.49
31.13
29.44
27.93
26.87
26.08
25.41
24.59
23.85
23.16
20.59
17.50
14.78
13.16
9.84
7.34
5.01
2.77
1.56
1.13
0.82
-0.05
-0.82
-1.38
-1.33
-1.80
-2.11
-2.60
-2.83
Notes:
1. S parameter is measured on a microstrip line
made on 0.025 inch thick alumina carrier. The
input reference plane is at the end of the gate
lead. The output reference plane is at the end
of the drain lead.
30
MSG
2
MSG/MAG & |S21| (dB)
40
20
10
MAG
0
S21
-10
-20
0
5
10
15
FREQUENCY (GHz)
Figure 33. MSG/MAG & |S21|2 (dB)
@ 4.5V, 200 mA.
9
20
-161.0
-171.6
-175.6
-178.8
179.9
177.8
176.2
174.7
173.4
172.2
166.5
161.1
155.9
150.2
139.0
127.4
117.0
110.2
107.5
103.9
97.0
88.4
78.9
69.1
59.6
50.9
42.0
35.3
27.3
ATF-511P8 Typical Scattering Parameters, VDS = 4.5V, IDS = 100 mA
Freq.
GHz
Mag.
S11
Ang.
dB
S21
Mag.
Ang.
dB
S12
Mag.
Ang.
S22
Mag. Ang.
MSG/MAG
dB
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.5
2
2.5
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
0.93
0.93
0.93
0.92
0.91
0.91
0.92
0.92
0.92
0.91
0.92
0.91
0.91
0.91
0.91
0.91
0.90
0.90
0.90
0.90
0.9
0.89
0.90
0.89
0.90
0.88
0.90
0.86
0.86
-125.4
-152.1
-162.8
-168.7
-170.8
-174.4
-176.8
-179.0
178.7
177.0
169.8
163.9
158.8
153.0
143.7
134.0
125.0
115.7
106.4
96.5
86.1
75.4
63.8
54.7
46.5
40.2
33.5
26.4
19.3
30.99
25.70
22.34
19.90
18.78
17.21
15.88
14.72
13.69
12.73
9.11
6.49
4.52
2.89
0.20
-2.08
-4.20
-6.04
-7.35
-8.14
-8.45
-9.46
-9.59
-10.42
-10.99
-11.15
-11.50
-11.50
-11.51
35.43
19.27
13.09
9.88
8.68
7.25
6.22
5.44
4.83
4.33
2.85
2.11
1.68
1.39
1.02
0.78
0.61
0.49
0.42
0.39
0.37
0.33
0.33
0.30
0.28
0.27
0.26
0.26
0.26
115.3
101.4
95.5
91.8
89.5
86.6
84.4
82.3
80.4
78.8
70.2
62.8
55.2
47.7
33.1
19.2
7.3
-1.6
-7.7
-16.4
-25.3
-35.2
-46.1
-52.9
-59.8
-70.6
-71.7
-80.8
-92.6
-34.72
-33.88
-33.70
-33.49
-32.50
-32.42
-32.20
-32.13
-32.02
-31.85
-30.95
-30.00
-29.22
-28.39
-26.77
-25.62
-24.73
-23.99
-23.23
-22.04
-20.89
-20.08
-19.41
-19.02
-18.87
-18.71
-18.22
-18.28
-17.88
0.01
0.02
0.02
0.02
0.02
0.02
0.02
0.02
0.02
0.02
0.02
0.03
0.03
0.03
0.04
0.05
0.05
0.06
0.06
0.07
0.09
0.09
0.10
0.11
0.11
0.11
0.12
0.12
0.12
28.6
18.9
15.5
16.5
17.7
17.6
19.1
18.8
18.9
20.6
24.8
27.8
29.0
29.0
27.2
22.2
17.3
14.3
11.2
7.2
0.5
-7.5
-16.7
-25.1
-31.7
-38.2
-45.5
-49.0
-54.8
0.65
0.70
0.72
0.72
0.69
0.7
0.7
0.70
0.70
0.70
0.70
0.71
0.71
0.71
0.70
0.68
0.64
0.56
0.51
0.51
0.54
0.58
0.62
0.65
0.67
0.68
0.70
0.72
0.74
32.94
29.84
27.95
26.73
25.59
24.80
23.96
23.38
22.86
22.22
20.08
18.19
14.84
12.76
9.92
7.42
4.79
2.45
0.71
0.01
-0.37
-1.33
-1.60
-1.93
-2.12
-2.66
-2.83
-3.33
-3.69
MSG/MAG & |S21|2 (dB)
40
Notes:
1. S parameter is measured on a microstrip line
made on 0.025 inch thick alumina carrier. The
input reference plane is at the end of the gate
lead. The output reference plane is at the end
of the drain lead.
30
MSG
20
10
MAG
0
S21
-10
-20
0
5
10
15
FREQUENCY (GHz)
Figure 34. MSG/MAG & |S21|2 (dB)
@ 4.5V, 100 mA.
10
20
-151.1
-166.3
-172.2
-176.0
-177.2
-179.7
178.3
176.6
175.2
173.8
167.8
162.3
157.2
151.6
140.4
128.7
117.4
109.1
106.4
105.0
99.3
90.9
81.3
71.3
61.4
52.4
43.3
35.9
27.9
ATF-511P8 Typical Scattering Parameters, VDS = 4V, IDS = 200 mA
Freq.
GHz
Mag.
S11
Ang.
dB
S21
Mag.
Ang.
dB
S12
Mag.
Ang.
S22
Mag. Ang.
MSG/MAG
dB
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.5
2
2.5
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
0.94
0.93
0.93
0.94
0.93
0.93
0.93
0.92
0.92
0.93
0.92
0.93
0.92
0.92
0.92
0.91
0.92
0.91
0.91
0.90
0.92
0.90
0.91
0.90
0.94
0.87
0.89
0.89
0.88
-133.7
-156.9
-165.9
-170.9
-174.5
-175.8
-178.2
179.7
178.0
176.3
169.6
164.4
159.6
154.2
144.9
135.5
126.6
117.1
108.2
99.1
89.2
79.6
70.9
62.2
53.8
45.0
37.7
30.5
25.4
30.85
25.31
21.89
19.48
17.53
16.77
15.53
14.28
13.21
12.34
8.63
6.12
4.07
2.30
-0.31
-2.55
-4.30
-5.64
-6.81
-7.13
-7.76
-8.39
-8.92
-9.42
-9.84
-10.51
-10.74
-10.03
-11.77
34.87
18.41
12.43
9.42
7.52
6.89
5.97
5.17
4.57
4.13
2.70
2.02
1.59
1.30
0.96
0.74
0.60
0.52
0.45
0.44
0.40
0.38
0.35
0.33
0.32
0.29
0.29
0.31
0.25
111.4
99.5
94.2
90.9
88.8
86.0
84.2
82.5
80.5
78.6
71.0
63.5
57.0
50.3
37.4
25.4
15.1
6.50
-2.8
-13.7
-21.2
-30.0
-42.9
-48.9
-60.1
-68.5
-72.4
-85.1
-91.8
-37.28
-36.61
-36.19
-35.98
-35.84
-34.69
-34.42
-34.11
-33.77
-33.66
-32.21
-30.69
-29.46
-28.47
-26.48
-25.14
-24.15
-23.20
-22.06
-21.10
-20.40
-19.67
-19.28
-19.11
-18.86
-18.58
-18.59
-17.88
-17.72
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.02
0.02
0.02
0.02
0.02
0.03
0.03
0.04
0.05
0.06
0.06
0.07
0.08
0.09
0.10
0.10
0.11
0.11
0.11
0.11
0.12
0.13
28.2
20.4
20.2
20.4
23.0
23.5
25.0
27.1
29.2
29.6
34.5
38.0
39.4
37.7
33.8
28.4
23.4
18.3
12.3
5.2
-2.7
-11.0
-19.9
-27.2
-33.1
-38.4
-43.7
-48.3
-59.0
0.73
0.76
0.78
0.78
0.78
0.76
0.75
0.76
0.76
0.76
0.76
0.76
0.76
0.75
0.73
0.69
0.64
0.62
0.62
0.62
0.64
0.65
0.66
0.67
0.68
0.7
0.71
0.73
0.74
33.96
30.89
28.90
27.70
26.73
25.83
24.98
24.13
23.60
22.95
20.34
17.32
14.52
12.34
9.75
6.74
5.17
3.27
2.03
1.60
1.40
0.26
0.15
-0.69
-1.20
-1.56
-1.97
-2.50
-2.82
MSG/MAG & |S21|2 (dB)
40
Notes:
1. S parameter is measured on a microstrip line
made on 0.025 inch thick alumina carrier. The
input reference plane is at the end of the gate
lead. The output reference plane is at the end
of the drain lead.
30
MSG
20
10
MAG
0
S21
-10
-20
0
5
10
15
FREQUENCY (GHz)
Figure 35. MSG/MAG & |S21|2 (dB)
@ 4V, 200 mA.
11
20
-162.5
-172.6
-176.3
-179.5
178.5
177.3
175.5
173.9
172.5
171.4
165.3
159.2
154.1
148.6
137.1
127.3
119.4
114.5
108.5
100.8
90.4
79.3
67.0
57.1
48.7
40.0
36.3
28.8
19.5
ATF-511P8 Typical Scattering Parameters, VDS = 3V, IDS = 200 mA
Freq.
GHz
Mag.
S11
Ang.
dB
S21
Mag.
Ang.
dB
S12
Mag.
Ang.
S22
Mag. Ang.
MSG/MAG
dB
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.5
2
2.5
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
0.95
0.94
0.94
0.94
0.93
0.93
0.93
0.93
0.93
0.93
0.93
0.93
0.93
0.92
0.93
0.92
0.93
0.91
0.91
0.90
0.92
0.92
0.91
0.91
0.92
0.88
0.87
0.83
0.85
-137.1
-159.0
-167.3
-172.0
-175.3
-176.8
-178.7
179.1
177.3
176.1
169.4
164.0
159.1
154.0
144.8
135.2
126.0
116.6
107.4
98.4
89.0
79.5
70.1
61.9
51.8
44.1
36.4
30.1
24.0
29.51
23.89
20.46
18.04
16.10
15.36
14.14
12.87
11.82
10.91
7.24
4.75
2.73
0.93
-1.58
-3.78
-5.54
-7.07
-7.66
-8.06
-8.99
-9.12
-9.28
-9.71
-10.04
-10.01
-10.16
-10.61
-11.96
29.89
15.65
10.54
7.98
6.38
5.86
5.09
4.4
3.89
3.51
2.30
1.72
1.36
1.11
0.83
0.64
0.52
0.44
0.41
0.39
0.35
0.35
0.34
0.32
0.31
0.31
0.31
0.31
0.25
109.9
98.7
93.8
90.7
88.7
85.9
84.2
82.6
80.6
78.9
71.8
64.7
58.5
51.6
38.7
27.3
17.2
10.5
2.06
-5.6
-15.9
-25.8
-35.9
-39.9
-54.7
-59.8
-77.5
-87.2
-97.4
-36.88
-36.27
-36.20
-35.82
-35.59
-34.34
-34.27
-34.12
-33.66
-33.55
-31.97
-30.60
-29.39
-28.15
-26.26
-24.91
-24.05
-23.11
-22.08
-21.04
-20.23
-19.45
-19.08
-18.93
-18.89
-18.63
-18.83
-18.17
-17.69
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.02
0.02
0.02
0.02
0.03
0.03
0.03
0.04
0.05
0.06
0.07
0.07
0.08
0.09
0.10
0.11
0.11
0.11
0.11
0.11
0.12
0.13
25.2
19.8
18.0
20.5
22.4
24.0
24.8
27.1
29.1
29.3
35.4
38.5
38.5
37.4
33.1
27.7
22.1
17.2
12.1
5.0
-2.7
-12.4
-21.4
-29.2
-35.6
-40.7
-44.7
-51.2
-58.3
0.78
0.81
0.82
0.83
0.83
0.81
0.81
0.81
0.81
0.81
0.81
0.81
0.81
0.80
0.78
0.74
0.68
0.63
0.62
0.63
0.64
0.66
0.68
0.69
0.70
0.72
0.73
0.74
0.75
33.29
30.18
28.47
26.98
25.75
24.89
24.28
23.42
22.69
22.23
19.64
16.34
14.08
11.72
9.24
6.28
4.39
1.96
1.32
0.60
0.49
0.19
-0.19
-0.68
-0.40
-1.57
-1.85
-2.42
-3.71
MSG/MAG & |S21|2 (dB)
40
Notes:
1. S parameter is measured on a microstrip line
made on 0.025 inch thick alumina carrier. The
input reference plane is at the end of the gate
lead. The output reference plane is at the end
of the drain lead.
30
MSG
20
10
MAG
0
S21
-10
-20
0
5
10
15
FREQUENCY (GHz)
Figure 36. MSG/MAG & |S21|2 (dB)
@ 3V, 200 mA.
12
20
-166.0
-174.5
-177.6
179.4
177.6
176.3
174.6
173.1
171.7
170.7
164.6
158.5
153.4
147.6
135.8
125.0
115.6
110.7
106.3
99.5
89.8
78.7
66.3
56.4
47.9
39.0
35.3
27.7
18.3
Device Models
Refer to Agilent’s Web Site
www.agilent.com/view/rf
Ordering Information
Part Number
No. of Devices
Container
ATF-511P8-TR1
3000
7” Reel
ATF-511P8-TR2
10000
13”Reel
ATF-511P8-BLK
100
antistatic bag
2 x 2 LPCC (JEDEC DFP-N) Package Dimensions
D1
D
pin1
P
pin1
8
1
2
e
E1
3
R
1PX
4
5
Top View
Bottom View
A1
A
A2
End View
Side View
DIMENSIONS
SYMBOL
A
A1
A2
b
D
D1
E
E1
e
P
L
MIN.
0.70
0
0.203 REF
0.225
1.9
0.65
1.9
1.45
0.50 BSC
0.20
0.35
NOM.
0.75
0.02
0.203 REF
0.25
2.0
0.80
2.0
1.6
0.50 BSC
0.25
0.40
DIMENSIONS ARE IN MILLIMETERS
13
E
6
b
L
A
7
MAX.
0.80
0.05
0.203 REF
0.275
2.1
0.95
2.1
1.75
0.50 BSC
0.30
0.45
PCB Land Pattern and Stencil Design
2.72 (107.09)
2.80 (110.24)
0.70 (27.56)
0.63 (24.80)
0.25 (9.84)
0.22 (8.86)
0.25 (9.84)
PIN 1
φ0.20 (7.87)
Solder
mask
RF
transmission
line
+
0.32 (12.79)
PIN 1
0.50 (19.68)
0.50 (19.68)
1.60 (62.99)
0.28 (10.83)
0.25 (9.74)
0.60 (23.62)
1.54 (60.61)
0.63 (24.80)
0.72 (28.35)
0.80 (31.50)
0.15 (5.91)
0.55 (21.65)
Stencil Layout (top view)
PCB Land Pattern (top view)
Notes:
Typical stencil thickness is 5 mils.
Measurements are in millimeters (mils).
Device Orientation
4 mm
REEL
8 mm
CARRIER
TAPE
USER
FEED
DIRECTION
COVER TAPE
14
1PX
1PX
1PX
1PX
Tape Dimensions
D1
D
pin1
P
pin1
8
1
2
e
E1
3
R
1PX
4
E
6
5
b
L
Top View
Bottom View
A A1
A
A2
End View
Side View
DIMENSIONS
SYMBOL
MIN.
A
0.70
A1
0
A2
0.203 REF
b
0.225
D
1.9
D1
0.65
E
1.9
E1
1.45
e
0.50 BSC
P
0.20
L
0.35
NOM.
0.75
0.02
0.203 REF
0.25
2.0
0.80
2.0
1.6
0.50 BSC
0.25
0.40
DIMENSIONS ARE IN MILLIMETERS
15
7
MAX.
0.80
0.05
0.203 REF
0.275
2.1
0.95
2.1
1.75
0.50 BSC
0.30
0.45
www.agilent.com/semiconductors
For product information and a complete list of
distributors, please go to our web site.
For technical assistance call:
Americas/Canada: +1 (800) 235-0312 or
(916) 788-6763
Europe: +49 (0) 6441 92460
China: 10800 650 0017
Hong Kong: (+65) 6271 2451
India, Australia, New Zealand: (+65) 6271 2394
Japan: (+81 3) 3335-8152(Domestic/International), or
0120-61-1280(Domestic Only)
Korea: (+65) 6271 2194
Malaysia, Singapore: (+65) 6271 2054
Taiwan: (+65) 6271 2654
Data subject to change.
Copyright © 2003 Agilent Technologies, Inc.
Obsoletes 5988-8246EN (12/02)
August 5, 2003
5989-0003EN